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1. 发明申请

US20130001572A1 DISPLAY DEVICE, THIN-FILM TRANSISTOR USED FOR DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTORS 审中-公开
标题翻译：显示装置，用于显示装置的薄膜晶体管，以及制造薄膜晶体管的方法
公开(公告)号：US20130001572A1
公开(公告)日：2013-01-03
申请号：US13616673
申请日：2012-09-14
申请人： Eiichi SATOH , Genshirou Kawachi , Takahiro Kawashima
发明人： Eiichi SATOH , Genshirou Kawachi , Takahiro Kawashima
IPC分类号： H01L27/15 , H01L21/336
CPC分类号： H01L27/1248 , H01L29/41733 , H01L29/66765 , H01L29/78606 , H01L29/78696
摘要： A thin-film transistor used for a display device includes a gate electrode formed on an insulating substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a semiconductor layer composed of first semiconductor layer and second semiconductor layer formed on the gate insulating film; an ohmic contact layer formed on the semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer so as to be spaced from each other. The transistor further includes an etching stopper made of spin-on glass (SOG) on a channel-forming region of the semiconductor layer.
摘要翻译：用于显示装置的薄膜晶体管包括形成在绝缘基板上的栅电极; 栅极绝缘膜，形成在所述基板上以覆盖所述栅电极; 由形成在所述栅极绝缘膜上的第一半导体层和第二半导体层构成的半导体层; 形成在半导体层上的欧姆接触层; 以及形成在欧姆接触层上以彼此间隔开的源电极和漏电极。晶体管还包括在半导体层的沟道形成区上由旋涂玻璃（SOG）制成的蚀刻停止层。

2. 发明授权

US09000437B2 Thin-film semiconductor device including a multi-layer channel layer, and method of manufacturing the same 有权
标题翻译：包括多层沟道层的薄膜半导体器件及其制造方法
公开(公告)号：US09000437B2
公开(公告)日：2015-04-07
申请号：US13425879
申请日：2012-03-21
申请人： Hiroshi Hayashi , Takahiro Kawashima , Genshirou Kawachi
发明人： Hiroshi Hayashi , Takahiro Kawashima , Genshirou Kawachi
IPC分类号： H01L29/04 , H01L29/66 , H01L29/786
CPC分类号： H01L29/66765 , H01L29/04 , H01L29/78669 , H01L29/78696
摘要： A thin-film semiconductor device according to the present disclosure includes: a substrate; a gate electrode formed above the substrate; a gate insulating film formed on the gate electrode; a channel layer that is formed of a polycrystalline semiconductor layer on the gate insulating film; an amorphous semiconductor layer formed on the channel layer and having a projecting shape in a surface; and a source electrode and a drain electrode that are formed above the amorphous semiconductor layer, and a first portion included in the amorphous semiconductor layer and located closer to the channel layer has a resistivity lower than a resistivity of a second portion included in the amorphous semiconductor layer and located closer to the source and drain electrodes.
摘要翻译：根据本公开的薄膜半导体器件包括：衬底; 形成在所述衬底上的栅电极; 形成在栅电极上的栅极绝缘膜; 在所述栅极绝缘膜上由多晶半导体层形成的沟道层; 形成在所述沟道层上且在表面具有突出形状的非晶半导体层; 以及形成在非晶半导体层上方的源电极和漏电极，并且包括在非晶半导体层中并且位于更靠近沟道层的第一部分的电阻率低于包含在非晶半导体中的第二部分的电阻率并且更靠近源电极和漏电极。

3. 发明授权

US09178075B2 Thin-film semiconductor device and method for manufacturing the same 有权
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US09178075B2
公开(公告)日：2015-11-03
申请号：US13984931
申请日：2012-02-27
申请人： Takahiro Kawashima , Hisao Nagai , Eiichi Satoh , Yuji Kishida , Genshiro Kawachi
发明人： Takahiro Kawashima , Hisao Nagai , Eiichi Satoh , Yuji Kishida , Genshiro Kawachi
IPC分类号： H01L29/02 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/66742 , H01L29/66765 , H01L29/78678
摘要： A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.
摘要翻译：薄膜半导体器件包括形成在衬底上的栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜的上方并具有沟道区域的半导体层; 沟道保护层，其形成在所述半导体层上方并且含有包含硅，氧和碳的有机材料; 形成为与半导体层和沟道保护层之间的沟道保护层接触并且包括碳作为主要成分的界面层，来自有机材料的碳; 以及与半导体层电连接的源电极和漏电极。

