专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09306156B2 Methods of manufacturing a magnetoresistive random access memory device 有权
标题翻译：制造磁阻随机存取存储器件的方法
公开(公告)号：US09306156B2
公开(公告)日：2016-04-05
申请号：US14533084
申请日：2014-11-04
申请人： Eun-Sun Noh , Jong-Chul Park , Shin Kwon , Hyung-Joon Kwon , Chae-Lyoung Kim , Hye-Ji Yoon
发明人： Eun-Sun Noh , Jong-Chul Park , Shin Kwon , Hyung-Joon Kwon , Chae-Lyoung Kim , Hye-Ji Yoon
IPC分类号： H01L43/12 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L43/08
摘要： In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificial layers and portions of the etch stop layer are removed to form etch stop layer patterns surrounding upper portions of sidewalls of the lower electrodes, respectively. An upper insulating layer pattern is formed between the etch stop layer patterns to partially define an air pad between the lower electrodes. A first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode layer are formed, and are etched to form a plurality of magnetic tunnel junction (MTJ) structures. Each MTJ structure includes a sequentially stacked first magnetic layer pattern, tunnel layer pattern, and second magnetic layer pattern, and each of the MTJ structures contacts a corresponding one of the lower electrodes.
摘要翻译：在制造MRAM器件的方法中，第一牺牲层，蚀刻停止层和第二牺牲层依次形成在衬底上，然后被部分蚀刻以形成通过其的开口。形成下电极以填充开口。去除第一和第二牺牲层和蚀刻停止层的部分以分别形成围绕下部电极的侧壁的上部的蚀刻停止层图案。在蚀刻停止层图案之间形成上部绝缘层图案，以在下部电极之间部分地限定气垫。形成第一磁性层，隧道势垒层，第二磁性层和上电极层，并被蚀刻以形成多个磁性隧道结（MTJ）结构。每个MTJ结构包括顺序堆叠的第一磁性层图案，隧道层图案和第二磁性层图案，并且每个MTJ结构接触相应的一个下部电极。

2. 发明授权

US09159767B2 Methods of manufacturing magnetoresistive random access memory devices 有权
标题翻译：制造磁阻随机存取存储器件的方法
公开(公告)号：US09159767B2
公开(公告)日：2015-10-13
申请号：US14182316
申请日：2014-02-18
申请人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
发明人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
IPC分类号： H01L43/12 , H01L27/22
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.
摘要翻译：在MRAM器件的方法中，第一和第二图案在第二方向上交替且重复地形成在衬底上。每个第一图案和每个第二图案沿垂直于第二方向的第一方向延伸。去除一些第二图案以形成沿第一方向延伸的第一开口。形成填充第一开口的源极线。在第一和第二图案和源极线上形成掩模。掩模包括沿第一方向的第二开口，每个开口沿第二方向延伸。由第二开口暴露的第二图案的部分被去除以形成第三开口。形成填充第三开口的第三图案。由第一图案和第三图案包围的第二图案被去除以形成第四开口。形成填充第四开口的接触塞。

3. 发明申请

US20140264672A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：磁性随机访问存储器件及其制造方法
公开(公告)号：US20140264672A1
公开(公告)日：2014-09-18
申请号：US14182316
申请日：2014-02-18
申请人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
发明人： Jong-Chul Park , Gwang-Hyun Baek , Hyung-Joon Kwon , In-Ho Kim , Chang-Woo Sun
IPC分类号： H01L27/22 , H01L43/12
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： In a method of an MRAM device, first and second patterns are formed on a substrate alternately and repeatedly in a second direction. Each first pattern and each second pattern extend in a first direction perpendicular to the second direction. Some of the second patterns are removed to form first openings extending in the first direction. Source lines filling the first openings are formed. A mask is formed on the first and second patterns and the source lines. The mask includes second openings in the first direction, each of which extends in the second direction. Portions of the second patterns exposed by the second openings are removed to form third openings. Third patterns filling the third openings are formed. The second patterns surrounded by the first and third patterns are removed to form fourth openings. Contact plugs filling the fourth openings are formed.
摘要翻译：在MRAM器件的方法中，第一和第二图案在第二方向上交替且重复地形成在衬底上。每个第一图案和每个第二图案沿垂直于第二方向的第一方向延伸。去除一些第二图案以形成沿第一方向延伸的第一开口。形成填充第一开口的源极线。在第一和第二图案和源极线上形成掩模。掩模包括沿第一方向的第二开口，每个开口沿第二方向延伸。由第二开口暴露的第二图案的部分被去除以形成第三开口。形成填充第三开口的第三图案。由第一图案和第三图案包围的第二图案被去除以形成第四开口。形成填充第四开口的接触塞。

