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1. 发明授权

US06433484B1 Wafer area pressure control 有权
标题翻译：晶圆面积压力控制
公开(公告)号：US06433484B1
公开(公告)日：2002-08-13
申请号：US09637736
申请日：2000-08-11
申请人： Fangli Hao , Eric Lenz , Bruno Morel
发明人： Fangli Hao , Eric Lenz , Bruno Morel
IPC分类号： H01G724
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a confinement device that provides wafer area pressure control greater than 40%. Such a confinement device may be a fixed vertical restriction ring in addition to the confinement ring, where the confinement ring is adjustable. In the alternative, three adjustable confinement rings may be used to provide the desired wafer area pressure control.
摘要翻译：提供等离子体处理室，其提供改进的晶片面积压力控制。等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。该装置的一部分将是蚀刻剂气源和排气口。限制环限定晶片上方的区域。晶片面积压力取决于限制环上的压降。限制环是限制装置的一部分，其提供超过40％的晶片面积压力控制。除了限制环之外，这种限制装置可以是固定的垂直限制环，其中限制环是可调节的。在替代方案中，可以使用三个可调约束环来提供期望的晶片面积压力控制。

2. 发明授权

US06245192B1 Gas distribution apparatus for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配装置
公开(公告)号：US06245192B1
公开(公告)日：2001-06-12
申请号：US09343690
申请日：1999-06-30
申请人： Rajinder Dhindsa , Fangli Hao , Eric Lenz
发明人： Rajinder Dhindsa , Fangli Hao , Eric Lenz
IPC分类号： C23F102
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , H01J37/3244
摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.
摘要翻译：一种用于均匀或不均匀地分布气体跨越半导体衬底的表面的气体分配系统。气体分配系统包括固定在一起以在其间限定气体分配室的支撑板和喷头。包括一个或多个挡板的挡板组件位于气体分配室内。挡板装置包括向挡板室的中心部分供应处理气体的第一气体供应源和向挡板室的周边区域供应第二处理气体的第二气体供应源。因为在靠近第一和第二气体供应出口的位置处气体的压力较大，所以喷头背面的气体压力可以比单个气体供应的情况更均匀。在一种布置中，第一和第二气体供应开放在顶部挡板和温度控制的支撑构件之间的增压室中，其中气室通过O形环分成中心区域和外围区域。在第二种布置中，第一气体供应通向上挡板上方的中心区域，第二气体供应通道进入上挡板和下挡板之间的集气室的周边。

3. 发明授权

US06712929B1 Deformation reduction at the main chamber 有权
标题翻译：主室变形减少
公开(公告)号：US06712929B1
公开(公告)日：2004-03-30
申请号：US09634806
申请日：2000-08-08
申请人： Eric Lenz , Albert R. Ellingboe , Fangli Hao
发明人： Eric Lenz , Albert R. Ellingboe , Fangli Hao
IPC分类号： C23C1600
CPC分类号： H01L21/67069 , H01J37/32458
摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.
摘要翻译：提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。真空室具有第一部分相邻的主腔。真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。口袋与主腔流体连通。当在主腔中产生真空时，口袋中的压力也降低。结果，盖的第二部分通过袋中的真空而变形。然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

4. 发明授权

US06949204B1 Deformation reduction at the main chamber 有权
标题翻译：主室变形减少
公开(公告)号：US06949204B1
公开(公告)日：2005-09-27
申请号：US10771112
申请日：2004-02-02
申请人： Eric Lenz , Albert R. Ellingboe , Fangli Hao
发明人： Eric Lenz , Albert R. Ellingboe , Fangli Hao
IPC分类号： H01J37/32 , H01L21/00 , C23F1/00 , C23C16/00 , H01L31/306
CPC分类号： H01L21/67069 , H01J37/32458
摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.
摘要翻译：提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。真空室具有第一部分相邻的主腔。真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。口袋与主腔流体连通。当在主腔中产生真空时，口袋中的压力也降低。结果，盖的第二部分通过袋中的真空而变形。然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

5. 发明授权

US06432831B1 Gas distribution apparatus for semiconductor processing 有权
公开(公告)号：US06432831B1
公开(公告)日：2002-08-13
申请号：US09814972
申请日：2001-03-23
申请人： Rajinder Dhindsa , Fangli Hao , Eric Lenz
发明人： Rajinder Dhindsa , Fangli Hao , Eric Lenz
IPC分类号： H01L21302
摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

