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1. 发明申请

US20090193184A1 Hybrid 2-Level Mapping Tables for Hybrid Block- and Page-Mode Flash-Memory System 审中-公开
标题翻译：用于混合块和页模式闪存系统的混合二级映射表
公开(公告)号：US20090193184A1
公开(公告)日：2009-07-30
申请号：US12418550
申请日：2009-04-03
申请人： Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
发明人： Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7203 , G06F2212/7208 , G11C11/5628 , G11C11/5678 , G11C13/00 , G11C13/0004 , G11C2211/5641
摘要： A hybrid solid-state disk (SSD) has multi-level-cell (MLC) or single-level-cell (SLC) flash memory, or both. SLC flash may be emulated by MLC that uses fewer cell states. A NVM controller converts logical block addresses (LBA) to physical block addresses (PBA). Most data is block-mapped and stored in MLC flash, but some critical or high-frequency data is page-mapped to reduce block-relocation copying. A hybrid mapping table has a first-level and a second level. Only the first level is used for block-mapped data, but both levels are used for page-mapped data. The first level contains a block-page bit that indicates if the data is block-mapped or page-mapped. A PBA field in the first-level table maps block-mapped data, while a virtual field points to the second-level table where the PBA and page number is stored for page-mapped data. Page-mapped data is identified by a frequency counter or sector count. SRAM space is reduced.
摘要翻译：混合固态盘（SSD）具有多级单元（MLC）或单级单元（SLC）闪存，或两者兼有。 SLC闪存可能由使用较少单元状态的MLC仿真。 NVM控制器将逻辑块地址（LBA）转换为物理块地址（PBA）。大多数数据被块映射并存储在MLC闪存中，但是一些关键或高频数据被页映射以减少块重定位复制。混合映射表具有第一级和第二级。只有第一级用于块映射数据，但是这两个级别都用于页映射数据。第一级包含一个块页位，指示数据是块映射还是页映射。第一级表中的PBA字段映射块映射数据，而虚拟字段指向存储页面映射数据的PBA和页码的二级表。页面映射数据由频率计数器或扇区计数来标识。 SRAM空间减少。

2. 发明授权

US08266367B2 Multi-level striping and truncation channel-equalization for flash-memory system 有权
标题翻译：闪存系统的多级条带化和截断通道均衡
公开(公告)号：US08266367B2
公开(公告)日：2012-09-11
申请号：US12475457
申请日：2009-05-29
申请人： Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
发明人： Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0246 , G06F3/0608 , G06F3/0631 , G06F3/0688 , G06F2212/7203 , G06F2212/7208 , G11C11/5678 , G11C13/0004 , G11C29/765
摘要： Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.
摘要翻译：截断将所有闪存通道的可用条带数据容量减小到最小闪存通道的容量。固态磁盘（SSD）具有智能存储交换机，通过截断来保护从条带数据容量中移除的闪存存储。超出条带数据容量的额外存储被访问为不带条纹的分散数据。随着更多的坏块出现，条带数据容量的大小随着时间的推移而减少。一级条形图存储所有闪存通道的条纹和分散容量，并映射散射和条纹数据。每个闪存通道都具有一个非易失性存储器件（NVMD），该器件具有将逻辑块地址（LBA）转换为访问NVMD中闪存的物理块地址（PBA）的低级别控制器。磨损平整和坏块重映射由每个NVMD进行。源和阴影闪存块由NVMD回收。两级智能存储交换机支持三级控制器。

3. 发明申请

US20090240873A1 Multi-Level Striping and Truncation Channel-Equalization for Flash-Memory System 有权
标题翻译：闪存系统的多级条带和截断信道均衡
公开(公告)号：US20090240873A1
公开(公告)日：2009-09-24
申请号：US12475457
申请日：2009-05-29
申请人： Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
发明人： Frank Yu , Charles C. Lee , Abraham C. Ma , Myeongjin Shin
IPC分类号： G06F12/00 , G06F12/02 , H03M13/00
CPC分类号： G06F12/0246 , G06F3/0608 , G06F3/0631 , G06F3/0688 , G06F2212/7203 , G06F2212/7208 , G11C11/5678 , G11C13/0004 , G11C29/765
摘要： Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.
摘要翻译：截断将所有闪存通道的可用条带数据容量减小到最小闪存通道的容量。固态磁盘（SSD）具有智能存储交换机，通过截断来保护从条带数据容量中移除的闪存存储。超出条带数据容量的额外存储被访问为不带条纹的分散数据。随着更多的坏块出现，条带数据容量的大小随着时间的推移而减少。一级条形图存储所有闪存通道的条纹和分散容量，并映射散射和条纹数据。每个闪存通道都具有一个非易失性存储器件（NVMD），该器件具有将逻辑块地址（LBA）转换为访问NVMD中闪存的物理块地址（PBA）的低级别控制器。磨损平整和坏块重映射由每个NVMD进行。源和阴影闪存块由NVMD回收。两级智能存储交换机支持三级控制器。

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