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1. 发明公开

EP3035057A4 SILICA PARTICLES HAVING REACTIVE FUNCTIONAL GROUP ON SURFACE, AND METHOD FOR PRODUCING THE SAME 失效
标题翻译：与其制造表面与方法的反应性官能团二氧化硅粒子
公开(公告)号：EP3035057A4
公开(公告)日：2017-04-12
申请号：EP14836946
申请日：2014-08-08
申请人： FURUKAWA ELECTRIC CO LTD
发明人： NISHIDA MASATAKA , YAMANAKA NOBUMITSU , MIYOSHI KAZUTOMI , OHKUBO MICHIO
IPC分类号： G01N33/552 , C09K11/06 , G01N33/543
CPC分类号： G01N33/552 , G01N33/54353 , G01N33/582
摘要： Silica particles having a thiol group on a surface thereof, and satisfying the following conditions (a) to (c): (a) a particle diameter is 20 to 1,000 nm; (b) a density of the thiol group on the surface of the silica particles is 0.002 to 0.2 piece/nm 2 ; and (c) a ratio (B/A) in terms of an amount B (piece/particle) of the thiol group existing on the surface of the silica particles to an amount A of sulfur elements in the silica particles (the number of sulfur elements derived from thiol per silica particle) is 0.10 to 0.60.

2. 发明公开

EP2952895A4 METHOD OF PRODUCING LABELED ANTIBODY 失效
标题翻译：用于生产标记抗体
公开(公告)号：EP2952895A4
公开(公告)日：2016-10-12
申请号：EP14746846
申请日：2014-01-29
申请人： FURUKAWA ELECTRIC CO LTD
发明人： YAMANAKA NOBUMITSU , AIZAWA HIDEKI , OHKUBO MICHIO , MIYOSHI KAZUTOMI
IPC分类号： G01N33/533 , G01N33/532 , G01N33/543 , G01N33/552
CPC分类号： G01N33/533 , G01N33/532 , G01N33/54346 , G01N33/54353 , G01N33/552 , Y10T428/2982
摘要： A method of producing a labeled antibody, including the steps of: a) allowing silica nanoparticles containing a functional molecule and having a thiol group on a surface thereof, and a linker molecule containing a maleimido group and an amino group to coexist in a solvent to form a thioether bond between the thiol group and the maleimido group, thereby obtaining functional molecule-containing silica nanoparticles on which the linker molecule is bonded; and b) allowing the functional molecule-containing silica nanoparticles on which the linker molecule is bonded, carbodiimide and an antibody to coexist in an aqueous solvent to form an amide bond between the amino group of the linker molecule and a carboxyl group of the antibody.

3. 发明专利

JPH08138901A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH08138901A
公开(公告)日：1996-05-31
申请号：JP27407994
申请日：1994-11-08
申请人： FURUKAWA ELECTRIC CO LTD
发明人： YOKOUCHI NORIYUKI , YAMANAKA NOBUMITSU , KASUKAWA AKIHIKO
IPC分类号： H01C3/18 , H01S5/34 , H01S5/343
摘要： PURPOSE: To obtain low and stabilized threshold characteristics by a method wherein specific tensile strain is given to the quantum well layer of a GaInAsP quantum well active layer. CONSTITUTION: An n-InP clad layer 2 is formed on an n-InP substrate 1, and a light-confinement layer 3 is formed on the upper side and the lower side of a GaInAsP single quantum well active layer 4. Then, a p-InP clad layer 5 and a p-GaInAs contact layer 6 are formed, an n-side electrode 7 and p-side electrode 8 are formed respectively, and a quantum well semiconductor laser is manufactured. At this point, the amount of tensile strain of the GaInAsP tingle well active layer 4 of the quantum well semiconductor laser is set at 1 to 1.5%. As a result, the title semiconductor laser element can be operated at low threshold value current density.

4. 发明专利

JPH01111397A FLEXIBLE PRINTED CIRCUIT BOARD 失效
公开(公告)号：JPH01111397A
公开(公告)日：1989-04-28
申请号：JP26832687
申请日：1987-10-26
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KUMAZAWA KINYA , KOMATSU MASAYA , YAMANAKA NOBUMITSU , SEKI OSAMU
IPC分类号： H05K1/03 , B32B15/08 , B32B15/082
摘要： PURPOSE:To obtain an excellent high-frequency characteristic by a method wherein a plasma polymerization film of a fluorine-based resin whose thickness is prescribed is formed on a fluorine-based resin board. CONSTITUTION:A plasma polymerization film 2 of a fluorine-based resin with a thickness of 10-200Angstrom is formed on a fluorine-based resin board 1; a conductor layer 3 is formed on this film directly or via a substratum layer 4. The fluorine- based resin substrate which has been treated in advance with a plasma may be used; if the board is treated with the plasma, close contact performance between the fluorine-based resin board and the plasma polymerization film is enhanced further. By this setup, an excellent high-frequency characteristic is obtained; a close contact force between the conductor layer 3 and the board 1 can be enhanced.

