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1. 发明申请

WO2015122181A4 MANUFACTURING METHOD FOR STRONTIUM TITANATE FINE PARTICLES, AND STRONTIUM TITANATE FINE PARTICLES 审中-公开
标题翻译：钛酸锶微粒和钛酸锶微粒的制造方法
公开(公告)号：WO2015122181A4
公开(公告)日：2015-10-01
申请号：PCT/JP2015000618
申请日：2015-02-10
申请人： FUJIFILM CORP , UNIV TOHOKU
发明人： SASAKI TSUTOMU , TANAKA ATSUSHI , SUZUKI MASAYUKI , ADSCHIRI TADAFUMI
IPC分类号： C01G23/00 , B01J3/00
CPC分类号： C01G23/006 , C01P2004/03 , C01P2004/38 , Y02P20/544
摘要： [Problem] To provide: a manufacturing method for strontium titanate fine particles which enables the high yield manufacture of strontium titanate fine particles having a controlled shape; and strontium titanate fine particles. [Solution] A manufacturing method for strontium titanate fine particles comprising: step A1, in which an Sr-containing aqueous solution and a Ti-containing aqueous solution are prepared; step B1, in which the Sr-containing aqueous solution and the Ti-containing aqueous solution are mixed to prepare a mixed solution; step C1, in which a basic compound is added to the mixed solution to adjust the mixed solution so as to be basic, and a reaction solution is prepared; a step D1, in which the reaction solution is subjected to a sub-critical or super-critical reaction; and a step E1, in which, prior to the implementation of step D1, an amphipathic compound, which has a carboxyl group, and an organic basic compound, which does not contain a metallic element, are added to the Sr-containing aqueous solution, the Ti-containing aqueous solution, the mixed solution, or the reaction solution. The pH of the reaction solution used in step D1 is greater than 10.
摘要翻译：本发明提供一种钛酸锶微粒的制造方法，其特征在于，能够高收率地制造具有受控形状的钛酸锶微粒; 和钛酸锶细颗粒。 [解决方案]一种钛酸锶微粒的制造方法，其特征在于，包括：制备含有Sr的水溶液和含Ti水溶液的工序A1，步骤B1，其中将含Sr水溶液和含Ti水溶液混合以制备混合溶液; 步骤C1，其中向混合溶液中加入碱性化合物以将混合溶液调节至碱性，制备反应溶液; 步骤D1，其中反应溶液经受亚临界或超临界反应; 步骤E1，其中在实施步骤D1之前，将含有羧基的两亲性化合物和不含金属元素的有机碱性化合物加入到含Sr水溶液中，含钛水溶液，混合溶液或反应溶液。步骤D1中使用的反应溶液的pH大于10。

2. 发明申请

WO2015122180A4 MANUFACTURING METHOD FOR STRONTIUM TITANATE FINE PARTICLES 审中-公开
标题翻译：钛酸锶微粒的制造方法
公开(公告)号：WO2015122180A4
公开(公告)日：2015-10-01
申请号：PCT/JP2015000617
申请日：2015-02-10
申请人： FUJIFILM CORP , UNIV TOHOKU
发明人： SASAKI TSUTOMU , TANAKA ATSUSHI , SUZUKI MASAYUKI , ADSCHIRI TADAFUMI
IPC分类号： C01G23/00 , B01J3/00
CPC分类号： C01G23/006 , B01J23/002 , B01J23/02 , B01J23/58 , B01J35/004 , B01J37/03 , B01J37/10 , C01P2002/72 , C01P2004/61 , C01P2004/62 , C01P2004/64 , Y02P20/544
摘要： [Problem] To manufacture perovskite-phase strontium titanate fine particles in low alkali conditions. [Solution] Strontium titanate fine particles are manufactured by performing the following steps: step A1, in which an Sr-containing aqueous solution and a Ti-containing aqueous solution are prepared; step B1, in which the Sr-containing aqueous solution and the Ti-containing aqueous solution are mixed to prepare a mixed solution; step C1, in which a basic substance is added to the mixed solution to adjust the pH of the mixed solution so as to be greater than 10, and a reaction solution is prepared; and step D1 in which the reaction solution is subjected to a hydrothermal reaction at a temperature of at least 250℃, or a sub-critical or super-critical reaction. If the pH of the reaction solution to be prepared in step C1 is taken as X, and the reaction temperature of the reaction solution in step D1 is taken as Y, X and Y satisfy Y>-100X+1400, and X≥10, and Y≥250.
摘要翻译： [问题]在低碱性条件下制造钙钛矿相钛酸锶细颗粒。 [溶液]通过以下步骤制造钛酸锶微粒：制备含Sr含水溶液和含Ti水溶液的步骤A1，步骤B1，其中将含Sr水溶液和含Ti水溶液混合以制备混合溶液; 步骤C1，其中向混合溶液中加入碱性物质以将混合溶液的pH调节至大于10，制备反应溶液; 和步骤D1，其中反应溶液在至少250℃或亚临界或超临界反应的温度下进行水热反应。如果将步骤C1中制备的反应溶液的pH作为X，将步骤D1中的反应溶液的反应温度设为Y，则X和Y满足Y> -100X + 1400，X≥10， Y≥250。

