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1. 发明授权

US09040420B2 Manufacturing method of semiconductor device including peeling layers from substrates by etching 有权
标题翻译：包括通过蚀刻从衬底剥离层的半导体器件的制造方法
公开(公告)号：US09040420B2
公开(公告)日：2015-05-26
申请号：US11276349
申请日：2006-02-24
申请人： Eiji Sugiyama , Yoshitaka Dozen , Yumiko Fukumoto , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Eiji Sugiyama , Yoshitaka Dozen , Yumiko Fukumoto , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L21/44 , H01L21/78 , H01L27/12 , H01L21/67
CPC分类号： H01L21/7806 , H01L21/31111 , H01L21/6708 , H01L21/67132 , H01L27/1214 , H01L27/1266 , H01L2021/775
摘要： The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.
摘要翻译：本发明的目的是在短时间内进行剥离处理。在剥离层暴露于蚀刻气体的气氛的同时进行剥离。或者，在蚀刻气体的气氛中将用于剥离层的蚀刻气体吹向剥离层的同时进行剥离。具体地说，将蚀刻气体吹向待剥离的部分，同时从基板上撕下被剥离层。或者，在用于剥离层的蚀刻剂中进行剥离，同时向剥离层供给蚀刻剂。

2. 发明申请

US20060199382A1 Manufacturing Method of Semiconductor Device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20060199382A1
公开(公告)日：2006-09-07
申请号：US11276349
申请日：2006-02-24
申请人： Eiji Sugiyama , Yoshitaka Dozen , Yumiko Fukumoto , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Eiji Sugiyama , Yoshitaka Dozen , Yumiko Fukumoto , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L21/44 , H01L21/461
CPC分类号： H01L21/7806 , H01L21/31111 , H01L21/6708 , H01L21/67132 , H01L27/1214 , H01L27/1266 , H01L2021/775
摘要： The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.
摘要翻译：本发明的目的是在短时间内进行剥离处理。在剥离层暴露于蚀刻气体的气氛的同时进行剥离。或者，在蚀刻气体的气氛中将用于剥离层的蚀刻气体吹向剥离层的同时进行剥离。具体地说，将蚀刻气体吹向待剥离的部分，同时从基板上撕下被剥离层。或者，在用于剥离层的蚀刻剂中进行剥离，同时向剥离层供给蚀刻剂。

3. 发明授权

US09176353B2 Liquid crystal display device 有权
公开(公告)号：US09176353B2
公开(公告)日：2015-11-03
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

4. 发明授权

US08648343B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08648343B2
公开(公告)日：2014-02-11
申请号：US12839519
申请日：2010-07-20
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Ikuko Kawamata
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/124
摘要： An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.
摘要翻译：目的是提高半导体器件的开口率。半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且使用氧化物半导体形成沟道层，以及使用金属。显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源电极和漏电极，并且使用氧化物半导体形成半导体层，以及使用氧化物导体形成的显示部分布线。设置在半导体器件中的薄膜晶体管形成有使用多色调掩模形成的抗蚀剂掩模。

5. 发明授权

US08552423B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08552423B2
公开(公告)日：2013-10-08
申请号：US12835903
申请日：2010-07-14
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
IPC分类号： H01L29/10
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译：半导体器件的开口率提高。驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层层。栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

6. 发明授权

US08421135B2 Semiconductor device, and manufacturing method thereof 有权
公开(公告)号：US08421135B2
公开(公告)日：2013-04-16
申请号：US12323724
申请日：2008-11-26
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara , Saishi Fujikawa
IPC分类号： H01L31/062
CPC分类号： H01L27/1222 , G02F1/13454 , G02F1/13458 , H01L27/124 , H01L27/156 , H01L29/6675 , H01L29/66765
摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.

