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    • 3. 发明授权
    • Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles
    • 使用一组硅纳米颗粒流体原位控制一组掺杂剂扩散分布的方法
    • US08138070B2
    • 2012-03-20
    • US12626198
    • 2009-11-25
    • Maxim KelmanMichael BurrowsDmitry PoplavskyyGiuseppe ScarderaDaniel KrayElena Rogojina
    • Maxim KelmanMichael BurrowsDmitry PoplavskyyGiuseppe ScarderaDaniel KrayElena Rogojina
    • H01L21/04
    • H01L21/2225H01L21/223H01L21/2257H01L31/022425H01L31/068H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient containing POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas for a second time period; and heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.
    • 公开了形成多掺杂结的方法。 该方法包括提供第一基板和第二基板。 该方法还包括在第一基底和第二基底中的每一个的第一表面上沉积第一墨水,第一墨水含有第一组纳米颗粒和第一组溶剂,第一组纳米颗粒含有第一浓度的 第一掺杂剂。 该方法还包括在第一基底和第二基底中的每一个的第二表面上沉积第二墨,第二墨含有第二组纳米颗粒和第二组溶剂,第二组纳米颗粒含有第二浓度的 第二掺杂剂。 该方法还包括将第一衬底和第二衬底放置在背对背配置中; 以及在第一驱动环境中将所述第一基板和所述第二基板加热到第一温度并且持续第一时间段。 该方法还包括将第一衬底和第二衬底以背对背构型暴露于沉积环境中,沉积环境包含POCl 3,载体N2气体,主N 2气体和反应性O 2气体,持续第二时间段; 以及在第二驱动环境中将所述第一基板和所述第二基板加热到第三温度第三时间段。
    • 4. 发明申请
    • METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON
    • 用多孔硅形成多层结的方法
    • US20110003466A1
    • 2011-01-06
    • US12794188
    • 2010-06-04
    • Giuseppe ScarderaHomer AntoniadisNick CravalhoMaxim KelmanElena RogojinaKarel Vanheusden
    • Giuseppe ScarderaHomer AntoniadisNick CravalhoMaxim KelmanElena RogojinaKarel Vanheusden
    • H01L21/22
    • H01L21/2255H01L31/022425H01L31/068H01L31/1804Y02E10/547Y02P70/521
    • A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3 gas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
    • 公开了一种在衬底上形成多掺杂结的方法。 该方法包括提供掺杂有硼原子的衬底,该衬底包括前结晶衬底表面; 以及在所述前晶体衬底表面上形成掩模,所述掩模包括暴露的掩模区域和未暴露的掩模区域。 该方法还包括将掩模暴露于蚀刻剂,其中多孔硅形成在由暴露的掩模区限定的前结晶衬底表面上; 并取下面罩。 该方法还包括在第一温度和第一时间段内,使沉积环境包括沉积环境包含POCl 3气体的扩散炉中的衬底暴露于掺杂剂源,其中在前衬底表面上形成PSG层; 以及将驱动环境中的衬底加热至第二温度并持续第二时间段。 其中在多孔硅下方形成具有第一薄层电阻的第一扩散区域,并且在没有多孔硅的前结晶衬底表面下形成具有第二薄层电阻的第二扩散区域,并且其中第一薄层电阻显着小于 第二片电阻。
    • 5. 发明申请
    • Methods of forming a multi-doped junction with silicon-containing particles
    • 与含硅颗粒形成多掺杂结的方法
    • US20110003465A1
    • 2011-01-06
    • US12656710
    • 2010-02-12
    • Giuseppe ScarderaShihai KanMaxim KelmanDmitry Poplavskyy
    • Giuseppe ScarderaShihai KanMaxim KelmanDmitry Poplavskyy
    • H01L21/223
    • H01L21/2255H01L31/022425H01L31/068H01L31/1804Y02E10/547Y02P70/521
    • A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a second temperature and for a second time period, wherein a PSG layer is formed on the front substrate surface and on the densified film ink pattern; and heating the substrate in a drive-in ambient to a third temperature; wherein a first diffused region with a first sheet resistance is formed under the front substrate surface covered by the densified film ink pattern, and a second diffused region with a second sheet resistance is formed under the front substrate surface not covered with the densified film ink pattern, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
    • 公开了一种在衬底上形成多掺杂结的方法。 该方法包括提供掺杂有硼原子的衬底,该衬底包括前衬底表面。 该方法还包括以油墨图案在前基板表面上沉积油墨,该油墨包括一组含硅颗粒和一组溶剂。 该方法还包括将烘烤环境中的基材加热到第一温度并在第一时间段内,以便产生致密的薄膜油墨图案。 该方法还包括:在具有沉积环境的扩散炉中将衬底暴露于掺杂剂源,沉积环境包括POCl 3,载体N2气体,主N 2气体和在第二温度下的反应性O 2气体,并且第二次 其中在前基板表面和致密薄膜墨图案上形成PSG层; 以及将驱动环境中的衬底加热至第三温度; 其特征在于,在被所述致密膜油墨图案覆盖的前面基板表面的下方形成有具有第一薄层电阻的第一扩散区域,在未被所述致密化薄膜墨水图案覆盖的所述前面基板表面的下方形成具有第二薄层电阻的第二扩散区域 ,并且其中所述第一薄层电阻基本上小于所述第二薄层电阻。
    • 7. 发明授权
    • Methods of forming a floating junction on a solar cell with a particle masking layer
    • 在具有颗粒掩蔽层的太阳能电池上形成浮点的方法
    • US08513104B2
    • 2013-08-20
    • US13172040
    • 2011-06-29
    • Malcolm AbbottMaxim KelmanEric RosenfeldElena RogojinaGiuseppe Scardera
    • Malcolm AbbottMaxim KelmanEric RosenfeldElena RogojinaGiuseppe Scardera
    • H01L21/22H01L21/38
    • H01L21/2255H01L31/022425H01L31/068H01L31/1804Y02E10/547Y02P70/521
    • A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The method also includes exposing the substrate to a set of etchants for a third time period, wherein the front surface PSG layer and the rear surface PSG layer are substantially removed; depositing a front surface SiNx layer and a rear surface SiNx layer; and forming a rear metal contact on the rear surface through the rear surface SiNx layer proximate to the set of patterns.
    • 公开了一种在衬底上形成浮点的方法。 该方法包括提供掺杂有硼原子的衬底,该衬底包括前表面和后表面。 该方法还包括在一组图案中的后表面上沉积一组掩模颗粒; 以及在烘烤环境中将基底加热到第一温度并且持续第一时间段以便产生颗粒掩蔽层。 该方法还包括在第二温度和第二时间段内将衬底暴露于磷沉积环境中,其中形成前表面PSG层,前表面磷扩散层,后表面PSG层和后表面磷扩散层 ,并且其中靠近所述图案集合的所述衬底中的第一磷掺杂剂表面浓度小于所述衬底中不接近所述图案集合的第二掺杂剂表面浓度。 该方法还包括将衬底暴露于一组第三时间的蚀刻剂,其中基本上去除了前表面PSG层和后表面PSG层; 沉积前表面SiNx层和后表面SiNx层; 以及通过靠近所述一组图案的后表面SiNx层在后表面上形成后金属接触。