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1. 发明授权

US08911610B2 Process for producing metallic lithium 有权
标题翻译：金属锂制造方法
公开(公告)号：US08911610B2
公开(公告)日：2014-12-16
申请号：US13608561
申请日：2012-09-10
申请人： Eiji Nakamura , Hiroaki Takata , Yukihiro Yokoyama , Hiroshi Miyamoto
发明人： Eiji Nakamura , Hiroaki Takata , Yukihiro Yokoyama , Hiroshi Miyamoto
IPC分类号： C25C3/02 , C01D15/04
CPC分类号： C01D15/04 , C25C3/02
摘要： Provided is a safe and efficient method for producing lithium metal which facilitates efficient production of anhydrous lithium chloride without corrosion of the system materials by chlorine gas or molten lithium carbonate, and which allows production of lithium metal by molten salt electrolysis of the produced anhydrous lithium chloride as a raw material. The method includes the steps of (A) contacting and reacting lithium carbonate and chlorine gas in a dry process to produce anhydrous lithium chloride, and (B) subjecting the raw material for electrolysis containing the anhydrous lithium chloride to molten salt electrolysis under such conditions as to produce lithium metal, wherein the chlorine gas generated by the molten salt electrolysis in step (B) is used as the chlorine gas in step (A) to continuously perform steps (A) and (B).
摘要翻译：提供了一种安全有效的生产锂金属的方法，其有助于无氯氯化物的有效生产，而不会由于氯气或熔融碳酸锂而使系统材料腐蚀，并且通过熔融盐电解生产无机氯化锂的锂金属作为原料。该方法包括以下步骤：（A）在干法中使碳酸锂和氯气接触并反应生成无水氯化锂;（B）将含有无水氯化锂的电解原料进行熔融盐电解，为了生产锂金属，其中在步骤（B）中通过熔融盐电解产生的氯气用作步骤（A）中的氯气，以连续进行步骤（A）和（B）。

2. 发明申请

US20100051470A1 PROCESS FOR PRODUCING METALLIC LITHIUM 审中-公开
标题翻译：生产金属锂的工艺
公开(公告)号：US20100051470A1
公开(公告)日：2010-03-04
申请号：US12513030
申请日：2007-11-02
申请人： Eiji Nakamura , Hiroaki Takata , Yukihiro Yokoyama , Hiroshi Miyamoto
发明人： Eiji Nakamura , Hiroaki Takata , Yukihiro Yokoyama , Hiroshi Miyamoto
IPC分类号： C25C3/02
CPC分类号： C01D15/04 , C25C3/02
摘要： Provided is a safe and efficient method for producing lithium metal which facilitates efficient production of anhydrous lithium chloride without corrosion of the system materials by chlorine gas or molten lithium carbonate, and which allows production of lithium metal by molten salt electrolysis of the produced anhydrous lithium chloride as a raw material. The method includes the steps of (A) contacting and reacting lithium carbonate and chlorine gas in a dry process to produce anhydrous lithium chloride, and (B) subjecting the raw material for electrolysis containing the anhydrous lithium chloride to molten salt electrolysis under such conditions as to produce lithium metal, wherein the chlorine gas generated by the molten salt electrolysis in step (B) is used as the chlorine gas in step (A) to continuously perform steps (A) and (B).
摘要翻译：提供了一种安全有效的生产锂金属的方法，其有助于无氯氯化物的有效生产，而不会由于氯气或熔融碳酸锂而使系统材料腐蚀，并且通过熔融盐电解生产无机氯化锂的锂金属作为原料。该方法包括以下步骤：（A）在干法中使碳酸锂和氯气接触并反应生成无水氯化锂;（B）将含有无水氯化锂的电解原料进行熔融盐电解，为了生产锂金属，其中在步骤（B）中通过熔融盐电解产生的氯气用作步骤（A）中的氯气，以连续进行步骤（A）和（B）。