7. 发明授权

US08350469B2 Light emitting device having organic compound 有权
标题翻译：具有有机化合物的发光元件
公开(公告)号：US08350469B2
公开(公告)日：2013-01-08
申请号：US13280632
申请日：2011-10-25
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： H01L51/00
CPC分类号： H01L51/529 , H01L51/0042 , H01L51/005 , H01L51/0062 , H01L51/007
摘要： When a light emitting element is actuated to allow the light emission, the generation of Joule heat occurs, leading to the decomposition or crystallization of an organic compound to cause the degradation of the light emitting device. Therefore, a light emitting element of the present invention is provided for effecting removing or decreasing the generation of heat. In the present invention, between two electrodes, layers having organic compounds and carbon-based thin films are alternatively laminated one after another for stepping down the driving voltage in the light emitting element using the tunnel effect. In addition, a carbon-based thin film is placed on a film containing an organic compound, so that it prevents the electric field from being locally concentrated and also prevents the generation of short-circuit between the anode and the cathode.
摘要翻译：当致动发光元件以允许发光时，发生焦耳热的产生，导致有机化合物的分解或结晶，导致发光器件的劣化。因此，提供本发明的发光元件用于实现除去或减少热的产生。在本发明中，在两个电极之间，交替层叠具有有机化合物的层和碳基薄膜，以使用隧道效应降低发光元件中的驱动电压。此外，将碳基薄膜放置在含有有机化合物的膜上，防止电场局部浓缩，并防止阳极与阴极之间产生短路。

8. 发明授权

US08344363B2 Semiconductor device and method of manufacturing same 有权
公开(公告)号：US08344363B2
公开(公告)日：2013-01-01
申请号：US12750325
申请日：2010-03-30
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01L35/24
CPC分类号： H01L51/5209 , G01J1/4228 , H01L25/167 , H01L27/3206 , H01L27/3211 , H01L27/322 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L33/0041 , H01L51/0096 , H01L51/5206 , H01L51/5218 , H01L51/5221 , H01L51/5234 , H01L51/524 , H01L51/5271 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2251/5315
摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

9. 发明申请

US20120214263A1 Fabrication System and Manufacturing Method of Light Emitting Device 有权
标题翻译：发光装置制造系统及制造方法
公开(公告)号：US20120214263A1
公开(公告)日：2012-08-23
申请号：US13459122
申请日：2012-04-28
申请人： Shunpei Yamazaki , Hideaki Kuwabara , Masakazu Murakami
发明人： Shunpei Yamazaki , Hideaki Kuwabara , Masakazu Murakami
IPC分类号： H01L33/00
CPC分类号： H01L51/56 , C23C14/046 , C23C14/12 , C23C14/246 , C23C14/564 , H01L27/3244 , H01L33/44
摘要： The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.
摘要翻译：本发明提供一种可以更有效地使用EL材料的成膜系统的气相沉积方法和气相沉积系统，并且形成具有高生产率的均匀性优异的EL材料。根据本发明，在成膜室内部，将密封蒸发材料的多个容器以一定间距移动到基板上的矩形状的蒸发源保持器和蒸发材料蒸镀在基板上。此外，蒸发源保持器的纵向方向可以在基板的一侧倾斜，同时蒸发源保持器被移动。此外，优选的是，蒸镀源夹持器在气相沉积期间的移动方向与形成TFT的激光束的扫描方向不同。

10. 发明授权

US08198630B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08198630B2
公开(公告)日：2012-06-12
申请号：US12789382
申请日：2010-05-27
申请人： Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
发明人： Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L27/1222 , G02F1/133345 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/13452 , G02F1/13458 , G02F1/136204 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , G02F2201/123 , G02F2202/103 , G02F2202/105 , G02F2202/28 , H01L21/67161 , H01L21/67167 , H01L21/67207 , H01L21/67225 , H01L21/67236 , H01L27/1218 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/1288 , H01L29/66765 , H01L29/78669
摘要： A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode, the source region and the drain region by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized, FIG. 2.
摘要翻译：在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。通过在三个光刻步骤中通过使用三个光掩模来执行像素电极，源极区域和漏极区域的形成，制备具有反向交错型n沟道TFT的像素TFT部分的液晶显示装置和存储可以实现电容器， 2。

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