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1. 发明申请

US20220171405A1 CONTROL SYSTEM AND CONTROL METHOD FOR AUTOMATIC GUIDED VEHICLE 有权
公开(公告)号：US20220171405A1
公开(公告)日：2022-06-02
申请号：US17518819
申请日：2021-11-04
申请人： Hiromitsu ABE , Kazunari ICHIKAWA , Yutaka HASEGAWA , Ryuichi YOSHIDA , Chiaki YOSHIWARA , Masaaki AKAGAWA
发明人： Hiromitsu ABE , Kazunari ICHIKAWA , Yutaka HASEGAWA , Ryuichi YOSHIDA , Chiaki YOSHIWARA , Masaaki AKAGAWA
IPC分类号： G05D1/02 , G06K9/00 , G06K19/06
摘要： An integrated control system for an automatic guided vehicle in a vehicle production line includes: a plurality of the automatic guided vehicles each conveying a conveyance object which is a vehicle; a map construction unit that acquires a map of the vehicle production line; a position information acquisition unit that acquires position information of the plurality of the automatic guided vehicles on the map; a production instruction acquisition unit that acquires vehicle information of each of the vehicles conveyed by the plurality of the automatic guided vehicles; and an operation control unit that controls movement of each of the plurality of the automatic guided vehicles on the map based on the position information and the vehicle information.

2. 发明授权

US06746962B2 Method for fabricating a semi-conductor device having a tungsten film-filled via hole 有权
标题翻译：用于制造具有填充有钨膜的通孔的半导体器件的方法
公开(公告)号：US06746962B2
公开(公告)日：2004-06-08
申请号：US09978723
申请日：2001-10-18
申请人： Takenobu Kishida , Takeshi Harada , Toru Hinomura , Hiromitsu Abe , Mitsunari Satake , Kenichi Kunimitsu
发明人： Takenobu Kishida , Takeshi Harada , Toru Hinomura , Hiromitsu Abe , Mitsunari Satake , Kenichi Kunimitsu
IPC分类号： H01L21302
CPC分类号： H01L21/76843 , H01L21/7684 , H01L21/76846 , H01L21/7685 , H01L21/76862 , H01L21/76876 , H01L21/76877
摘要： A first metal film is deposited on a bottom and a wall of a recess formed in an insulating film on a semiconductor substrate. A second metal film is filled in the recess on the first metal film. The second metal film is formed from a polycrystalline tungsten film having a crystal plane of a (110) orientation.
摘要翻译：第一金属膜沉积在形成在半导体衬底上的绝缘膜中的凹部的底部和壁上。第二金属膜被填充在第一金属膜上的凹部中。第二金属膜由具有（110）取向晶体面的多晶钨膜形成。

3. 发明授权

US06245588B1 Semiconductor light-emitting device and method of manufacturing the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US06245588B1
公开(公告)日：2001-06-12
申请号：US09309271
申请日：1999-05-11
申请人： Hiromitsu Abe
发明人： Hiromitsu Abe
IPC分类号： H01L2120
CPC分类号： H01L33/02 , H01L33/0079 , H01L33/30 , Y10S438/977
摘要： A semiconductor light-emitting device includes a substrate formed of an AlGaAs-base semiconductor material. A light-emitting layer forming portion of an AlGaInP-base compound semiconductor material is formed on the substrate so as to provide a light emitting layer. On the surface of the light-emitting layer forming portion, an window layer of an AlGaAs-base semiconductor material is provided. An upper electrode is formed on the upper-side layer in electrical connection therewith, while a lower electrode formed on the substrate in electrical connection therewith. The light-emitting layer forming portion is of an overlaid structure formed by a clad layer formed in a first conductivity type on the substrate. An active layer is formed on the clad layer to have a composition with a lower band gap energy than that of the clad layer. A clad layer is formed in a second conductivity type on the active layer to have the same composition as the first-conductivity clad layer. The light emitted by the light-emitting layer forming portion and traveling toward the substrate is absorbed less by the substrate, which is rather reflected for outer radiation on the light radiation side. As a result, the efficiency of light radiation is improved to offer a semiconductor light-emitting device with higher brightness.
摘要翻译：半导体发光器件包括由AlGaAs基半导体材料形成的衬底。在基板上形成AlGaInP基化合物半导体材料的发光层形成部分，以提供发光层。在发光层形成部分的表面上，设置AlGaAs基半导体材料的窗口层。上电极形成在与其电连接的上侧层上，而下电极形成在与其电连接的基板上。发光层形成部分是由在衬底上以第一导电类型形成的覆盖层形成的重叠结构。在包覆层上形成有效层，具有比包层更低的带隙能量的组成。在有源层上以第二导电类型形成覆盖层，以具有与第一导电性覆盖层相同的组成。由发光层形成部分发射并向基板行进的光被基板吸收得较少，相对于光辐射侧的外辐射反射。结果，改善了光辐射的效率，以提供具有更高亮度的半导体发光器件。

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