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1. 发明申请

US20060118862A1 Lateral trench transistor, as well as a method for its production 有权
公开(公告)号：US20060118862A1
公开(公告)日：2006-06-08
申请号：US11262483
申请日：2005-10-28
申请人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rub , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schaffer
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rub , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schaffer
IPC分类号： H01L29/94
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

2. 发明授权

US08431988B2 Lateral trench transistor, as well as a method for its production 有权
标题翻译：横向沟槽晶体管，以及其生产方法
公开(公告)号：US08431988B2
公开(公告)日：2013-04-30
申请号：US11262483
申请日：2005-10-28
申请人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
IPC分类号： H01L29/66
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.
摘要翻译：横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

3. 发明授权

US07777278B2 Lateral semiconductor component with a drift zone having at least one field electrode 有权
标题翻译：具有漂移区的侧向半导体元件具有至少一个场电极
公开(公告)号：US07777278B2
公开(公告)日：2010-08-17
申请号：US12020197
申请日：2008-01-25
申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger , Uwe Wahl
发明人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger , Uwe Wahl
IPC分类号： H01L21/336
CPC分类号： H01L29/407 , H01L29/0847 , H01L29/0852 , H01L29/404 , H01L29/4175 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7393 , H01L29/7816 , H01L29/7825 , H01L29/8611 , H01L29/872
摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
摘要翻译：描述半导体部件。在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

4. 发明申请

US20060006386A1 Lateral semiconductor component with a drift zone having at least one field electrode 审中-公开
标题翻译：具有漂移区的侧向半导体元件具有至少一个场电极
公开(公告)号：US20060006386A1
公开(公告)日：2006-01-12
申请号：US10926581
申请日：2004-08-25
申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
发明人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
IPC分类号： H01L29/04
CPC分类号： H01L29/407 , H01L29/0847 , H01L29/0852 , H01L29/404 , H01L29/4175 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7393 , H01L29/7816 , H01L29/7825 , H01L29/8611 , H01L29/872
摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
摘要翻译：描述半导体部件。在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

5. 发明申请

US20080179672A1 LATERAL SEMICONDUCTOR COMPONENT WITH A DRIFT ZONE HAVING AT LEAST ONE FIELD ELECTRODE 有权
标题翻译：具有至少一个电场的DRIFT区域的横向半导体元件
公开(公告)号：US20080179672A1
公开(公告)日：2008-07-31
申请号：US12020197
申请日：2008-01-25
申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger
发明人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger
IPC分类号： H01L29/78 , H01L29/861
CPC分类号： H01L29/407 , H01L29/0847 , H01L29/0852 , H01L29/404 , H01L29/4175 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7393 , H01L29/7816 , H01L29/7825 , H01L29/8611 , H01L29/872
摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
摘要翻译：描述半导体部件。在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

6. 发明授权

US07821064B2 Lateral MISFET and method for fabricating it 有权
标题翻译：侧面MISFET及其制造方法
公开(公告)号：US07821064B2
公开(公告)日：2010-10-26
申请号：US11276782
申请日：2006-03-14
申请人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
发明人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/00
CPC分类号： H01L29/782 , H01L29/0619 , H01L29/0696 , H01L29/7825
摘要： A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
摘要翻译：具有半导体本体的横向MISFET具有第一导电类型的掺杂半导体衬底和与第一导电类型互补的第二导电类型的外延层，外延层设置在半导体衬底上。该MISFET在半导体本体的顶侧具有漏极，源极和具有栅极绝缘体的栅电极。第一导电类型的半导体区域以与栅极绝缘体相邻的方式嵌入在外延层中，第二导电类型的漂移区被布置在外延层中的半导体区域和漏极之间。漂移区具有排列成行和列的柱状区域，其边界层具有金属层，其在每种情况下与漂移区的材料形成肖特基接触。