4. 发明申请

US20130320339A1 THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜半导体器件及其制造方法
公开(公告)号：US20130320339A1
公开(公告)日：2013-12-05
申请号：US13984931
申请日：2012-02-27
申请人： Takahiro Kawashima , Hisao Nagai , Eiichi Satoh , Yuji Kishida , Genshiro Kawachi
发明人： Takahiro Kawashima , Hisao Nagai , Eiichi Satoh , Yuji Kishida , Genshiro Kawachi
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , H01L29/66742 , H01L29/66765 , H01L29/78678
摘要： A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.
摘要翻译：薄膜半导体器件包括形成在衬底上的栅电极; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜的上方并具有沟道区域的半导体层; 沟道保护层，其形成在所述半导体层上方并且含有包含硅，氧和碳的有机材料; 形成为与半导体层和沟道保护层之间的沟道保护层接触并且包括碳作为主要成分的界面层，来自有机材料的碳; 以及与半导体层电连接的源电极和漏电极。

5. 发明申请

US20140167165A1 THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管及制造薄膜晶体管的方法
公开(公告)号：US20140167165A1
公开(公告)日：2014-06-19
申请号：US14236698
申请日：2013-05-29
申请人： Yuji Kishida , Eiichi Satoh , Takahiro Kawashima
发明人： Yuji Kishida , Eiichi Satoh , Takahiro Kawashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/786 , H01L21/76829 , H01L27/1248 , H01L27/3262 , H01L29/66742 , H01L29/66765
摘要： A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of Log10 Nt≦0.0556θ+16.86 is satisfied where Nt (cm−3) represents a defect density of the semiconductor layer and θ (°) represents a taper angle of an edge portion of the protective layer.
摘要翻译：薄膜晶体管包括：在基板上方的栅电极; 栅电极上方的栅极绝缘层; 与栅电极相对的半导体层，其间具有栅极绝缘层; 在所述半导体层上方的保护层，并且包含有机材料; 以及源极电极和漏极电极，每个源电极和漏电极具有位于保护层上方的至少一部分。保护层包括具有至少部分与半导体层接触的部分的改变的层，其是通过在从源电极和漏电极露出的区域中改变保护层的表面层而产生的。在Nt（cm-3）表示半导体层的缺陷密度和厚度的情况下，满足Log10 Nt＆nlE; 0.0556＆het; +16.86的关系式; （°）表示保护层的边缘部的锥角。

6. 发明授权

US08735233B2 Manufacturing method for thin film semiconductor device, manufacturing method for thin film semiconductor array substrate, method of forming crystalline silicon thin film, and apparatus for forming crystalline silicon thin film 有权
标题翻译：薄膜半导体器件的制造方法，薄膜半导体阵列基板的制造方法，晶体硅薄膜的形成方法以及晶体硅薄膜的形成装置
公开(公告)号：US08735233B2
公开(公告)日：2014-05-27
申请号：US13451078
申请日：2012-04-19
申请人： Tomohiko Oda , Takahiro Kawashima
发明人： Tomohiko Oda , Takahiro Kawashima
IPC分类号： H01L21/00 , H01L21/36
CPC分类号： H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/02691 , H01L27/1285 , H01L29/66765
摘要： A crystalline silicon thin film is formed by irradiating a silicon thin film with a laser beam. The laser beam is a continuous wave laser beam. An intensity distribution of the laser beam in a first region about a center of the intensity distribution is symmetric on an anterior side and a posterior side of the center. The intensity distribution in a second region about the center is asymmetric on the anterior side and the posterior side. The first region is from the maximum intensity of the laser beam at the center to an intensity half of the maximum intensity. The second region is at most equal to the half of the maximum intensity of the laser beam. In the second region, an integral intensity value on the posterior side is larger than on the anterior side.
摘要翻译：通过用激光束照射硅薄膜来形成晶体硅薄膜。激光束是连续波激光束。激光束在强度分布中心附近的第一区域的强度分布在中心的前侧和后侧是对称的。围绕中心的第二区域的强度分布在前侧和后侧是不对称的。第一区域是从中心处的激光束的最大强度到最大强度的一半的强度。第二区域最多等于激光束的最大强度的一半。在第二区域中，后侧的积分强度值大于前侧的积分强度值。

