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1. 发明申请

US20140004717A1 LOW-K DIELECTRIC DAMAGE REPAIR BY VAPOR-PHASE CHEMICAL EXPOSURE 有权
标题翻译：通过蒸气相化学暴露对低K电介质损伤进行修复
公开(公告)号：US20140004717A1
公开(公告)日：2014-01-02
申请号：US13903483
申请日：2013-05-28
申请人： Kelvin CHAN , Alexandros T. DEMOS
发明人： Kelvin CHAN , Alexandros T. DEMOS
IPC分类号： H01L21/263
CPC分类号： H01L21/02348 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/2636 , H01L21/3105 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.
摘要翻译：提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外线（UV）固化过程。

2. 发明授权

US08877659B2 Low-k dielectric damage repair by vapor-phase chemical exposure 有权
标题翻译：气相化学暴露对低k介电损伤的修复
公开(公告)号：US08877659B2
公开(公告)日：2014-11-04
申请号：US13903483
申请日：2013-05-28
申请人： Kelvin Chan , Alexandros T. Demos
发明人： Kelvin Chan , Alexandros T. Demos
IPC分类号： H01L21/00 , H01L21/263 , H01L21/3105
CPC分类号： H01L21/02348 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/2636 , H01L21/3105 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.
摘要翻译：提供了一种用于修复和降低半导体制造中使用的低k电介质层的介电常数的方法。在一个实施方案中，修复损坏的低k电介质层的方法，包括将多孔低k电介质层暴露于含乙烯基硅烷的化合物，并任选地将多孔低k电介质层暴露于紫外（UV）固化过程。

3. 发明授权

US08492170B2 UV assisted silylation for recovery and pore sealing of damaged low K films 有权
标题翻译： UV辅助甲硅烷基化用于恢复和损坏的低K膜的孔密封
公开(公告)号：US08492170B2
公开(公告)日：2013-07-23
申请号：US13093351
申请日：2011-04-25
申请人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
发明人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
IPC分类号： H01L21/30
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供修复损坏的低k膜的方法。在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

4. 发明申请

US20120208366A1 PREVENTION AND REDUCTION OF SOLVENT AND SOLUTION PENETRATION INTO POROUS DIELECTRICS USING A THIN BARRIER LAYER 失效
标题翻译：使用薄壁隔离层防止和减少溶剂和溶液渗透到多孔电介质
公开(公告)号：US20120208366A1
公开(公告)日：2012-08-16
申请号：US13455299
申请日：2012-04-25
申请人： Kelvin Chan , Khaled A. Elsheref , Alexandros T. Demos , Meiyee Shek , Lipan Li , Li-Qun Xia , Kang Sub Yim
发明人： Kelvin Chan , Khaled A. Elsheref , Alexandros T. Demos , Meiyee Shek , Lipan Li , Li-Qun Xia , Kang Sub Yim
IPC分类号： H01L21/311
CPC分类号： H01L21/3141 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/31105 , H01L21/31116 , H01L21/31608 , H01L21/76814 , H01L21/76831
摘要： A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.
摘要翻译：提供了一种处理基板的方法和装置。在基板上形成多孔介电层。在一些实施例中，电介质可以由致密的电介质层封盖。对电介质层进行图案化，并且将致密的电介质层保形地沉积在衬底上。密实的保形介电层密封多孔介电层的孔隙，防止与可能渗入孔隙的物质接触。通过定向选择性蚀刻去除覆盖图案开口的场区域和底部部分的致密保形孔隙电介质层的部分。

5. 发明申请

US20080280457A1 METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER 有权
公开(公告)号：US20080280457A1
公开(公告)日：2008-11-13
申请号：US12170248
申请日：2008-07-09
申请人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
发明人： Dustin W. Ho , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
IPC分类号： H01L21/31
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351
摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

6. 发明申请

US20080119058A1 METHOD OF IMPROVING INITIATION LAYER FOR LOW-K DIELECTRIC FILM BY DIGITAL LIQUID FLOW METER 有权
标题翻译：通过数字液体流量计改善低K电介质膜的起始层的方法
公开(公告)号：US20080119058A1
公开(公告)日：2008-05-22
申请号：US11562021
申请日：2006-11-21
申请人： DUSTIN W. HO , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
发明人： DUSTIN W. HO , Juan Carlos Rocha-Alvarez , Alexandros T. Demos , Kelvin Chan , Nagarajan Rajagopalan , Visweswaren Sivaramakrishnan
IPC分类号： H01L21/312
CPC分类号： H01L21/31695 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351
摘要： A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.
摘要翻译：一种通过使氧化气体流入处理室来沉积低介电常数膜的方法，使有机硅化合物从大容量储存容器通过数字液体流量计以有机硅流速流动到汽化喷射阀，汽化有机硅化合物和使有机硅化合物和载气流入处理室，保持有机硅流速沉积起始层，使致孔剂化合物从大容量储存容器通过数字液体流量计以致孔剂流速流动到蒸发喷射阀，蒸发致孔剂化合物并使致孔剂化合物和载气流入处理室，同时沉积过渡层而增加有机硅流速和致孔剂流速，并保持第二有机硅流速和第二致孔剂流速以沉积含致孔剂的有机硅酸盐介电层。

