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1. 发明授权

US07821064B2 Lateral MISFET and method for fabricating it 有权
标题翻译：侧面MISFET及其制造方法
公开(公告)号：US07821064B2
公开(公告)日：2010-10-26
申请号：US11276782
申请日：2006-03-14
申请人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
发明人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/00
CPC分类号： H01L29/782 , H01L29/0619 , H01L29/0696 , H01L29/7825
摘要： A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
摘要翻译：具有半导体本体的横向MISFET具有第一导电类型的掺杂半导体衬底和与第一导电类型互补的第二导电类型的外延层，外延层设置在半导体衬底上。该MISFET在半导体本体的顶侧具有漏极，源极和具有栅极绝缘体的栅电极。第一导电类型的半导体区域以与栅极绝缘体相邻的方式嵌入在外延层中，第二导电类型的漂移区被布置在外延层中的半导体区域和漏极之间。漂移区具有排列成行和列的柱状区域，其边界层具有金属层，其在每种情况下与漂移区的材料形成肖特基接触。

2. 发明申请

US20060261384A1 Lateral MISFET and method for fabricating it 有权
标题翻译：侧面MISFET及其制造方法
公开(公告)号：US20060261384A1
公开(公告)日：2006-11-23
申请号：US11276782
申请日：2006-03-14
申请人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
发明人： Michael Rueb , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/76
CPC分类号： H01L29/782 , H01L29/0619 , H01L29/0696 , H01L29/7825
摘要： A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
摘要翻译：具有半导体本体的横向MISFET具有第一导电类型的掺杂半导体衬底和与第一导电类型互补的第二导电类型的外延层，外延层设置在半导体衬底上。该MISFET在半导体本体的顶侧具有漏极，源极和具有栅极绝缘体的栅电极。第一导电类型的半导体区域以与栅极绝缘体相邻的方式嵌入在外延层中，第二导电类型的漂移区被布置在外延层中的半导体区域和漏极之间。漂移区具有排列成行和列的柱状区域，其边界层具有金属层，其在每种情况下与漂移区的材料形成肖特基接触。

3. 发明授权

US07973362B2 Semiconductor component and method for producing it 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07973362B2
公开(公告)日：2011-07-05
申请号：US11866662
申请日：2007-10-03
申请人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
发明人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
IPC分类号： H01L29/66 , H01L27/088
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402
摘要： A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.
摘要翻译：半导体部件包括具有边缘的第一导电类型的边缘区域的半导体本体。第二导电类型的电荷补偿区域被嵌入到边缘区域中，电荷补偿区域从半导体组件的顶侧垂直延伸到半导体本体中。对于在垂直于边缘的方向上相邻的两个电荷补偿区域之间存在的体积Vs中的电荷载流子数Ns以及存在于相邻的两个电荷补偿区域之间的体积Vp中的载流子数Np 与边缘平行的方向，Np> Ns成立。

4. 发明申请

US20080237701A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT 有权
标题翻译：半导体元件及其生产方法
公开(公告)号：US20080237701A1
公开(公告)日：2008-10-02
申请号：US11866662
申请日：2007-10-03
申请人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
发明人： Armin Willmeroth , Michael Rueb , Carolin Tolksdorf , Markus Schmitt
IPC分类号： H01L29/76 , H01L21/425
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402
摘要： A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.
摘要翻译：半导体部件包括具有边缘的第一导电类型的边缘区域的半导体本体。第二导电类型的电荷补偿区域被嵌入到边缘区域中，电荷补偿区域从半导体组件的顶侧垂直延伸到半导体本体中。对于在垂直于边缘的方向上相邻的两个电荷补偿区域之间存在的体积V S s中存在的电荷载体的数量N SUB，以及数字N < 在与边缘平行的方向上相邻的两个电荷补偿区域之间存在于体积V p p中的电荷载体的SUB> p N N _成立。

5. 发明申请

US20110241104A1 INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION 有权
标题翻译：集成电路设备及其生产方法
公开(公告)号：US20110241104A1
公开(公告)日：2011-10-06
申请号：US13161130
申请日：2011-06-15
申请人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
发明人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0839 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7396
摘要： An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.
摘要翻译：集成电路器件包括在相对表面上装配有第一电极和第二电极的半导体本体。绝缘层上的控制电极控制两个电极之间电流的体区的通道区域。与沟道区相邻的漂移区包括漂移区和电荷补偿区。电荷补偿区域的一部分包括与第一电极电连接的导电连接的电荷补偿区。另一部分包括几乎浮动的电荷补偿区，使得增加的控制电极表面在半导体器件的单元区域中具有单片集成的附加电容CZGD。

