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1. 发明申请

US20130001572A1 DISPLAY DEVICE, THIN-FILM TRANSISTOR USED FOR DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTORS 审中-公开
标题翻译：显示装置，用于显示装置的薄膜晶体管，以及制造薄膜晶体管的方法
公开(公告)号：US20130001572A1
公开(公告)日：2013-01-03
申请号：US13616673
申请日：2012-09-14
申请人： Eiichi SATOH , Genshirou Kawachi , Takahiro Kawashima
发明人： Eiichi SATOH , Genshirou Kawachi , Takahiro Kawashima
IPC分类号： H01L27/15 , H01L21/336
CPC分类号： H01L27/1248 , H01L29/41733 , H01L29/66765 , H01L29/78606 , H01L29/78696
摘要： A thin-film transistor used for a display device includes a gate electrode formed on an insulating substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a semiconductor layer composed of first semiconductor layer and second semiconductor layer formed on the gate insulating film; an ohmic contact layer formed on the semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer so as to be spaced from each other. The transistor further includes an etching stopper made of spin-on glass (SOG) on a channel-forming region of the semiconductor layer.
摘要翻译：用于显示装置的薄膜晶体管包括形成在绝缘基板上的栅电极; 栅极绝缘膜，形成在所述基板上以覆盖所述栅电极; 由形成在所述栅极绝缘膜上的第一半导体层和第二半导体层构成的半导体层; 形成在半导体层上的欧姆接触层; 以及形成在欧姆接触层上以彼此间隔开的源电极和漏电极。晶体管还包括在半导体层的沟道形成区上由旋涂玻璃（SOG）制成的蚀刻停止层。

2. 发明申请

US20130021553A1 LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20130021553A1
公开(公告)日：2013-01-24
申请号：US13562042
申请日：2012-07-30
申请人： Eiichi SATOH
发明人： Eiichi SATOH
IPC分类号： G02F1/136 , H01L33/08
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2001/136218
摘要： A liquid crystal display device includes a pair of transparent substrates facing each other through a liquid crystal layer disposed therebetween; a gate insulating film formed so as to cover a gate electrode formed in the pixel regions, disposed closer to the liquid crystal layer, of one of the transparent substrates; a semiconductor film provided on the gate insulating film, for forming a thin-film transistor; a first electrode provided on the semiconductor film through the first insulating film and the second insulating film; a second electrode provided on the first electrode through a third insulating film; and a contact hole formed collectively in the first insulating film, the second insulating film, and the third insulating film on the first electrode, where a second electrode is formed on the contact hole. A floating electrode is formed in the peripheral region of the contact hole.
摘要翻译：一种液晶显示装置，包括通过设置在其间的液晶层彼此面对的一对透明基板; 形成为覆盖形成在所述透明基板中的一个的液晶层附近的像素区域中的栅电极的栅极绝缘膜; 设置在所述栅极绝缘膜上的用于形成薄膜晶体管的半导体膜; 通过所述第一绝缘膜和所述第二绝缘膜设置在所述半导体膜上的第一电极; 通过第三绝缘膜设置在第一电极上的第二电极; 以及在第一电极上的第一绝缘膜，第二绝缘膜和第三绝缘膜中共同形成的接触孔，其中第二电极形成在接触孔上。浮动电极形成在接触孔的周边区域中。

3. 发明申请

US20120094403A1 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE 有权
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US20120094403A1
公开(公告)日：2012-04-19
申请号：US13337601
申请日：2011-12-27
申请人： Hisao NAGAI , Eiichi SATOH , Toshiyuki AOYAMA
发明人： Hisao NAGAI , Eiichi SATOH , Toshiyuki AOYAMA
IPC分类号： H01L21/336 , H01L21/66
CPC分类号： H01L29/78696 , H01L29/66765 , H01L29/78669 , H01L29/78678
摘要： Provided is a method of manufacturing a TFT substrate for preventing characteristics of a native oxide layer in a boundary between a microcrystal semiconductor layer and an amorphous semiconductor layer from being degraded. The method includes forming a gate electrode, forming a gate insulating film, modifying the formed first amorphous silicon thin film into a first crystalline silicon thin film, removing a silicon oxide layer on the surface of the first crystalline silicon thin film, forming the second amorphous silicon thin film, and dry etching the first crystalline silicon thin film and the second amorphous silicon thin film, and it is determined whether or not the in-process TFT substrate after the dry etching is returned to the processes after the dry etching by measuring the emission intensity of radicals in plasma during the dry etching and detecting the presence or absence of the silicon oxide layer in the boundary.
摘要翻译：提供一种制造用于防止微晶半导体层和非晶半导体层之间的边界中的自然氧化物层的特性降低的TFT基板的方法。该方法包括形成栅电极，形成栅极绝缘膜，将形成的第一非晶硅薄膜修饰为第一晶体硅薄膜，去除第一晶体硅薄膜表面上的氧化硅层，形成第二非晶硅硅薄膜，并且干蚀刻第一晶体硅薄膜和第二非晶硅薄膜，并且确定在干蚀刻之后的工艺中的TFT基板是否在干法蚀刻之后通过测量干蚀刻期间等离子体中自由基的发射强度，并检测边界中是否存在氧化硅层。

4. 发明申请

US20120018728A1 THIN FILM TRANSISTOR, DISPLAY DEVICE USING THE SAME, AND THIN FILM TRANSISTOR MANUFACTURING METHOD 有权
标题翻译：薄膜晶体管，使用其的显示器件和薄膜晶体管制造方法
公开(公告)号：US20120018728A1
公开(公告)日：2012-01-26
申请号：US13186564
申请日：2011-07-20
申请人： Eiichi SATOH
发明人： Eiichi SATOH
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66765 , H01L29/78696
摘要： A TFT of the present invention includes: a supporting substrate; a gate electrode formed on the supporting substrate; a gate insulation film formed on the substrate so as to cover the gate electrode; a first semiconductor layer formed across from the gate electrode with respect to the gate insulation film; a second semiconductor layer (i) formed on the first semiconductor layer, and (ii) having a first thickness and a secorrd thickness which is greater than the first thickness; an ohmic contact layer formed on the second semiconductor layer; and a source electrode and a drain electrode formed on the ohmic contact layer, spacing apart with each other.
摘要翻译：本发明的TFT包括：支撑基板; 形成在所述支撑基板上的栅电极; 栅极绝缘膜，形成在所述基板上以覆盖所述栅电极; 相对于栅极绝缘膜从栅电极形成的第一半导体层; 形成在所述第一半导体层上的第二半导体层（i），和（ii）具有大于所述第一厚度的第一厚度和第二厚度; 形成在所述第二半导体层上的欧姆接触层; 以及形成在欧姆接触层上的源电极和漏电极，彼此间隔开。

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