3. 发明授权

US08305365B2 Mobile device and area-specific processing executing method 有权
标题翻译：移动设备和区域特定处理执行方法
公开(公告)号：US08305365B2
公开(公告)日：2012-11-06
申请号：US12427928
申请日：2009-04-22
申请人： Hiroaki Takata
发明人： Hiroaki Takata
IPC分类号： G09G5/00 , G06F3/048
CPC分类号： G06F3/0481 , G06F1/1626 , G06F1/1686 , G06F3/0346 , G06F2200/1637
摘要： A mobile device includes a control unit, a storage unit, a display unit, and a displacement detecting unit that detects displacement of a physical value caused when the mobile device moves, wherein the control unit includes an icon displaying unit that displays the icon in the display area, an icon moving unit that moves the icon displayed, in the display area and based on the displacement of the physical value, an area determining unit that compares coordinates of the icon moved and displayed in the display area to the specific area to thereby determine whether the icon is in the specific area, and an area-specific processing executing unit that retrieves the area-specific processing corresponding to the specific area and executes the area-specific processing when the area determining unit determines that the icon is in the specific area.
摘要翻译：移动装置包括控制单元，存储单元，显示单元和位移检测单元，其检测当移动设备移动时引起的物理值的位移，其中控制单元包括图标显示单元，该图标显示单元将图标显示在显示区域，图标移动单元，其将显示的图标移动到显示区域中并且基于物理值的位移;区域确定单元，其将在显示区域中移动和显示的图标的坐标与特定区域进行比较，从而确定图标是否在特定区域中;以及区域特定处理执行单元，其检索与特定区域相对应的区域特定处理，并且当区域确定单元确定图标处于特定区域特定处理时执行区域特定处理区。

4. 发明授权

US09633769B2 Magnetic refrigeration material 有权
公开(公告)号：US09633769B2
公开(公告)日：2017-04-25
申请号：US14005081
申请日：2012-03-14
申请人： Hiroaki Takata , Toshio Irie
发明人： Hiroaki Takata , Toshio Irie
IPC分类号： F25B21/00 , H01F1/01 , C22C38/00 , C22C38/02 , C22C38/10 , C22C38/06 , C22C38/14 , C22C38/18 , C21D1/74 , C22C1/02 , C22C33/02
CPC分类号： H01F1/015 , C21D1/74 , C22C1/02 , C22C33/0278 , C22C38/002 , C22C38/005 , C22C38/02 , C22C38/06 , C22C38/10 , C22C38/14 , C22C38/18 , C22C2202/02 , F25B21/00 , F25B2321/002
摘要： Provided is a magnetic refrigeration material which has a Curie temperature near room temperature or higher, and provides refrigeration performance well over that of conventional materials when subjected to a field change up to 2 Tesla, which is assumed to be achievable with a permanent magnet. The magnetic refrigeration material is of a composition represented by the formula La1-fREf(Fe1-a-b-c-d-eSiaCObXcYdZe)13 (RE: at least one of rare earth elements including Sc and Y and excluding La; X: Ga and/or Al; Y: at least one of Ge, Sn, B, and C; Z: at least one of Ti, V, Cr, Mn, Ni, Cu, Zn, and Zr; 0.03≦a≦0.17, 0.003≦b≦0.06, 0.02≦c≦0.10, 0≦d≦0.04, 0≦e≦0.04, 0≦f≦0.50), and has Tc of not lower than 220 K and not higher than 276 K, and the maximum (−ΔSmax) of magnetic entropy change (−ΔSM) of the material when subjected to a field change up to 2 Tesla is not less than 5 J/kgK.

5. 发明授权

US08094242B2 Object management apparatus, mobile terminal, and object management method 有权
标题翻译：对象管理装置，移动终端和对象管理方法
公开(公告)号：US08094242B2
公开(公告)日：2012-01-10
申请号：US12432059
申请日：2009-04-29
申请人： Hiroaki Takata
发明人： Hiroaki Takata
IPC分类号： H04N5/74
CPC分类号： G06F1/1626 , G06F1/1686 , G06F2200/1637
摘要： An object management apparatus comprising an image photographing unit, a storage unit, and a control unit communicably connected to at least one operation target device and a mobile terminal including a displacement detecting unit that detects a displacement of a physical quantity caused when the mobile terminal moves and a display unit via a network, wherein the storage unit includes, a display object storing unit, an operation target object storing unit, and a processing command storing unit, and the control unit includes, a display object transmitting unit, a mobile terminal position acquiring unit, an region determining unit, an operation target object determining unit, a processing command determining physical quantity displacement receiving unit, a display object acquiring unit, a processing command searching unit, and a processing command executing unit.
摘要翻译：一种物体管理装置，包括图像拍摄单元，存储单元和可通信地连接到至少一个操作对象装置的控制单元和包括位移检测单元的移动终端，移动终端检测移动终端移动时引起的物理量的位移以及显示单元，其中所述存储单元包括显示对象存储单元，操作对象存储单元和处理命令存储单元，并且所述控制单元包括显示对象发送单元，移动终端位置获取单元，区域确定单元，操作对象确定单元，处理命令确定物理量位移接收单元，显示对象获取单元，处理命令搜索单元和处理命令执行单元。