5. 发明专利

JP2000353862A MANUFACTURE OF SEMICONDUCTOR LAMINATED STRUCTURE 失效
公开(公告)号：JP2000353862A
公开(公告)日：2000-12-19
申请号：JP2000080256
申请日：2000-03-22
申请人： FURUKAWA ELECTRIC CO LTD
发明人： ARAKAWA TOMOSHI , MUKOHARA TOMOKAZU , YAMANAKA NOBUMITSU , KASUKAWA AKIHIKO
IPC分类号： H01L31/10 , H01L33/06 , H01L33/14 , H01L33/30 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laminated structure, in which light rays having a plurality of emission wavelengths are oscillated from the same quantum well layer, and a method for manufacturing the structure. SOLUTION: A semiconductor laminated structure A2 has a layered structure L, in which a quantum well structure 4 is arranged between a lower light confining layer 3a and an upper light confining layer 3b and at least part of the structure 4 becomes a light emitting region B2 which emits a light having a wavelength shorter than that of the other parts. The structure A2 is manufactured by successively growing a lower clad layer 2, the lower light confining layer 3a, the quantum well structure 4, the upper light confining layer 3b, and a first-conductive first semiconductor layer 5 on a semiconductor substrate 1 by the epitaxial crystal growth method, and then an opposite-conductivity second semiconductor layer 6 is laminated upon the entire or partial surface of the first semiconductor layer 5. The second semiconductor layer 6 may be removed after lamination.

6. 发明专利

JPH10135512A SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH10135512A
公开(公告)日：1998-05-22
申请号：JP28526296
申请日：1996-10-28
申请人： FURUKAWA ELECTRIC CO LTD
发明人： NISHIKATA KAZUAKI , SHIMIZU HITOSHI , YAMANAKA NOBUMITSU
IPC分类号： H01L21/203 , H01L21/205 , H01L33/06 , H01L33/30 , H01S5/00 , H01S5/026 , H01L33/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element and a method for manufacturing the semiconductor elements of which property is stabilized and of which productivity is improved. SOLUTION: By this method at least a lower clad layer 2, core layers 3, 4 and 5 and an upper clad layer 8 are orderly laminated on a substrate 1 and a semiconductor element having a ridge waveguide route is manufactured. At this step, the lower clad layer 2 and the core layer 3, 4 and 5 made of AlGaInAs family are firstly contained on the substrate 1 by the MBE method(molecular beam epitaxial method) and a first semiconductor laminated structure with a most upper layer 7 made of GaInAs is made to grow. Next a second semiconductor laminated structure containing an upper clad layer 8 made of GaInAsP family is made to grow by the MOCVD method(metal organic chemical vapor deposition method). Next a second laminated structure body is machined into a ridge stripe shape.

7. 发明专利

JPS63303058A PRODUCTION OF METAL COATED PLASTIC FILM 失效
公开(公告)号：JPS63303058A
公开(公告)日：1988-12-09
申请号：JP13896187
申请日：1987-06-04
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KUMAZAWA KINYA , YAMANAKA NOBUMITSU , KOMATSU MASAYA
IPC分类号： B32B15/082 , B32B15/08 , C23C14/20 , C23C14/58
摘要： PURPOSE:To produce a metal coated plastic film having superior adhesion by adhering a thin metal film on one side of a plastic film and subjecting the other side to surface fluorination treatment with low temp. plasma. CONSTITUTION:A thin film of a desired metal or alloy is adhered to one side of a plastic film such as a film of PE, PP or polyimide by physical vapor deposition. The other side is then subjected to surface fluorination treatment with low temp. plasma of a fluorine-contg. gas such as F2, CF4 or SF6 under 10Torr pressure to obtain a metal coated plastic film having very low gas permeability. Even when the film is allowed to stand in a hot humid gas over a long period, exfoliation is not caused on the interface between the metal film and the base plastic film.

