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1. 发明申请

US20060175529A1 Large-area detector 审中-公开
标题翻译：大面积检测器
公开(公告)号：US20060175529A1
公开(公告)日：2006-08-10
申请号：US10983452
申请日：2004-11-08
申请人： Eric Harmon , David Salzman , James Hyland , Jerry Woodall , Robert Koudelka
发明人： Eric Harmon , David Salzman , James Hyland , Jerry Woodall , Robert Koudelka
IPC分类号： H01J43/04
CPC分类号： H01L31/1075 , B82Y20/00 , H01L27/1446 , H01L31/035236
摘要： A solid state photodetector is disclosed comprising a multiplicity of photodetector elements, each element using clamped Geiger mode gain to achieve high sensitivity and high speed. The elements are connected together using a common anode to sum their outputs, allowing operation with gray-scale response over a large total photosensitive area. In the preferred embodiment, high speed performance is achieved by isolating each element from the bias supply by means of an integrated series resistor.
摘要翻译：公开了一种固体光电探测器，其包括多个光电检测器元件，每个元件使用钳位盖格模式增益来实现高灵敏度和高速度。这些元件使用公共阳极连接在一起，以便将其输出相加，允许在大的总光敏面积上进行灰度响应的操作。在优选实施例中，通过集成串联电阻器将每个元件与偏置电源隔离来实现高速性能。

2. 发明申请

US20060267007A1 Devices incorporating heavily defected semiconductor layers 审中-公开
标题翻译：结合严重缺陷的半导体层的器件
公开(公告)号：US20060267007A1
公开(公告)日：2006-11-30
申请号：US11320261
申请日：2005-12-28
申请人： David Salzman , Eric Harmon , Jerry Woodall
发明人： David Salzman , Eric Harmon , Jerry Woodall
IPC分类号： H01L29/00
CPC分类号： H01L29/7783 , B82Y20/00 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02422 , H01L21/0245 , H01L21/02461 , H01L21/02463 , H01L21/02491 , H01L21/02507 , H01L21/0251 , H01L21/02546 , H01L21/02576 , H01L21/02631 , H01L29/205 , H01L29/32 , H01L29/88 , H01L31/101 , H01L31/109
摘要： The structure and growth method are disclosed for a novel heterojunction diode structure. The invention exploits the Fermi level pinning properties of dislocations and defects in compound semiconductors to achieve heterojunctions with nonlinear current-voltage characteristics despite highly defected, polycrystalline, or amorphous semiconductors. The invention enable new diode, photodetector, and transistor devices to be implemented using highly lattice-mismatched semiconductors. The invention additionally enables thin film diodes, photodetectors, and transistors to be realized.
摘要翻译：公开了一种新颖的异质结二极管结构的结构和生长方法。本发明利用复合半导体中的位错和缺陷的费米能级钉扎性能，以尽可能地实现具有非线性电流 - 电压特性的异质结，尽管高度缺陷，多晶或非晶半导体。本发明使得能够使用高度晶格失配的半导体实现新的二极管，光电检测器和晶体管器件。本发明还能够实现薄膜二极管，光电检测器和晶体管。

3. 发明申请

US20060145190A1 Surface passivation for III-V compound semiconductors 审中-公开
标题翻译： III-V化合物半导体的表面钝化
公开(公告)号：US20060145190A1
公开(公告)日：2006-07-06
申请号：US11323882
申请日：2005-12-30
申请人： David Salzman , Aristo Yulius , An Chen , Jerry Woodall , Eric Harmon
发明人： David Salzman , Aristo Yulius , An Chen , Jerry Woodall , Eric Harmon
IPC分类号： H01L31/0328
CPC分类号： H01L29/66462 , H01L21/28264 , H01L31/0735 , H01L31/1868 , Y02E10/544
摘要： A structure and method of fabrication are disclosed for improving surface passivation of III-V compound semiconductors. The invention exploits certain anion-rich compound semiconductors to form a high quality interface with a dielectric when anion mobility is increased during an annealing step. Low post-annealing surface state densities result in a low fixed charge density at the interface and low surface recombination velocities. The invention enables microelectronic devices including diode, transistor, solar cell, photodetector, and CCDs with superior performance wherever prior art devices have inferior surface passivation.
摘要翻译：公开了一种用于改善III-V族化合物半导体的表面钝化的结构和制造方法。当退火步骤中阴离子迁移率增加时，本发明利用某些富含阴离子的化合物半导体形成具有电介质的高质量界面。低退火表面状态密度导致界面处固定电荷密度低，表面复合速度低。本发明使得包括二极管，晶体管，太阳能电池，光电检测器和CCD的微电子器件在现有技术的器件具有较差的表面钝化的情况下具有优异的性能。

