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1. 发明申请

US20060144334A1 Method and apparatus for deposition of low dielectric constant materials 审中-公开
公开(公告)号：US20060144334A1
公开(公告)日：2006-07-06
申请号：US11369689
申请日：2006-03-07
申请人： Kang Yim , Soovo Sen , Dian Sugiarto , Peter Lee , Ellie Yieh
发明人： Kang Yim , Soovo Sen , Dian Sugiarto , Peter Lee , Ellie Yieh
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/3244
摘要： A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

2. 发明申请

US20050153073A1 Method for forming ultra low k films using electron beam 失效
标题翻译：使用电子束形成超低k膜的方法
公开(公告)号：US20050153073A1
公开(公告)日：2005-07-14
申请号：US11076181
申请日：2005-03-09
申请人： Yi Zheng , Srinivas Nemani , Li-Qun Xia , Eric Hollar , Kang Yim
发明人： Yi Zheng , Srinivas Nemani , Li-Qun Xia , Eric Hollar , Kang Yim
IPC分类号： B05D3/06 , B05D7/24 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/312 , C23C16/00 , H01L29/76
CPC分类号： C23C16/401 , B05D1/60 , B05D3/068 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31058 , H01L21/3121 , H01L21/3122 , H01L21/3125 , H01L21/7681
摘要： The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.
摘要翻译：本发明通常提供使用电子束处理沉积低介电常数膜的方法。在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面组在基板表面上。该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

3. 发明申请

US20060246737A1 NEW LOW DIELECTRIC (LOW K) BARRIER FILMS WITH OXYGEN DOPING BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) 失效
标题翻译：通过等离子体增强化学蒸气沉积（PECVD）进行氧化的新型低介电（低K）阻挡膜
公开(公告)号：US20060246737A1
公开(公告)日：2006-11-02
申请号：US11426141
申请日：2006-06-23
申请人： Kang Yim , Melissa Tam , Dian Sugiarto , Chi-I Lang , Peter Lee , Li-Qun Xia
发明人： Kang Yim , Melissa Tam , Dian Sugiarto , Chi-I Lang , Peter Lee , Li-Qun Xia
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/325 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L21/76807 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
摘要翻译：提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。还提供了沉积氧掺杂的碳化硅阻挡层的方法。可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

4. 发明申请

US20060154493A1 Method for producing gate stack sidewall spacers 有权
标题翻译：栅堆叠侧墙的制造方法
公开(公告)号：US20060154493A1
公开(公告)日：2006-07-13
申请号：US11032859
申请日：2005-01-10
申请人： Reza Arghavani , Michael Kwan , Li-Qun Xia , Kang Yim
发明人： Reza Arghavani , Michael Kwan , Li-Qun Xia , Kang Yim
IPC分类号： H01L21/8242
CPC分类号： H01L29/4983 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/02329 , H01L21/0234 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L29/6659
摘要： A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materials may be silicon carbide, oxygen doped silicon carbide, nitrogen doped silicon carbide, carbon doped silicon nitride, nitrogen doped silicon oxycarbide, or combinations thereof. The deposition is performed in a plasma enhanced chemical vapor deposition chamber and the deposition temperature is less than 450° C. The sidewall spacers so produced provide good capacity resistance, as well as excellent structural stability and hermeticity.
摘要翻译：一种用于在栅极堆叠上形成侧壁间隔物的方法，其通过在栅极结构上使用PECVD工艺沉积一层或多层含硅材料以产生具有约3.0至约5.0的总k值的间隔物。含硅材料可以是碳化硅，氧掺杂碳化硅，氮掺杂碳化硅，碳掺杂氮化硅，氮掺杂碳氧化碳或其组合。沉积在等离子体增强化学气相沉积室中进行，并且沉积温度低于450℃。如此制备的侧壁间隔物提供了良好的容量阻力以及良好的结构稳定性和气密性。

5. 发明申请

US20050282404A1 Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor deposition 失效
标题翻译：通过等离子体增强的化学气相沉积在低k膜上形成密封盖层
公开(公告)号：US20050282404A1
公开(公告)日：2005-12-22
申请号：US10873811
申请日：2004-06-21
申请人： Vu Ngoc Nguyen , Bok Kim , Kang Yim
发明人： Vu Ngoc Nguyen , Bok Kim , Kang Yim
IPC分类号： H01L21/027 , H01L21/31 , H01L21/316 , H01L21/469 , H01L21/768
CPC分类号： H01L21/76831 , H01L21/02164 , H01L21/02274 , H01L21/02315 , H01L21/0276 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L21/76829
摘要： A method of forming a cap layer over a dielectric layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.
摘要翻译：一种在衬底上的介电层上形成覆盖层的方法，包括由包括氧和四乙氧基硅烷在内的工艺气体形成等离子体，以及将所述覆盖层沉积在所述电介质层上，其中所述覆盖层包含约600或更小的厚度，压缩应力为200MPa以上。另外，在衬底上的电介质层上形成覆盖层的方法，包括通过将约200mgm至约8000mgm的四乙氧基硅烷流动而形成工艺气体，约2000至约200sccm的氧（O 2） SUB>）和约2000sccm至约20000sccm的载气，从处理气体产生等离子体，其中一个或多个RF发生器为等离子体提供约50瓦到约100瓦的低频RF功率，并且约100 瓦特到等离子体的大约600瓦的高频RF功率，并且将覆盖层沉积在电介质层上。