8. 发明专利

JPS60206858A FLAME-RETARDANT COMPOSITION CONTAINING THERMOPLASTIC STYRENE ELASTOMER 失效
公开(公告)号：JPS60206858A
公开(公告)日：1985-10-18
申请号：JP6277084
申请日：1984-03-30
申请人： FURUKAWA ELECTRIC CO LTD
发明人： HORIGUCHI MASAO , YAMANAKA NOBUMITSU , NOJIRI AKIO , KONDOU MASAYUKI
IPC分类号： C08K3/22 , C08L1/00 , C08L23/00 , C08L23/28 , C08L27/00 , C08L51/00 , C08L51/02 , C08L53/00 , C08L53/02 , C08L77/00 , C08L101/00
摘要： PURPOSE:To obtain a compsn. having flame retardance imparted thereto without detriment to flexibility and resistance to heat and weather, by blending a chlorinated polypropylene and antimony trioxide with a thermoplastic styrene elastomer. CONSTITUTION:2-30pts.wt. chlorinated polypropylene and 1-15pts.wt. antimony trioxide are blended with 100pts.wt. thermoplastic styrene elastomer. Examples of the thermoplastic styrene elastomers are a styrene/butadiene/styrene block copolymer, a styrene/isoprene/styrene copolymer and a styrene/butylene/styrene/styrene copolymer. Not more than 50wt% other plastic or rubber having good compatibility may be used as a principal ingredient for said styrene elastomer. Chlorinated polypropylenes having a chlorine content of 30-80% are preferred.

9. 发明专利

JPH01195269A METAL-COATED PLASTIC FILM 失效
公开(公告)号：JPH01195269A
公开(公告)日：1989-08-07
申请号：JP1725388
申请日：1988-01-29
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KOMATSU MASAYA , KUMAZAWA KINYA , YAMANAKA NOBUMITSU , SEKI OSAMU
IPC分类号： C23C14/06 , C23C14/14 , C23C14/16 , C23C14/20
摘要： PURPOSE:To form a metallic film excellent in adhesive strength and oxidation resistance with high productivity by forming a thin metallic-film layer of the desired film thickness provided between the thin metallic-film layers formed by a sputtering method on the surface of a plastic film by a vacuum vapor deposition method. CONSTITUTION:A primary thin metallic-film layer 1 of Cu, etc., is directly formed on a plastic film 5 at least to 5Angstrom : film thickness, by a sputtering method. Subsequently, a thin metallic-film layer 2 of the desired film thickness is efficiently formed on the above primary thin metallic-film layer 1 by a vacuum vapor deposition method. Successively, a secondary thin metallic-film layer 3 of Cu, etc., of at least 50Angstrom film thickness is formed on the outermost surface of the above thin metallic-film layer 2 by a sputtering method. By this method, a metallic coating composed of a thin metallic-film 4 in which the adhesive strength of the thin metallic-film layer 2 to the plastic film 5 is improved by means of the above primary thin metallic-film layer 1 and also resistance to moisture and heat is improved by means of the above secondary thin metallic- film layer 3 can be formed.

10. 发明专利

JPS6412596A MANUFACTURE OF FLEXIBLE PRINTED SUBSTRATE 失效
公开(公告)号：JPS6412596A
公开(公告)日：1989-01-17
申请号：JP16841687
申请日：1987-07-06
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KUMAZAWA KINYA , KOMATSU MASAYA , YAMANAKA NOBUMITSU
IPC分类号： H05K3/16
摘要： PURPOSE:To obtain a flexible substrate by a method wherein one or both surfaces of a plastic film are subjected to a low temperature plasma treatment in O2 or gas containing O2 and then a conductor thin film is formed by a sputtering method with a composite copper target containing 1-15wt.% of one of Ni, Cr, Ti, Al, Ag, Fe, Zn and Sn or alloy composed of two or more of them. CONSTITUTION:A plastic film such as a polyethylene terephthalate film is subjected to a low temperature plasma treatment in O2, CO2 or Ar or N2 containing O2 and the surface is subjected to a fine etching to clean and to form functional groups such as -CO, -COOH and -OH and the adhesiveness of the film surface is improved. Then a conductor thin film is formed by a sputtering method with a composite copper target containing 1-15wt.% of one of Ni, Cr, Ti, Al, Ag, Fe, Zn and Sn which are highly corrosion-resistant and form mixed crystal or eutectic easily or alloy composed of two or more of them, especially with a target thin film containing 5-10wt.% of Ni and Cr. With this constitution, a flexible substrate with excellent corrosion-resistant properties can be obtained without degrading other properties.

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