4. 发明授权

US07179731B2 Hypercontacting 失效
标题翻译：超接触
公开(公告)号：US07179731B2
公开(公告)日：2007-02-20
申请号：US10349831
申请日：2003-01-22
申请人： Eric Harmon , David Salzman , Jerry Woodall
发明人： Eric Harmon , David Salzman , Jerry Woodall
IPC分类号： H01L21/28
CPC分类号： C30B29/403 , C30B23/02 , C30B25/02 , C30B29/406 , H01L29/66318 , H01L29/66462 , H01L29/66924 , H01L29/7371 , H01L29/7785 , H01L29/802
摘要： The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region lowers the contact's tunneling barrier by decreasing the extent of the depletion region at the contact, thereby reducing resistance.
摘要翻译：称为超接触的本发明在化合物半导体的暴露表面区域实现非常高水平的活化掺杂。这使得能够通过在接触附近产生重掺杂区域来产生低电阻欧姆接触。这样的区域通过减少接触处的耗尽区域的程度来降低接触的隧道势垒，从而降低电阻。

5. 发明授权

US06809400B2 Composite pinin collector structure for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的复合pinin集电极结构
公开(公告)号：US06809400B2
公开(公告)日：2004-10-26
申请号：US10389230
申请日：2003-03-14
申请人： Eric Harmon , Jerry Woodall , Hironori Tsukamoto , David Salzman
发明人： Eric Harmon , Jerry Woodall , Hironori Tsukamoto , David Salzman
IPC分类号： H01L27082
CPC分类号： H01L29/0821 , H01L29/7371
摘要： This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojuntion bipolar transistors (HBTs); and more particularly for the collector structure of a double HBT (DHBT). The invention enables high output power at high frequency operation, of high frequency operation at high output power.
摘要翻译：本公开描述了由化合物半导体材料形成的晶体管器件的结构; 特别是用于异质双极晶体管（HBT）; 更具体地涉及双HBT（DHBT）的收集器结构。本发明能够实现高输出功率的高频运行时的高输出功率。

6. 发明申请

US20070108435A1 Method of making nanowires 审中-公开
标题翻译：制造纳米线的方法
公开(公告)号：US20070108435A1
公开(公告)日：2007-05-17
申请号：US11349458
申请日：2006-02-07
申请人： Eric Harmon , Jerry Woodall , David Salzman
发明人： Eric Harmon , Jerry Woodall , David Salzman
IPC分类号： H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02546 , H01L21/02573 , H01L21/0259 , H01L21/02642 , H01L29/0673 , H01L29/0676 , H01L29/20 , H01L29/207 , H01L29/66318 , H01L29/7371
摘要： A novel technique for manufacturing nanostructures and nanostructure is disclosed. The invention exploits techniques to deposit a second semiconductor material on a first semiconductor material with incomplete coverage of the second layer, and forming the nanostructures by filling the holes in the second semiconductor layer with a third semiconductor material. This allows the production of nanowires, nanorods, nanocylinders, and nanotubes with a controllable density and size distribution. Additionally, contact can be made to the bottom of the nanostructures through the first semiconductor layer allowing large area contacts to arrays of nanostructures to be formed. Similarly, contact can be made to the top of the nanostructure by direct deposition of a large area contacting layer. This allows the formation of nanostructure diodes and other nanostructure interconnections. Furthermore, a third large area contact to the second semiconductor layer can be used to modulate the conductivity of the arrays of nanostructures, enabling realization of a wide variety of nano transistors.
摘要翻译：公开了一种用于制造纳米结构和纳米结构的新技术。本发明利用技术将第二半导体材料沉积在具有第二层不完全覆盖的第一半导体材料上，并且通过用第三半导体材料填充第二半导体层中的孔来形成纳米结构。这允许以可控的密度和尺寸分布生产纳米线，纳米棒，纳米瓶和纳米管。此外，可以通过第一半导体层与纳米结构的底部接触，从而形成与纳米结构阵列的大面积接触。类似地，可以通过大面积接触层的直接沉积而与纳米结构的顶部接触。这允许形成纳米结构二极管和其他纳米结构互连。此外，可以使用与第二半导体层的第三大面积接触来调制纳米结构阵列的导电性，从而实现各种各样的纳米晶体管。

