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    • 7. 发明授权
    • Nanoimprinting method and mold for use in nanoimprinting
    • 用于纳米压印的纳米印刷方法和模具
    • US08178026B2
    • 2012-05-15
    • US12405847
    • 2009-03-17
    • Motoki OkinakaJunichi SekiAtsunori TerasakiShingo Okushima
    • Motoki OkinakaJunichi SekiAtsunori TerasakiShingo Okushima
    • B29C35/08B29C59/02
    • G03F7/0002B82Y10/00B82Y40/00
    • A nanoimprinting method includes: forming at a region for performing a first nanoimprinting process on a substrate, a first patterning region with a first affinity to resin; forming at a region for performing a second nanoimprinting process on the substrate, a second patterning region with a second affinity to resin, the second affinity being lower than the first affinity; applying the resin to the first patterning region and transferring a pattern of a mold to the resin by the first nanoimprinting process; and modifying the second patterning region to a region with affinity to resin that is higher than the second affinity, then applying the resin to the modified region, and performing the second nanoimprinting process to process the second patterning region thereby connecting patterns formed at the first patterning region and the second patterning region to each other.
    • 纳米压印方法包括:在用于在衬底上进行第一纳米压印过程的区域上形成第一图案化区域,其对树脂具有第一亲和力; 在用于在所述基板上进行第二纳米压印处理的区域上形成第二图案化区域,所述第二图案形成区域对树脂具有第二亲和力,所述第二亲和力低于所述第一亲和力; 将所述树脂施加到所述第一图案形成区域并通过所述第一纳米压印工艺将模具的图案转移到所述树脂; 并且将所述第二图案形成区域修饰为与所述第二亲和力高于树脂的区域,然后将所述树脂施加到所述改性区域,并进行所述第二纳米压印处理以处理所述第二图案化区域,从而将形成在所述第一图案形成 区域和第二图案形成区域彼此。
    • 8. 发明申请
    • NANOIMPRINTING METHOD AND MOLD FOR USE IN NANOIMPRINTING
    • 用于纳米压印的纳米压印方法和模具
    • US20090273124A1
    • 2009-11-05
    • US12405847
    • 2009-03-17
    • Motoki OkinakaJunichi SekiAtsunori TerasakiShingo Okushima
    • Motoki OkinakaJunichi SekiAtsunori TerasakiShingo Okushima
    • B29C35/08B29C59/02
    • G03F7/0002B82Y10/00B82Y40/00
    • A nanoimprinting method includes: forming at a region for performing a first nanoimprinting process on a substrate, a first patterning region with a first affinity to resin; forming at a region for performing a second nanoimprinting process on the substrate, a second patterning region with a second affinity to resin, the second affinity being lower than the first affinity; applying the resin to the first patterning region and transferring a pattern of a mold to the resin by the first nanoimprinting process; and modifying the second patterning region to a region with affinity to resin that is higher than the second affinity, then applying the resin to the modified region, and performing the second nanoimprinting process to process the second patterning region thereby connecting patterns formed at the first patterning region and the second patterning region to each other.
    • 纳米压印方法包括:在用于在衬底上进行第一纳米压印过程的区域上形成第一图案化区域,其对树脂具有第一亲和力; 在用于在所述基板上进行第二纳米压印处理的区域上形成第二图案化区域,所述第二图案形成区域对树脂具有第二亲和力,所述第二亲和力低于所述第一亲和力; 将所述树脂施加到所述第一图案形成区域并通过所述第一纳米压印工艺将模具的图案转移到所述树脂; 并且将所述第二图案形成区域修饰为与所述第二亲和力高于树脂的区域,然后将所述树脂施加到所述改性区域,并进行所述第二纳米压印处理以处理所述第二图案化区域,从而将形成在所述第一图案形成 区域和第二图案形成区域彼此。
    • 9. 发明申请
    • METHOD OF FORMING FINE PATTERN
    • 形成精细图案的方法
    • US20090039563A1
    • 2009-02-12
    • US12065246
    • 2006-08-25
    • Motoki OkinakaKazuhito TsukagoshiYoshinobu Aoyagi
    • Motoki OkinakaKazuhito TsukagoshiYoshinobu Aoyagi
    • B29C59/16
    • G03F7/0002B81C1/00031B81C1/00111B81C2201/0152B81C2201/0153B82Y10/00B82Y40/00H01L21/31H01L21/3121H01L21/316H01L21/76817
    • A method of fine-pattern formation in which in forming a pattern, a fine pattern formed in a mold can be transferred to a pattering material in a short time at a low temperature and low pressure and, after the transfer of the fine pattern to the patterning material, the fine pattern formed in the patterning material does not readily deform. The method for fine-pattern formation comprises: a first step in which a mold having a fine structure with recesses/protrusions is pressed against a pattering material comprising a polysilane; a second step in which the patterning material is irradiated with ultraviolet to photooxidize the patterning material; a third in which the pressing of the mold against the patterning material is relieved and the mold is drawn from the pattering material; and a fourth step in which that surface of the patterning material to which the fine pattern has been transferred is irradiated with an oxygen plasma to oxidize the surface.
    • 精细图案形成方法在形成图案时,在模具中形成的精细图案可以在低温低压下在短时间内转印到图案材料,并且在精细图案转印到 图案形成材料中形成的微细图案不容易变形。 精细图案形成方法包括:第一步骤,其中具有凹陷/突起的精细结构的模具被压在包含聚硅烷的图案材料上; 第二步骤,其中图案形成材料被紫外线照射以对图案材料进行光氧化; 第三,其中将模具压靠在图案形成材料上被释放并且模具从图案材料中拉出; 以及第四步骤,其中已经转印有精细图案的图案形成材料的表面用氧等离子体照射以氧化该表面。