3. 发明公开

EP2722874A4 METHOD FOR PRODUCING AMORPHOUS OXIDE THIN FILM AND THIN FILM TRANSISTOR 审中-公开
标题翻译：方法用于生产无定形的和氧化物薄膜的薄膜晶体管
公开(公告)号：EP2722874A4
公开(公告)日：2014-12-03
申请号：EP12800779
申请日：2012-06-08
申请人： FUJIFILM CORP
发明人： UMEDA KENICHI , TANAKA ATSUSHI , SUZUKI MASAYUKI , SHIMODA TATSUYA
IPC分类号： H01L21/368 , H01L21/336 , H01L29/786 , H01L51/50
CPC分类号： H01L21/02565 , H01L21/02554 , H01L21/02592 , H01L21/02628 , H01L22/10 , H01L27/14687 , H01L27/14698 , H01L29/78693 , H01L2924/0002 , H01L2924/00

4. 发明公开

EP2135289A4 ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE 审中-公开
标题翻译：有机电致发光
公开(公告)号：EP2135289A4
公开(公告)日：2012-07-04
申请号：EP08740155
申请日：2008-04-03
申请人： FUJIFILM CORP
发明人： MATSUNAGA ATSUSHI , NAKAYAMA MASAYA , TANAKA ATSUSHI
IPC分类号： H01L29/786 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/322 , H01L27/3262 , H01L2251/5338 , H05B33/12

5. 发明公开

EP2135288A4 ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND PATTERNING METHOD 审中-公开
标题翻译：有机电致发光和程序结构
公开(公告)号：EP2135288A4
公开(公告)日：2012-07-04
申请号：EP08740154
申请日：2008-04-03
申请人： FUJIFILM CORP
发明人： MATSUNAGA ATSUSHI , NAKAYAMA MASAYA , TANAKA ATSUSHI
IPC分类号： H01L29/786 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/3262 , H01L51/0013 , H01L51/0081 , H01L51/0087 , H01L2251/5338 , H05B33/10 , H05B33/22

6. 发明专利

JP2014207431A 金属酸化物膜及びその製造方法、薄膜トランジスタ、表示装置、イメージセンサ並びにＸ線センサ有权
标题翻译：金属氧化物膜，其制造方法，薄膜晶体管，显示器件，图像传感器和X射线传感器
公开(公告)号：JP2014207431A
公开(公告)日：2014-10-30
申请号：JP2014014679
申请日：2014-01-29
申请人：富士フイルム株式会社 , Fujifilm Corp
发明人： TAKADA MASAHIRO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L21/368 , H01L21/336 , H01L27/144 , H01L27/146 , H01L29/24 , H01L29/786 , H01L51/50
CPC分类号： H01L29/7869 , C01G15/00 , C01G15/006 , C01P2002/74 , C01P2006/40 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02628 , H01L21/02664 , H01L29/24 , H01L29/66969
摘要：【課題】比較的低温で、かつ大気圧下で製造することができる金属酸化物膜及びその製造方法、並びに、酸化物半導体膜、薄膜トランジスタ、表示装置、イメージセンサ及びX線センサを提供する。【解決手段】X線光電子分光分析によって得られるXPSスペクトルにおいて、結合エネルギーが402eV以上405eV以下の範囲にピーク位置を持つ成分が含まれ、且つ窒素の1s電子に帰属するピークエネルギーの強度をピーク分離によって求めたとき、式(1):A/(A+B)≧0.39の関係を満足する、金属酸化物膜及びその製造方法、並びに、酸化物半導体膜、薄膜トランジスタ、表示装置、イメージセンサ及びX線センサを提供する。式(1)中、Aは、結合エネルギーが402eV以上405eV以下の範囲にピーク位置を持つ成分のピーク面積を表し、Bは、結合エネルギーが406eV以上408eV以下の範囲にピーク位置を持つ成分のピーク面積を表す。【選択図】図1
摘要翻译：要解决的问题：为了提供可在大气压下在较低温度下制造的金属氧化物膜，其制造方法和氧化物半导体膜，薄膜晶体管，显示装置，图像传感器，和X射线传感器。解决方案：提供一种金属氧化物膜，其包含在通过X射线光电子能谱法获得的XPS光谱中具有在402-405eV的结合能范围内的峰位置的成分，并满足由在通过峰值分离确定来自1s的氮电子的峰值能量的强度的情况下，式（1）。式（1）：A /（A + B）≥0.39。此外，提供了制造金属氧化物膜，氧化物半导体膜，薄膜晶体管，显示装置，图像传感器和X射线传感器的方法。在式（1）中，“A”表示具有在402-405eV的结合能范围内的峰位置的成分的峰面积，“B”表示在结合物中具有峰位置的成分的峰面积能量范围为406-408 eV。

