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    • 1. 发明授权
    • Display device, thin film transistor array substrate and thin film transistor having oxide semiconductor
    • 显示装置,薄膜​​晶体管阵列基板和具有氧化物半导体的薄膜晶体管
    • US08723172B2
    • 2014-05-13
    • US12699058
    • 2010-02-03
    • Fang-An ShuLee-Tyng ChenHenry WangWei-Chou LanTung-Liang Lin
    • Fang-An ShuLee-Tyng ChenHenry WangWei-Chou LanTung-Liang Lin
    • H01L29/10H01L29/12H01L29/04H01L31/00H01L21/00H01L21/16
    • H01L29/7869H01L27/1225
    • A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.
    • 提供了包括薄膜晶体管阵列基板,透明电极基板和设置在其间的显示介质层的显示装置。 薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。 在每个薄膜晶体管中,栅极电极和栅极绝缘层依次设置在衬底上,并且栅电极被栅极绝缘层覆盖。 氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。 每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。 由于氧化物半导体层由透明材料制成,所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。 因此,能够降低反射型显示装置的制造工序的成本和耗时。
    • 3. 发明申请
    • SIGNAL LINE STRUCTURE OF A FLAT DISPLAY
    • 平面显示器的信号线结构
    • US20120256316A1
    • 2012-10-11
    • US13166826
    • 2011-06-23
    • Wei-Chou LANSung-Hui HUANGChia-Chun YEHTed-Hong SHINN
    • Wei-Chou LANSung-Hui HUANGChia-Chun YEHTed-Hong SHINN
    • H01L29/43
    • G02F1/136286G02F2001/13629G09G3/20G09G2300/0421H01L27/124
    • The signal line structure is disposed between a gate driver and a display area of a display. The signal line structure includes a substrate, first metal layers, a first insulation layer, second metal layers, a second insulation layer and third metal layers. The first metal layers are arranged in parallel and toward a first direction in the substrate. The first insulation layer is disposed in the substrate and covers the first metal layers. The second metal layers are disposed on the positions of the first insulation layer corresponding to the first metal layers. The second insulation layer is disposed on the second metal layers and the first insulation layer. The third metal layers are disposed on the positions corresponding to the second metal layers in the second insulation layer. The distance between two adjacent second metal layers is less than that between two adjacent first metal layers.
    • 信号线结构设置在显示器的栅极驱动器和显示区域之间。 信号线结构包括基板,第一金属层,第一绝缘层,第二金属层,第二绝缘层和第三金属层。 第一金属层在基板中平行且朝向第一方向排列。 第一绝缘层设置在基板中并覆盖第一金属层。 第二金属层设置在对应于第一金属层的第一绝缘层的位置上。 第二绝缘层设置在第二金属层和第一绝缘层上。 第三金属层设置在与第二绝缘层中的第二金属层对应的位置上。 两个相邻的第二金属层之间的距离小于两个相邻的第一金属层之间的距离。
    • 5. 发明申请
    • THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
    • 薄膜晶体管阵列基板及其制造方法
    • US20110278563A1
    • 2011-11-17
    • US12838107
    • 2010-07-16
    • SUNG-HUI HUANGWei-Chou LanTed-Hong Shinn
    • SUNG-HUI HUANGWei-Chou LanTed-Hong Shinn
    • H01L27/12H01L21/84H01L21/34H01L29/786
    • H01L27/1225
    • A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer and a pixel electrode. The gate layer is disposed on the substrate. The gate insulating layer is disposed on the gate layer and the substrate. The source/drain layer is disposed on the gate insulating layer. The patterned protective layer is disposed on the source/drain layer and exposes a portion of the source/drain layer. The oxide semiconductor layer is disposed on the patterned protective layer and electrically connected to the source/drain layer. The resin layer is disposed on the oxide semiconductor layer and covers the oxide semiconductor layer. The pixel electrode is disposed on the resin layer and connects to the source/drain layer. The present invention also provides a method for making the thin film transistor array substrate. The thin film transistor array substrate can prevent leakage current.
