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1. 发明授权

US08529680B2 Compositions for CMP of semiconductor materials 有权
标题翻译：半导体材料CMP的组成
公开(公告)号：US08529680B2
公开(公告)日：2013-09-10
申请号：US12854470
申请日：2010-08-11
申请人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
IPC分类号： C09G1/02 , B24D3/02 , C09C1/68 , C09K3/14
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译：本发明提供了用于化学机械抛光的组合物。组合物包含研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位。在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。

2. 发明授权

US07803203B2 Compositions and methods for CMP of semiconductor materials 有权
标题翻译：半导体材料CMP的组成和方法
公开(公告)号：US07803203B2
公开(公告)日：2010-09-28
申请号：US11673399
申请日：2007-02-09
申请人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
IPC分类号： C09K3/14 , B24B1/00 , B24B7/10
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译：本发明提供了用于化学机械抛光的组合物。组合物包含研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位。在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。

3. 发明申请

US20070181535A1 COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS 有权
标题翻译：用于半导体材料的CMP的组合物和方法
公开(公告)号：US20070181535A1
公开(公告)日：2007-08-09
申请号：US11673399
申请日：2007-02-09
申请人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
IPC分类号： H01L21/461 , C09K13/00 , C03C15/00 , B44C1/22 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译：本发明提供了一种用于化学机械抛光的组合物。该组合物包括研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位。在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。

4. 发明授权

US08691695B2 CMP compositions and methods for suppressing polysilicon removal rates 有权
标题翻译： CMP组合物和抑制多晶硅去除速率的方法
公开(公告)号：US08691695B2
公开(公告)日：2014-04-08
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/302 , B44C1/22 , H01L21/3105 , H01L21/321 , C09K3/14 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

5. 发明申请

US20120094489A1 CMP COMPOSITIONS AND METHODS FOR SUPPRESSING POLYSILICON REMOVAL RATES 有权
标题翻译：用于抑制多晶硅去除速率的CMP组合物和方法
公开(公告)号：US20120094489A1
公开(公告)日：2012-04-19
申请号：US13379911
申请日：2010-06-18
申请人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
发明人： Kevin Moeggenborg , William Ward , Ming-Shih Tsai , Francesco De Rege Thesauro
IPC分类号： H01L21/306 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要翻译：本发明提供了一种适于抛光含氮化硅的衬底同时抑制从衬底去除多晶硅的化学机械抛光（CMP）组合物。该组合物包含悬浮在酸性含水载体中的磨料颗粒，该载体含有包含炔二醇，炔二醇乙氧基化物或其组合的表面活性剂。还公开了对其半导体衬底进行抛光的方法。

6. 发明申请

US20080057715A1 CMP SYSTEM UTILIZING HALOGEN ADDUCT 有权
标题翻译： CMP系统利用卤素添加剂
公开(公告)号：US20080057715A1
公开(公告)日：2008-03-06
申请号：US11673518
申请日：2007-02-09
申请人： Steven Grumbine , Francesco De Rege Thesauro
发明人： Steven Grumbine , Francesco De Rege Thesauro
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.01 mM or more in the aqueous carrier. The invention also provides a method of polishing a substrate comprising (i) providing the aforementioned chemical-mechanical polishing system, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate,
摘要翻译：本发明提供了一种用于抛光衬底的化学机械抛光系统，其包括（a）选自研磨剂，抛光垫或研磨剂和抛光垫两者的抛光组分，（b）水性载体，和（c）由（1）选自碘，溴及其组合的氧化剂的反应产生的卤素加合物，和（2）pKa为约3至约14的碳酸，其中卤素加合物为在水性载体中以约0.01mM或更高的浓度存在。本发明还提供了一种抛光衬底的方法，其包括（i）提供上述化学机械抛光系统，（ii）使衬底与抛光系统接触，和（iii）研磨衬底表面的至少一部分，抛光系统对基材进行抛光，