7. 发明专利

JP2014143397A Semiconductor film, semiconductor film manufacturing method, solar cell, light-emitting diode, thin film transistor and electronic device 有权
标题翻译：半导体膜，半导体膜制造方法，太阳能电池，发光二极管，薄膜晶体管和电子器件
公开(公告)号：JP2014143397A
公开(公告)日：2014-08-07
申请号：JP2013246566
申请日：2013-11-28
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , KIKUCHI MAKOTO , TANAKA ATSUSHI , SUZUKI MASAYUKI , KANEMITSU YOSHIHIKO
IPC分类号： H01L21/368 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/208 , H01L29/06 , H01L29/786 , H01L31/06
CPC分类号： H01L33/06 , H01L29/0665 , H01L29/201 , H01L29/245 , H01L29/66742 , H01L29/66969 , H01L29/78681 , H01L31/0304 , H01L31/0324 , H01L31/035218 , H01L31/18 , H01L31/184 , H01L33/0062 , H01L33/0091 , H01L33/30 , H01L33/44 , H01L51/502
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor film which can obtain a high photocurrent value used for a solar cell using colloidal quantum dots and inhibit film peeling.SOLUTION: A semiconductor film comprises: an aggregate which contains metal atoms and has an average particle diameter of 2 nm-15 nm and contains semiconductor quantum dots containing at least one selected from a group consisting of PbS, PbSe, InN, InAs, InSb and InP; and a semiconductor film having thiocyanate ions which coordinate to the semiconductor quantum dots and metal ions which are potassium ions or lithium ions, in which an average particle diameter of the quantum dots is 2-15 nm.
摘要翻译：要解决的问题：提供可以获得使用胶体量子点的太阳能电池的高光电流值并抑制膜剥离的半导体膜。解决方案：半导体膜包括：含有金属原子并具有平均粒径 2nm-15nm，并且包含含有选自PbS，PbSe，InN，InAs，InSb和InP中的至少一种的半导体量子点; 以及半导体膜，其具有与量子点的平均粒径为2〜15nm的作为钾离子或锂离子的半导体量子点和金属离子配位的硫氰酸根离子。

8. 发明专利

JP2014107453A Oxide semiconductor element, method for manufacturing oxide semiconductor element, display device, and image sensor 有权
标题翻译：氧化物半导体元件，制造氧化物半导体元件的方法，显示器件和图像传感器
公开(公告)号：JP2014107453A
公开(公告)日：2014-06-09
申请号：JP2012260201
申请日：2012-11-28
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： MOCHIZUKI FUMIHIKO , ISODA TOMOTAKE , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , H01L21/336 , H01L27/146 , H01L51/50
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78633
摘要： PROBLEM TO BE SOLVED: To secure operation stability during light irradiation, and to enhance a protection function of an oxide semiconductor layer while suppressing a manufacturing cost.SOLUTION: An oxide semiconductor element 10 comprises: an electrode composed of a metallic material of any of electrodes 14, 20, and 22; an oxide semiconductor layer 18 including at least one selected from In, Zn, Ga, and Sn; and a protective layer 24 laminated in the oxide semiconductor layer 18 and composed of an inorganic insulating layer 26 and the same metallic material as the electrodes.
摘要翻译：要解决的问题：确保光照射期间的操作稳定性，并且在抑制制造成本的同时提高氧化物半导体层的保护功能。解决方案：氧化物半导体元件10包括：由任何电极的金属材料构成的电极 14，20和22; 包含选自In，Zn，Ga和Sn中的至少一种的氧化物半导体层18; 以及层叠在氧化物半导体层18中并由无机绝缘层26和与电极相同的金属材料构成的保护层24。

