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1. 发明授权

US06976016B2 Maximizing expected generalization for learning complex query concepts 失效
标题翻译：最大化学习复杂查询概念的预期泛化
公开(公告)号：US06976016B2
公开(公告)日：2005-12-13
申请号：US10032319
申请日：2001-12-21
申请人： Edward Y. Chang , Kwang-Ting Cheng
发明人： Edward Y. Chang , Kwang-Ting Cheng
IPC分类号： G06F17/30
CPC分类号： G06F17/30967 , Y10S707/99933 , Y10S707/99934 , Y10S707/99935
摘要： A method of learning user query concept for searching visual images encoded in computer readable storage media comprising: providing a multiplicity of sample images encoded in a computer readable medium; providing a multiplicity of sample expressions that correspond to sample images and in which terms of the sample expressions represent features of corresponding sample images; defining a user query concept sample space bounded by a boundary k-CNF expression and by a boundary k-DNF expression refining the user query concept sample space by, soliciting user feedback as to which of the multiple presented sample images are close to the user's query concept; removing from the boundary k-CNF expression disjunctive terms based upon the solicited user feedback; and removing from the boundary k-DNF expression respective conjunctive terms based upon the solicited user feedback.
摘要翻译：一种用于搜索在计算机可读存储介质中编码的可视图像的用户查询概念的方法，包括：提供在计算机可读介质中编码的多个样本图像; 提供对应于样本图像的多个样本表达式，并且样本表达式的哪些项表示相应样本图像的特征; 定义由边界k-CNF表达式界定的用户查询概念样本空间，以及通过边界k-DNF表达式来提炼用户查询概念样本空间的用户查询概念样本空间，征求用户对多个呈现的样本图像中的哪一个接近用户查询的反馈概念; 根据被请求的用户反馈从边界k-CNF表达分离术语中去除; 并根据所请求的用户反馈从边界k-DNF表达中移除各自的连接项。

2. 发明授权

US07158970B2 Maximizing expected generalization for learning complex query concepts 失效
标题翻译：最大化学习复杂查询概念的预期泛化
公开(公告)号：US07158970B2
公开(公告)日：2007-01-02
申请号：US10116383
申请日：2002-04-02
申请人： Edward Y. Chang , Kwang-Ting Cheng
发明人： Edward Y. Chang , Kwang-Ting Cheng
IPC分类号： G06F17/30 , G06F7/00
CPC分类号： G06F17/30967 , Y10S707/99933 , Y10S707/99934 , Y10S707/99935
摘要： A method of learning a user query concept is provided which includes a sample selection stage and a feature reduction stage; during the sample selection stage, sample objects are selected from a query concept sample space bounded by a k-CNF and a k-DNF; the selected sample objects include feature sets that are no more than a prescribed amount different from a corresponding feature set defined by the k-CNF; during the feature reduction stage, individual features are removed from the k-CNF that are identified as differing from corresponding individual features of sample objects indicated by the user to be close to the user's query concept; also during the feature reduction stage, individual features are removed from the k-DNF that are identified as not differing from corresponding individual features of sample objects indicated by the user to be not close to the user's query concept.
摘要翻译：提供了一种学习用户查询概念的方法，其包括样本选择阶段和特征缩减阶段; 在样本选择阶段，从由k-CNF和k-DNF界定的查询概念样本空间中选择样本对象; 所选择的样本对象包括不超过与k-CNF定义的相应特征集不同的规定量的特征集; 在特征缩减阶段，将各个特征从k-CNF中移除，所述k-CNF被识别为与用户指示的样本对象的相应单独特征不同以接近用户的查询概念; 还在特征缩减阶段期间，从k-DNF中移除被识别为与用户指示的不同于用户查询概念的样本对象的相应单独特征不同的各个特征。

3. 发明申请

US20150204676A1 CROWD-SOURCING INDOOR LOCATIONS 有权
标题翻译： CROWD-SOURCING室内地点
公开(公告)号：US20150204676A1
公开(公告)日：2015-07-23
申请号：US14357012
申请日：2012-08-15
申请人： Faen Zhang , Edward Y. Chang , Yongqiang Huang , Shuchang Zhou
发明人： Faen Zhang , Edward Y. Chang , Yongqiang Huang , Shuchang Zhou
IPC分类号： G01C21/20
CPC分类号： G01C21/206 , G01S5/0252 , G01S5/0263 , G01S5/0294 , H04W4/027 , H04W4/043
摘要： Aspects of the present disclosure provide techniques for constructing a scalable model of an indoor space using crowd-sourced inertial navigation system (INS) signals from mobile devices. By tracking INS signals from a number of participating users, the user's trajectories can be estimated as they move their mobile devices indoors. The estimated trajectories can be scored against similar routes taken by other users. Routes with the highest scores are then laid out over a map of the indoor space to identify areas most often traveled to and from landmarks and distances between the landmarks.
摘要翻译：本公开的方面提供了使用来自移动设备的来自人群的惯性导航系统（INS）信号来构建室内空间的可扩展模型的技术。通过跟踪来自多个参与用户的INS信号，可以在室内移动其移动设备时估计用户的轨迹。估计的轨迹可以与其他用户采取的类似路线进行评分。然后将最高分数的路线布局在室内空间的地图上，以确定最常往返于地标和地标之间距离的区域。

