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1. 发明授权

US5849103A Method of monitoring fluid contamination 失效
标题翻译：监测流体污染的方法
公开(公告)号：US5849103A
公开(公告)日：1998-12-15
申请号：US995775
申请日：1997-12-22
申请人： Ryan Paul Bennett , Harry Frank Zaro, Jr. , Naoto Iizuka
发明人： Ryan Paul Bennett , Harry Frank Zaro, Jr. , Naoto Iizuka
IPC分类号： B08B3/00 , G01N33/00 , G01N33/18 , H01L21/00 , B08B9/093
CPC分类号： H01L21/67253 , B08B3/00 , G01N33/18 , H01L21/67057 , G01N2033/0095 , Y10S134/902 , Y10S438/906
摘要： A method of monitoring contamination of fluid used to rinse crystal wafers, and a contamination monitoring system having a portable framework which carries a rinsing bath for detachable connection to a remote fluid source. A transport structure is mounted on the framework to accommodate transport of the system to and from the remote fluid source. The framework includes a chamber which encloses the rinsing bath to isolate it from the surrounding environment, typically using a filter which removes unwanted particles from air within the chamber. The filter also typically creates a vertical airflow within the chamber. In one embodiment, the system employs a rinsing bath with inner and outer tanks, the inner tank being configured to hold wafers to be rinsed and the outer tank being configured to hold the inner tank. An input port introduces fluid from the remote fluid source into the inner tank for overflow into the outer tank. The outer tank employs an output port for discharge of fluid received from the inner tank. The system identifies contaminated fluid using a test wafer which is cleansed within the rinsing bath and compared to a wafer having optimal characteristics. The source of contamination may be identified by connecting the rinsing bath to various outputs along the fluid path from the remote fluid source, which effectively allows the user to identify an affected fluid path segment.
摘要翻译：监测用于漂洗晶片的流体污染的方法，以及具有便携式框架的污染物监测系统，该便携式框架携带用于可分离连接到远程流体源的漂洗槽。运输结构安装在框架上以适应系统运送到远程流体源和从远程流体源运送。该框架包括一个室，其包围漂洗浴以将其与周围环境隔离，通常使用从腔室中的空气中去除不需要的颗粒的过滤器。过滤器还通常在室内产生垂直气流。在一个实施例中，系统采用具有内部和外部罐的冲洗槽，内部容器被配置成保持要冲洗的晶片，并且外部容器构造成保持内部容器。输入端口将流体从远程流体源引入内部容器以溢出到外部容器中。外箱采用输出端口，用于排放从内罐接收的流体。该系统使用在漂洗槽内清洗的测试晶片识别污染的流体，并与具有最佳特性的晶片进行比较。可以通过将冲洗浴沿着远离流体源的流体路径连接到各种输出来识别污染源，这有效地允许用户识别受影响的流体路径段。

2. 发明授权

US6058947A Contamination monitoring system 失效
标题翻译：污染监测系统
公开(公告)号：US6058947A
公开(公告)日：2000-05-09
申请号：US169090
申请日：1998-10-08
申请人： Ryan Paul Bennett , Harry Frank Zaro, Jr. , Naoto Iizuka
发明人： Ryan Paul Bennett , Harry Frank Zaro, Jr. , Naoto Iizuka
IPC分类号： B08B3/00 , G01N33/00 , G01N33/18 , H01L21/00 , B08B3/06 , B08B13/00
CPC分类号： H01L21/67253 , B08B3/00 , G01N33/18 , H01L21/67057 , G01N2033/0095 , Y10S134/902 , Y10S438/906
摘要： A contamination monitoring system having a portable framework which carries a rinsing bath for detachable connection to a remote fluid source. A transport structure is mounted on the framework to accommodate transport of the system to and from the remote fluid source. The framework includes a chamber which encloses the rinsing bath to isolate it from the surrounding environment, typically using a filter which removes unwanted particles from air within the chamber. The filter also typically creates a vertical airflow within the chamber. In one embodiment, the system employs a rinsing bath with inner and outer tanks, the inner tank being configured to hold wafers to be rinsed and the outer tank being configured to hold the inner tank. An input port introduces fluid from the remote fluid source into the inner tank for overflow into the outer tank. The outer tank employs an output port for discharge of fluid received from the inner tank. The system identifies contaminated fluid using a test wafer which is cleansed within the rinsing bath and compared to a wafer having optimal characteristics. The source of contamination may be identified by connecting the rinsing bath to various outputs along the fluid path from the remote fluid source, which effectively allows the user to identify an affected fluid path segment.
摘要翻译：一种具有便携式框架的污染监测系统，其携带用于可分离连接到远程流体源的冲洗浴。运输结构安装在框架上以适应系统运送到远程流体源和从远程流体源运送。该框架包括一个室，其包围漂洗浴以将其与周围环境隔离，通常使用从腔室中的空气中去除不需要的颗粒的过滤器。过滤器还通常在室内产生垂直气流。在一个实施例中，系统采用具有内部和外部罐的冲洗槽，内部容器被配置成保持要冲洗的晶片，并且外部容器构造成保持内部容器。输入端口将流体从远程流体源引入内部容器以溢出到外部容器中。外箱采用输出端口，用于排放从内罐接收的流体。该系统使用在漂洗槽内清洗的测试晶片识别污染的流体，并与具有最佳特性的晶片进行比较。可以通过将冲洗浴沿着远离流体源的流体路径连接到各种输出来识别污染源，这有效地允许用户识别受影响的流体路径段。

3. 发明授权

US08569148B2 Final polishing method for silicon single crystal wafer and silicon single crystal wafer 有权
标题翻译：硅单晶晶片和硅单晶晶片的最终抛光方法
公开(公告)号：US08569148B2
公开(公告)日：2013-10-29
申请号：US12449017
申请日：2008-01-29
申请人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
发明人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
IPC分类号： H01L21/306
CPC分类号： B24B37/042 , H01L21/02024
摘要： The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.
摘要翻译：本发明提供了一种用于在最终研磨步骤中将研磨速度设定为10nm /分以下的最终抛光的硅单晶晶片的最终抛光方法，作为用于研磨硅的多个研磨步骤中的最终步骤将具有抛光浆料的单晶晶片置于硅单晶晶片和抛光垫之间，以及通过该方法进行最终抛光的硅单晶晶片。因此，可以提供可以获得具有较少PID（抛光诱导缺陷）的硅单晶晶片和通过该方法进行最终抛光的硅单晶晶片的最终抛光方法。

4. 发明申请

US20100090314A1 FINAL POLISHING METHOD FOR SILICON SINGLE CRYSTAL WAFER AND SILICON SINGLE CRYSTAL WAFER 有权
标题翻译：硅单晶和硅晶单晶最终抛光方法
公开(公告)号：US20100090314A1
公开(公告)日：2010-04-15
申请号：US12449017
申请日：2008-01-29
申请人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
发明人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
IPC分类号： H01L29/34 , H01L21/306
CPC分类号： B24B37/042 , H01L21/02024
摘要： The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.
摘要翻译：本发明提供了一种用于在最终研磨步骤中将研磨速度设定为10nm /分以下的最终抛光的硅单晶晶片的最终抛光方法，作为用于研磨硅的多个研磨步骤中的最终步骤将具有抛光浆料的单晶晶片置于硅单晶晶片和抛光垫之间，以及通过该方法进行最终抛光的硅单晶晶片。因此，可以提供可以获得具有较少PID（抛光诱导缺陷）的硅单晶晶片和通过该方法进行最终抛光的硅单晶晶片的最终抛光方法。

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