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    • 1. 发明申请
    • Display Device and Thin Film Transistor Array Substrate and Thin Film Transistor thereof
    • 显示器件和薄膜晶体管阵列基板及其薄膜晶体管
    • US20110095285A1
    • 2011-04-28
    • US12699058
    • 2010-02-03
    • Fang-An SHULee-Tyng ChenHenry WangWei-Chou LanTung-Liang Lin
    • Fang-An SHULee-Tyng ChenHenry WangWei-Chou LanTung-Liang Lin
    • H01L33/00H01L29/12H01L29/786
    • H01L29/7869H01L27/1225
    • A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.
    • 提供了包括薄膜晶体管阵列基板,透明电极基板和设置在其间的显示介质层的显示装置。 薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。 在每个薄膜晶体管中,栅极电极和栅极绝缘层依次设置在衬底上,并且栅电极被栅极绝缘层覆盖。 氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。 每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。 由于氧化物半导体层由透明材料制成,所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。 因此,能够降低反射型显示装置的制造工序的成本和耗时。
    • 4. 发明授权
    • Display device, thin film transistor array substrate and thin film transistor having oxide semiconductor
    • 显示装置,薄膜​​晶体管阵列基板和具有氧化物半导体的薄膜晶体管
    • US08723172B2
    • 2014-05-13
    • US12699058
    • 2010-02-03
    • Fang-An ShuLee-Tyng ChenHenry WangWei-Chou LanTung-Liang Lin
    • Fang-An ShuLee-Tyng ChenHenry WangWei-Chou LanTung-Liang Lin
    • H01L29/10H01L29/12H01L29/04H01L31/00H01L21/00H01L21/16
    • H01L29/7869H01L27/1225
    • A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.
    • 提供了包括薄膜晶体管阵列基板,透明电极基板和设置在其间的显示介质层的显示装置。 薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。 在每个薄膜晶体管中,栅极电极和栅极绝缘层依次设置在衬底上,并且栅电极被栅极绝缘层覆盖。 氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。 每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。 由于氧化物半导体层由透明材料制成,所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。 因此,能够降低反射型显示装置的制造工序的成本和耗时。
    • 9. 发明授权
    • Catheter with a dual lumen monolithic shaft
    • 导管与双腔单片轴
    • US08684963B2
    • 2014-04-01
    • US13542129
    • 2012-07-05
    • Hua QiuTung-Liang Lin
    • Hua QiuTung-Liang Lin
    • A61M29/00
    • A61M25/1025A61M25/0009A61M25/0026A61M25/0032A61M25/0045A61M25/10A61M2025/0183A61M2025/1061
    • Multi-lumen catheter having a monolithic elongate tubular shaft member having a proximal end, a distal end and a longitudinal length therebetween. The tubular shaft member has an outer cross-sectional dimension that varies along the length of the tubular shaft member. The tubular shaft member has an inner core made of a first material and an outer layer made of a second material. The inner core has a first lumen and a second lumen defined therein, the first lumen having a first lumen cross-section and a length extending at least along a portion of the length of the tubular shaft member. The first lumen cross-section is substantially uniform along the length of the first lumen. The second lumen has a second lumen cross-section and a length extending along the length of tubular shaft member. The second lumen cross-section is substantially uniform along the length of the second lumen.
    • 具有整体式细长管状轴构件的多腔导管具有近端,远端和其间的纵向长度。 管状轴构件具有沿管状轴构件的长度变化的外侧横截面尺寸。 管状轴构件具有由第一材料制成的内芯和由第二材料制成的外层。 内芯具有限定在其中的第一内腔和第二腔,第一腔具有第一内腔横截面和至少沿着管状轴构件的长度的一部分延伸的长度。 第一管腔横截面沿着第一管腔的长度基本均匀。 第二腔具有第二管腔横截面和沿着管状轴构件的长度延伸的长度。 第二管腔横截面沿第二内腔的长度基本均匀。