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1. 发明授权

US07776724B2 Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material 有权
标题翻译：用介电材料填充纳米颗粒薄膜的一组间隙空间的方法
公开(公告)号：US07776724B2
公开(公告)日：2010-08-17
申请号：US11950030
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/208 , C30B25/04
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密化纳米颗粒薄膜的方法。该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑型; 以及将所述基板定位在第二室中，所述第二室具有介于约1×10 -7乇至约1×10 -4乇之间的压力。该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

2. 发明申请

US20080182390A1 METHODS OF FILLING A SET OF INTERSTITIAL SPACES OF A NANOPARTICLE THIN FILM WITH A DIELECTRIC MATERIAL 有权
标题翻译：用介电材料填充纳米薄膜的一组间隔空间的方法
公开(公告)号：US20080182390A1
公开(公告)日：2008-07-31
申请号：US11950030
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10−7 Torr and about 1×10−4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密化纳米颗粒薄膜的方法。该方法包括将基板定位在第一室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑型; 以及将所述衬底定位在第二腔室中，所述第二腔室具有在约1×10 -7 Torr至约1×10 -4 Torr之间的压力。该方法还包括在多孔压块上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

3. 发明申请

US20080146005A1 METHODS FOR CREATING A DENSIFIED GROUP IV SEMICONDUCTOR NANOPARTICLE THIN FILM 失效
标题翻译：用于形成透明IV族半导体纳米薄膜的方法
公开(公告)号：US20080146005A1
公开(公告)日：2008-06-19
申请号：US11950024
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/36
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

4. 发明授权

US07521340B2 Methods for creating a densified group IV semiconductor nanoparticle thin film 失效
标题翻译：用于形成致密化的IV族半导体纳米颗粒薄膜的方法
公开(公告)号：US07521340B2
公开(公告)日：2009-04-21
申请号：US11950024
申请日：2007-12-04
申请人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
发明人： Francesco Lemmi , Elena V. Rogojina , Pingrong Yu , David Jurbergs , Homer Antoniadis , Maxim Kelman
IPC分类号： H01L21/20
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成紧凑。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃的第二温度; 并将所述多孔压块加热至约100℃至约1000℃之间的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

5. 发明申请

US20080063855A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20080063855A1
公开(公告)日：2008-03-13
申请号：US11851004
申请日：2007-09-06
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B3/26 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

6. 发明申请

US20110091731A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：US20110091731A1
公开(公告)日：2011-04-21
申请号：US12967378
申请日：2010-12-14
申请人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
发明人： Maxim Kelman , Pingrong Yu , Manikandan Jayaraman , Dmitry Poplavskyy , David Jurbergs , Francesco Lemmi , Homer Antoniadis
IPC分类号： B32B15/04 , H01B1/04 , H01B1/02 , B32B17/06 , H01L21/20
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

7. 发明申请

US20080078441A1 SEMICONDUCTOR DEVICES AND METHODS FROM GROUP IV NANOPARTICLE MATERIALS 审中-公开
标题翻译：第四族纳米材料的半导体器件和方法
公开(公告)号：US20080078441A1
公开(公告)日：2008-04-03
申请号：US11857854
申请日：2007-09-19
申请人： Dmitry Poplavskyy , Homer Antoniadis , David Jurbergs , Maxim Kelman , Francesco Lemmi , Pingrong Yu
发明人： Dmitry Poplavskyy , Homer Antoniadis , David Jurbergs , Maxim Kelman , Francesco Lemmi , Pingrong Yu
IPC分类号： H01L31/00 , H01L21/02
CPC分类号： H01L31/076 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该装置包括基板; 形成在基板上方的绝缘层; 以及形成在所述绝缘层之上的第一电极。该器件还包括沉积在第一电极上的第一掺杂的IV族纳米颗粒薄膜; 以及沉积在第一掺杂的IV族纳米颗粒薄膜上的第二掺杂的IV族纳米颗粒薄膜。该器件还包括沉积在第二掺杂的IV族纳米颗粒薄膜上的第三掺杂的IV族纳米颗粒薄膜; 沉积在第三掺杂的IV族纳米颗粒薄膜上的第四掺杂的IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。其中当向第四掺杂的IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

8. 发明申请

US20080138966A1 METHOD OF FABRICATING A DENSIFIED NANOPARTICLE THIN FILM WITH A SET OF OCCLUDED PORES 审中-公开
标题翻译：用一组封闭的聚四氟乙烯薄膜制造方法
公开(公告)号：US20080138966A1
公开(公告)日：2008-06-12
申请号：US11940056
申请日：2007-11-14
申请人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
发明人： Elena V. Rogojina , Francesco Lemmi , Maxim Kelman , Xuegeng Li , Pingrong Yu
IPC分类号： H01L21/208
CPC分类号： H01L31/1804 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02664 , H01L31/06 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a densified nanoparticle thin film with a set of occluded pores in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method further includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 5 minutes and about 60 minutes, wherein the solvent is substantially removed, and a porous compact with a set of pores is formed. The method also includes heating the porous compact to a second temperature between about 300° C. and about 900° C., and for a second time period of between about 5 minutes and about 15 minutes, and flowing a precursor gas into the chamber at a partial pressure between about 0.1 Torr and about 50 Torr, wherein the precursor gas substantially fills the set of pores, and wherein the densified nanoparticle film with the set of occluded pores is formed.
摘要翻译：公开了一种在腔室中制造具有一组闭塞孔的致密纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约5分钟至约60分钟的第一时间，其中基本上除去溶剂，并且将多孔形成一组细孔。该方法还包括将多孔压块加热至约300℃至约900℃之间的第二温度和约5分钟至约15分钟的第二时间段，并将前体气体流入室中在约0.1托和约50托之间的分压，其中前体气体基本上填充该组孔，并且其中形成具有该组闭塞孔的致密纳米颗粒膜。

9. 发明申请

US20080305619A1 METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
标题翻译：使用激光加工形成IV族半导体结的方法
公开(公告)号：US20080305619A1
公开(公告)日：2008-12-11
申请号：US12114141
申请日：2008-05-02
申请人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
发明人： Francesco Lemmi , Andreas Meisel , Homer Antoniadis
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L31/182 , H01L21/0237 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02675 , H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/077 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
摘要翻译：公开了一种在衬底上形成IV族半导体结的方法。该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率应用于第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

10. 发明申请

US20120009721A1 GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM 审中-公开
标题翻译：第四组纳米晶体结及其器件
公开(公告)号：US20120009721A1
公开(公告)日：2012-01-12
申请号：US13239806
申请日：2011-09-22
申请人： Malcolm Abbott , Maxim Kelman , Francesco Lemmi , Andreas Meisel , Dmitry Poplavskyy , Mason Terry , Karel Vanheusden
发明人： Malcolm Abbott , Maxim Kelman , Francesco Lemmi , Andreas Meisel , Dmitry Poplavskyy , Mason Terry , Karel Vanheusden
IPC分类号： H01L31/18
CPC分类号： H01L31/0352 , H01L31/056 , H01L31/061 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

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