6. 发明授权

US5441913A Process of making a semiconductor epitaxial substrate 失效
标题翻译：制造半导体外延基板的工艺
公开(公告)号：US5441913A
公开(公告)日：1995-08-15
申请号：US266680
申请日：1994-06-28
申请人： Masahiko Hata , Noboru Fukuhara , Hiroaki Takata , Katsumi Inui
发明人： Masahiko Hata , Noboru Fukuhara , Hiroaki Takata , Katsumi Inui
IPC分类号： H01L21/203 , H01L21/205 , H01L21/20
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/0262 , H01L21/02631
摘要： A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an In.sub.y Ga.sub.(1-y) As (0
摘要翻译：一种半导体外延基板及其制造方法，所述半导体外延基板包括其上具有In y Ga（1-y）As（0

7. 发明授权

US4976216A Apparatus for vapor-phase growth 失效
标题翻译：气相生长装置
公开(公告)号：US4976216A
公开(公告)日：1990-12-11
申请号：US269348
申请日：1988-11-10
申请人： Takayoshi Maeda , Masahiko Hata , Yasunari Zempo , Noboru Fukuhara , Hiroaki Takata
发明人： Takayoshi Maeda , Masahiko Hata , Yasunari Zempo , Noboru Fukuhara , Hiroaki Takata
IPC分类号： H01L21/205 , C23C16/458 , C30B25/02 , C30B25/08 , C30B25/12 , C30B25/14
CPC分类号： C30B25/14 , C23C16/4588 , C30B25/02 , C30B25/08 , C30B25/12 , C30B29/42
摘要： In an apparatus for vapor-phase growth which comprises a reactor having an inlet for the introduction of the gas containing a source material on its top and a susceptor provided in the downstream portion of the reactor, the improvement wherein the susceptor is generally in a conical or polygonal pyramid form consisting of an upper rectifying portion and a lower substrate holding portion, with the diameter of the susceptor in its lower portion increasing by a greater degree than in its upper portion.
摘要翻译：在用于气相生长的装置中，其包括具有用于引入其顶部具有源材料的气体的入口和设置在反应器的下游部分中的基座的反应器，其中基座大体上为圆锥形或由上部整流部分和下部基板保持部分组成的多边形棱锥形状，其下部中的基座的直径比其上部增加更大的程度。

8. 发明申请

US20100045570A1 INFORMATION PROCESSING DEVICE, AND TRANSPARENT DISPLAY ELEMENT CONTROL METHOD AND PROGRAM 有权
标题翻译：信息处理设备和透明显示元件控制方法和程序
公开(公告)号：US20100045570A1
公开(公告)日：2010-02-25
申请号：US12547101
申请日：2009-08-25
申请人： Hiroaki Takata
发明人： Hiroaki Takata
IPC分类号： G09G5/00
CPC分类号： G06F3/0481 , G06F2203/04804 , G09G5/14 , G09G2340/12
摘要： Provided is an information processing device which includes: a transparent display element display unit (21) that displays a transparent window in association with display position information for specifying a display position on a display (2), the transparent window being displayed as transparent at least in part such that display information covered with the transparent window is visually recognized through the transparent window; an information acquisition unit (22) that acquires the display information covered with the transparent window based on the display position information; a superimposition detection unit (27) that detects that a plurality of the transparent windows are in a positional relation in which the plurality of the transparent windows overlap one another to be displayed, based on the display position information; and a processing execution unit (28) that executes, in a case where the superimposition of the plurality of the transparent windows is detected, predetermined processing based on the display information acquired by the information acquisition unit (22).
摘要翻译：提供了一种信息处理装置，其包括：透明显示元件显示单元，其与用于指定显示器（2）上的显示位置的显示位置信息相关联地显示透明窗口，所述透明窗口至少显示为透明部分地使得透明窗口覆盖的显示信息通过透明窗口被视觉识别; 信息获取单元，基于所述显示位置信息获取被所述透明窗口覆盖的显示信息; 基于显示位置信息，检测多个透明窗口处于多个透明窗口彼此重叠的位置关系的叠加检测单元（27）; 以及处理执行单元（28），其在检测到所述多个透明窗口的叠加的情况下执行基于由所述信息获取单元（22）获取的显示信息的预定处理。