    • 薄膜晶体管阵列基板包括基板,栅极层,栅极绝缘层,源极/漏极层,图案化保护层,氧化物半导体层,树脂层和像素电极。 栅极层设置在基板上。 栅极绝缘层设置在栅极层和基板上。 源极/漏极层设置在栅极绝缘层上。 图案化的保护层设置在源极/漏极层上并暴露源极/漏极层的一部分。 氧化物半导体层设置在图案化的保护层上并电连接到源极/漏极层。 树脂层设置在氧化物半导体层上并覆盖氧化物半导体层。 像素电极设置在树脂层上并连接到源极/漏极层。 本发明还提供了制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板可以防止漏电流。
    • 6. 发明申请
    • DRIVING MEMBERAND DRIVING MEMBER ARRAY MODULE
    • 驱动组件驱动组件阵列模块
    • US20110187765A1
    • 2011-08-04
    • US12869130
    • 2010-08-26
    • Sung-Hui HuangWei-Chou LanSan-Long Lin
    • Sung-Hui HuangWei-Chou LanSan-Long Lin
    • G09G5/02H01H59/00
    • G09G5/02H01H59/00
    • An exemplary driving member and an exemplary array module formed by a plurality of the driving members are disclosed in the invention. The driving member includes a first suspending beam module, a second suspending beam module and a conductive suspending beam module. When a voltage is provided between the first suspending beam module and the second suspending beam module, or the first suspending beam module and the second suspending beam module are provided with two homopolar voltages, when the electric field force is larger than the deforming force threshold of the first suspending beam, the first suspending beam moves to contact with the conductive suspending beam module, so that the first suspending beam has a voltage same with the conductive suspending beam module. When the electric field force is smaller than the deforming force threshold of the first suspending beam, the first suspending beam module rebounds to an original state.
    • 在本发明中公开了由多个驱动构件形成的示例性驱动构件和示例性阵列模块。 驱动构件包括第一悬挂梁模块,第二悬挂梁模块和导电悬挂梁模块。 当在第一悬挂梁模块和第二悬挂梁模块之间提供电压时,或者第一悬挂梁模块和第二悬挂梁模块设置有两个单极电压时,当电场力大于变形力阈值 第一悬挂梁,第一悬挂梁移动以与导电悬挂梁模块接触,使得第一悬挂梁具有与导电悬挂梁模块相同的电压。 当电场力小于第一悬吊梁的变形力阈值时,第一悬挂梁模块反弹到原始状态。
    • 8. 发明申请
    • Electronic ink display device
    • 电子油墨显示装置
    • US20070108445A1
    • 2007-05-17
    • US11336481
    • 2006-01-19
    • Wei-Chou LanChun-Ming HuangMing-Sheng Chiang
    • Wei-Chou LanChun-Ming HuangMing-Sheng Chiang
    • H01L29/04
    • H01L27/1214G02F1/136227G02F1/167H01L29/78645
    • An electronic ink display device with a frontplane laminate and a TFT array substrate is provided. In the TFT array substrate, a first metal layer and a dielectric layer are disposed on a first substrate. The dielectric layer covers the first metal layer. A second metal layer is disposed on the dielectric layer. The first metal layer includes scan lines and gates, and the second metal layer includes data lines and sources/drains. The first substrate is divided into multiple pixel areas by the data lines and the scan lines. The gates and the sources/drains are disposed inside the pixel areas. A channel layer is disposed on the dielectric layer between the gates and the sources/drains. Pixel electrodes are disposed inside the pixel areas and connected to the drains. An electronic ink material layer of the frontplane laminate is disposed between a transparent electrode layer and the TFT array substrate.
