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US09306156B2 Methods of manufacturing a magnetoresistive random access memory device 有权
标题翻译：制造磁阻随机存取存储器件的方法
公开(公告)号：US09306156B2
公开(公告)日：2016-04-05
申请号：US14533084
申请日：2014-11-04
申请人： Eun-Sun Noh , Jong-Chul Park , Shin Kwon , Hyung-Joon Kwon , Chae-Lyoung Kim , Hye-Ji Yoon
发明人： Eun-Sun Noh , Jong-Chul Park , Shin Kwon , Hyung-Joon Kwon , Chae-Lyoung Kim , Hye-Ji Yoon
IPC分类号： H01L43/12 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L43/08
摘要： In a method of manufacturing an MRAM device, a first sacrificial layer, an etch stop layer, and a second sacrificial layer are sequentially formed on a substrate and then partially etched to form openings therethrough. Lower electrodes are formed to fill the openings. The first and second sacrificial layers and portions of the etch stop layer are removed to form etch stop layer patterns surrounding upper portions of sidewalls of the lower electrodes, respectively. An upper insulating layer pattern is formed between the etch stop layer patterns to partially define an air pad between the lower electrodes. A first magnetic layer, a tunnel barrier layer, a second magnetic layer, and an upper electrode layer are formed, and are etched to form a plurality of magnetic tunnel junction (MTJ) structures. Each MTJ structure includes a sequentially stacked first magnetic layer pattern, tunnel layer pattern, and second magnetic layer pattern, and each of the MTJ structures contacts a corresponding one of the lower electrodes.
摘要翻译：在制造MRAM器件的方法中，第一牺牲层，蚀刻停止层和第二牺牲层依次形成在衬底上，然后被部分蚀刻以形成通过其的开口。形成下电极以填充开口。去除第一和第二牺牲层和蚀刻停止层的部分以分别形成围绕下部电极的侧壁的上部的蚀刻停止层图案。在蚀刻停止层图案之间形成上部绝缘层图案，以在下部电极之间部分地限定气垫。形成第一磁性层，隧道势垒层，第二磁性层和上电极层，并被蚀刻以形成多个磁性隧道结（MTJ）结构。每个MTJ结构包括顺序堆叠的第一磁性层图案，隧道层图案和第二磁性层图案，并且每个MTJ结构接触相应的一个下部电极。

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