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1. 发明授权

US5663089A Method for producing a laminated thin film capacitor 失效
标题翻译：叠层薄膜电容器的制造方法
公开(公告)号：US5663089A
公开(公告)日：1997-09-02
申请号：US465350
申请日：1995-06-05
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01L21/70
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

2. 发明授权

US5406445A Thin film capacitor and method of manufacturing the same 失效
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US5406445A
公开(公告)日：1995-04-11
申请号：US216966
申请日：1994-03-24
申请人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Masumi Hattori , Ryoichi Takayama , Satoru Fujii
发明人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Masumi Hattori , Ryoichi Takayama , Satoru Fujii
IPC分类号： H01G4/20 , H01L29/04 , H01L23/48
CPC分类号： H01G4/20 , H01L2224/4918 , H01L2924/181
摘要： A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.
摘要翻译：将取向为（100）面的NaCl氧化物薄层或取向为（100）面的尖晶石氧化物薄层，朝向（100）面的钙钛矿电介质薄层和金属电极依次层压在金属电极上，从而提供薄膜电容器。或者，通过依次层叠取向于（100）面的氧化锌薄膜或取向为（100）面的尖晶石氧化物薄层，将铂薄层作为朝向（100）面的下部电极而制造薄膜电容器取向为（100）面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。当采用真空沉积法，溅射法，CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层，尖晶石氧化物薄层和钙钛矿电介质薄层形成金属电极。

3. 发明授权

US5459635A Laminated thin film capacitor and method for producing the same 失效
标题翻译：层叠薄膜电容器及其制造方法
公开(公告)号：US5459635A
公开(公告)日：1995-10-17
申请号：US215816
申请日：1994-03-22
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01G4/10
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

4. 发明授权

US5521454A Surface wave filter element 失效
标题翻译：表面波滤芯
公开(公告)号：US5521454A
公开(公告)日：1996-05-28
申请号：US302011
申请日：1994-09-09
申请人： Masumi Hattori , Hideo Torii , Masaki Aoki , Eiji Fujii , Atsushi Tomozawa , Ryoichi Takayama , Ken Kamata , Yasuhiko Horio
发明人： Masumi Hattori , Hideo Torii , Masaki Aoki , Eiji Fujii , Atsushi Tomozawa , Ryoichi Takayama , Ken Kamata , Yasuhiko Horio
IPC分类号： H03H3/08 , H03H9/02 , H03H9/00
CPC分类号： H03H3/08 , H03H9/02574
摘要： A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.
摘要翻译：表面波滤波器元件包括弹性表面波在其上传播的部分。该部分包括用于输入和输出信号的压电材料，非晶硼层或板和IDT电极。压电材料是通过溅射，离子束沉积或化学气相沉积形成的由ZnO，LiNbO 3或LiTaO 3制成的膜。无定形硼层或硼板可以形成在由无机材料制成的基板上。硼材料使用电子束沉积，离子束沉积或化学气相沉积形成。

5. 发明申请

US20050087689A1 Pyroelectric device, method for manufacturing same and infrared sensor 审中-公开
标题翻译：热电装置，制造方法和红外传感器
公开(公告)号：US20050087689A1
公开(公告)日：2005-04-28
申请号：US10503328
申请日：2003-12-04
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
IPC分类号： G01J5/34 , H01L37/02 , G01J5/00
CPC分类号： G01J5/34 , H01L37/025
摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0
摘要翻译：由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4））O 3（0

6. 发明授权

US5866238A Ferroelectric thin film device and its process 失效
标题翻译：铁电薄膜器件及其工艺
公开(公告)号：US5866238A
公开(公告)日：1999-02-02
申请号：US811301
申请日：1997-03-04
申请人： Ryoichi Takayama , Yoshihiro Tomita , Satoru Fujii , Masayuki Okano , Hideo Torii , Eiji Fujii , Atsushi Tomozawa
发明人： Ryoichi Takayama , Yoshihiro Tomita , Satoru Fujii , Masayuki Okano , Hideo Torii , Eiji Fujii , Atsushi Tomozawa
IPC分类号： H01L37/02 , H01L41/24 , B32B3/00
CPC分类号： H01L37/02 , H01L41/1875 , H01L41/316 , H01L41/319 , Y10T428/24917 , Y10T428/24926
摘要： A first ferroelectric thin film device is provided with a first substrate consisting of polycrystal, amorphous material or metal material and a first ferroelectric thin film formed on the first substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 70.times.10.sup.-7 /.degree.C. or more. At least 75% of crystal axes of the first ferroelectric thin film are oriented in -direction. A second ferroelectric thin film device is provided with a second substrate consisting of amorphous material and a second ferroelectric thin film formed on the second substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 50.times.10.sup.-7 /.degree.C. or less. At least 75% of crystal axes of the second ferroelectric thin film are oriented in direction.
摘要翻译：第一铁电薄膜器件设置有由多晶，非晶材料或金属材料组成的第一衬底和形成在第一衬底上的第一铁电薄膜。从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为70×10 -7 /℃以上。第一铁电薄膜的至少75％的晶轴取向为<001>方向。第二铁电薄膜器件设置有由非晶材料构成的第二衬底和形成在第二衬底上的第二铁电薄膜。从形成铁电薄膜的室温到温度的基板的热膨胀系数的平均值为50×10 -7 /℃以下。第二铁电薄膜的至少75％的晶轴取向为<100>方向。

