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1. 发明授权

US07776724B2 Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material 有权
标题翻译：用介电材料填充纳米颗粒薄膜的一组间隙空间的方法
公开(公告)号：US07776724B2
公开(公告)日：2010-08-17
申请号：US11950030
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/208 , C30B25/04
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密化纳米颗粒薄膜的方法。该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑型; 以及将所述基板定位在第二室中，所述第二室具有介于约1×10 -7乇至约1×10 -4乇之间的压力。该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

2. 发明申请

US20080182390A1 METHODS OF FILLING A SET OF INTERSTITIAL SPACES OF A NANOPARTICLE THIN FILM WITH A DIELECTRIC MATERIAL 有权
标题翻译：用介电材料填充纳米薄膜的一组间隔空间的方法
公开(公告)号：US20080182390A1
公开(公告)日：2008-07-31
申请号：US11950030
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密化纳米颗粒薄膜的方法。该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑型; 以及将所述衬底定位在第二腔室中，所述第二腔室具有在约1×10 -7 Torr至约1×10 -4 Torr之间的压力。该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

3. 发明申请

US20080146005A1 METHODS FOR CREATING A DENSIFIED GROUP IV SEMICONDUCTOR NANOPARTICLE THIN FILM 失效
标题翻译：用于形成透明IV族半导体纳米薄膜的方法
公开(公告)号：US20080146005A1
公开(公告)日：2008-06-19
申请号：US11950024
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/36
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

4. 发明授权

US07521340B2 Methods for creating a densified group IV semiconductor nanoparticle thin film 失效
标题翻译：用于形成致密化的IV族半导体纳米颗粒薄膜的方法
公开(公告)号：US07521340B2
公开(公告)日：2009-04-21
申请号：US11950024
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/20
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

5. 发明申请

US20080063855A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20080063855A1
公开(公告)日：2008-03-13
申请号：US11851004
申请日：2007-09-06
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B3/26 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

6. 发明申请

US20110091731A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20110091731A1
公开(公告)日：2011-04-21
申请号：US12967378
申请日：2010-12-14
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B15/04 , H01B1/04 , H01B1/02 , B32B17/06 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

7. 发明申请

US20080078441A1 SEMICONDUCTOR DEVICES AND METHODS FROM GROUP IV NANOPARTICLE MATERIALS 审中-公开
标题翻译：第四族纳米材料的半导体器件和方法
公开(公告)号：US20080078441A1
公开(公告)日：2008-04-03
申请号：US11857854
申请日：2007-09-19
申请人： Dmitry Poplavskyy , Homer Antoniadis , David Jurbergs , Maxim Kelman , Francesco Lemmi , Pingrong Yu
发明人： Dmitry Poplavskyy , Homer Antoniadis , David Jurbergs , Maxim Kelman , Francesco Lemmi , Pingrong Yu
IPC分类号： H01L31/00 , H01L21/02
CPC分类号： H01L31/076 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该装置包括基板; 形成在基板上方的绝缘层; 以及形成在所述绝缘层之上的第一电极。该器件还包括沉积在第一电极上的第一掺杂的IV族纳米颗粒薄膜; 以及沉积在第一掺杂的IV族纳米颗粒薄膜上的第二掺杂的IV族纳米颗粒薄膜。该器件还包括沉积在第二掺杂的IV族纳米颗粒薄膜上的第三掺杂的IV族纳米颗粒薄膜; 沉积在第三掺杂的IV族纳米颗粒薄膜上的第四掺杂的IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。其中当向第四掺杂的IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

8. 发明申请

US20080305619A1 METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
标题翻译：使用激光加工形成IV族半导体结的方法
公开(公告)号：US20080305619A1
公开(公告)日：2008-12-11
申请号：US12114141
申请日：2008-05-02
申请人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
发明人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L31/182 , H01L21/0237 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02675 , H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/077 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
摘要翻译：公开了一种在衬底上形成IV族半导体结的方法。该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

9. 发明授权

US07923368B2 Junction formation on wafer substrates using group IV nanoparticles 有权
标题翻译：使用IV族纳米粒子在晶片衬底上形成结
公开(公告)号：US07923368B2
公开(公告)日：2011-04-12
申请号：US12109684
申请日：2008-04-25
申请人： Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
发明人： Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
IPC分类号： H01L21/44
CPC分类号： H01L21/2256 , H01L21/02532 , H01L21/02573 , H01L21/02601 , H01L21/02628 , H01L21/2257 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
摘要翻译：公开了形成扩散区域的方法。该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并且持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。

10. 发明申请

US20110003466A1 METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON 审中-公开
标题翻译：用多孔硅形成多层结的方法
公开(公告)号：US20110003466A1
公开(公告)日：2011-01-06
申请号：US12794188
申请日：2010-06-04
申请人： Giuseppe Scardera , Homer Antoniadis , Nick Cravalho , Maxim Kelman , Elena Rogojina , Karel Vanheusden
发明人： Giuseppe Scardera , Homer Antoniadis , Nick Cravalho , Maxim Kelman , Elena Rogojina , Karel Vanheusden
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3 gas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前结晶衬底表面; 以及在所述前晶体衬底表面上形成掩模，所述掩模包括暴露的掩模区域和未暴露的掩模区域。该方法还包括将掩模暴露于蚀刻剂，其中多孔硅形成在由暴露的掩模区限定的前结晶衬底表面上; 并取下面罩。该方法还包括在第一温度和第一时间段内，使沉积环境包括沉积环境包含POCl 3气体的扩散炉中的衬底暴露于掺杂剂源，其中在前衬底表面上形成PSG层; 以及将驱动环境中的衬底加热至第二温度并持续第二时间段。其中在多孔硅下方形成具有第一薄层电阻的第一扩散区域，并且在没有多孔硅的前结晶衬底表面下形成具有第二薄层电阻的第二扩散区域，并且其中第一薄层电阻显着小于第二片电阻。

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