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1. 发明授权

US06360604B1 Acceleration sensor 有权
标题翻译：加速度传感器
公开(公告)号：US06360604B1
公开(公告)日：2002-03-26
申请号：US09423532
申请日：1999-10-09
申请人： Franz Laermer , Bernhard Elsner , Wilhelm Frey
发明人： Franz Laermer , Bernhard Elsner , Wilhelm Frey
IPC分类号： G01P1500
CPC分类号： G01P15/125 , G01P2015/0814
摘要： An acceleration sensor has an oscillating structure which is movably suspended on a substrate and can be deflected by an acting acceleration. The acceleration sensor also has an analyzing arrangement detecting a deflection of the oscillating structure due to the acceleration. The oscillating structure and/or the analyzing arrangement are connected to the substrate by mechanical decoupling devices.
摘要翻译：加速度传感器具有可移动地悬挂在基板上并且可以通过作用加速度而偏转的振荡结构。加速度传感器还具有检测由于加速度引起的振动结构的偏转的分析装置。振荡结构和/或分析装置通过机械解耦装置连接到基板。

2. 发明授权

US05996409A Acceleration sensing device 失效
标题翻译：加速度传感装置
公开(公告)号：US05996409A
公开(公告)日：1999-12-07
申请号：US64495
申请日：1998-04-22
申请人： Karsten Funk , Franz Laermer , Bernhard Elsner , Wilhelm Frey
发明人： Karsten Funk , Franz Laermer , Bernhard Elsner , Wilhelm Frey
IPC分类号： B60R21/00 , B60R21/01 , B60R21/013 , B60R21/0132 , G01C19/56 , G01C19/5712 , G01P15/125 , G01P15/18 , G01C19/00 , G01P15/08
CPC分类号： B60R21/0132 , B60R21/013 , G01C19/5712 , G01P15/097 , G01P15/125 , G01P15/18 , B60G2800/9124 , B60R2021/0018 , B60R2021/01006 , B60R2021/01306 , G01P2015/0814
摘要： An acceleration sensing device includes a rotational speed sensor which is mounted on a substrate and detects rotational speed, at least one oscillating structure with a deflectable seismic mass, and an acceleration sensor that detects linear acceleration and has at least one additional seismic mass which is suspended on flexible elements so that it can be deflected. The seismic masses of the two sensors are deflected independently of one another.
摘要翻译：加速度感测装置包括安装在基板上并检测转速的转速传感器，具有可偏转地震质量的至少一个振荡结构和检测线性加速度的至少一个额外的地震块悬挂的加速度传感器在柔性元件上，使其可以偏转。两个传感器的地震质量彼此独立地偏转。

3. 发明授权

US07166536B1 Methods for plasma etching of silicon 有权
标题翻译：硅等离子体蚀刻方法
公开(公告)号：US07166536B1
公开(公告)日：2007-01-23
申请号：US09720761
申请日：2000-03-16
申请人： Franz Laermer , Andrea Schilp , Bernhard Elsner
发明人： Franz Laermer , Andrea Schilp , Bernhard Elsner
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , Y02C20/30 , Y02P70/605
摘要： A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF3, BrF3, or IF5 is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF3 is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.
摘要翻译：使用工艺气体的硅衬底中的横向限定结构的等离子体蚀刻（特别是各向异性等离子体蚀刻）的方法至少包括至少一次在横向限定的结构的侧壁上析出的钝化材料在蚀刻之前和/或期间。在示例性方法中，将至少一种选自ClF 3 3，BrF 3或IF 5的化合物加入到该方法气体作为输送氧气的蚀刻气体。在另一示例性方法中，至少不时地将NF 3 N作为消耗钝化材料的添加剂加入到工艺气体中。最后，在另一示例性方法中，至少不时地向工艺气体添加轻质且易于电离的气体，特别是H 2，He或Ne。可以组合三种示例性方法。

4. 发明授权

US06724023B2 Field effect transistor, especially for use as a sensor element or acceleration sensor 失效
标题翻译：场效应晶体管，特别用作传感器元件或加速度传感器
公开(公告)号：US06724023B2
公开(公告)日：2004-04-20
申请号：US09838062
申请日：2001-04-19
申请人： Klaus Heyers , Bernhard Elsner
发明人： Klaus Heyers , Bernhard Elsner
IPC分类号： H01L2984
CPC分类号： H01L29/84 , G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.
摘要翻译：描述适合用作传感器元件或加速度传感器的场效应晶体管。为此，平面衬底内的场效应晶体管具有通过沟道区彼此分离的漏极区和源极区。此外，提供栅极电极，其布置成在沟道区域上基板上基本上自支撑。栅电极被柔性地支撑，使得作用在其上的具有与衬底的表面平行的部件的外力导致栅极平行于衬底的表面的偏转。还描述了一种方法，其中在第一方法步骤中，在CMOS工艺中制造或制造具有漏极区域，源极区域和沟道区域的集成电路，此后，在第二方法步骤中，使用电镀添加剂技术在集成电路上产生基本上自支撑的栅电极。