7. 发明授权

US07478558B2 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US07478558B2
公开(公告)日：2009-01-20
申请号：US11362583
申请日：2006-02-24
申请人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
发明人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
IPC分类号： G01C19/00 , B41J2/045 , H01L41/04
CPC分类号： H01L41/0815 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1646 , B41J2002/14491 , B41J2202/03 , G01C19/5607 , H01L41/1876 , H01L41/316 , Y10T29/49401
摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.
摘要翻译：在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置有（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，（100） - 或（001） - 位于第一电极层14的靠近取向控制层15的一个表面上的钛或氧化钛上，并且沿与厚度方向垂直的方向的区域的横截面积沿着方向远离第一电极层14朝向相对侧。此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

8. 发明授权

US06475604B1 Thin film thermistor element and method for the fabrication of thin film thermistor element 有权
标题翻译：薄膜热敏电阻元件及制造薄膜热敏电阻元件的方法
公开(公告)号：US06475604B1
公开(公告)日：2002-11-05
申请号：US09584768
申请日：2000-06-01
申请人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
发明人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
IPC分类号： H01C700
CPC分类号： H01C17/12 , H01C7/023 , Y10T428/24917
摘要： A thin film thermistor element 10 is formed by forming on a backing substrate 11 of alumina a thermistor thin film 12 and a pair of comb electrodes 13 and 14 formed of a thin film of Pt. The thermistor thin film 12, which is formed of, for example, complex oxide of Mn—Co—Ni, has either a spinel type crystal structure which is priority oriented or oriented mainly in a (100) surface or a bixbite type crystal structure which is priority oriented in a (100) or (111) surface. Alternatively, the thermistor thin film is formed of LaCoO3 and has a rhombohedral bixbite type crystal structure. This makes it possible to hold the variation in resistance value low thereby to achieve high accuracy, and the deterioration with time can be held low and the high temperature durability can be improved, for the achievement of high reliability.
摘要翻译：通过在氧化铝的背衬基板11上形成热敏电阻薄膜12和由Pt的薄膜形成的一对梳状电极13和14来形成薄膜热敏电阻元件10。由例如Mn-Co-Ni的复合氧化物形成的热敏电阻薄膜12具有尖晶石型晶体结构，其优先取向或主要在（100）表面取向或双键型晶体结构中，其中，在（100）或（111）表面优先考虑。或者，热敏电阻薄膜由LaCoO 3形成，并且具有菱形双峰型晶体结构。这使得可以将电阻值的变化保持为低，从而实现高精度，并且，为了实现高可靠性，能够将劣化随时间变低，提高耐高温性。

9. 发明授权

US06081182A Temperature sensor element and temperature sensor including the same 失效
标题翻译：温度传感器元件和温度传感器包括相同的
公开(公告)号：US06081182A
公开(公告)日：2000-06-27
申请号：US970496
申请日：1997-11-14
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Ryoichi Takayama
IPC分类号： G01K7/22 , H01C7/04 , H01C17/30 , H01L7/02
CPC分类号： G01K7/223 , H01C17/30 , H01C7/041 , H01C7/043
摘要： The present invention provides a temperature sensor element having excellent heat resistance, quick heat response, stable resistance, and high reliability with a less variation in resistance against time. The temperature sensor element includes a thermo-sensitive film mainly composed of a heat sensitive material having electrical resistance varies depending on the temperature; a pair of electrode films arranged to measure the electrical resistance in the direction of the thickness of the thermo-sensitive film, a base plate mainly composed of a heat-resistant insulating material for supporting the thermo-sensitive film and the electrode films, an anti-diffusion film interposed between the thermo-sensitive film and the electrode film in the vicinity of the base plate, and a film mainly composed of a heat-resistant insulating material for covering the thermo-sensitive film and the electrode films except the lead-connecting terminals of the electrode films. The thermo-sensitive film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.05.ltoreq.x+y.ltoreq.0.95, and 0.ltoreq.y/(x+y).ltoreq.0.6, and the anti-diffusion film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.ltoreq.x+y.ltoreq.0.95.
摘要翻译：本发明提供了一种具有优异的耐热性，快速热响应性，稳定的电阻和高可靠性的温度传感器元件，其耐时间变化较小。温度传感器元件包括主要由具有根据温度而变化的电阻的热敏材料组成的热敏膜; 布置成测量热敏膜厚度方向上的电阻的一对电极膜，主要由用于支撑热敏膜的耐热绝缘材料和电极膜组成的基板，抗介于热敏膜与基板附近的电极膜之间的扩散膜，以及主要由用于覆盖热敏膜的耐热绝缘材料和除引线连接之外的电极膜构成的膜电极膜的端子。热敏膜由（Al1-x-yCrxFey）2O3表示的刚玉结晶结构的氧化物组成，其中0.05

10. 发明授权

US07083270B2 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US07083270B2
公开(公告)日：2006-08-01
申请号：US10462358
申请日：2003-06-16
申请人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
发明人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
IPC分类号： B41J2/045
CPC分类号： G01P15/0922 , B41J2/14233 , B41J2/14282 , B41J2002/1425 , B41J2202/03 , G01C19/5607 , H01L41/0477 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/316 , H01L41/319
摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.
摘要翻译：在压电元件20中，在硅基板1上形成由选自钴，镍，铁，锰和铜中的至少一种金属和贵金属构成的第一电极层2，在第一电极层2上形成由菱方或四方钙钛矿氧化物（例如PZT）制成的层3，使得压电层3优先沿（001）面取向。

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