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1. 发明申请

WO2008028625A3 METHOD FOR SIMULTANEOUSLY DOPING AND OXIDIZING SEMICONDUCTOR SUBSTRATES, AND ITS USE 审中-公开
标题翻译：同时掺杂和氧化半导体衬底及其使用的方法
公开(公告)号：WO2008028625A3
公开(公告)日：2008-05-08
申请号：PCT/EP2007007703
申请日：2007-09-04
申请人： FRAUNHOFER GES FORSCHUNG , BIRO DANIEL , PREU RALF , RENTSCH JOCHEN
发明人： BIRO DANIEL , PREU RALF , RENTSCH JOCHEN
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for simultaneously doping and oxidizing semiconductor substrates and to doped and oxidized semiconductor substrates which have been produced in this manner. The invention also relates to the use of this method for producing solar cells.
摘要翻译：本发明涉及用于同时掺杂和氧化半导体衬底的方法以及以这种方式生产的掺杂和氧化的半导体衬底。此外，本发明涉及该方法用于生产太阳能电池的用途。

2. 发明申请

WO2011157422A3 METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 审中-公开
标题翻译：一种用于生产光伏太阳能电池
公开(公告)号：WO2011157422A3
公开(公告)日：2012-12-27
申请号：PCT/EP2011002968
申请日：2011-06-16
申请人： FRAUNHOFER GES FORSCHUNG , MACK SEBASTIAN , JAEGER ULRICH , WOLF ANDREAS , BIRO DANIEL , PREU RALF , KAESTNER GERO
发明人： MACK SEBASTIAN , JAEGER ULRICH , WOLF ANDREAS , BIRO DANIEL , PREU RALF , KAESTNER GERO
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L21/2255 , H01L21/268 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell, comprising the following steps: A. texturising a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a flat low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate by means of thermal oxidation.
摘要翻译：本发明涉及一种用于制造光伏太阳能电池，包括以下方法步骤：A.纹理化半导体衬底的前侧（2）; B.生成上的前侧的选择性发射极的掺杂（2）通过施加到前侧的半导体基板（2）形成的平面Niedrigdotierbereich（4）和在其内的本地Hochdotierbereich（3）; 和C.施加至少一个金属发射极接触结构上的前侧（2）的半导体衬底，至少在局部高掺杂的区域，其中所述方法之间同时步骤B和C在前面和在半导体衬底各自具有氧化硅层（在步骤B1图5a，5b的背面的）通过热氧化产生的。

3. 发明申请

WO2012000612A3 METHOD FOR PRODUCING A SELECTIVE DOPING STRUCTURE IN A SEMICONDUCTOR SUBSTRATE IN ORDER TO PRODUCE A PHOTOVOLTAIC SOLAR CELL 审中-公开
标题翻译：方法产生选择性DOTIERSTRUKTUR在半导体衬底用于生产光伏太阳能电池
公开(公告)号：WO2012000612A3
公开(公告)日：2012-12-20
申请号：PCT/EP2011002965
申请日：2011-06-16
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , JAEGER ULRICH , BIRO DANIEL , VOLK ANNE-KRISTIN , SEIFFE JOHANNES , MACK SEBASTIAN , WOLF ANDREAS , PREU RALF
发明人： JAEGER ULRICH , BIRO DANIEL , VOLK ANNE-KRISTIN , SEIFFE JOHANNES , MACK SEBASTIAN , WOLF ANDREAS , PREU RALF
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L21/2254 , H01L21/268 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： The invention relates to a method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method comprises the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate by means of liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.
摘要翻译：本发明涉及一种用于在用于制造光生伏打太阳能电池的制造半导体衬底的选择性Dotierstruktur。该方法包括（A）沉积在半导体基板的发射极侧的掺杂层（2），（B）的掺杂层（2）的熔融区域的局部加热和（2）位于该半导体衬底的熔点范围的掺杂层的下方，从而使液 - 液的手段是从掺杂剂层（2）扩散的掺杂剂扩散到熔化的半导体衬底，从而使熔融共混物的固化后，一个Hochdotierbereich（3）产生的（C）通过在半导体基板产生二维Niedrigdotierbereiches加热全球性的，（（D）除去掺杂层 2）和（e）去除或在Dotierseite转换半导体衬底的层，使得所述Niedrigdotierungs-的和近表面部分的高杂质区域被去除或转化成非导电层。

