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    • 3. 发明授权
    • Receiver portion of a telephone
    • 电话的接收器部分
    • US06535724B1
    • 2003-03-18
    • US09619193
    • 2000-07-19
    • Sergio PerniciGermano Nicollini
    • Sergio PerniciGermano Nicollini
    • H04B110
    • H03G3/348
    • A receiver portion of a telephone includes a differential amplifier stage with a single output, an electroacoustic transducer connected between the output, via a capacitor and ground and a unit for controlling switching on/off, connected to the differential stage for the activation or deactivation thereof. To prevent annoying noises in the transducer upon switching on and off, the differential stage includes an operational amplifier having a first capacitor and a second capacitor in series with the inverting and the non-inverting input terminals. A third capacitor is connected between the inverting input and the output of the operational amplifier. A fourth capacitor is connected between the non-inverting input and a first reference-voltage terminal. A first switching capacitor is alternatively connectable between a second and a third reference-voltage terminal, or between the first input and the output of the operational amplifier. A second switching capacitor is alternatively connectable between a fourth and a fifth reference-voltage terminal, or between the second input of the operational amplifier and the fifth reference-voltage terminal.
    • 电话的接收机部分包括具有单个输出的差分放大器级,连接在输出之间的电声换能器,经由电容器和接地以及用于控制开关导通/断开的单元,连接到差动级以用于其激活或停用 。 为了防止在接通和断开时换能器中的烦扰,差动级包括运算放大器,其具有与反相和非反相输入端串联的第一电容器和第二电容器。 第三电容器连接在反相输入端和运算放大器的输出端之间。 第四电容器连接在非反相输入端和第一参考电压端子之间。 第一开关电容器可交替地连接在第二和第三参考电压端子之间,或在运算放大器的第一输入端和输出端之间。 第二开关电容器可交替地连接在第四和第五参考电压端子之间,或在运算放大器的第二输入端与第五参考电压端子之间。
    • 7. 发明授权
    • Integrated circuit with device for protection against electrostatic discharges
    • 具有防静电放电设备的集成电路
    • US08174807B2
    • 2012-05-08
    • US13195716
    • 2011-08-01
    • Pierangelo ConfalonieriRiccardo MartignoneSergio Pernici
    • Pierangelo ConfalonieriRiccardo MartignoneSergio Pernici
    • H02H9/00
    • H01L27/0288
    • An integrated circuit includes a substrate of semiconductive material, a first circuit environment made from the substrate which includes an output terminal and a first pair of power supply terminals for receiving a first power supply voltage applicable between the terminals. The integrated circuit also includes a second circuit environment made from the semiconductor substrate which includes an input terminal electrically coupled to the output terminal and also includes a second pair of power supply terminals for receiving a second power supply voltage applicable between the second pair of terminals of said second pair. The circuit further includes a device providing protection from electrostatic discharges which includes an integrated resistive device coupled between the input and output terminals.
    • 集成电路包括半导体材料的衬底,由衬底制成的第一电路环境,其包括输出端子和用于接收可用于端子之间的第一电源电压的第一对电源端子。 集成电路还包括由半导体衬底制成的第二电路环境,该第二电路环境包括电耦合到输出端子的输入端子,并且还包括第二对电源端子,用于接收适用于第二对端子之间的第二电源电压 说第二对 电路还包括提供防止静电放电的装置,其包括耦合在输入和输出端子之间的集成电阻装置。
    • 10. 发明授权
    • Low-noise amplifier with high input impedance, particularly for
microphones
    • 具有高输入阻抗的低噪声放大器,特别是麦克风
    • US5489876A
    • 1996-02-06
    • US987151
    • 1992-12-08
    • Sergio Pernici
    • Sergio Pernici
    • H03F3/187H03F3/26H03F3/45
    • H03F3/265H03F2200/372
    • The amplifier includes a pair of bipolar input transistors (Q1, Q2), each having a base adapted to receive a differential input signal, a collector and an emitter which is biased by a first fixed current source (M7, M8) of its own and a degeneration resistor (R) which connects the emitters of the two bipolar transistors. The collector of each bipolar transistor is also biased by a second fixed current source (M5, M6) with a smaller current than that of the first source, and the collectors of the two bipolar transistors are furthermore connected to the input terminals of respective MOS amplifier devices (M1, M2, M3, M4, R.sub.L). The amplifier can be made in BCD, BiCMOS or purely CMOS technology, in which case the bipolar transistors are obtained as lateral bipolar transistors.
    • 放大器包括一对双极性输入晶体管(Q1,Q2),每一个具有适于接收差分输入信号的基极,由本身的第一固定电流源(M7,M8)偏置的集电极和发射极,以及 连接两个双极晶体管的发射极的退化电阻(R)。 每个双极晶体管的集电极也被具有比第一源极小的电流的第二固定电流源(M5,M6)偏置,并且两个双极晶体管的集电极还连接到各个MOS放大器的输入端 设备(M1,M2,M3,M4,RL)。 放大器可以采用BCD,BiCMOS或纯CMOS技术制造,在这种情况下,双极晶体管可作为横向双极晶体管获得。