4. 发明申请

US20130008867A1 METHODS FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION STRUCTURE 审中-公开
标题翻译：制造磁性隧道结构的方法
公开(公告)号：US20130008867A1
公开(公告)日：2013-01-10
申请号：US13533385
申请日：2012-06-26
申请人： Ken Tokashiki , Hyung-Joon Kwon , Myeong-Cheol Kim
发明人： Ken Tokashiki , Hyung-Joon Kwon , Myeong-Cheol Kim
IPC分类号： H01F41/00
CPC分类号： H01F41/302 , B82Y40/00
摘要： Methods for manufacturing a magnetic tunnel junction structure include forming a magnetic tunnel junction (MTJ) layer by sequentially stacking a first ferromagnetic layer, a tunnel insulation layer, and a second ferromagnetic layer on a substrate, forming a mask pattern on the MTJ layer, and etching at least a portion of the MTJ layer in an etching chamber using the mask pattern as an etch mask, wherein the etching of the at least a portion of the MTJ layer includes applying a RF source power to a first electrode of the etching chamber as first RF power in a first pulselike mode, and applying a RF bias power to a second electrode of the etching chamber as second RF power in a second pulselike mode. The second pulselike mode of the RF bias power has a different phase from the first pulselike mode of the RF source power.
摘要翻译：用于制造磁性隧道结结构的方法包括通过在衬底上依次堆叠第一铁磁层，隧道绝缘层和第二铁磁层来形成磁隧道结（MTJ）层，在MTJ层上形成掩模图案，以及使用掩模图案蚀刻蚀刻室中的MTJ层的至少一部分作为蚀刻掩模，其中对MTJ层的至少一部分的蚀刻包括将RF源功率施加到蚀刻室的第一电极作为第一脉冲模式中的第一RF功率，以及以第二脉冲模式的第二RF功率将RF偏置功率施加到蚀刻室的第二电极。 RF偏置功率的第二脉动模式与RF源功率的第一脉动模式具有不同的相位。

5. 发明申请

US20080305595A1 METHODS OF FORMING A SEMICONDUCTOR DEVICE INCLUDING OPENINGS 审中-公开
标题翻译：形成包括开口的半导体器件的方法
公开(公告)号：US20080305595A1
公开(公告)日：2008-12-11
申请号：US12131293
申请日：2008-06-02
申请人： Hyung-Joon Kwon
发明人： Hyung-Joon Kwon
IPC分类号： H01L21/8234 , H01L21/306
CPC分类号： H01L27/11573 , H01L21/76816 , H01L21/76829 , H01L23/53295 , H01L27/105 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method of forming a semiconductor device. According to the method, a gate pattern having a capping insulating layer is formed on a substrate, a first etch stop layer is conformably formed. A first interlayer insulating layer having a planarized upper surface, a second etch stop layer and a second interlayer insulating layer are sequentially formed on the first etch stop layer. A first opening and a second opening are formed. The first opening penetrates the second interlayer insulating layer, the second etch stop layer, the first interlayer insulating layer, the first etch stop layer and the capping insulating pattern to expose the gate electrode, and the second opening penetrates the second interlayer insulating layer, the second etch stop layer, the first interlayer insulating layer and the first etch stop layer to expose the substrate. The forming the first and second openings includes at least one selective etching process and a nonselective etching process.
摘要翻译：提供了形成半导体器件的方法。根据该方法，在衬底上形成具有封盖绝缘层的栅极图案，顺应地形成第一蚀刻停止层。在第一蚀刻停止层上依次形成具有平坦化的上表面，第二蚀刻停止层和第二层间绝缘层的第一层间绝缘层。形成第一开口和第二开口。第一开口穿透第二层间绝缘层，第二蚀刻停止层，第一层间绝缘层，第一蚀刻停止层和封盖绝缘图案以暴露栅电极，并且第二开口穿透第二层间绝缘层，第二蚀刻停止层，第一层间绝缘层和第一蚀刻停止层以暴露衬底。形成第一和第二开口包括至少一个选择性蚀刻工艺和非选择性蚀刻工艺。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式