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1. 发明授权

US08723172B2 Display device, thin film transistor array substrate and thin film transistor having oxide semiconductor 有权
标题翻译：显示装置，薄膜晶体管阵列基板和具有氧化物半导体的薄膜晶体管
公开(公告)号：US08723172B2
公开(公告)日：2014-05-13
申请号：US12699058
申请日：2010-02-03
申请人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan , Tung-Liang Lin
发明人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan , Tung-Liang Lin
IPC分类号： H01L29/10 , H01L29/12 , H01L29/04 , H01L31/00 , H01L21/00 , H01L21/16
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.
摘要翻译：提供了包括薄膜晶体管阵列基板，透明电极基板和设置在其间的显示介质层的显示装置。薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。在每个薄膜晶体管中，栅极电极和栅极绝缘层依次设置在衬底上，并且栅电极被栅极绝缘层覆盖。氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。由于氧化物半导体层由透明材料制成，所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。因此，能够降低反射型显示装置的制造工序的成本和耗时。

2. 发明申请

US20110095285A1 Display Device and Thin Film Transistor Array Substrate and Thin Film Transistor thereof 有权
标题翻译：显示器件和薄膜晶体管阵列基板及其薄膜晶体管
公开(公告)号：US20110095285A1
公开(公告)日：2011-04-28
申请号：US12699058
申请日：2010-02-03
申请人： Fang-An SHU , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan , Tung-Liang Lin
发明人： Fang-An SHU , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan , Tung-Liang Lin
IPC分类号： H01L33/00 , H01L29/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.
摘要翻译：提供了包括薄膜晶体管阵列基板，透明电极基板和设置在其间的显示介质层的显示装置。薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。在每个薄膜晶体管中，栅极电极和栅极绝缘层依次设置在衬底上，并且栅电极被栅极绝缘层覆盖。氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。由于氧化物半导体层由透明材料制成，所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。因此，能够降低反射型显示装置的制造工序的成本和耗时。

3. 发明授权

US08242495B2 Digital X-ray detecting panel and method for manufacturing the same 有权
标题翻译：数字X射线检测面板及其制造方法
公开(公告)号：US08242495B2
公开(公告)日：2012-08-14
申请号：US12699033
申请日：2010-02-02
申请人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan
发明人： Fang-An Shu , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan
IPC分类号： H01L29/10 , H01L29/12 , H01L27/01 , H01L27/12
CPC分类号： H01L31/105 , H01L27/14659 , H01L31/1085 , H01L31/115
摘要： A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.
摘要翻译：数字X射线检测面板包括波长转换层和光电检测板。波长转换层被配置为将X射线转换成可见光。光电检测板设置在波长转换层的下方。光电检测板包括基板和设置在基板上并排列成阵列的多个光电检测单元。每个光电检测单元包括薄膜晶体管和与薄膜晶体管电连接的光电二极管。薄膜晶体管具有氧化物半导体层。数字X射线检测面板可以避免薄膜晶体管中的光电流，从而提高数字X射线检测面板的检测精度。还提供了一种用于制造数字X射线检测面板的方法。

4. 发明申请

US20110024739A1 Digital X-Ray Detecting Panel and Method for Manufacturing the same 有权
标题翻译：数字X射线检测面板及其制造方法
公开(公告)号：US20110024739A1
公开(公告)日：2011-02-03
申请号：US12699033
申请日：2010-02-02
申请人： Fang-An SHU , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan
发明人： Fang-An SHU , Lee-Tyng Chen , Henry Wang , Wei-Chou Lan
IPC分类号： H01L31/08 , H01L31/18
CPC分类号： H01L31/105 , H01L27/14659 , H01L31/1085 , H01L31/115
摘要： A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.
摘要翻译：数字X射线检测面板包括波长转换层和光电检测板。波长转换层被配置为将X射线转换成可见光。光电检测板设置在波长转换层的下方。光电检测板包括基板和设置在基板上并排列成阵列的多个光电检测单元。每个光电检测单元包括薄膜晶体管和与薄膜晶体管电连接的光电二极管。薄膜晶体管具有氧化物半导体层。数字X射线检测面板可以避免薄膜晶体管中的光电流，从而提高数字X射线检测面板的检测精度。还提供了一种用于制造数字X射线检测面板的方法。

5. 发明申请

US20090283808A1 Photo Sensor 审中-公开
标题翻译：照片传感器
公开(公告)号：US20090283808A1
公开(公告)日：2009-11-19
申请号：US12509562
申请日：2009-07-27
申请人： Henry Wang , Wei-Chou Lan , Lee-Tyng Chen
发明人： Henry Wang , Wei-Chou Lan , Lee-Tyng Chen
IPC分类号： H01L31/112
CPC分类号： H01L31/1055 , H01L31/03762
摘要： A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.
摘要翻译：光电传感器具有用于覆盖二极管叠层的绝缘体层，并且绝缘体层由光致抗蚀剂制成以减少侧漏电流。

