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1. 发明授权

US5235198A Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel 失效
标题翻译：用于每个像素的具有简化的电极结构的非隔行扫描线间传输CCD图像感测装置
公开(公告)号：US5235198A
公开(公告)日：1993-08-10
申请号：US869097
申请日：1992-04-14
申请人： Eric G. Stevens , David L. Losee , Edward T. Nelson , Timothy J. Tredwell
发明人： Eric G. Stevens , David L. Losee , Edward T. Nelson , Timothy J. Tredwell
IPC分类号： H01L27/148
CPC分类号： H01L27/14831
摘要： An interline transfer type area image sensor which operates in a non-interlaced mode and has an array of columns and rows of photoreceptor in which charge from each pixel is transferred into a stage of a vertical two-phase CCD shift register formed by adjacent electrodes of the CCD. Each electrode of a stage has a separate voltage clock. An ion implanted vertical transfer barrier region is formed under an edge of each electrode.
摘要翻译：一种行间传送型区域图像传感器，其以非隔行扫描模式操作，并具有列和列的感光体，其中来自每个像素的电荷被转移到由相邻电极形成的垂直两相CCD移位寄存器 CCD。舞台的每个电极都有一个单独的电压时钟。在每个电极的边缘下方形成离子注入垂直转移势垒区域。

2. 发明授权

US06306676B1 Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors 失效
标题翻译：制造用于固态图像传感器的自对准高掺杂光电二极管的方法
公开(公告)号：US06306676B1
公开(公告)日：2001-10-23
申请号：US08628063
申请日：1996-04-04
申请人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
发明人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
IPC分类号： H01L2100
CPC分类号： H01L27/14812 , H01L27/14683 , H01L27/14843
摘要： A method and apparatus of making high energy implanted photodiode that is self aligned with the transfer gate, the high energy implant is defined by providing a substrate, or well, of a first conductivity type, defining a charge coupled device within the substrate, or well, such that gate electrode layers are allowed to exist over areas to contain photodiodes during construction of the charge coupled device, patterning a masking layer to block high energy implants such that openings in the masking layer are formed over the areas of the photodiodes, anisotropically etching down through the gate electrode over the photodiodes to the gate dielectric material, implanting photodiodes with high-energy ions of a second conductivity type opposite the first conductivity type and creating a pinned photodiode by employing a shallow implant of the first conductivity type. The apparatus made by this method yields a photodiode employing high energy ions to form the P/N junction that is self aligned with the transfer gate.
摘要翻译：一种制造与传输栅极自对准的高能量注入光电二极管的方法和装置，高能量注入是通过提供第一导电类型的衬底或阱来限定的，该衬底或阱限定衬底或阱内的电荷耦合器件，使得栅极电极层在电荷耦合器件的构造期间允许存在于包含光电二极管的区域上，构图掩模层以阻挡高能量注入，使得掩模层中的开口形成在光电二极管的区域上，各向异性蚀刻向下通过光电二极管上的栅电极到栅介电材料，用与第一导电类型相反的第二导电类型的高能离子注入光电二极管，并通过采用第一导电类型的浅埋入物产生钉扎光电二极管。通过该方法制造的装置产生使用高能离子的光电二极管，以形成与传输门自对准的P / N结。

3. 发明授权

US5256891A CCD electrode structure for image sensors 失效
标题翻译： CCD电极结构图像传感器
公开(公告)号：US5256891A
公开(公告)日：1993-10-26
申请号：US937456
申请日：1992-08-21
申请人： David L. Losee , Eric G. Stevens
发明人： David L. Losee , Eric G. Stevens
IPC分类号： H01L27/148 , H01L31/0216 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/148 , H01L31/02164
摘要： An image sensor including CCDs, a charge coupled device (CCD) or shift register. Each CCD structure is formed of a set of electrodes wherein at least one electrode of each set is formed of a connected layer of opaque conducting material.
摘要翻译：包括CCD的图像传感器，电荷耦合器件（CCD）或移位寄存器。每个CCD结构由一组电极形成，其中每组的至少一个电极由不透明导电材料的连接层形成。

