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1. 发明授权

US5814819A System and method for neutralizing an ion beam using water vapor 失效
标题翻译：使用水蒸汽中和离子束的系统和方法
公开(公告)号：US5814819A
公开(公告)日：1998-09-29
申请号：US891688
申请日：1997-07-11
申请人： Frank Sinclair , Victor Benveniste , Jiong Chen
发明人： Frank Sinclair , Victor Benveniste , Jiong Chen
IPC分类号： H01J37/317 , C23C14/48 , G21K1/14 , H01J37/02 , H01J27/02
CPC分类号： H01J37/026 , H01J2237/31701
摘要： An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.
摘要翻译：提供改进的离子束中和器（22），用于中和从提取孔（50）输出的离子束（28）的电荷。中和器包括水源（52）; 连接到水源的蒸发器（54）; 连接到蒸发器的质量流量控制器（56）以及连接到质量流量控制器的入口（60）。蒸发器（54）将来自源（52）的水从液态转换为蒸汽状态。质量流量控制器（56）接收来自蒸发器（54）的水蒸汽并且测量由质量流量控制器出口（66）输出的水蒸汽的体积。入口（60）设置有靠近离子束提取孔（50）定位并从出口（66）接收计量体积的注射口（68）。注入口（68）位于提取孔附近，使得离子束和水蒸气相互作用以中和离子束。改进的离子束中和器（22）在低能量（小于十千伏电压（10KeV）））的应用中特别有效。

2. 发明授权

US08188448B2 Temperature controlled ion source 有权
标题翻译：温度控制离子源
公开(公告)号：US08188448B2
公开(公告)日：2012-05-29
申请号：US12754381
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/002
摘要： An ion source is provided that utilizes the same dopant gas supplied to the chamber to generate the desired process plasma to also provide temperature control of the chamber walls during high throughput operations. The ion source includes a chamber having a wall that defines an interior surface. A liner is disposed within the chamber and has at least one orifice to supply the dopant gas to an inside of the chamber. A gap is defined between at least a portion of the interior surface of the chamber wall and the liner. A first conduit is configured to supply dopant gas to the gap where the dopant gas has a flow rate within the gap. A second conduit is configured to remove the dopant gas from the gap, wherein the flow rate of the dopant gas within the gap acts as a heat transfer media to regulate the temperature of the interior of the chamber.
摘要翻译：提供了一种离子源，其利用提供给腔室的相同掺杂剂气体来产生所需的工艺等离子体，以在高通量操作期间提供室壁的温度控制。离子源包括具有限定内表面的壁的室。衬套设置在腔室内并且具有至少一个孔口以将掺杂剂气体供应到腔室的内部。在室壁的内表面的至少一部分和衬垫之间限定间隙。第一管道被配置为向掺杂剂气体在间隙内具有流速的间隙提供掺杂剂气体。第二导管构造成从间隙去除掺杂剂气体，其中间隙内的掺杂剂气体的流速用作传热介质以调节室内部的温度。

3. 发明授权

US08263941B2 Mass analysis magnet for a ribbon beam 有权
标题翻译：质量分析用于带状束的磁体
公开(公告)号：US08263941B2
公开(公告)日：2012-09-11
申请号：US12616589
申请日：2009-11-11
申请人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
发明人： Victor Benveniste , James S. Buff , Frank Sinclair , Joseph C. Olson
IPC分类号： H01J49/20
CPC分类号： H01J37/05 , H01J37/08 , H01J37/3171 , H01J49/30 , H01J2237/022 , H01J2237/055 , H01J2237/057 , H01J2237/083 , H01J2237/31705
摘要： A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.
摘要翻译：带状光束质量分析仪，具有第一和第二电磁线圈和钢轭装置。每个电磁线圈具有大致“跑道”结构，其限定了离子带束通过该空间行进的空间。螺线管线圈沿着带状束的行进方向间隔开。每个电磁线圈产生均匀的磁场以适应宽带束的质量分辨率，以产生从离子源产生的离子的期望图像。

4. 发明授权

US08129695B2 System and method for controlling deflection of a charged particle beam within a graded electrostatic lens 有权
标题翻译：用于控制渐变静电透镜内的带电粒子束的偏转的系统和方法
公开(公告)号：US08129695B2
公开(公告)日：2012-03-06
申请号：US12647950
申请日：2009-12-28
申请人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
发明人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
IPC分类号： G21K1/06
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译：公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

5. 发明申请

US20110240876A1 APPARATUS FOR CONTROLLING THE TEMPERATURE OF AN RF ION SOURCE WINDOW 失效
标题翻译：用于控制RF离子源窗口温度的装置
公开(公告)号：US20110240876A1
公开(公告)日：2011-10-06
申请号：US12754258
申请日：2010-04-05
申请人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
发明人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
IPC分类号： H01J27/02
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.
摘要翻译： RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

6. 发明申请

US20110155921A1 SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS 有权
标题翻译：控制抛光静电镜中带电粒子束的偏移的系统和方法
公开(公告)号：US20110155921A1
公开(公告)日：2011-06-30
申请号：US12647950
申请日：2009-12-28
申请人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
发明人： Peter L. Kellerman , Frank Sinclair , Victor Benveniste , Jun Lu
IPC分类号： G21K1/06 , H01J3/14
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of “virtual knobs” that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine tuning of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译：公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。该装置可以包括梯度偏转/减速透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调节施加到电极的电压的控制系统。使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。虚拟旋钮包括对束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的微调，同时约束光束在透镜出射处的位置。在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度时微调光束偏转来完成的。在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

7. 发明申请

US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
标题翻译：激光注射用于离子植入控制
公开(公告)号：US20100140077A1
公开(公告)日：2010-06-10
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： B01J19/08 , C23C16/513
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

8. 发明申请

US20110240877A1 TEMPERATURE CONTROLLED ION SOURCE 有权
标题翻译：温度控制离子源
公开(公告)号：US20110240877A1
公开(公告)日：2011-10-06
申请号：US12754318
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： H01J27/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
摘要翻译：提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。间隙界面限定在冷却板和腔室的壁之间。在给定压力下将冷却剂气体供应到界面，其中压力确定从冷却板到室的导热性，以控制室内部的温度。

9. 发明授权

US08501624B2 Excited gas injection for ion implant control 有权
标题翻译：激发气体注入用于离子注入控制
公开(公告)号：US08501624B2
公开(公告)日：2013-08-06
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

10. 发明授权

US08466431B2 Techniques for improving extracted ion beam quality using high-transparency electrodes 有权
标题翻译：使用高透明电极提高离子束质量的技术
公开(公告)号：US08466431B2
公开(公告)日：2013-06-18
申请号：US12370555
申请日：2009-02-12
申请人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
发明人： James S. Buff , Svetlana Radovanov , Bon-Woong Koo , Wilhelm Platow , Frank Sinclair , D. Jeffrey Lischer , Craig R. Chaney , Steven Borichevsky , Eric R. Cobb , Mayur Jagtap , Kenneth H. Purser , Victor Benveniste , Shardul S. Patel
IPC分类号： H01J37/15 , G21K5/10
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/304 , H01J2237/0453 , H01J2237/0458 , H01J2237/083 , H01J2237/24542
摘要： Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
摘要翻译：公开了使用高透明电极提高离子束质量的技术。在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

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