7. 发明申请

US20050067629A1 Semimetal semiconductor 审中-公开
标题翻译：半金属半导体
公开(公告)号：US20050067629A1
公开(公告)日：2005-03-31
申请号：US10756997
申请日：2004-01-13
申请人： Jerry Woodall , Eric Harmon , David Salzman
发明人： Jerry Woodall , Eric Harmon , David Salzman
IPC分类号： C30B23/02 , C30B29/40 , H01L29/20 , H01L29/24 , H01L29/36 , H01L29/737 , H01L33/00
CPC分类号： H01L29/36 , C30B23/02 , C30B29/40 , H01L29/20 , H01L29/24 , H01L29/7371
摘要： Certain compound semiconductor materials can be formed with nearly metal-like conductivity, while retaining the crystalline structure, high mobilities, and high carrier velocities of conventional semiconductors. Such bulk and thin-film states of matter, method of creating them, devices formed therefrom, and applications benefiting from said devices and states of matter are disclosed herein.
摘要翻译：某些化合物半导体材料可以形成为接近金属状导电性，同时保持常规半导体的晶体结构，高迁移率和高载流子速度。本文公开了这种物质的体积和薄膜状态，产生它们的方法，由其形成的装置以及受益于所述装置和物质状态的应用。

8. 发明申请

US20080056986A1 Power Generation From Solid Aluminum 有权
标题翻译：固体铝发电
公开(公告)号：US20080056986A1
公开(公告)日：2008-03-06
申请号：US11747706
申请日：2007-05-11
申请人： Jerry Woodall , Eric Harmon , Kurt Koehler , Jeffrey Ziebarth , Charles Allen , Yuan Zheng , Jong-Hyeok Jeon , George Goble , David Salzman
发明人： Jerry Woodall , Eric Harmon , Kurt Koehler , Jeffrey Ziebarth , Charles Allen , Yuan Zheng , Jong-Hyeok Jeon , George Goble , David Salzman
IPC分类号： C01B3/08 , C22C21/00
CPC分类号： C01B3/08 , C22C21/00 , C22C28/00 , Y02E60/36 , Y02P20/133
摘要： A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.
摘要翻译：用于将水分解成氢气和氧化物组分的燃料包括由能够在水中氧化形成氢气的固态源材料的固体状混合物形成的基本上固体的颗粒和氧化物组分的钝化表面层，钝化防止剂，其在有效量下对水基本上是惰性的，以防止在氧化过程中固态材料的钝化。颗粒可以以受控的速率引入水或其它合适的氧化剂中以控制源材料与氧化剂的反应速率，从而控制氢的形成速率。描述了用于以不同重量百分比的源材料生成固体状混合物以防止钝化剂的方法。

9. 发明申请

US20070018192A1 Devices incorporating heavily defected semiconductor layers 审中-公开
标题翻译：结合严重缺陷的半导体层的器件
公开(公告)号：US20070018192A1
公开(公告)日：2007-01-25
申请号：US11314320
申请日：2005-12-20
申请人： David Salzman , Eric Harmon , Jerry Woodall
发明人： David Salzman , Eric Harmon , Jerry Woodall
IPC分类号： H01L33/00
CPC分类号： H01L29/66462 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02422 , H01L21/0245 , H01L21/02461 , H01L21/02463 , H01L21/02491 , H01L21/02507 , H01L21/02546 , H01L21/02576 , H01L21/02631 , H01L29/205 , H01L29/66219 , H01L29/861 , H01L31/101 , H01L31/109
摘要： The structure and growth method are disclosed for a novel heterojunction diode structure. The invention exploits the Fermi level pinning properties of dislocations and defects in compound semiconductors to achieve heterojunctions with nonlinear current-voltage characteristics despite highly defected, polycrystalline, or amorphous semiconductors. The invention enable new diode, photodetector, and transistor devices to be implemented using highly lattice-mismatched semiconductors. The invention additionally enables thin film diodes, photodetectors, and transistors to be realized.
摘要翻译：公开了一种新颖的异质结二极管结构的结构和生长方法。本发明利用复合半导体中的位错和缺陷的费米能级钉扎性能，以尽可能地实现具有非线性电流 - 电压特性的异质结，尽管高度缺陷，多晶或非晶半导体。本发明使得能够使用高度晶格失配的半导体实现新的二极管，光电检测器和晶体管器件。本发明还能够实现薄膜二极管，光电检测器和晶体管。

10. 发明申请

US20060286705A1 Method of passivating compound semiconductor surfaces 审中-公开
标题翻译：钝化化合物半导体表面的方法
公开(公告)号：US20060286705A1
公开(公告)日：2006-12-21
申请号：US11358606
申请日：2006-02-21
申请人： James Hyland , Eric Harmon , David Salzman , Robert Koudelka , Jerry Woodall
发明人： James Hyland , Eric Harmon , David Salzman , Robert Koudelka , Jerry Woodall
IPC分类号： H01L21/00
CPC分类号： H01L29/0692 , H01L21/02164 , H01L21/0217 , H01L21/30617 , H01L21/314 , H01L29/045 , H01L29/66462
摘要： The invention discloses a method of passivating compound semiconductor surfaces aligned to the {110} crystal planes, and devices incorporating said passivated surfaces.
摘要翻译：本发明公开了一种钝化与{110}晶面对准的化合物半导体表面的方法，以及掺入所述钝化表面的器件。

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