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    • 1. 发明授权
    • Low-power USB flash card reader using bulk-pipe streaming with UAS command re-ordering and channel separation
    • 低功耗USB闪存卡阅读器,采用UAS命令重新排序和通道分离的大容量流式传输
    • US08200862B2
    • 2012-06-12
    • US12887477
    • 2010-09-21
    • Charles C. LeeFrank YuAbraham C. Ma
    • Charles C. LeeFrank YuAbraham C. Ma
    • G06F13/12G06F13/00G06F12/02
    • G06F13/28G11C13/0004G11C16/102G11C2216/30Y02D10/14
    • A flash-card reader improves transmission efficiency by using bulk streaming of multiple pipes. A bulk data-out pipe carries host write data to the card reader and can operate in parallel with a bulk data-in pipe that carries host read data that was read from a flash card attached to the card reader. Status packets do not block data packets since the he status packets are buffered through a separate status pipe, and commands are buffered through a command pipe. Flash data from multiple flash cards are interleaved as separate endpoints that share the bulk data-in pipe. A data in/out streaming state machine controls streaming bulk data through the bulk data-in and data-out pipes, while a status streaming state machine controls streaming status packets through the status pipe. Transaction overhead is reduced using bulk streaming where packets for several commands are combined into the same bulk streams.
    • 闪存卡读卡器通过使用多个管道的批量流传输来提高传输效率。 批量数据输出管道将主机写入数据传送到读卡器,并且可以与承载从附接到读卡器的闪存卡读取的主机读取数据的批量数据输入管并行操作。 状态数据包不会阻塞数据包,因为状态数据包通过单独的状态管道进行缓冲,命令通过命令管道缓冲。 来自多个闪存卡的闪存数据被交织为共享大容量数据管道的单独端点。 数据输入/输出流状态机通过批量数据输入和数据输出管道控制流批量数据,而状态流状态机通过状态管道控制流状态数据包。 使用批量流量减少事务开销,其中几个命令的数据包被组合成相同的批量流。
    • 3. 发明申请
    • Command Queuing Smart Storage Transfer Manager for Striping Data to Raw-NAND Flash Modules
    • 命令排队智能存储传输管理器,用于将数据传送到原始NAND闪存模块
    • US20110213921A1
    • 2011-09-01
    • US13104257
    • 2011-05-10
    • Frank YuCharles C. LeeAbraham C. Ma
    • Frank YuCharles C. LeeAbraham C. Ma
    • G06F12/02
    • G06F12/0246G06F3/061G06F3/0659G06F3/0688G06F12/0607G06F2212/7208G11C13/0004
    • A flash module has raw-NAND flash memory chips accessed over a physical-block address (PBA) bus by a NVM controller. The NVM controller is on the flash module or on a system board for a solid-state disk (SSD). The NVM controller converts logical block addresses (LBA) to physical block addresses (PBA). Data striping and interleaving among multiple channels of the flash modules is controlled at a high level by a smart storage transaction manager, while further interleaving and remapping within a channel may be performed by the NVM controllers. A SDRAM buffer is used by a smart storage switch to cache host data before writing to flash memory. A Q-R pointer table stores quotients and remainders of division of the host address. The remainder points to a location of the host data in the SDRAM. A command queue stores Q, R for host commands.
    • 闪存模块具有通过NVM控制器通过物理块地址(PBA)总线访问的原始NAND闪存芯片。 NVM控制器位于闪存模块或固态硬盘(SSD)的系统板上。 NVM控制器将逻辑块地址(LBA)转换为物理块地址(PBA)。 闪存模块的多个通道之间的数据条带化和交织由智能存储事务管理器控制在高电平,而在信道内的进一步的交织和重新映射可由NVM控制器执行。 智能存储交换机使用SDRAM缓冲区,在写入闪存之前缓存主机数据。 Q-R指针表存储主机地址的商和余数。 剩余部分指向SDRAM中主机数据的位置。 命令队列存储主机命令的Q,R。
    • 7. 发明申请
    • Hybrid 2-Level Mapping Tables for Hybrid Block- and Page-Mode Flash-Memory System
    • 用于混合块和页模式闪存系统的混合二级映射表
    • US20090193184A1
    • 2009-07-30
    • US12418550
    • 2009-04-03
    • Frank YuCharles C. LeeAbraham C. MaMyeongjin Shin
    • Frank YuCharles C. LeeAbraham C. MaMyeongjin Shin
    • G06F12/02G06F12/00
    • G06F12/0246G06F2212/7203G06F2212/7208G11C11/5628G11C11/5678G11C13/00G11C13/0004G11C2211/5641
    • A hybrid solid-state disk (SSD) has multi-level-cell (MLC) or single-level-cell (SLC) flash memory, or both. SLC flash may be emulated by MLC that uses fewer cell states. A NVM controller converts logical block addresses (LBA) to physical block addresses (PBA). Most data is block-mapped and stored in MLC flash, but some critical or high-frequency data is page-mapped to reduce block-relocation copying. A hybrid mapping table has a first-level and a second level. Only the first level is used for block-mapped data, but both levels are used for page-mapped data. The first level contains a block-page bit that indicates if the data is block-mapped or page-mapped. A PBA field in the first-level table maps block-mapped data, while a virtual field points to the second-level table where the PBA and page number is stored for page-mapped data. Page-mapped data is identified by a frequency counter or sector count. SRAM space is reduced.