4. 发明授权

US5070380A Transfer gate for photodiode to CCD image sensor 失效
标题翻译：光电二极管传输门到CCD图像传感器
公开(公告)号：US5070380A
公开(公告)日：1991-12-03
申请号：US566934
申请日：1990-08-13
申请人： Herbert J. Erhardt , Edward T. Nelson , Eric G. Stevens
发明人： Herbert J. Erhardt , Edward T. Nelson , Eric G. Stevens
IPC分类号： H01L27/148 , H01L29/768 , H04N5/363 , H04N5/372 , H04N5/378
CPC分类号： H01L29/76833 , H01L27/14831
摘要： An image sensor formed on a P-type substrate includes a plurality of pinned diode photodiodes, a CCD shift register and a separate buried transfer gate located between each of the photodiodes and the CCD shift register. The photodetectors are arranged in at least one line. The CCD shift register extends along the line of photodetectors. Each of the pinned diode photodetectors includes a first region of N-type conductivity in the substrate and a second region of P+ type conductivity in the first region and along the substrate surface. The CCD shift register includes a channel region of N-type conductivity in the substrate surface and two sets of conductive gates along the channel region and insulated from the substrate surface. Each transfer gate includes a transfer channel region of N-type conductivity in the substrate and extending along the substrate surface from the shift register channel region to the first region of its respective photodetector. Each gate of one of the sets of shift register gates may have a portion which extends over the transfer gate channel region.
摘要翻译：形成在P型基板上的图像传感器包括多个固定二极管光电二极管，CCD移位寄存器和位于每个光电二极管和CCD移位寄存器之间的单独的掩埋传输门。光电探测器布置在至少一条线上。 CCD移位寄存器沿着光电检测器的线延伸。每个钉扎二极管光电探测器包括衬底中的N型导电性的第一区域和第一区域中的沿着衬底表面的P +型导电性的第二区域。 CCD移位寄存器包括衬底表面中N型导电的沟道区和沿着沟道区的两组导电栅，并与衬底表面绝缘。每个转移栅极包括在衬底中的N型导电性的转移沟道区，并且沿衬底表面从移位寄存器沟道区延伸到其各自的光电检测器的第一区。移位寄存器门组中的一个的每个栅极可以具有在传输栅极沟道区域上延伸的部分。

5. 发明授权

US5192920A High-sensitivity, low-noise transistor amplifier 失效
标题翻译：高灵敏度，低噪声晶体管放大器
公开(公告)号：US5192920A
公开(公告)日：1993-03-09
申请号：US854046
申请日：1992-03-18
申请人： Edward T. Nelson , Eric G. Stevens , David M. Boisvert
发明人： Edward T. Nelson , Eric G. Stevens , David M. Boisvert
IPC分类号： H03F1/34 , H03F1/02 , H03F3/345 , H03F3/70
CPC分类号： H03F1/0233 , H03F3/345 , H03F2200/372
摘要： A high-gain, low-noise transistor amplifier comprises an input, an output, and first and second field effect transistors each having a gate, a drain, and a source and being formed in a common semiconductor substrate. The second transistor is a depletion mode transistor if it is of the same conductivity type as the first but is an enhancement mode transistor if it is of opposite conductivity type with respect to the first. In an amplifier configuration, the input is coupled to the gate of the first transistor, the source of the first transistor is coupled to the gate of the second transistor, the source of the second transistor is coupled to the output, and there is a direct-coupled feedback path from the source of the second transistor to the drain of the first transistor. At least the first transistor is formed in an isolated well of conductivity opposite to that of the substrate in the semiconductor substrate and its source is coupled directly to that well.

6. 发明申请

US20120080731A1 PHOTODETECTOR ISOLATION IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的光电隔离
公开(公告)号：US20120080731A1
公开(公告)日：2012-04-05
申请号：US12894262
申请日：2010-09-30
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14607 , H01L27/1461 , H01L27/14645 , H01L27/14689
摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.
摘要翻译：第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

7. 发明申请

US20100148230A1 TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的分离区域
公开(公告)号：US20100148230A1
公开(公告)日：2010-06-17
申请号：US12332407
申请日：2008-12-11
申请人： Eric G. Stevens , Hung Q. Doan
发明人： Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/762 , H01L31/112
CPC分类号： H01L27/14689 , H01L21/76224 , H01L27/1463
摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.
摘要翻译：沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。

8. 发明申请

US20100140728A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
公开(公告)号：US20100140728A1
公开(公告)日：2010-06-10
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L21/265
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.

9. 发明申请

US20100116971A1 BACK-ILLUMINATED CMOS IMAGE SENSORS 有权
标题翻译：后置照明CMOS图像传感器
公开(公告)号：US20100116971A1
公开(公告)日：2010-05-13
申请号：US12266764
申请日：2008-11-07
申请人： John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , Todd J. Anderson , Eric G. Stevens
发明人： John P. McCarten , Joseph R. Summa , Cristian A. Tivarus , Todd J. Anderson , Eric G. Stevens
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
摘要翻译：背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。一个或多个侧孔可以横向邻近于每个光电检测器形成。阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

10. 发明申请

US20090035888A1 TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR 有权
标题翻译：两个外延层，以减少图像传感器中的CROSSTALK
公开(公告)号：US20090035888A1
公开(公告)日：2009-02-05
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00 , H01L27/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

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