7. 发明授权

US07776230B2 CMP system utilizing halogen adduct 有权
标题翻译：使用卤素加合物的CMP系统
公开(公告)号：US07776230B2
公开(公告)日：2010-08-17
申请号：US11673518
申请日：2007-02-09
申请人： Steven Grumbine , Francesco De Rege Thesauro
发明人： Steven Grumbine , Francesco De Rege Thesauro
IPC分类号： C03C15/00
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.01 mM or more in the aqueous carrier. The invention also provides a method of polishing a substrate comprising (i) providing the aforementioned chemical-mechanical polishing system, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate.
摘要翻译：本发明提供了一种用于抛光衬底的化学机械抛光系统，其包括（a）选自研磨剂，抛光垫或研磨剂和抛光垫两者的抛光组分，（b）水性载体，和（c）由（1）选自碘，溴及其组合的氧化剂的反应产生的卤素加合物，和（2）pKa为约3至约14的碳酸，其中卤素加合物为在水性载体中以约0.01mM或更高的浓度存在。本发明还提供了一种抛光衬底的方法，其包括（i）提供上述化学机械抛光系统，（ii）使衬底与抛光系统接触，和（iii）研磨衬底表面的至少一部分，抛光系统抛光底物。

8. 发明授权

US07316603B2 Compositions and methods for tantalum CMP 有权
标题翻译：钽CMP的组成和方法
公开(公告)号：US07316603B2
公开(公告)日：2008-01-08
申请号：US11235765
申请日：2005-09-26
申请人： Phillip W. Carter , Jian Zhang , Steven K. Grumbine , Francesco De Rege Thesauro
发明人： Phillip W. Carter , Jian Zhang , Steven K. Grumbine , Francesco De Rege Thesauro
IPC分类号： C09K3/14 , C09K13/06 , B24B1/00
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.
摘要翻译：适用于钽化学机械抛光（CMP）的组合物包括研磨剂，有机氧化剂和用于其的液体载体。有机氧化剂相对于标准氢电极具有不超过约0.5V的标准氧化还原电位（E 0 SUP 0）。氧化形式包含至少一个π-共轭环，其包括至少一个直接连接在环上的杂原子。杂原子可以是N，O，S或它们的组合。在方法实施方案中，使用包含磨料和相对于标准氢电极不超过约0.7V的E 0有机氧化剂的CMP组合物及其液体载体来抛光通过用组合物研磨基底的表面，优选借助于抛光垫，将基底的含钽表面。

9. 发明授权

US07161247B2 Polishing composition for noble metals 有权
标题翻译：贵金属抛光组合物
公开(公告)号：US07161247B2
公开(公告)日：2007-01-09
申请号：US10901420
申请日：2004-07-28
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher C. Thompson , Benjamin P. Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Christopher C. Thompson , Benjamin P. Bayer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and α-hydroxycarbonyl compounds.
摘要翻译：本发明提供一种抛光组合物和一种化学机械抛光包含贵金属的基材的方法，所述抛光组合物包含（a）氧化贵金属的氧化剂，（b）选自硫酸盐，硼酸盐，硝酸盐和磷酸盐，和（c）液体载体。本发明还提供一种抛光组合物和一种化学机械抛光包含钌的基材的方法，该抛光组合物包含（a）氧化高于+4氧化态的钌的氧化剂，（b）选自下组的抛光添加剂：由金属螯合聚合物，金属螯合剂，有机硫醇，还原四氧化钌的化合物，内酯和α-羟基羰基化合物组成。

10. 发明授权

US07160807B2 CMP of noble metals 有权
标题翻译：贵金属的CMP
公开(公告)号：US07160807B2
公开(公告)日：2007-01-09
申请号：US10610407
申请日：2003-06-30
申请人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
发明人： Francesco De Rege Thesauro , Vlasta Brusic , Benjamin P. Bayer
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212
摘要： The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.
摘要翻译：本发明提供了一种抛光衬底的方法，其包括（i）使包含贵金属层的衬底与化学机械抛光系统接触，所述化学机械抛光系统包括（a）抛光组分，（b）氧化剂和（c）液体载体，和（ii）研磨贵金属层的至少一部分以抛光基底。抛光组分选自研磨剂，抛光垫或其组合，氧化剂选自溴酸盐，溴酸盐，次溴酸盐，氯酸盐，亚氯酸盐，次氯酸盐，高氯酸盐，碘酸盐，次碘酸盐，高碘酸酯，过氧乙酸，有机卤代氧化合物，其盐，及其组合。化学机械抛光系统的pH值约为9或更低，氧化剂不产生大量的元素卤素。本发明还提供了一种使用上述抛光系统抛光包含贵金属层和第二层的衬底的方法，所述抛光系统还包括停止化合物。

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