9. 发明授权

US07175721B2 Method for preparing Cr-Ti-V type hydrogen occlusion alloy 失效
标题翻译：制备Cr-Ti-V型吸氢合金的方法
公开(公告)号：US07175721B2
公开(公告)日：2007-02-13
申请号：US10476070
申请日：2002-04-25
申请人： Hiroaki Takata , Yutaka Oka , Junichi Nakagawa , Akira Neoda
发明人： Hiroaki Takata , Yutaka Oka , Junichi Nakagawa , Akira Neoda
IPC分类号： C22C14/00 , C22C1/02 , C22F1/18 , C22F1/16
CPC分类号： H01M4/383 , B22F9/008 , B22F9/04 , C01B3/0031 , C22C1/02 , C22C27/06 , H01M8/04216 , Y02E60/327
摘要： The invention relates to a method for producing high-performance Cr—Ti—V hydrogen storage alloys utilizing a thermit process, whereby residence of adversely affecting impurities is inhibited, addition of not less than 10 at % of Ti as an alloy component is realized, and thermal burden on the crucible used in the method is reduced. The method includes the steps of: (A) providing an alloy material (1) comprising a Cr oxide, a V oxide, and a reducing agent Al, and an alloy material (2) comprising Ti; (B) placing the alloy materials in a crucible for thermit reduction so that the alloy material (1) is placed above the alloy material (2); (C) igniting the alloy material (1) placed in step (B) and melting all metal elements contained in the alloy materials the with heat of the thermit reaction of the alloy material (1); and (D) making the alloy melt obtained in step (C) into an alloy.
摘要翻译：本发明涉及一种利用热处理制备高性能Cr-Ti-V储氢合金的方法，其中抑制不利影响杂质的停留，实现了不少于10at％的Ti作为合金成分，并且减少了在该方法中使用的坩埚上的热负荷。该方法包括以下步骤：（A）提供包含Cr氧化物，V氧化物和还原剂Al的合金材料（1）和包含Ti的合金材料（2）（B）将合金材料放置在用于还原的坩埚中，使得合金材料（1）放置在合金材料（2）上方; （C）点燃放置在步骤（B）中的合金材料（1），并且通过合金材料（1）的热反应的热量熔化包含在合金材料中的所有金属元素; 和（D）将步骤（C）中获得的合金熔体制成合金。

10. 发明申请

US20140007593A1 MAGNETIC REFRIGERATION MATERIAL 有权
标题翻译：磁性制冷材料
公开(公告)号：US20140007593A1
公开(公告)日：2014-01-09
申请号：US14005081
申请日：2012-03-14
申请人： Hiroaki Takata , Toshio Irie
发明人： Hiroaki Takata , Toshio Irie
IPC分类号： H01F1/01 , F25B21/00
CPC分类号： H01F1/015 , C21D1/74 , C22C1/02 , C22C33/0278 , C22C38/002 , C22C38/005 , C22C38/02 , C22C38/06 , C22C38/10 , C22C38/14 , C22C38/18 , C22C2202/02 , F25B21/00 , F25B2321/002
摘要： Provided is a magnetic refrigeration material which has a Curie temperature near room temperature or higher, and provides refrigeration performance well over that of conventional materials when subjected to a field change up to 2 Tesla, which is assumed to be achievable with a permanent magnet. The magnetic refrigeration material is of a composition represented by the formula La1-fREf(Fe1-a-b-c-d-eSiaCObXcYdZe)13 (RE: at least one of rare earth elements including Sc and Y and excluding La; X: Ga and/or Al; Y: at least one of Ge, Sn, B, and C; Z: at least one of Ti, V, Cr, Mn, Ni, Cu, Zn, and Zr; 0.03≦a≦0.17, 0.003≦b≦0.06, 0.02≦c≦0.10, 0≦d≦0.04, 0≦e≦0.04, 0≦f≦0.50), and has Tc of not lower than 220 K and not higher than 276 K, and the maximum (−ΔSmax) of magnetic entropy change (−ΔSM) of the material when subjected to a field change up to 2 Tesla is not less than 5 J/kgK.
摘要翻译：本发明提供一种磁性制冷材料，其具有接近室温或更高的居里温度，并且当经过场效应达到2特斯拉时，其制冷性能优于常规材料，这被认为可以用永磁体实现。磁致冷材料为式La1-fREf（Fe1-abcd-eSiaCObXcYdZe）13（RE：包括Sc和Y，除La之外的至少一种稀土元素，X：Ga和/或Al; Y ：Ge，Sn，B和C中的至少一种; Z：Ti，V，Cr，Mn，Ni，Cu，Zn和Zr中的至少一种;0.03≤a≤0.17,0.003b@ 0.06,0.02 并且具有不低于220K且不高于276K的Tc，并且磁熵的最大值（-DeltaSmax）当进行场特性变化达2特斯拉时材料的变化（-DeltaSM）不小于5J / kgK。

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