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1. 发明授权

US5406445A Thin film capacitor and method of manufacturing the same 失效
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US5406445A
公开(公告)日：1995-04-11
申请号：US216966
申请日：1994-03-24
申请人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Masumi Hattori , Ryoichi Takayama , Satoru Fujii
发明人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Masumi Hattori , Ryoichi Takayama , Satoru Fujii
IPC分类号： H01G4/20 , H01L29/04 , H01L23/48
CPC分类号： H01G4/20 , H01L2224/4918 , H01L2924/181
摘要： A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.
摘要翻译：将取向为（100）面的NaCl氧化物薄层或取向为（100）面的尖晶石氧化物薄层，朝向（100）面的钙钛矿电介质薄层和金属电极依次层压在金属电极上，从而提供薄膜电容器。或者，通过依次层叠取向于（100）面的氧化锌薄膜或取向为（100）面的尖晶石氧化物薄层，将铂薄层作为朝向（100）面的下部电极而制造薄膜电容器取向为（100）面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。当采用真空沉积法，溅射法，CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层，尖晶石氧化物薄层和钙钛矿电介质薄层形成金属电极。

2. 发明授权

US5663089A Method for producing a laminated thin film capacitor 失效
标题翻译：叠层薄膜电容器的制造方法
公开(公告)号：US5663089A
公开(公告)日：1997-09-02
申请号：US465350
申请日：1995-06-05
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01L21/70
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

3. 发明授权

US5459635A Laminated thin film capacitor and method for producing the same 失效
标题翻译：层叠薄膜电容器及其制造方法
公开(公告)号：US5459635A
公开(公告)日：1995-10-17
申请号：US215816
申请日：1994-03-22
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01G4/10
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

4. 发明申请

US20050087689A1 Pyroelectric device, method for manufacturing same and infrared sensor 审中-公开
标题翻译：热电装置，制造方法和红外传感器
公开(公告)号：US20050087689A1
公开(公告)日：2005-04-28
申请号：US10503328
申请日：2003-12-04
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
IPC分类号： G01J5/34 , H01L37/02 , G01J5/00
CPC分类号： G01J5/34 , H01L37/025
摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0
摘要翻译：由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4））O 3（0

5. 发明授权

US5866238A Ferroelectric thin film device and its process 失效
标题翻译：铁电薄膜器件及其工艺
公开(公告)号：US5866238A
公开(公告)日：1999-02-02
申请号：US811301
申请日：1997-03-04
申请人： Ryoichi Takayama , Yoshihiro Tomita , Satoru Fujii , Masayuki Okano , Hideo Torii , Eiji Fujii , Atsushi Tomozawa
发明人： Ryoichi Takayama , Yoshihiro Tomita , Satoru Fujii , Masayuki Okano , Hideo Torii , Eiji Fujii , Atsushi Tomozawa
IPC分类号： H01L37/02 , H01L41/24 , B32B3/00
CPC分类号： H01L37/02 , H01L41/1875 , H01L41/316 , H01L41/319 , Y10T428/24917 , Y10T428/24926
摘要： A first ferroelectric thin film device is provided with a first substrate consisting of polycrystal, amorphous material or metal material and a first ferroelectric thin film formed on the first substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 70.times.10.sup.-7 /.degree.C. or more. At least 75% of crystal axes of the first ferroelectric thin film are oriented in -direction. A second ferroelectric thin film device is provided with a second substrate consisting of amorphous material and a second ferroelectric thin film formed on the second substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 50.times.10.sup.-7 /.degree.C. or less. At least 75% of crystal axes of the second ferroelectric thin film are oriented in direction.
摘要翻译：第一铁电薄膜器件设置有由多晶，非晶材料或金属材料组成的第一衬底和形成在第一衬底上的第一铁电薄膜。从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为70×10 -7 /℃以上。第一铁电薄膜的至少75％的晶轴取向为<001>方向。第二铁电薄膜器件设置有由非晶材料构成的第二衬底和形成在第二衬底上的第二铁电薄膜。从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为50×10 -7 /℃以下。第二铁电薄膜的至少75％的晶轴取向为<100>方向。