7. 发明授权

US08330166B2 Thin-film semiconductor device for display apparatus thereof and manufacturing method thereof 有权
标题翻译：显示装置用薄膜半导体装置及其制造方法
公开(公告)号：US08330166B2
公开(公告)日：2012-12-11
申请号：US13115409
申请日：2011-05-25
申请人： Hiroshi Hayashi , Takahiro Kawashima , Genshiro Kawachi
发明人： Hiroshi Hayashi , Takahiro Kawashima , Genshiro Kawachi
IPC分类号： H01L27/14 , H01L29/04 , H01L29/10 , H01L21/00
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/66765
摘要： A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers. The two contact layers and the upper portion of the protrusion of said second channel layer are of opposite conductivity types.
摘要翻译：薄膜半导体器件依次包括衬底，栅电极，栅极绝缘膜，第一沟道层和第二沟道层。第二通道层包括在第一顶表面端部之间的突起。突起具有第一侧表面，每个侧表面在第一顶表面端部之一和突起的顶表面之间延伸。绝缘层位于突起的顶表面上。绝缘层具有第二侧表面，每个侧表面延伸到绝缘层的第二顶表面端部中的一个。两个接触层分别位于绝缘层的第二顶表面端部中的一个上，邻近绝缘层的第二侧表面之一，邻近凸起的第一侧表面之一，并且在第一顶表面第二通道层的端部。源电极位于两个接触层之一上，漏电极位于两个接触层中的另一个上。所述第二通道层的两个接触层和突起的上部具有相反的导电类型。

8. 发明授权

US08242025B2 Method for producing semiconductor chip, and field effect transistor and method for manufacturing same 有权
标题翻译：半导体芯片的制造方法以及场效晶体管及其制造方法
公开(公告)号：US08242025B2
公开(公告)日：2012-08-14
申请号：US12159352
申请日：2007-01-12
申请人： Takahiro Kawashima , Tohru Saitoh , Tohru Nakagawa , Hideo Torii
发明人： Takahiro Kawashima , Tohru Saitoh , Tohru Nakagawa , Hideo Torii
IPC分类号： H01L21/301
CPC分类号： H01L27/1266 , H01L21/8221 , H01L27/0688 , H01L27/1203 , H01L27/1285 , H01L27/1292
摘要： According to a method of the present invention for manufacturing a semiconductor piece, at least two semiconductor layers (12) are first formed on a substrate (10) by stacking a sacrificial layer (11) and the semiconductor layer (12) on the substrate (10) in this order and repeating this stacking. Next, the semiconductor layers (12) are divided into pieces by etching part of the sacrificial layers (11) and part of the semiconductor layers (12). Then, the pieces are separated from the substrate by removing the sacrificial layers (11).
摘要翻译：根据本发明的用于制造半导体片的方法，首先通过在衬底（10）上层叠牺牲层（11）和半导体层（12）来形成至少两个半导体层（12） 10），并重复该堆叠。接下来，通过蚀刻部分牺牲层（11）和部分半导体层（12）将半导体层（12）分割成多个。然后，通过去除牺牲层（11）将片与衬底分离。

9. 发明申请

US20100133509A1 SEMICONDUCTOR NANOWIRE AND ITS MANUFACTURING METHOD 有权
标题翻译：半导体纳米及其制造方法
公开(公告)号：US20100133509A1
公开(公告)日：2010-06-03
申请号：US12451898
申请日：2008-06-04
申请人： Takahiro Kawashima , Tohru Saitoh
发明人： Takahiro Kawashima , Tohru Saitoh
IPC分类号： H01L29/775 , H01L21/04
CPC分类号： H01L21/02653 , B82Y10/00 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/40 , C30B29/60 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/02656 , H01L27/3262 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/775 , H01L33/18 , Y10S438/962
摘要： A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.
摘要翻译：提供一种制造具有第一和第二区域的半导体纳米线的方法。将催化剂颗粒放在基材上。引入第一源气体，从而通过气 - 液 - 固相生长从催化剂颗粒生长第一区域。在第一区域的侧壁上形成保护涂层，并且引入第二源气体以通过液相 - 固相生长从第一区域延伸出第二区域。

10. 发明申请

US20100012921A1 NANOWIRE, DEVICE COMPRISING NANOWIRE, AND THEIR PRODUCTION METHODS 有权
标题翻译：纳米线，包括纳米线的器件及其生产方法
公开(公告)号：US20100012921A1
公开(公告)日：2010-01-21
申请号：US12518821
申请日：2007-11-29
申请人： Takahiro Kawashima , Tohru Saitoh
发明人： Takahiro Kawashima , Tohru Saitoh
IPC分类号： H01L29/66 , H01L33/00 , H01L31/0352 , H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , C30B11/12 , C30B29/605 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/028 , H01L31/0352 , H01L33/18 , H01L43/08 , Y02E10/547 , Y10S977/762
摘要： A nanowire according to the present invention includes: a nanowire body made of a first material; and a plurality of semiconductor particle made of a second material and being contained in at least a portion of the interior of the nanowire body.
摘要翻译：根据本发明的纳米线包括：由第一材料制成的纳米线体; 以及由第二材料制成并被包含在纳米线体的内部的至少一部分中的多个半导体颗粒。

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