4. 发明申请

WO2010081505A3 SOLAR CELL AND METHOD FOR PRODUCING A SOLAR CELL FROM A SILICON SUBSTRATE 审中-公开
标题翻译：太阳能电池及其方法从硅衬底制造太阳能电池
公开(公告)号：WO2010081505A3
公开(公告)日：2011-04-14
申请号：PCT/EP2009008605
申请日：2009-12-03
申请人： FRAUNHOFER GES FORSCHUNG , BIRO DANIEL , SCHULTZ-WITTMANN OLIVER , LEMKE ANKE , RENTSCH JOCHEN , CLEMENT FLORIAN , HOFMANN MARC , WOLF ANDREAS , GAUTERO LUCA , MACK SEBASTIAN , PREU RALF
发明人： BIRO DANIEL , SCHULTZ-WITTMANN OLIVER , LEMKE ANKE , RENTSCH JOCHEN , CLEMENT FLORIAN , HOFMANN MARC , WOLF ANDREAS , GAUTERO LUCA , MACK SEBASTIAN , PREU RALF
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/1868 , H01L31/02245 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a solar cell from a silicon wafer, comprising the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.
摘要翻译：本发明涉及一种方法，用于从硅晶片制造太阳能电池，其步骤包括：在硅衬底的纹理一侧（1），以改善切割损伤的吸收或去除，以在硅衬底（1）的一侧，B形成发射极区域（2）上通过扩散掺杂剂来形成pn结的硅衬底（1）的一侧，C除去玻璃层，其中，所述玻璃层中含有的掺杂剂，D施加掩模层（3），其中，所述掩蔽层（3）是介电层，例如烧蚀硅衬底（1）的材料的一部分，F施加的金属化（5,6），用于所述太阳能电池的电接触。至关重要的是，E和F是在工艺步骤之间用于形成氧化物层（4），并且进行热氧化，在掩模层（3）和在所述硅衬底上的后续工艺步骤的氧化物层（4）（1）保持。

5. 发明申请

WO2008107194A2 METHOD FOR THE PRECISION PROCESSING OF SUBSTRATES AND USE OF SAID METHOD 审中-公开
标题翻译：方法精密加工基材和及其用途
公开(公告)号：WO2008107194A2
公开(公告)日：2008-09-12
申请号：PCT/EP2008001807
申请日：2008-03-06
申请人： FRAUNHOFER GES FORSCHUNG , UNIV ALBERT LUDWIGS FREIBURG , MAYER KUNO , ALEMAN MONICA , KRAY DANIEL , GLUNZ STEFAN , METTE ANSGAR , PREU RALF , GROHE ANDREAS
发明人： MAYER KUNO , ALEMAN MONICA , KRAY DANIEL , GLUNZ STEFAN , METTE ANSGAR , PREU RALF , GROHE ANDREAS
IPC分类号： C23C18/16 , C25D5/02 , C25D7/12 , H01L21/288
CPC分类号： C23C18/1612 , C23C18/1667 , C23C18/36 , C25D5/024 , C25D7/123 , C25D7/126 , H01L21/31111 , H01L31/18
摘要： The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, for the local introduction of doping agents and the local application of a metal seed layer, wherein a fluid-supported laser, which is to say a laser irradiation of a substrate that is covered in the regions to be processed by an appropriate reactive fluid is conducted.
摘要翻译：本发明涉及一种用于基片的精密加工的方法，特别是对于薄的层的微结构化，本地Dotierstoffeinbringung和金属种子层的局部沉积，其中，激光lüssigkeitsunterstützter女，即其上覆盖在区域的衬底进行加工的合适的反应性液体中的激光照射进行。