6. 发明申请

US20090159927A1 INTEGRATED CIRCUIT DEVICE AND METHOD FOR ITS PRODUCTION 审中-公开
标题翻译：集成电路设备及其生产方法
公开(公告)号：US20090159927A1
公开(公告)日：2009-06-25
申请号：US11963057
申请日：2007-12-21
申请人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
发明人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
IPC分类号： H01L29/739 , H01L29/78 , H01L21/331 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0839 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7396
摘要： An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.
摘要翻译：集成电路器件包括在相对表面上装配有第一电极和第二电极的半导体本体。绝缘层上的控制电极控制两个电极之间电流的体区的通道区域。与沟道区相邻的漂移区包括漂移区和电荷补偿区。电荷补偿区域的一部分包括与第一电极电连接的导电连接的电荷补偿区。另一部分包括几乎浮动的电荷补偿区，使得增加的控制电极表面在半导体器件的单元区域中具有单片集成的附加电容CZGD。

7. 发明授权

US08294206B2 Integrated circuit device and method for its production 有权
标题翻译：集成电路装置及其制作方法
公开(公告)号：US08294206B2
公开(公告)日：2012-10-23
申请号：US13161130
申请日：2011-06-15
申请人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
发明人： Armin Willmeroth , Winfried Kaindl , Carolin Tolksdorf , Michael Rueb
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0839 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/7396
摘要： An integrated circuit device includes a semiconductor body fitted with a first electrode and a second electrode on opposite surfaces. A control electrode on an insulating layer controls channel regions of body zones for a current flow between the two electrodes. A drift section adjoining the channel regions comprises drift zones and charge compensation zones. A part of the charge compensation zones includes conductively connected charge compensation zones electrically connected to the first electrode. Another part includes nearly-floating charge compensation zones, so that an increased control electrode surface has a monolithically integrated additional capacitance CZGD in a cell region of the semiconductor device.
摘要翻译：集成电路器件包括在相对表面上装配有第一电极和第二电极的半导体本体。绝缘层上的控制电极控制两个电极之间电流的体区的通道区域。与沟道区相邻的漂移区包括漂移区和电荷补偿区。电荷补偿区域的一部分包括与第一电极电连接的导电连接的电荷补偿区。另一部分包括几乎浮动的电荷补偿区，使得增加的控制电极表面在半导体器件的单元区域中具有单片集成的附加电容CZGD。

8. 发明申请

US20080203470A1 Lateral compensation component 审中-公开
标题翻译：横向补偿成分
公开(公告)号：US20080203470A1
公开(公告)日：2008-08-28
申请号：US11712340
申请日：2007-02-28
申请人： Armin Willmeroth , Michael Rueb , Holger Kapels , Carolin Tolksdorf , Giulliano Rocco Aloise
发明人： Armin Willmeroth , Michael Rueb , Holger Kapels , Carolin Tolksdorf , Giulliano Rocco Aloise
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/0634 , H01L29/0642 , H01L29/0653 , H01L29/0692 , H01L29/1079 , H01L29/36 , H01L29/4236 , H01L29/66659
摘要： A transistor is provided which includes a lateral compensation component. The lateral compensation component includes a plurality of n (or n−) layer/p (or p−) layer pairs, wherein adjacent ones of said pairs are separated by one of an insulator region and/or an intrinsic silicon region.
摘要翻译：提供了包括横向补偿部件的晶体管。横向补偿分量包括多个n（或n）层/ p（或p-）层对，其中所述对中的相邻对由绝缘体区域和/或本征硅区域之一分隔开。

9. 发明授权

US08101997B2 Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production 有权
标题翻译：具有半导体主体中的载流子补偿结构的半导体器件及其制造方法
公开(公告)号：US08101997B2
公开(公告)日：2012-01-24
申请号：US12111749
申请日：2008-04-29
申请人： Armin Willmeroth , Michael Rueb
发明人： Armin Willmeroth , Michael Rueb
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/7395
摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.
摘要翻译：在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

10. 发明申请

US20100078775A1 SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：具有充电载体补偿结构的半导体器件和用于制造半导体器件的方法
公开(公告)号：US20100078775A1
公开(公告)日：2010-04-01
申请号：US12241985
申请日：2008-09-30
申请人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
发明人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
IPC分类号： H01L21/20 , H01L29/06
CPC分类号： H01L29/36 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0688 , H01L29/0878 , H01L29/105 , H01L29/1095 , H01L29/41766 , H01L29/66712 , H01L29/7395 , H01L29/7811
摘要： A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.
摘要翻译：半导体器件具有具有与第一类型互补的第二导电类型的漂移区和具有第二类型导电性的电荷载体补偿区的电池区。围绕细胞场的边缘区域具有比细胞场更高的阻挡强度，边缘区域具有未漂移至比漂移区更弱掺杂的近表面区域，并且在近表面区域下方至少有一个埋置垂直延伸的互补掺杂区定位。

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