5. 发明授权

US5646347A Suspension for micromechanical structure and micromechanical acceleration sensor 失效
标题翻译：用于微机械结构和微机械加速度传感器的悬架
公开(公告)号：US5646347A
公开(公告)日：1997-07-08
申请号：US521942
申请日：1995-08-31
申请人： Kurt Weiblen , Michael Offenberg , Bernhard Elsner
发明人： Kurt Weiblen , Michael Offenberg , Bernhard Elsner
IPC分类号： B81B3/00 , B81C1/00 , G01P1/00 , G01P15/125 , H01L49/00
CPC分类号： G01P1/006 , G01P15/125 , G01P2015/0814
摘要： A suspension or an acceleration sensor having a suspension is proposed, by means of which a micromechanical structure or the acceleration sensor is anchored on a substrate. The suspension takes place by means of lever elements on which an equalizing beam acts. The lever elements are deformed by the stresses in the equalizing beam with respect to the substrate in such a way that the stresses in the microstructure with respect to the substrate are either compensated for or, alternatively, are converted from compressive stresses to tensile stresses or from tensile stresses to compressive stresses.
摘要翻译：提出了具有悬架的悬架或加速度传感器，通过该悬架或加速度传感器将微机械结构或加速度传感器锚定在基板上。悬挂通过杠杆元件进行，平衡梁作用在杠杆元件上。杠杆元件通过相等于基板的均衡梁中的应力变形，使得相对于基板的微结构中的应力被补偿或者替代地从压缩应力转变为拉伸应力或从对应力的拉伸应力。

6. 发明授权

US06290858B1 Manufacturing method for a micromechanical device 有权
标题翻译：微机械装置的制造方法
公开(公告)号：US06290858B1
公开(公告)日：2001-09-18
申请号：US09416721
申请日：1999-10-13
申请人： Josef Hirtreiter , Bernhard Elsner
发明人： Josef Hirtreiter , Bernhard Elsner
IPC分类号： B44C122
CPC分类号： B81C1/00126 , B81B2201/047 , B81B2203/0307
摘要： A manufacturing method for a micromechanical device. In this method, a substrate is prepared with a plating base area to accommodate an anchoring region, and an adhesive layer is formed and structured on the substrate, so that the anchoring region is formed in the plating base area in the form of a quasi-insular region in a recess of the adhesive layer. The quasi-insular region is connected to the adhesive layer outside of the plated based area by at least one thin web. A mask is formed on the adhesive layer and structured so that the anchoring region and an overgrowth region adjacent to the anchoring region remain unmasked. An electroplated layer is deposited on the unmasked anchoring region so that the overgrowth region is overgrown, and the mask and the part of the adhesive layer that has not been overgrown are removed.
摘要翻译：一种微机械装置的制造方法。在该方法中，制备具有电镀基底面积以容纳锚定区域的基板，并且在基板上形成并构造粘合剂层，使得锚定区域以准准地形成在电镀基区域中，在粘合剂层的凹部中的岛状区域。准岛状区域通过至少一个薄网连接到电镀基区域外的粘合剂层。在粘合剂层上形成掩模，并且构造成使锚定区域和与锚固区域相邻的过度生长区域保持未被遮蔽。在未掩蔽的锚定区域上沉积电镀层，使得过度生长区域过度生长，并且除去掩模和尚未长满的粘合剂层的部分。