6. 发明授权

US5717157A Ferroelectric thin film and method of manufacturing the same 失效
标题翻译：铁电薄膜及其制造方法
公开(公告)号：US5717157A
公开(公告)日：1998-02-10
申请号：US351216
申请日：1994-11-30
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
IPC分类号： C04B35/472 , C23C14/08 , C23C14/34 , C30B23/02 , H01L37/02 , H01L41/316 , H01L35/22 , C04B35/491
CPC分类号： H01L41/316 , C04B35/472 , C23C14/08 , C23C14/3414 , C30B23/02 , C30B29/32 , H01L37/025
摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, �(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.multidot.MgO!, where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.
摘要翻译：铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。以这种方式，可以制造含有例如[（1-x）xPb1-yLayTi1-y / 4O3 + xxMgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。

7. 发明授权

US5989395A Ferroelectric thin film and method of manufacturing the same 失效
标题翻译：铁电薄膜及其制造方法
公开(公告)号：US5989395A
公开(公告)日：1999-11-23
申请号：US730315
申请日：1996-10-11
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
IPC分类号： C04B35/472 , C23C14/08 , C23C14/34 , C30B23/02 , H01L37/02 , H01L41/316
CPC分类号： H01L41/316 , C04B35/472 , C23C14/08 , C23C14/3414 , C30B23/02 , C30B29/32 , H01L37/025
摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.MgO], where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.
摘要翻译：铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。以这种方式，可以制造含有例如[（1-x）.Pb1-yLayTi1-y / 4O3 + x.MgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。

8. 发明授权

US06326621B1 Infrared radiation detector and method of manufacturing the same 失效
标题翻译：红外辐射探测器及其制造方法
公开(公告)号：US06326621B1
公开(公告)日：2001-12-04
申请号：US09323730
申请日：1999-06-01
申请人： Takeshi Kamada , Ryoichi Takayama , Satoru Fujii , Atsushi Tomozawa , Isaku Kanno
发明人： Takeshi Kamada , Ryoichi Takayama , Satoru Fujii , Atsushi Tomozawa , Isaku Kanno
IPC分类号： G01J502
CPC分类号： G01J5/20 , G01J5/34
摘要： The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.
摘要翻译：本发明提供了一种紧凑且高性能的红外辐射探测器。红外辐射检测器包含：基板; 以及选自热电型红外线辐射检测器单元，电阻辐射热计型红外线检测器单元和铁电测辐射热计型红外线检测器单元的至少两个红外线检测器单元，所述红外线检测器单元设置在同一侧的基底。

9. 发明授权

US5868948A Method for fabricating dielectric device 失效
标题翻译：电介质器件制造方法
公开(公告)号：US5868948A
公开(公告)日：1999-02-09
申请号：US724654
申请日：1996-10-01
申请人： Satoru Fujii , Ryoichi Takayama , Takeshi Kamada , Atsushi Tomozawa
发明人： Satoru Fujii , Ryoichi Takayama , Takeshi Kamada , Atsushi Tomozawa
IPC分类号： H01G4/12 , H01L37/02 , B44C1/22
CPC分类号： H01G4/12 , H01L37/02
摘要： A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.
摘要翻译：公开了一种用于制造包括电容器，热电型红外线检测器等的电介质器件的方法。该方法包括以下步骤：利用由氢氟酸和氧化剂组成的蚀刻剂来蚀刻形成在基板上的电介质膜以形成预定图案，并且用含有第一处理溶液的蚀刻层处理蚀刻层去除残留物还原剂，随后用含有酸的第二处理溶液。

10. 发明授权

US07312558B2 Piezoelectric element, ink jet head, angular velocity sensor, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器和喷墨记录装置
公开(公告)号：US07312558B2
公开(公告)日：2007-12-25
申请号：US11097924
申请日：2005-04-01
申请人： Satoru Fujii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii
发明人： Satoru Fujii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii
IPC分类号： H01L41/187 , H01L41/04 , H01L41/16
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1645 , B41J2/1646 , G01C19/5607 , H01L41/0815 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.
摘要翻译：在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16）并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成，的添加量为1摩尔％〜50摩尔％。形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

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