7. 发明申请

US20060261384A1 Lateral MISFET and method for fabricating it 有权
标题翻译：侧面MISFET及其制造方法
公开(公告)号：US20060261384A1
公开(公告)日：2006-11-23
申请号：US11276782
申请日：2006-03-14
申请人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
发明人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/76
CPC分类号： H01L29/782 , H01L29/0619 , H01L29/0696 , H01L29/7825
摘要： A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
摘要翻译：具有半导体本体的横向MISFET具有第一导电类型的掺杂半导体衬底和与第一导电类型互补的第二导电类型的外延层，外延层设置在半导体衬底上。该MISFET在半导体本体的顶侧具有漏极，源极和具有栅极绝缘体的栅电极。第一导电类型的半导体区域以与栅极绝缘体相邻的方式嵌入在外延层中，第二导电类型的漂移区被布置在外延层中的半导体区域和漏极之间。漂移区具有排列成行和列的柱状区域，其边界层具有金属层，其在每种情况下与漂移区的材料形成肖特基接触。

8. 发明授权

US07977737B2 Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance 有权
标题翻译：具有对固有栅极漏极或固有漏极 - 源极电容的附加电容的半导体器件
公开(公告)号：US07977737B2
公开(公告)日：2011-07-12
申请号：US12043429
申请日：2008-03-06
申请人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Anton Mauder , Holger Kapels , Gerald Deboy , Franz Hirler
发明人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Anton Mauder , Holger Kapels , Gerald Deboy , Franz Hirler
IPC分类号： H01L29/66 , H01L21/337
CPC分类号： H01L27/0733 , H01L2224/48091 , H01L2224/4813 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.
摘要翻译：具有固有电容的半导体器件及其制造方法。半导体器件在控制电极和第一电极之间具有固有的反馈电容。此外，半导体器件在第一电极和第二电极之间具有固有的漏极 - 源极电容。至少一个单片集成附加电容与固有反馈电容并联连接，或与固有漏 - 源电容并联连接。附加电容包括与第一电容器表面相对的第一电容器表面和第二电容器表面。电容器表面是半导体器件的前侧上的半导体器件的结构化导电层，介电层位于其之间，并形成至少一个附加电容器。

9. 发明授权

US07973359B2 Semiconductor device with a charge carrier compensation structure and process 有权
标题翻译：具有载流子补偿结构和工艺的半导体器件
公开(公告)号：US07973359B2
公开(公告)日：2011-07-05
申请号：US12194384
申请日：2008-08-19
申请人： Franz Hirler , Armin Willmeroth , Anton Mauder , Gerald Deboy , Holger Kapels , Carolin Tolksdorf , Frank Pfirsch
发明人： Franz Hirler , Armin Willmeroth , Anton Mauder , Gerald Deboy , Holger Kapels , Carolin Tolksdorf , Frank Pfirsch
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L24/05 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/42372 , H01L29/7811 , H01L2224/02166 , H01L2924/181 , H01L2924/00
摘要： A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.
摘要翻译：具有电荷载体补偿结构的半导体器件。在一个实施例中，半导体器件具有具有栅极和源极结构的中心电池区。至少一个键合接触区域电耦合到栅极结构或源极结构。电容增大场板电耦合到近表面接合区域中的至少一个。

10. 发明申请

US20100044788A1 SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND PROCESS 有权
标题翻译：具有充电载波补偿结构和过程的半导体器件
公开(公告)号：US20100044788A1
公开(公告)日：2010-02-25
申请号：US12194384
申请日：2008-08-19
申请人： Franz Hirler , Armin Willmeroth , Anton Mauder , Gerald Deboy , Holger Kapels , Carolin Tolksdorf , Frank Pfirsch
发明人： Franz Hirler , Armin Willmeroth , Anton Mauder , Gerald Deboy , Holger Kapels , Carolin Tolksdorf , Frank Pfirsch
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L24/05 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/42372 , H01L29/7811 , H01L2224/02166 , H01L2924/181 , H01L2924/00
摘要： A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.
摘要翻译：具有电荷载体补偿结构的半导体器件。在一个实施例中，半导体器件具有具有栅极和源极结构的中心电池区。至少一个键合接触区域电耦合到栅极结构或源极结构。电容增大场板电耦合到近表面接合区域中的至少一个。

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