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1. 发明申请

US20110114177A1 MIXED SILICON PHASE FILM FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS 审中-公开
标题翻译：用于高效薄膜硅太阳能电池的混合硅胶片
公开(公告)号：US20110114177A1
公开(公告)日：2011-05-19
申请号：US12838861
申请日：2010-07-19
申请人： Fan Yang , Lin Zhang , Yi Zheng , Francimar Schmitt , Zheng Yuan
发明人： Fan Yang , Lin Zhang , Yi Zheng , Francimar Schmitt , Zheng Yuan
IPC分类号： H01L31/0264 , H01L31/0376 , H01L31/20
CPC分类号： H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.
摘要翻译：提供一种用于形成太阳能电池的方法和装置。在一个实施例中，光伏器件包括形成在衬底上的第一pin结单元，其中该pin结单元包括p型含硅层，在p型含硅层上形成本征型含硅层，以及在本征型含硅层上形成n型含硅层，其中本征型含硅层包括第一对微晶层和非晶硅层。

2. 发明申请

US20110171774A1 CLEANING OPTIMIZATION OF PECVD SOLAR FILMS 审中-公开
标题翻译： PECVD太阳能膜的清洁优化
公开(公告)号：US20110171774A1
公开(公告)日：2011-07-14
申请号：US12967648
申请日：2010-12-14
申请人： Francimar C. Schmitt , Zheng Yuan , Yi Zheng , Fan Yang , Lipan Li
发明人： Francimar C. Schmitt , Zheng Yuan , Yi Zheng , Fan Yang , Lipan Li
IPC分类号： H01L31/0376
CPC分类号： H01L31/03921 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , H01L31/1816 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide a method for forming a plurality of thin film single or multi-junction solar cell in a substrate processing chamber. In one embodiment, a method for processing a plurality of thin film solar cell substrates includes depositing sequentially a first undoped layer and a first doped layer over a surface of a first substrate and a chamber component in a single processing chamber, removing the substrate having the doped and undoped layers from the processing chamber, removing the second doped layer deposited on the chamber component to expose underlying first undoped layer which serves as a seasoning layer for a second substrate to be processed in the processing chamber, and depositing sequentially a second undoped layer and a second doped layer on the second substrate in the processing chamber. In one example, the first undoped layer is amorphous silicon or microcrystalline silicon. A full cleaning process may be performed at desired intervals to expose the surfaces of the chamber component before a regular seasoning process and the subsequent depositions are proceeded in the processing chamber.
摘要翻译：本发明的实施方案通常提供在基板处理室中形成多个薄膜单结或多结太阳能电池的方法。在一个实施例中，一种用于处理多个薄膜太阳能电池基板的方法包括在单个处理室中顺序地在第一基板和室部件的表面上沉积第一未掺杂层和第一掺杂层，去除具有去除来自处理室的掺杂和未掺杂的层，去除沉积在室组件上的第二掺杂层，以暴露下面的第一未掺杂层，其用作待处理室中待处理的第二衬底的调味层，以及顺序地沉积第二未掺杂层以及处理室中的第二衬底上的第二掺杂层。在一个示例中，第一未掺杂层是非晶硅或微晶硅。可以以期望的间隔进行全部清洁处理，以在经常的调味过程之前露出室部件的表面，并且随后的沉积在处理室中进行。

3. 发明申请

US20120171852A1 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
标题翻译：含有薄膜沉积的硅离子等离子体源
公开(公告)号：US20120171852A1
公开(公告)日：2012-07-05
申请号：US13266978
申请日：2010-08-02
申请人： Zheng Yuan , Mandar B. Pandit , Francimar C. Schmitt , Yi Zheng , Fan Yang , Lipan Li , Alan Tso , Dustin W. Ho , Tom K. Cho , Randhir Thakur
发明人： Zheng Yuan , Mandar B. Pandit , Francimar C. Schmitt , Yi Zheng , Fan Yang , Lipan Li , Alan Tso , Dustin W. Ho , Tom K. Cho , Randhir Thakur
IPC分类号： H01L21/20 , C23C16/50
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , C23C16/505 , H01J37/32357 , H01J37/32449 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译：提供了在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。在一个实施例中，在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，其耦合到处理室，向处理室施加小于17.5mW / cm 2的RF功率，并在基板上形成含硅层。