6. 发明申请

US20050130440A1 Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD) 有权
标题翻译：通过等离子体增强化学气相沉积（PECVD）的氧掺杂的低介电（低k）阻挡膜
公开(公告)号：US20050130440A1
公开(公告)日：2005-06-16
申请号：US11021319
申请日：2004-12-22
申请人： Kang Yim , Melissa Tam , Dian Sugiarto , Chi-I Lang , Peter Lee , Li-Qun Xia
发明人： Kang Yim , Melissa Tam , Dian Sugiarto , Chi-I Lang , Peter Lee , Li-Qun Xia
IPC分类号： C23C16/30 , C23C16/40 , C23C16/56 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L21/336 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/325 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L21/76807 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.
摘要翻译：提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。还提供了沉积氧掺杂的碳化硅阻挡层的方法。可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

7. 发明申请

US20080099920A1 MULTI-STAGE CURING OF LOW K NANO-POROUS FILMS 审中-公开
标题翻译：低K纳米多孔膜的多段固化
公开(公告)号：US20080099920A1
公开(公告)日：2008-05-01
申请号：US11876668
申请日：2007-10-22
申请人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
IPC分类号： H01L23/538 , B32B3/00
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

8. 发明申请

US20060219174A1 HERMETIC CAP LAYERS FORMED ON LOW-K FILMS BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权
标题翻译：通过等离子体增强化学气相沉积在低K膜上形成的掩蔽层
公开(公告)号：US20060219174A1
公开(公告)日：2006-10-05
申请号：US11423586
申请日：2006-06-12
申请人： Vu Nguyen , Bok Kim , Kang Yim
发明人： Vu Nguyen , Bok Kim , Kang Yim
IPC分类号： C23C16/00
CPC分类号： H01L21/76831 , H01L21/02164 , H01L21/02274 , H01L21/02315 , H01L21/0276 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L21/76829
摘要： A method of forming a cap layer over a dielectric layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.
摘要翻译：一种在衬底上的介电层上形成覆盖层的方法，包括由包括氧和四乙氧基硅烷在内的工艺气体形成等离子体，以及将所述覆盖层沉积在所述电介质层上，其中所述覆盖层包含约600或更小的厚度，压缩应力为200MPa以上。另外，在衬底上的电介质层上形成覆盖层的方法，包括通过将约200mgm至约8000mgm的四乙氧基硅烷流动而形成工艺气体，约2000至约200sccm的氧（O 2） SUB>）和约2000sccm至约20000sccm的载气，从处理气体产生等离子体，其中一个或多个RF发生器为等离子体提供约50瓦到约100瓦的低频RF功率，并且约100 瓦特到等离子体的大约600瓦的高频RF功率，并且将覆盖层沉积在电介质层上。

9. 发明申请

US20060043591A1 Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD) 有权
标题翻译：通过等离子体增强化学气相沉积（PECVD）生产具有低应力的低K电介质的低温工艺
公开(公告)号：US20060043591A1
公开(公告)日：2006-03-02
申请号：US11149826
申请日：2005-06-10
申请人： Kang Yim , Lihua Huang , Francimar Schmitt , Li-Qun Xia
发明人： Kang Yim , Lihua Huang , Francimar Schmitt , Li-Qun Xia
IPC分类号： H01L23/48 , H01L21/469
CPC分类号： H01L21/02126 , C23C16/401 , C23C16/56 , H01L21/02203 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/31633 , H01L21/31695 , H01L21/76802 , H01L21/76811 , H01L21/76835
摘要： Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low temperatures (300° C. or less). In accordance with another embodiment, as-deposited carbon containing silicon oxide films incorporate a porogen whose subsequent liberation reduces film stress.
摘要翻译：可以使用根据本发明的各种技术来形成表现出低机械应力的低K电介质膜。在一个实施方案中，通过在低温（300℃或更低）下的等离子体辅助化学气相沉积形成含碳氧化硅膜。根据另一个实施方案，沉积的含碳氧化硅膜含有致孔剂，其随后的释放降低膜应力。

10. 发明申请

US20050230834A1 Multi-stage curing of low K nano-porous films 有权
标题翻译：低K纳米多孔膜的多阶段固化
公开(公告)号：US20050230834A1
公开(公告)日：2005-10-20
申请号：US11085416
申请日：2005-03-21
申请人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
发明人： Francimar Schmitt , Yi Zheng , Kang Yim , Sang Ahn , Lester D'Cruz , Dustin Ho , Alexandros Demos , Li-Qun Xia , Derek Witty , Hichem M'Saad
IPC分类号： C23C16/40 , C23C16/50 , C23C16/56 , H01L21/3105 , H01L21/312 , H01L21/316 , H01L21/469 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

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