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1. 发明授权

US07777278B2 Lateral semiconductor component with a drift zone having at least one field electrode 有权
标题翻译：具有漂移区的侧向半导体元件具有至少一个场电极
公开(公告)号：US07777278B2
公开(公告)日：2010-08-17
申请号：US12020197
申请日：2008-01-25
申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger , Uwe Wahl
发明人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger , Uwe Wahl
IPC分类号： H01L21/336
CPC分类号： H01L29/407 , H01L29/0847 , H01L29/0852 , H01L29/404 , H01L29/4175 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7393 , H01L29/7816 , H01L29/7825 , H01L29/8611 , H01L29/872
摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
摘要翻译：描述半导体部件。在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

2. 发明申请

US20060006386A1 Lateral semiconductor component with a drift zone having at least one field electrode 审中-公开
标题翻译：具有漂移区的侧向半导体元件具有至少一个场电极
公开(公告)号：US20060006386A1
公开(公告)日：2006-01-12
申请号：US10926581
申请日：2004-08-25
申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
发明人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
IPC分类号： H01L29/04
CPC分类号： H01L29/407 , H01L29/0847 , H01L29/0852 , H01L29/404 , H01L29/4175 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7393 , H01L29/7816 , H01L29/7825 , H01L29/8611 , H01L29/872
摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
摘要翻译：描述半导体部件。在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

3. 发明申请

US20080179672A1 LATERAL SEMICONDUCTOR COMPONENT WITH A DRIFT ZONE HAVING AT LEAST ONE FIELD ELECTRODE 有权
标题翻译：具有至少一个电场的DRIFT区域的横向半导体元件
公开(公告)号：US20080179672A1
公开(公告)日：2008-07-31
申请号：US12020197
申请日：2008-01-25
申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger
发明人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Gerald Deboy , Ralf Henninger
IPC分类号： H01L29/78 , H01L29/861
CPC分类号： H01L29/407 , H01L29/0847 , H01L29/0852 , H01L29/404 , H01L29/4175 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7393 , H01L29/7816 , H01L29/7825 , H01L29/8611 , H01L29/872
摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
摘要翻译：描述半导体部件。在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

4. 发明申请

US20060118862A1 Lateral trench transistor, as well as a method for its production 有权
公开(公告)号：US20060118862A1
公开(公告)日：2006-06-08
申请号：US11262483
申请日：2005-10-28
申请人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rub , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schaffer
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rub , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schaffer
IPC分类号： H01L29/94
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

5. 发明授权

US08431988B2 Lateral trench transistor, as well as a method for its production 有权
标题翻译：横向沟槽晶体管，以及其生产方法
公开(公告)号：US08431988B2
公开(公告)日：2013-04-30
申请号：US11262483
申请日：2005-10-28
申请人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
IPC分类号： H01L29/66
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.
摘要翻译：横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

6. 发明授权

US07821064B2 Lateral MISFET and method for fabricating it 有权
标题翻译：侧面MISFET及其制造方法
公开(公告)号：US07821064B2
公开(公告)日：2010-10-26
申请号：US11276782
申请日：2006-03-14
申请人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
发明人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/00
CPC分类号： H01L29/782 , H01L29/0619 , H01L29/0696 , H01L29/7825
摘要： A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
摘要翻译：具有半导体本体的横向MISFET具有第一导电类型的掺杂半导体衬底和与第一导电类型互补的第二导电类型的外延层，外延层设置在半导体衬底上。该MISFET在半导体本体的顶侧具有漏极，源极和具有栅极绝缘体的栅电极。第一导电类型的半导体区域以与栅极绝缘体相邻的方式嵌入在外延层中，第二导电类型的漂移区被布置在外延层中的半导体区域和漏极之间。漂移区具有排列成行和列的柱状区域，其边界层具有金属层，其在每种情况下与漂移区的材料形成肖特基接触。

7. 发明申请

US20060261384A1 Lateral MISFET and method for fabricating it 有权
标题翻译：侧面MISFET及其制造方法
公开(公告)号：US20060261384A1
公开(公告)日：2006-11-23
申请号：US11276782
申请日：2006-03-14
申请人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
发明人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/76
CPC分类号： H01L29/782 , H01L29/0619 , H01L29/0696 , H01L29/7825
摘要： A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
摘要翻译：具有半导体本体的横向MISFET具有第一导电类型的掺杂半导体衬底和与第一导电类型互补的第二导电类型的外延层，外延层设置在半导体衬底上。该MISFET在半导体本体的顶侧具有漏极，源极和具有栅极绝缘体的栅电极。第一导电类型的半导体区域以与栅极绝缘体相邻的方式嵌入在外延层中，第二导电类型的漂移区被布置在外延层中的半导体区域和漏极之间。漂移区具有排列成行和列的柱状区域，其边界层具有金属层，其在每种情况下与漂移区的材料形成肖特基接触。

8. 发明授权

US07973362B2 Semiconductor component and method for producing it 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07973362B2
公开(公告)日：2011-07-05
申请号：US11866662
申请日：2007-10-03
申请人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
发明人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
IPC分类号： H01L29/66 , H01L27/088
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402
摘要： A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.
摘要翻译：半导体部件包括具有边缘的第一导电类型的边缘区域的半导体本体。第二导电类型的电荷补偿区域被嵌入到边缘区域中，电荷补偿区域从半导体组件的顶侧垂直延伸到半导体本体中。对于在垂直于边缘的方向上相邻的两个电荷补偿区域之间存在的体积Vs中的电荷载流子数Ns以及存在于相邻的两个电荷补偿区域之间的体积Vp中的载流子数Np 与边缘平行的方向，Np> Ns成立。

9. 发明申请

US20080237701A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT 有权
标题翻译：半导体元件及其生产方法
公开(公告)号：US20080237701A1
公开(公告)日：2008-10-02
申请号：US11866662
申请日：2007-10-03
申请人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
发明人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
IPC分类号： H01L29/76 , H01L21/425
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402
摘要： A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.
摘要翻译：半导体部件包括具有边缘的第一导电类型的边缘区域的半导体本体。第二导电类型的电荷补偿区域被嵌入到边缘区域中，电荷补偿区域从半导体组件的顶侧垂直延伸到半导体本体中。对于在垂直于边缘的方向上相邻的两个电荷补偿区域之间存在的体积V S s中存在的电荷载体的数量N SUB，以及数字N < 在与边缘平行的方向上相邻的两个电荷补偿区域之间存在于体积V p p中的电荷载体的SUB> p N N _成立。

10. 发明授权

US07126186B2 Compensation component and process for producing the component 有权
公开(公告)号：US07126186B2
公开(公告)日：2006-10-24
申请号：US10324823
申请日：2002-12-20
申请人： Hans Weber , Armin Willmeroth , Uwe Wahl , Markus Schmitt
发明人： Hans Weber , Armin Willmeroth , Uwe Wahl , Markus Schmitt
IPC分类号： H10L21/336 , H01L31/062
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/41766 , H01L2924/0002 , H01L2924/00
摘要： A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity type disposed in the drift zone. Higher doped zones of the first type are inlaid in a weaker doped environment of the second type closer to the first electrode and higher doped zones of the second type are inlaid in a weaker doped environment of the first type closer to the second electrode. The drift zone is complementary so that, in a direction between the electrodes, a more highly doped zone of the first type adjoins a more weakly doped environment of the first type, and a more weakly doped environment of the second type adjoins a more highly doped zone of the second type.

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