    • 混合固态盘(SSD)具有多级单元(MLC)或单级单元(SLC)闪存,或两者兼有。 SLC闪存可能由使用较少单元状态的MLC仿真。 NVM控制器将逻辑块地址(LBA)转换为物理块地址(PBA)。 大多数数据被块映射并存储在MLC闪存中,但是一些关键或高频数据被页映射以减少块重定位复制。 混合映射表具有第一级和第二级。 只有第一级用于块映射数据,但是这两个级别都用于页映射数据。 第一级包含一个块页位,指示数据是块映射还是页映射。 第一级表中的PBA字段映射块映射数据,而虚拟字段指向存储页面映射数据的PBA和页码的二级表。 页面映射数据由频率计数器或扇区计数来标识。 SRAM空间减少。
    • 9. 发明授权
    • Command queuing smart storage transfer manager for striping data to raw-NAND flash modules
    • 命令排队智能存储传输管理器,用于将数据分配到原始NAND闪存模块
    • US08176238B2
    • 2012-05-08
    • US13104257
    • 2011-05-10
    • Frank YuCharles C. LeeAbraham C. Ma
    • Frank YuCharles C. LeeAbraham C. Ma
    • G06F12/00G06F13/00G06F13/28
    • G06F12/0246G06F3/061G06F3/0659G06F3/0688G06F12/0607G06F2212/7208G11C13/0004
    • A flash module has raw-NAND flash memory chips accessed over a physical-block address (PBA) bus by a NVM controller. The NVM controller is on the flash module or on a system board for a solid-state disk (SSD). The NVM controller converts logical block addresses (LBA) to physical block addresses (PBA). Data striping and interleaving among multiple channels of the flash modules is controlled at a high level by a smart storage transaction manager, while further interleaving and remapping within a channel may be performed by the NVM controllers. A SDRAM buffer is used by a smart storage switch to cache host data before writing to flash memory. A Q-R pointer table stores quotients and remainders of division of the host address. The remainder points to a location of the host data in the SDRAM. A command queue stores Q, R for host commands.
    • 闪存模块具有通过NVM控制器通过物理块地址(PBA)总线访问的原始NAND闪存芯片。 NVM控制器位于闪存模块或固态硬盘(SSD)的系统板上。 NVM控制器将逻辑块地址(LBA)转换为物理块地址(PBA)。 闪存模块的多个通道之间的数据条带化和交织由智能存储事务管理器控制在高电平,而在信道内的进一步的交织和重新映射可由NVM控制器执行。 智能存储交换机使用SDRAM缓冲区,在写入闪存之前缓存主机数据。 Q-R指针表存储主机地址的商和余数。 剩余部分指向SDRAM中主机数据的位置。 命令队列存储主机命令的Q,R。
    • 10. 发明授权
    • SRAM cache and flash micro-controller with differential packet interface
    • 具有差分数据包接口的SRAM缓存和闪存微控制器
    • US07707354B2
    • 2010-04-27
    • US11876251
    • 2007-10-22
    • Charles C. LeeDavid Q. ChowAbraham C. MaFrank YuMing-Shiang Shen
    • Charles C. LeeDavid Q. ChowAbraham C. MaFrank YuMing-Shiang Shen
    • G06F12/00
    • G06F12/0866G06F2212/2022G06F2212/2515
    • A flash microcontroller has a Static Random-Access-Memory (SRAM) buffer that stores several blocks of boot code read from a flash memory. The SRAM buffer also operates as a cache of flash data after booting is complete. Cache read and write hits use the SRAM cache rather than flash memory, while old cache lines and read misses access the flash memory. Both the external host and the microcontroller are booted from boot code buffered in the SRAM buffer. A boot-loader state machine reads the flash ID and programs flash parameter registers with timing parameters for the flash memory. The flash microcontroller uses a differential interface to the external host, with a differential transceiver and a differential serial interface. Frame, packet, and encoded clock processing is also performed by the serial interface.
    • 闪存微控制器具有静态随机存取存储器(SRAM)缓冲器,其存储从闪存读取的几个引导代码块。 引导完成后,SRAM缓冲区还可以作为闪存数据缓存。 缓存读取和写入命中使用SRAM缓存而不是闪存,而旧的缓存行和读取未命中访问闪存。 外部主机和微控制器均由缓冲在SRAM缓冲区中的引导代码引导。 引导加载器状态机读取闪存ID,并使用Flash存储器的时序参数对闪存参数寄存器进行编程。 闪存单片机使用与外部主机的差分接口,具有差分收发器和差分串行接口。 帧,分组和编码时钟处理也由串行接口执行。