6. 发明授权

US07582499B2 Photo sensor and a method for manufacturing thereof 有权
标题翻译：光传感器及其制造方法
公开(公告)号：US07582499B2
公开(公告)日：2009-09-01
申请号：US12122151
申请日：2008-05-16
申请人： Henry Wang , Wei-Chou Lan , Lee-Tyng Chen
发明人： Henry Wang , Wei-Chou Lan , Lee-Tyng Chen
IPC分类号： H01L21/00 , H01L21/8234 , H01L21/8222
CPC分类号： H01L31/1055 , H01L31/03762
摘要： A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.
摘要翻译：光电传感器具有用于覆盖二极管叠层的绝缘体层，并且绝缘体层由光致抗蚀剂制成以减少侧漏电流。

7. 发明申请

US20090085077A1 Photo Sensor and a Method for Manufacturing Thereof 有权
标题翻译：光传感器及其制造方法
公开(公告)号：US20090085077A1
公开(公告)日：2009-04-02
申请号：US12122151
申请日：2008-05-16
申请人： Henry Wang , Wei-Chou Lan , Lee-Tyng Chen
发明人： Henry Wang , Wei-Chou Lan , Lee-Tyng Chen
IPC分类号： H01L31/113 , H01L21/00 , H01L21/8236
CPC分类号： H01L31/1055 , H01L31/03762
摘要： A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of phtoresist to reduce a side leakage current.
摘要翻译：光电传感器具有用于覆盖二极管叠层的绝缘体层，并且绝缘体层由钝化膜制成以减少侧漏电流。

8. 发明申请

US20090085076A1 Photo Sensor and a Method for Manufacturing Thereof 审中-公开
标题翻译：光传感器及其制造方法
公开(公告)号：US20090085076A1
公开(公告)日：2009-04-02
申请号：US12115765
申请日：2008-05-06
申请人： Wei-Chou Lan , Henry Wang , Lee-Tyng Chen
发明人： Wei-Chou Lan , Henry Wang , Lee-Tyng Chen
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1443 , H01L29/78669 , H01L31/1055
摘要： According to a method of manufacturing photo sensor, a diode can be formed by one lithography step. In addition, the source/drain is arranged on a gate dielectric layer to avoid the conventional plug structure. Moreover, a diode stack is formed on one of the source/drain to simplify the structure of the photo sensor.
摘要翻译：根据制造光电传感器的方法，可以通过一个光刻步骤形成二极管。此外，源极/漏极被布置在栅极电介质层上以避免常规的插塞结构。此外，在源极/漏极之一上形成二极管叠层，以简化光电传感器的结构。

9. 发明申请

US20130175520A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20130175520A1
公开(公告)日：2013-07-11
申请号：US13611279
申请日：2012-09-12
申请人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
发明人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/4908
摘要： A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.
摘要翻译：提供了适合于设置在基板上的薄膜晶体管。薄膜晶体管包括栅电极，有机栅介质层，金属氧化物半导体层，源电极和漏电极。栅电极设置在基板上。有机栅极介电层设置在基板上以覆盖栅电极。源电极，漏电极和金属氧化物半导体层设置在有机栅极电介质层的上方，金属氧化物半导体层与源电极和漏电极接触。由于薄膜晶体管的沟道层是在较低温度下形成的金属氧化物半导体层，因此薄膜晶体管可以广泛地应用于诸如柔性显示器件的各种显示应用中。

10. 发明授权

US09165955B2 Array substrate and method for manufacturing the same 有权
标题翻译：阵列基板及其制造方法
公开(公告)号：US09165955B2
公开(公告)日：2015-10-20
申请号：US13530098
申请日：2012-06-21
申请人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
发明人： Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
IPC分类号： H01L33/08 , H01L27/12
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/47635 , H01L27/1218 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/24 , H01L29/4908 , H01L29/51 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.
摘要翻译：这里公开了一种阵列基板的制造方法。该方法包括在基板上形成源电极和漏电极。依次形成半导体层，有机绝缘层和栅电极层，以覆盖基板，源电极和漏电极。在栅电极层上形成图案化的光致抗蚀剂层。除去栅电极层的露出部分，有机绝缘层的一部分及其下面的半导体层的一部分，形成栅电极。在栅电极，源电极和漏电极上形成有机钝化层。有机钝化层具有暴露漏电极的一部分的接触窗口。在有机钝化层和漏电极的露出部分上形成像素电极。

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