9. 发明专利

JP2014093510A Manufacturing method for electronic device and laminate used in manufacturing method 审中-公开
标题翻译：制造方法中使用的电子器件和层压体的制造方法
公开(公告)号：JP2014093510A
公开(公告)日：2014-05-19
申请号：JP2012245207
申请日：2012-11-07
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NAKAYAMA MASAYA , YUYA SHIGENORI , KAKIUCHI RYOZO , MOCHIZUKI FUMIHIKO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L27/12 , B32B15/04 , G09F9/00 , H01L21/02
CPC分类号： H01L27/1218 , H01L27/14665 , H01L27/3244 , H01L31/03926 , H01L31/03928 , H01L51/003 , Y02E10/541 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To manufacture a high-performance electronic device on a flexible substrate by means of a batch process.SOLUTION: In an electronic device 3, a structure 2 including an element having a specific function is formed on a porous anode-oxidation insulating film 102 of a flexible substrate 10 including the porous anode-oxidation insulating film 102 on an aluminum material 101. In a method for manufacturing the electronic device, the flexible substrate 10 and a light transmissive support 12 are prepared; an adhesive 11 having heat resistance is added in a sticking region where the flexible substrate 10 is stuck on a surface of the light transmissive support 12, during a process of forming the structure 2; the flexible substrate 10 is stuck on the light transmissive support 12 via the adhesive 11, the structure 2 is formed on the porous anode-oxidation insulating film 102, and the adhesive strength of the adhesive 11 is decreased by irradiation of a laser beam L from the back face side of the light transmissive support 12, and thereby the light transmissive support 12 is peeled off from the flexible substrate 10.
摘要翻译：要解决的问题：通过间歇工艺在柔性基板上制造高性能电子器件。解决方案：在电子器件3中，在多孔阳极氧化物上形成包括具有特定功能的元件的结构2 包括在铝材料101上的多孔阳极 - 氧化绝缘膜102的柔性基板10的绝缘膜102.在制造电子器件的方法中，制备柔性基板10和透光支撑体12; 在形成结构体2的过程中，在柔性基板10粘贴在透光性支撑体12的表面上的粘贴区域中添加具有耐热性的粘合剂11; 柔性基板10通过粘合剂11粘贴在透光性支撑体12上，结构体2形成在多孔阳极氧化绝缘膜102上，粘合剂11的粘合强度通过从透光支撑体12的背面侧，从而透光支撑体12从柔性基板10剥离。

10. 发明专利

JP2014017490A Inorganic film manufacturing method 审中-公开
标题翻译：无机薄膜制造方法
公开(公告)号：JP2014017490A
公开(公告)日：2014-01-30
申请号：JP2013149144
申请日：2013-07-18
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NOMOTO MAKI , UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI
IPC分类号： H01L21/368 , C01G23/00 , C01G39/00 , C01G41/00 , H01L21/336 , H01L29/26 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a good-quality inorganic film having specific resistance appropriate for transistor drive.SOLUTION: An inorganic film represented by a general formula NMQO(where N represents Zn or Mg, M represents Ti, W or Mo, Q represents In or Fe, and a, b, c, d are positive real numbers) is deposited by coating of a raw material liquid containing at least one of oxide, alkoxide and organic metallic compound of N, at least one of oxide, alkoxide and organic metallic compound of M, oxide, alkoxide and organic metallic compound of Q and an organic solvent, and a semiconductor film 4 is formed by a heat treatment. A heat source of the heat treatment is an excimer laser which is a pulse laser having a pulse width of 100 ns and under.
摘要翻译：要解决的问题：提供具有适合于晶体管驱动的电阻率的优质无机膜。溶液：由通式NMQO表示的无机膜（其中N表示Zn或Mg，M表示Ti，W或Mo，Q表示 In或Fe，以及a，b，c，d为正实数）通过涂覆含有氧化物，醇盐和有机金属化合物N，至少一种氧化物，醇盐和有机物的原料液体而沉积 M，氧化物，醇盐和有机金属化合物的金属化合物和有机溶剂，并且通过热处理形成半导体膜4。热处理的热源是作为脉冲宽度为100ns以下的脉冲激光的准分子激光器。

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