7. 发明授权

US6030515A Method for fabricating metal micropatterns 失效
标题翻译：制作金属微图案的方法
公开(公告)号：US6030515A
公开(公告)日：2000-02-29
申请号：US121081
申请日：1998-07-23
申请人： Klaus Heyers , Bernhard Elsner
发明人： Klaus Heyers , Bernhard Elsner
IPC分类号： H01L21/302 , B81B3/00 , C23F4/00 , C25D1/00 , C25D1/08 , C25D1/10 , H01L21/283 , H01L21/3065 , H01L21/768 , C25D5/02
CPC分类号： B81C1/0019 , B81B3/0086 , C25D1/08 , H01L21/76879 , B81B2203/033 , B81C2201/0109
摘要： A method for fabricating metal micropatterns. Trenches are introduced into a polymer layer. These trenches are filled with the metal micropatterns using an electroplating process. Before the deposition of the metal micropatterns, the side walls of the trenches are covered with insulating layers which adhere to the metal micropatterns after the polymer layer is removed.
摘要翻译：金属微图案的制造方法。将沟槽引入聚合物层。这些沟槽使用电镀工艺填充金属微图案。在沉积金属微图案之前，沟槽的侧壁被绝缘层覆盖，绝缘层在聚合物层被去除之后粘附到金属微图案上。

8. 发明授权

US06724290B1 Microcoil 失效
标题翻译：微线圈
公开(公告)号：US06724290B1
公开(公告)日：2004-04-20
申请号：US09668258
申请日：2000-09-22
申请人： Markus Ohnmacht , Bernhard Elsner
发明人： Markus Ohnmacht , Bernhard Elsner
IPC分类号： H01F500
CPC分类号： H01L28/10 , H01F17/0006 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/00
摘要： A coil constructed using the additive technique on the surface of a substrate is characterized in that the conductors of the coil are in contact with an insulating material made at least in part of diamond or diamond-like carbon.
摘要翻译：使用添加技术在衬底表面上构造的线圈的特征在于，线圈的导体与至少部分由金刚石或类金刚石碳制成的绝缘材料接触。

9. 发明授权

US5937275A Method of producing acceleration sensors 失效
标题翻译：生产加速度传感器的方法
公开(公告)号：US5937275A
公开(公告)日：1999-08-10
申请号：US809945
申请日：1997-10-27
申请人： Horst Munzel , Michael Offenberg , Klaus Heyers , Bernhard Elsner , Markus Lutz , Helmut Skapa , Heinz-Georg Vossenberg , Nicholas Buchan , Eckhard Graf
发明人： Horst Munzel , Michael Offenberg , Klaus Heyers , Bernhard Elsner , Markus Lutz , Helmut Skapa , Heinz-Georg Vossenberg , Nicholas Buchan , Eckhard Graf
IPC分类号： G01P15/08 , H01L29/84 , G01L23/10 , G01P15/09
CPC分类号： G01P15/0802
摘要： A method for producing acceleration sensors is proposed, in which a silicon layer that is deposited in an epitaxial application system is used. Above sacrificial layers (2) applied to the substrate (1), the material grows in the form of a polysilicon layer (6), which has a certain surface roughness. By application of a photoresist and by a wet etching process, this surface roughness is eliminated. Alternatively, chemical-mechanical smoothing is contemplated.
摘要翻译： PCT No.PCT / DE96 / 01236 Sec。 371日期1997年10月27日第 102（e）1997年10月27日PCT PCT 1996年7月9日PCT公布。第WO97 / 04319号公报日期1997年2月6日提出了一种用于制造加速度传感器的方法，其中使用沉积在外延应用系统中的硅层。在施加到基板（1）的牺牲层（2）上方，材料以具有一定表面粗糙度的多晶硅层（6）的形式生长。通过施加光致抗蚀剂和通过湿蚀刻工艺，可以消除该表面粗糙度。或者，考虑化学机械平滑化。

10. 发明授权

US5631422A Sensor comprising multilayer substrate 失效
标题翻译：传感器包括多层基板
公开(公告)号：US5631422A
公开(公告)日：1997-05-20
申请号：US550484
申请日：1995-10-30
申请人： Peter Sulzberger , Michael Offenberg , Bernhard Elsner , Markus Lutz
发明人： Peter Sulzberger , Michael Offenberg , Bernhard Elsner , Markus Lutz
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , H01G7/00
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A sensor includes a first silicon layer, and a sensor element including at least one electrode structured from the first silicon layer. The sensor also includes at least one connecting element also structured from the first silicon layer. The connecting element has a doping less than the doping of the electrode. The sensor comprises at least one conductor track on the first silicon layer routed over the connecting element and coupled to the sensor element for supplying an external signal.
摘要翻译：传感器包括第一硅层和包括由第一硅层构成的至少一个电极的传感器元件。该传感器还包括至少一个也由第一硅层构成的连接元件。连接元件的掺杂小于电极的掺杂。传感器包括在连接元件上布线的第一硅层上的至少一个导体轨道，并且耦合到传感器元件以提供外部信号。

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