7. 发明授权

US07297376B1 Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers 有权
标题翻译：用硅和有机前体在PECVD工艺中减少气相反应以沉积无缺陷初始层的方法
公开(公告)号：US07297376B1
公开(公告)日：2007-11-20
申请号：US11483842
申请日：2006-07-07
申请人： Kang Sub Yim , Kelvin Chan , Nagarajan Rajagopalan , Josephine Ju-Hwei Chang Liu , Sang H. Ahn , Yi Zheng , Sang In Yi , Vu Ngoc Tran Nguyen , Alexandros T. Demos
发明人： Kang Sub Yim , Kelvin Chan , Nagarajan Rajagopalan , Josephine Ju-Hwei Chang Liu , Sang H. Ahn , Yi Zheng , Sang In Yi , Vu Ngoc Tran Nguyen , Alexandros T. Demos
IPC分类号： H05H1/24
CPC分类号： C23C16/029 , C23C16/401 , C23C16/56
摘要： A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.
摘要翻译：通过将基板定位在具有动力电极的处理室内，并且将一种或多种有机硅化合物的流速和流速为1的起始气体混合物流入处理室，从而提供了一种沉积低介电常数膜的方法或更多的氧化气体，以通过向电极施加RF功率来沉积起始层。然后将有机硅化合物流速升高至最终流速以沉积第一过渡层，在该第一过渡层上引入一种或多种致孔剂化合物，并且将流速致孔剂化合物倾斜至最终沉积速率，同时沉积第二过渡层层。然后通过流动最终致孔剂和有机硅流速来沉积致孔剂掺杂的氧化硅层，直到RF功率关闭。

8. 发明授权

US10152467B2 Managing a sharing of media content among client computers 有权
公开(公告)号：US10152467B2
公开(公告)日：2018-12-11
申请号：US13572902
申请日：2012-08-13
申请人： Kelvin Chan , Yiyang Joy Ding
发明人： Kelvin Chan , Yiyang Joy Ding
IPC分类号： G06F15/16 , G06F17/24 , G06Q10/10 , H04L12/18
摘要： Technology is provided to manage sharing of media content among client computers. In one example, an application server provides at least a portion of the media content to the client computers. The application server receives a requested session event. A session event is an annotation, a comment, or a navigation request. The application server generates a formatted session event by formatting the requested session event at least according at least one option. An option defines how the application server is to modify a session event for display at the client computers. The application server provides the formatted session event to the client computers for display on user interfaces at the client computers. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

9. 发明申请

US20140047022A1 MANAGING A SHARING OF MEDIA CONTENT AMONG CIENT COMPUTERS 审中-公开
标题翻译：管理中心计算机的媒体内容共享
公开(公告)号：US20140047022A1
公开(公告)日：2014-02-13
申请号：US13572902
申请日：2012-08-13
申请人： Kelvin Chan , Yiyang Joy Ding
发明人： Kelvin Chan , Yiyang Joy Ding
IPC分类号： G06F15/16
CPC分类号： G06F17/241 , G06Q10/101 , H04L12/1822
摘要： Technology is provided to manage sharing of media content among client computers. In one example, an application server provides at least a portion of the media content to the client computers. The application server receives a requested session event. A session event is an annotation, a comment, or a navigation request. The application server generates a formatted session event by formatting the requested session event at least according at least one option. An option defines how the application server is to modify a session event for display at the client computers. The application server provides the formatted session event to the client computers for display on user interfaces at the client computers. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：提供技术来管理客户端计算机之间的媒体内容共享。在一个示例中，应用服务器向客户端计算机提供媒体内容的至少一部分。应用程序服务器接收请求的会话事件。会话事件是注释，注释或导航请求。应用服务器至少根据至少一个选项格式化请求的会话事件来生成格式化的会话事件。一个选项定义了应用程序服务器如何修改会话事件以在客户端计算机上显示。应用服务器将格式化的会话事件提供给客户端计算机，以便在客户端计算机上的用户界面上显示。提交本摘要的理解是，它不会用于解释或限制权利要求的范围或含义。

10. 发明申请

US20110100394A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 有权
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：US20110100394A1
公开(公告)日：2011-05-05
申请号：US12987948
申请日：2011-01-10
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B7/00
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于紫外线不到一分钟。可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

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