6. 发明申请

WO0225742A2 METHOD FOR PRODUCING A SEMICONDUCTOR-METAL CONTACT THROUGH A DIELECTRIC LAYER 审中-公开
标题翻译：通过介电层制造半导体金属接触的方法
公开(公告)号：WO0225742A2
公开(公告)日：2002-03-28
申请号：PCT/EP0110029
申请日：2001-08-30
申请人： FRAUNHOFER GES FORSCHUNG , PREU RALF , SCHNEIDERLOECHNER ERIC , GLUNZ STEFAN , LUEDEMANN RALF
发明人： PREU RALF , SCHNEIDERLOECHNER ERIC , GLUNZ STEFAN , LUEDEMANN RALF
IPC分类号： H01L31/04 , H01L21/00 , H01L21/28 , H01L21/324 , H01L21/42 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/18 , H01L21/268 , H01L31/022425 , Y02E10/50
摘要： The invention relates to a method for electrically contacting a semiconductor layer (13) which is coated with at least one dielectric layer (12). The invention is characterised in that a metal layer (11) is applied to the dielectric layer (12) and in that this metal layer (11) is temporarily locally heated linearly or at certain points with a radiation source (9), under control, in such a way that a local molten mixture consisting exclusively of the metal layer (11), the dielectric layer (12) and the semiconductor layer (13) located directly beneath the dielectric layer (12) is formed. After hardening, this mixture results in an electrical contact between the semiconductor layer (13) and the metal layer (11).
摘要翻译：描述了用于涂覆有至少一个电介质层（12）的半导体层（13）的电接触的方法。本发明的特征在于，一金属层（11）是由辐射源（9）（11）的装置施加到介电层（12）和该金属层短暂加热本地控制点或线状的以这样的方式，使得本地熔体位于专门共混物半导体层的所述金属层（11），介电层（12），并立即在电介质层下的（12）（13）形成，其中（凝固到半导体层（13）和所述金属层之间的电接触之后 11）领先。

7. 发明申请

WO2012069208A1 SUBSTRATE HOLDER FOR THE SURFACE TREATMENT OF SUBSTRATES, AND USE OF THE SUBSTRATE HOLDER 审中-公开
标题翻译：用于表面处理基材和使用基材支架的基材支架
公开(公告)号：WO2012069208A1
公开(公告)日：2012-05-31
申请号：PCT/EP2011005948
申请日：2011-11-25
申请人： FRAUNHOFER GES FORSCHUNG , REINWAND DIRK , HOFMANN MARC , TROGUS DANIEL , HARTMANN PHILIP , NEKARDA JAN-FREDERIK , RENTSCH JOCHEN , PREU RALF
发明人： REINWAND DIRK , HOFMANN MARC , TROGUS DANIEL , HARTMANN PHILIP , NEKARDA JAN-FREDERIK , RENTSCH JOCHEN , PREU RALF
IPC分类号： H01L21/687 , H01L21/673 , H01L21/677
CPC分类号： H01L21/68707 , H01L21/67346 , H01L21/6776 , H01L21/68721 , H01L21/68735
摘要： The invention relates to a substrate holder for the surface coating of substrates which is in frame form. The substrate holder according to the invention is provided with an oblique edge face on which the substrate rests, so that the surfaces is coated completely without any spread to unwanted regions of the substrate. The invention also relates to the use of such a substrate holder.
摘要翻译：本发明涉及一种用于基板表面涂层的基板支架，其形成为框架形状。在根据本发明的衬底保持器的情况下，提供倾斜的边缘表面，衬底搁置在该倾斜的边缘表面上，使得表面的完整涂层发生而不包含衬底的不需要的区域。本发明还涉及这种衬底保持器的用途。