4. 发明申请

US20130004681A1 MINI BLOCKER PLATE WITH STANDOFF SPACERS 审中-公开
标题翻译：迷你防撞板与标准间隔
公开(公告)号：US20130004681A1
公开(公告)日：2013-01-03
申请号：US13174690
申请日：2011-06-30
申请人： Alan Tso , Jeonghoon Oh , Yi Zheng , Tom K. Cho , Zheng Yuan , Lin Zhang , Qunhua Wang , Robin L. Tiner
发明人： Alan Tso , Jeonghoon Oh , Yi Zheng , Tom K. Cho , Zheng Yuan , Lin Zhang , Qunhua Wang , Robin L. Tiner
IPC分类号： C23C16/50 , F24H9/12
CPC分类号： C23C16/45565
摘要： Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate.
摘要翻译：本发明的实施例提供了一种等离子体处理室，其具有用于将处理气体输送到处理室的微型封隔板以及使用迷你封隔板来提高均匀性的方法。阻挡板组件包括具有多个通孔的迷你阻塞板，以及两个或更多个支架间隔件，其构造成将迷你阻挡板定位成远离阻挡板。

5. 发明授权

US07611996B2 Multi-stage curing of low K nano-porous films 有权
标题翻译：低K纳米多孔膜的多阶段固化
公开(公告)号：US07611996B2
公开(公告)日：2009-11-03
申请号：US11085416
申请日：2005-03-21
申请人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Sub Yim , Sang H. Ahn , Lester A. D'Cruz , Dustin W. Ho , Alexandros T. Demos , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

6. 发明申请

US20080099920A1 MULTI-STAGE CURING OF LOW K NANO-POROUS FILMS 审中-公开
标题翻译：低K纳米多孔膜的多段固化
公开(公告)号：US20080099920A1
公开(公告)日：2008-05-01
申请号：US11876668
申请日：2007-10-22
申请人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
IPC分类号： H01L23/538 , B32B3/00
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

7. 发明申请

US20050230834A1 Multi-stage curing of low K nano-porous films 有权
标题翻译：低K纳米多孔膜的多阶段固化
公开(公告)号：US20050230834A1
公开(公告)日：2005-10-20
申请号：US11085416
申请日：2005-03-21
申请人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
IPC分类号： C23C16/40 , C23C16/50 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/469 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

8. 发明申请

US20110151676A1 METHODS OF THIN FILM PROCESS 审中-公开
标题翻译：薄膜工艺方法
公开(公告)号：US20110151676A1
公开(公告)日：2011-06-23
申请号：US13039724
申请日：2011-03-03
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/31
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

9. 发明申请

US20080182382A1 METHODS OF THIN FILM PROCESS 有权
标题翻译：薄膜工艺方法
公开(公告)号：US20080182382A1
公开(公告)日：2008-07-31
申请号：US11947674
申请日：2007-11-29
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/762
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

10. 发明授权

US07939422B2 Methods of thin film process 有权
标题翻译：薄膜工艺方法
公开(公告)号：US07939422B2
公开(公告)日：2011-05-10
申请号：US11947674
申请日：2007-11-29
申请人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
发明人： Nitin K. Ingle , Jing Tang , Yi Zheng , Zheng Yuan , Zhenbin Ge , Xinliang Lu , Chien-Teh Kao , Vikash Banthia , William H. McClintock , Mei Chang
IPC分类号： H01L21/76
CPC分类号： H01L21/67253 , H01L21/02164 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/76232
摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.
摘要翻译：一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。第一电介质层形成在特征上并且在至少一个空间内。第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。第一固体产物被分解以基本上除去第一介电层的部分。形成第二电介质层以基本上填充至少一个空间。

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