6. 发明申请

US20060032736A1 Deformation reduction at the main chamber 审中-公开
标题翻译：主室变形减少
公开(公告)号：US20060032736A1
公开(公告)日：2006-02-16
申请号：US11200886
申请日：2005-08-09
申请人： Eric Lenz , Albert Ellingboe , Fangli Hao
发明人： Eric Lenz , Albert Ellingboe , Fangli Hao
IPC分类号： C23C14/32
CPC分类号： H01J37/32082 , H01J37/32458
摘要： A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.
摘要翻译：提供具有盖的真空室，其具有在第一部分和第二部分之间的第一部分，第二部分和凹穴。真空室具有第一部分相邻的主腔。真空室可用于等离子体处理，其可能需要由第一部分支撑的关键元件。口袋与主腔流体连通。当在主腔中产生真空时，口袋中的压力也降低。结果，盖的第二部分通过袋中的真空而变形。然而，口袋中的真空有助于防止第一部分变形，为关键元件提供更好的支撑。

7. 发明授权

US09111724B2 Apparatus and method for controlling plasma potential 有权
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US09111724B2
公开(公告)日：2015-08-18
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01J7/24 , C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译：腔室包括下电极和上电极。下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。上电极设置在下电极的上方并与之隔开的关系。上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。上部电极的相邻部分通过电介质材料彼此电分离。多个电压源分别连接到上电极部分。每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。每个上电极部分的电位影响室内的等离子体的电位。

8. 发明授权

US08846539B2 Apparatus including showerhead electrode and heater for plasma processing 有权
标题翻译：装置包括用于等离子体处理的喷头电极和加热器
公开(公告)号：US08846539B2
公开(公告)日：2014-09-30
申请号：US12709892
申请日：2010-02-22
申请人： Rajinder Dhindsa , Eric Lenz
发明人： Rajinder Dhindsa , Eric Lenz
IPC分类号： H01L21/302 , B44C1/22 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/3244 , H01J37/32724
摘要： A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.
摘要翻译：等离子体处理装置包括与喷头电极热接触的加热器和与加热器热接触的温度控制的顶板，以在半导体衬底处理期间保持喷头电极的期望温度。气体分配构件向喷头电极提供处理气体和射频（RF）功率。

9. 发明申请

US20130084392A1 PREVENTION OF PARTICLE ADDERS WHEN CONTACTING A LIQUID MENISCUS OVER A SUBSTRATE 有权
标题翻译：在接触液体液体基板时防止颗粒添加剂
公开(公告)号：US20130084392A1
公开(公告)日：2013-04-04
申请号：US13250872
申请日：2011-09-30
申请人： Enrico Magni , Suresh Gupta , Mark Gahagan , Eric Lenz , Mike Ravkin
发明人： Enrico Magni , Suresh Gupta , Mark Gahagan , Eric Lenz , Mike Ravkin
IPC分类号： B05D5/00 , B05D1/26 , B05C11/00 , B05C5/00
CPC分类号： H01L21/67086 , B05C5/0254 , B05C11/1036 , B05C11/1039 , B05D3/002 , B05D3/104 , H01L21/6776 , Y10S134/902
摘要： A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate.
摘要翻译：提供了一种用于弯液面处理衬底的方法。该方法开始产生跨越衬底的至少一段长度的弯液面。分配预润湿液体或蒸汽。将基底移动通过分配的预润湿液体或蒸气和弯液面。分配的预润湿蒸汽将预润湿液体在基板的与生成弯月面的区域相邻的区域上冷凝。沉积预润湿液体而基本上不会在基底上产生预润湿液体的表面流，并且预润湿液体防止弯月面的前缘接触基底的干表面区域。

10. 发明申请

US20110024045A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024045A1
公开(公告)日：2011-02-03
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译：腔室包括下电极和上电极。下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。上电极设置在下电极的上方并与之隔开的关系。上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。上部电极的相邻部分通过电介质材料彼此电分离。多个电压源分别连接到上电极部分。每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。每个上电极部分的电位影响室内的等离子体的电位。

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