8. 发明申请

WO2010149294A3 METHOD FOR PRODUCING A EWT SOLAR CELL 审中-公开
标题翻译：一种用于生产EWT太阳能电池
公开(公告)号：WO2010149294A3
公开(公告)日：2012-01-26
申请号：PCT/EP2010003583
申请日：2010-06-15
申请人： FRAUNHOFER GES FORSCHUNG , MINGIRULLI NICOLA , BIRO DANIEL , PREU RALF
发明人： MINGIRULLI NICOLA , BIRO DANIEL , PREU RALF
IPC分类号： H01L31/0224 , H01L21/223 , H01L21/225 , H01L31/0216 , H01L31/068 , H01L31/18
CPC分类号： H01L31/068 , H01L21/223 , H01L21/2255 , H01L31/022458 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing an EWT solar cell from a semiconductor substrate (1) of a first doping type, having a front and rear face and a plurality of recesses, each extending from the front to the rear face of the semiconductor substrate, comprising the following process steps: A) producing at least the follow emitter regions of a second doping type opposing the first doping type in the semiconductor substrate (1): a front face emitter, a rear face emitter, and a plurality of connecting emitters, each of which at least partially covers the wall of a recess, wherein the emitter regions each form a pn junction to the semiconductor substrate (1); B) applying at least one base contact structure and at least one emitter contact structure to the rear face of the semiconductor substrate. The invention is characterized in that a front face coating structure is applied to the front face of the semiconductor substrate prior to process step A, wherein the front face coating structure comprises at least one diffusion barrier coating and/or at least one front face doping coating containing the doping material of the second doping type, and in that a diffusion is performed in process step A by means of at least one doping material of the second doping type from the gas phase in order to produce at least the rear face emitter and the plurality of connecting emitters, wherein said diffusion is performed from the gas phase, and the front face emitter is produced in situ in a diffusion furnace.
摘要翻译：本发明涉及一种方法，用于制造EWT - 制成的第一掺杂类型与前和后侧和多个凹部，从前面到半导体衬底的背面上延伸的半导体衬底（1）的太阳能电池中，下面的方法步骤，其包括：生成至少一个第二的下面发射极区域，相反的在半导体衬底中的第一掺杂类型的掺杂类型（1）：前体，后侧发射器和多个连接发射极，其分别覆盖的凹部的壁至少部分地，每个所述发射极区具有pn结在所述半导体衬底（1）上，将至少一种乙Basiskontaktierungsstruktur和至少一个Emitterkontaktierungsstruktur每种情况下在半导体衬底的背面。重要的是，一个前层结构的方法步骤A之前施加到半导体衬底的前侧包含至少一个扩散阻挡层和/或至少一种含第二掺杂类型Vorderseitendotierschicht和在于，所述掺杂剂在方法步骤A中，至少一个在所述第二掺杂类型的掺杂剂的扩散装置执行至少所述发射极和所述多个连接的后侧的气相以产生发射器，所述从气相和原位前侧发射器的生成扩散是在扩散炉中进行。

9. 发明申请

WO2012007143A2 PHOTOVOLTAIC SOLAR CELL AND METHOD FOR PRODUCING A PHOTOVOLTAIC SOLAR CELL 审中-公开
标题翻译：光伏太阳能电池及生产光伏太阳能电池的方法
公开(公告)号：WO2012007143A2
公开(公告)日：2012-01-19
申请号：PCT/EP2011003451
申请日：2011-07-11
申请人： FRAUNHOFER GES FORSCHUNG , THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , BIRO DANIEL , WOLF ANDREAS , PREU RALF
发明人： THAIDIGSMANN BENJAMIN , CLEMENT FLORIAN , BIRO DANIEL , WOLF ANDREAS , PREU RALF
IPC分类号： H01L31/0224
CPC分类号： H01L31/02245 , H01L31/022425 , H01L31/022458 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.
摘要翻译：本发明涉及一种用于制造具有，其步骤包括形成用于将光耦合前方开口的光伏太阳能电池：在碱性掺杂类型的半导体衬底中的产生的多个凹部，B至少在半导体衬底的前侧产生的发射极掺杂类型的一个或多个发射区，其特征在于，所述发射极掺杂类型相反的基本掺杂型，C施加电绝缘的绝缘层和d在太阳能电池，其被设计成可导电地连接到一个Basisdotierbereich所述半导体基板的背面产生在至少一个金属基极接触结构的凹部的金属传导的结构，至少一个金属的在太阳能电池的前其被导电地在Halbleitersubs的前面连接到所述发射极区域前侧接触结构 trates形成，并且在其上形成电连接到通过线接触结构的太阳能电池的背面的至少一个背接触结构。本发明的特征在于，在方法步骤B和/或进一步的方法步骤被附加地形成在每种情况下一个来自前面延伸至后部通道发射极的发射极掺杂类型的区域中的凹部的侧壁上的半导体基板，在方法步骤C的绝缘层，的背面半导体衬底，任选另外的中间夹层，是覆盖施加为使得背面接触结构被施加到绝缘层，如果合适的话其他中间层，在方法步骤d被施加，以使背侧接触结构延伸的半导体衬底的区域与基极掺杂并且因为中间绝缘层的在这些区域的电如果背面接触结构和半导体衬底之间形成绝缘层，并且绝缘层上的基极接触结构形成承滴盘是，施加到多个中间层，使得绝缘层的基极接触结构至少部分地渗透，从而产生基极接触结构和半导体衬底之间的导电连接。本发明还涉及一种光伏太阳能电池。

