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1. 发明授权

US06599574B1 Method and apparatus for forming a dielectric film using helium as a carrier gas 失效
标题翻译：使用氦气作为载气形成电介质膜的方法和装置
公开(公告)号：US06599574B1
公开(公告)日：2003-07-29
申请号：US08627631
申请日：1996-04-04
申请人： Ellie Yieh , Paul Gee , Li-Qun Xia , Francimar Campana , Shankar Venkataranan , Dana Tribula , Bang Nguyen
发明人： Ellie Yieh , Paul Gee , Li-Qun Xia , Francimar Campana , Shankar Venkataranan , Dana Tribula , Bang Nguyen
IPC分类号： C23C1600
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02271 , H01L21/02274 , H01L21/31625 , Y10S438/905 , Y10S438/906
摘要： The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen. The method includes introducing a process gas containing silicon, oxygen, and first dopant atoms into the chamber; using helium as the carrier gas in the system; and processing more substrates between cleanings than a process using nitrogen as carrier gas. A further aspect of the invention includes annealing the dielectric films formed on the substrates at a lower temperature than required by the process using nitrogen as carrier gas.
摘要翻译：本发明涉及电介质层的沉积，更具体地涉及一种用于形成介电层的方法和装置，例如具有改进的膜均匀性，较高沉积速率，优异的间隙填充/回流能力和更平滑的表面形态的硼磷硅酸盐玻璃（BPSG）。该方法形成具有使用氦载气的方法的电介质层，其产生比常规方法和设备基本上更少的下游残留物，从而减少对室清洁的需要并增加处理的晶片的生产量。本发明在形成诸如BPSG的介电层的工艺中使用氦代替氮作为载气，以提供各种意想不到的好处。根据一个方面，本发明在衬底上形成介电膜，并且通过使用产生比使用氮的方法显着更少的下游和上游残留物的氦来延长系统中的室清洁之间的时间。该方法包括将含有硅，氧和第一掺杂剂原子的工艺气体引入室中; 使用氦气作为系统中的载气; 并且在清洗之前处理比使用氮气作为载气的工艺更多的衬底。本发明的另一方面包括在比使用氮作为载气的方法所要求的温度更低的温度下退火形成在基板上的电介质膜。

2. 发明授权

US6099647A Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films 有权
标题翻译：使用掺杂氧化硅膜形成超浅掺杂区域的方法和装置
公开(公告)号：US6099647A
公开(公告)日：2000-08-08
申请号：US409763
申请日：1999-09-30
申请人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
发明人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
IPC分类号： C23C16/40 , C23C16/44 , C23C16/509 , C23C16/52 , H01L21/225 , H01L21/31 , H01L21/316 , H01L21/336 , H01L21/762 , C23C16/00
CPC分类号： C23C16/401 , C23C16/402 , C23C16/4405 , C23C16/4412 , C23C16/5096 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02312 , H01L21/02315 , H01L21/0234 , H01L21/02362 , H01L21/2255 , H01L21/31625 , H01L21/76237 , H01L29/66575
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
摘要翻译：本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

3. 发明授权

US5994209A Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films 失效
公开(公告)号：US5994209A
公开(公告)日：1999-11-30
申请号：US748094
申请日：1996-11-13
申请人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
发明人： Ellie Yieh , Li-Qun Xia , Paul Gee , Bang Nguyen
IPC分类号： C23C16/40 , C23C16/44 , C23C16/509 , C23C16/52 , H01L21/225 , H01L21/31 , H01L21/316 , H01L21/336 , H01L21/762 , H01L21/24 , H01L21/40
CPC分类号： C23C16/401 , C23C16/402 , C23C16/4405 , C23C16/4412 , C23C16/5096 , C23C16/52 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02301 , H01L21/02312 , H01L21/02315 , H01L21/0234 , H01L21/02362 , H01L21/2255 , H01L21/31625 , H01L21/76237 , H01L29/66575
摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

4. 发明授权

US6153540A Method of forming phosphosilicate glass having a high wet-etch rate 失效
标题翻译：形成具有高湿蚀刻速率的磷硅酸盐玻璃的方法
公开(公告)号：US6153540A
公开(公告)日：2000-11-28
申请号：US34850
申请日：1998-03-04
申请人： Ishing Lou , Cary Ching , Peter W. Lee , Rong Pan , Paul Gee , Francimar Campana
发明人： Ishing Lou , Cary Ching , Peter W. Lee , Rong Pan , Paul Gee , Francimar Campana
IPC分类号： C23C16/40 , H01L21/316 , H01L21/31
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02271 , H01L21/31625
摘要： A method and apparatus for controlling the wet-etch rate and thickness uniformity of a dielectric layer, such as a phosphosilicate glass layer (PSG) layer. The method is based upon the discovery that the atmospheric pressure at which a PSG layer is deposited affects the wet-etch rate of the same, during a subsequent processing step, as well as the layer's thickness uniformity. As a result, the method of the present invention includes the step of pressurizing the atmospheric pressure of a semiconductor process chamber within a predetermined range after the substrate is deposited therein. Flowed into the deposition zone is a process gas comprising a silicon source, all oxygen source, and a phosphorous source; and maintaining the deposition zone at process conditions suitable for depositing a phosphosilicate glass layer on the substrate.
摘要翻译：一种用于控制诸如磷硅酸盐玻璃层（PSG）层的介电层的湿蚀刻速率和厚度均匀性的方法和装置。该方法基于以下发现：沉积PSG层的大气压力在随后的处理步骤期间影响其湿蚀刻速率以及层的厚度均匀性。结果，本发明的方法包括在衬底沉积之后在预定范围内对半导体处理室的大气压进行加压的步骤。流入沉积区的是包括硅源，全氧源和磷源的工艺气体; 以及将沉积区保持在适合于在基底上沉积磷硅酸盐玻璃层的工艺条件。

5. 发明申请

US20090031953A1 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：US20090031953A1
公开(公告)日：2009-02-05
申请号：US12249816
申请日：2008-10-10
申请人： Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
发明人： Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
IPC分类号： C23C16/513
CPC分类号： C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/31612
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

6. 发明授权

US07825038B2 Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen 有权
标题翻译：使用含硅前体和原子氧化学气相沉积高质量流动状二氧化硅
公开(公告)号：US07825038B2
公开(公告)日：2010-11-02
申请号：US11754440
申请日：2007-05-29
申请人： Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
发明人： Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/31612
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

7. 发明申请

US20070281496A1 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 有权
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：US20070281496A1
公开(公告)日：2007-12-06
申请号：US11754440
申请日：2007-05-29
申请人： Nitin Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
发明人： Nitin Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/31612
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

8. 发明申请

US20060009479A1 Process for the synthesis of hydromorphone 审中-公开
标题翻译：合成氢吗啡酮的方法
公开(公告)号：US20060009479A1
公开(公告)日：2006-01-12
申请号：US11178717
申请日：2005-07-11
申请人： Timothy Bailey , Paul Gee , Robert Rezaie
发明人： Timothy Bailey , Paul Gee , Robert Rezaie
IPC分类号： C07D489/02 , A61K31/485
CPC分类号： C07D489/02
摘要： There is described a method for converting oripavine to hydromorphone or a physiologically acceptable salt thereof such as hydromorphone hydrochloride involving generation of 8,14-dihydrooripavine utilising diimine.
摘要翻译：描述了将oripavine转化为氢吗啡酮或其生理上可接受的盐如氢马洛芬盐酸盐的方法，其涉及利用二亚氨基产生8,14-二氢高磷脂。

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