    • 提供一种具有前板层叠体和TFT阵列基板的电子墨水显示装置。 在TFT阵列基板中,第一金属层和电介质层设置在第一基板上。 电介质层覆盖第一金属层。 第二金属层设置在电介质层上。 第一金属层包括扫描线和栅极,第二金属层包括数据线和源极/漏极。 第一衬底被数据线和扫描线分成多个像素区域。 门和源/排水口设置在像素区域内。 沟道层设置在栅极和源极/漏极之间的介电层上。 像素电极设置在像素区域内并连接到排水口。 在透明电极层和TFT阵列基板之间配置有前面板层叠体的电子墨水层。
    • 9. 发明授权
    • Metal contact structure and method for thin film transistor array in liquid crystal display
    • 液晶显示器薄膜晶体管阵列的金属接触结构及方法
    • US06757031B2
    • 2004-06-29
    • US09780774
    • 2001-02-09
    • Wen-Jian LinWei-Chou Lan
    • Wen-Jian LinWei-Chou Lan
    • G02F11343
    • H01L29/66765G02F1/1368H01L29/41733H01L29/458
    • Disclosed is a metal contact structure and method for a thin film transistor array in liquid crystal display in order to prevent source/drain electrode metal layer from plasma damage and oxide insulator formation thereon during contact hole process, such that low contact resistance is obtained between the source/drain electrode metal layer and top-ITO conductive layer, wherein a thin film transistor structure is formed on a substrate and a metal oxide conductive film is covered on the source/drain electrode metal layer of the thin film transistor structure before an insulative passivation layer is deposited over the thin film transistor structure. During the passivation layer is etched to form contact hole for the source/drain electrode metal layer to contact with the top-ITO conductive layer thereafter formed, the metal oxide conductive film prevents the underlying source/drain electrode metal layer from plasma damage and oxide insulator formation thereon, thereby obtaining good contact between the source/drain electrode metal layer and the top-ITO conductive layer.
    • 公开了一种用于在液晶显示器中的薄膜晶体管阵列的金属接触结构和方法,以便在接触孔处理期间防止源极/漏极电极金属层等离子体损伤和其上形成氧化物绝缘体,从而在接触孔处理之间获得低的接触电阻 源极/漏极电极金属层和顶部ITO导电层,其中在基板上形成薄膜晶体管结构,并且在绝缘钝化之前,在薄膜晶体管结构的源极/漏极金属层上覆盖金属氧化物导电膜 层沉积在薄膜晶体管结构上。 在钝化层被蚀刻以形成用于源极/漏极金属层与其后形成的顶部ITO导电层接触的接触孔时,金属氧化物导电膜防止下面的源极/漏极金属层受到等离子体损伤和氧化物绝缘体 从而在源极/漏极金属层和顶部ITO导电层之间获得良好的接触。
    • 10. 发明授权
    • Signal line structure of a flat display
    • 平面显示器的信号线结构
    • US09182641B2
    • 2015-11-10
    • US13166826
    • 2011-06-23
    • Wei-Chou LanSung-Hui HuangChia-Chun YehTed-Hong Shinn
    • Wei-Chou LanSung-Hui HuangChia-Chun YehTed-Hong Shinn
    • H01L23/48H01L23/52H01L29/40G02F1/1362G09G3/20H01L27/12
    • G02F1/136286G02F2001/13629G09G3/20G09G2300/0421H01L27/124
    • The signal line structure is disposed between a gate driver and a display area of a display. The signal line structure includes a substrate, first metal layers, a first insulation layer, second metal layers, a second insulation layer and third metal layers. The first metal layers are arranged in parallel and toward a first direction in the substrate. The first insulation layer is disposed in the substrate and covers the first metal layers. The second metal layers are disposed on the positions of the first insulation layer corresponding to the first metal layers. The second insulation layer is disposed on the second metal layers and the first insulation layer. The third metal layers are disposed on the positions corresponding to the second metal layers in the second insulation layer. The distance between two adjacent second metal layers is less than that between two adjacent first metal layers.
    • 信号线结构设置在显示器的栅极驱动器和显示区域之间。 信号线结构包括基板,第一金属层,第一绝缘层,第二金属层,第二绝缘层和第三金属层。 第一金属层在基板中平行且朝向第一方向排列。 第一绝缘层设置在基板中并覆盖第一金属层。 第二金属层设置在对应于第一金属层的第一绝缘层的位置上。 第二绝缘层设置在第二金属层和第一绝缘层上。 第三金属层设置在与第二绝缘层中的第二金属层对应的位置上。 两个相邻的第二金属层之间的距离小于两个相邻的第一金属层之间的距离。