10. 发明申请

WO2010022911A3 SOLAR CELL AND SOLAR CELL MODULE WITH ONE-SIDED CONNECTIONS 审中-公开
标题翻译：太阳能电池和太阳能电池模块的一面接线
公开(公告)号：WO2010022911A3
公开(公告)日：2011-02-17
申请号：PCT/EP2009006138
申请日：2009-08-25
申请人： FRAUNHOFER GES FORSCHUNG , BIRO DANIEL , MINGIRULLI NICOLA , CLEMENT FLORIAN , PREU RALF , WOEHL ROBERT
发明人： BIRO DANIEL , MINGIRULLI NICOLA , CLEMENT FLORIAN , PREU RALF , WOEHL ROBERT
IPC分类号： H01L31/0224 , H01L31/042
CPC分类号： H01L31/0516 , H01L31/022441 , Y02E10/50
摘要： The invention relates to a solar cell, in particular for connecting to a solar cell module, comprising at least one metallic base contact, at least one metallic emitter contact (5) and a semi-conductor structure having at least one base area and at least one emitter area (3). The base area and emitter area (2,3) are at least partially adjacent to each other forming a pn-junction, the base contact (6) being connected in an electrically conductive manner to the base area (2), the emitter contact (5) being connected in an electrically conductive manner to the emitter area (3) and the solar cells being arranged on the contact side (1) as a base and emitter contact (6,5). Essentially, the solar cell comprises several metallic emitter contacts which are connected in an electrically conductive manner to the emitter area (3) and several metallic base contacts which are connected in an electrically conductive manner to the base area (2). The emitter contacts (5) do not have an electrically conductive connection under each other on the side facing away from the emitter area (3) and the base contacts do not have an electrically conductive connection on the side facing away from the base area (2). The invention also relates to a solar cell module comprising at least two claimed solar cells.
摘要翻译：本发明涉及一种太阳能电池，尤其是用于太阳能电池组件中，其包括至少一个金属基极接触的互连，至少一个金属发射极接触（5）和包含至少一种碱和至少一个发射极区域的半导体结构（3），所述基极和发射极区（2 ，3）至少部分地彼此相邻，以形成pn结，基极接触（6）是导电的（与基区2）和发射极（5）接触导电连接到所述发射极区域（3）和基本的和发射极触点（6.5）在所述太阳能电池的接触侧（1）被布置。至关重要的是，所述太阳能电池包括多个金属发射极接触，其导电地连接到发射极区域（3）和多个金属基极触点，每个导电连接到基极区（2）连接，发射极触点（5）彼此上发射极区域（3）的背离不具有导电的连接侧，并且在所述基区的基极触点（2）由不具有导电的连接背向侧。本发明进一步涉及包含根据本发明的至少两个太阳能电池的太阳能电池模块。

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