4. 发明授权

US07259084B2 Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer 有权
标题翻译：通过使用新的GeSi缓冲层在Si衬底上生长GaAs外延层
公开(公告)号：US07259084B2
公开(公告)日：2007-08-21
申请号：US10699839
申请日：2003-11-04
申请人： Edward Y. Chang , Guangli Luo , Tsung Hsi Yang , Chung Yen Chang
发明人： Edward Y. Chang , Guangli Luo , Tsung Hsi Yang , Chung Yen Chang
IPC分类号： H01L21/28
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02546 , H01L33/0066
摘要： This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemical vapor deposition (MOCVD).The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaxial layer, such as Si0.1Ge0.9 in a thickness of 0.8 μm on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si01.Ge0.9 due to the large mismatch between this layer and Si substrate.Furthermore, a subsequent 0.8 μm Si0.05Ge0.95 layer, and/or optionally a further 0.8 μm Si0.02Ge0.98 layer, are grown. They form strained interfaces of said layers can bend and terminate the propagated upward dislocation very effectively. Therefore, a film of pure Ge is grown on the surface of said epitaxial layers.Finally, a GaAs epitaxial layer is grown on said Ge film by using MOCVD.
摘要翻译：本发明提供了通过使用超高真空化学气相沉积（UHVCVD）在Si衬底上生长Ge外延层的方法，随后通过使用金属有机化学气相沉积在所述Ge外延层的表面的Ge膜上生长GaAs层（MOCVD）。该方法包括以下步骤：首先，在标准清洁程序中预清洁硅晶片，用HF溶液浸渍并预烘烤以除去其天然氧化物层。然后，通过使用超高真空化学气相沉积法在所述Si衬底上生长厚度为0.8μm的高Ge组成外延层，例如Si 0.1 O 0.1 Ge 0.9 在某些条件下因此，由于该层和Si衬底之间的大的失配，产生许多位错并且位于界面附近以及位于S01的一部分的低部分。此外，随后的0.8μm的Si 0.05 Al 0.1 O 0.95层和/或任选的另外的0.8μm的Si 0.02 Co 0.98 < SUB>层，生长。它们形成所述层的应变界面可以非常有效地弯曲和终止传播的向上错位。因此，在所述外延层的表面上生长纯Ge的膜。最后，通过使用MOCVD在所述Ge膜上生长GaAs外延层。

5. 发明授权

US06943068B2 Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology 失效
标题翻译：使用热回流抗蚀剂技术在半导体器件中制造纳米门的方法
公开(公告)号：US06943068B2
公开(公告)日：2005-09-13
申请号：US10715743
申请日：2003-11-17
申请人： Edward Y. Chang , Huang-Ming Lee
发明人： Edward Y. Chang , Huang-Ming Lee
IPC分类号： C23F1/02 , G03F7/00 , H01L21/00 , H01L21/285 , H01L21/338 , H01L21/84
CPC分类号： H01L21/28587
摘要： The invention relates to a method for fabricating nanometer gate semiconductor device using thermally reflowed photoresist technology, comprising steps of (i) spin-coating two layers of photoresists on a substrate, where a bottom layer of photoresist is a polymeric photoresist having a lower sensitivity and a higher resolution, and a top layer of photoresist, is another polymeric photoresist having a higher sensitivity and a lower resolution, with respect to the electron beam; (ii) heating the photoresists for curing by way of using a hotplate; (iii) using photolithography in an electron beam direct writing manner to expose a pattern on the photoresists for forming a gate; (iv) using a developer and an etchant for developing and etching to form a recess on the gate; (v) plating a metallic layer on the recess of the gate using an electron gun evaporation technique; and (vi) removing the photoresists to obtain the gate, characterized in that after the etching of the recess of the gate, the photoresists are reflowed by using a hot plate heating manner within a predetermined period of time and temperature, such that the recess of the gate is formed with a nanometer-sized width.
摘要翻译：本发明涉及一种使用热回流光致抗蚀剂技术制造纳米门半导体器件的方法，包括以下步骤：（i）在衬底上旋涂两层光致抗蚀剂，其中底层光致抗蚀剂是具有较低灵敏度的聚合物光致抗蚀剂，更高的分辨率和顶层光致抗蚀剂是相对于电子束具有更高灵敏度和更低分辨率的另一种聚合物光致抗蚀剂; （ii）通过使用电热板加热光刻胶固化; （iii）以电子束直接写入的方式使用光刻法曝光在光致抗蚀剂上以形成栅极的图案; （iv）使用显影剂和蚀刻剂进行显影和蚀刻以在栅极上形成凹陷; （v）使用电子枪蒸发技术在栅极凹槽上镀金属层; 和（vi）去除所述光致抗蚀剂以获得所述栅极，其特征在于，在蚀刻所述栅极的凹部之后，通过在预定时间和温度内使用热板加热方式回流所述光刻胶，使得所述光致抗蚀剂的凹部栅极形成为纳米尺寸的宽度。

6. 发明授权

US08792905B1 Location monitoring using clusters of entities 有权
标题翻译：使用实体集群进行位置监控
公开(公告)号：US08792905B1
公开(公告)日：2014-07-29
申请号：US13433138
申请日：2012-03-28
申请人： Guanfeng Li , Hongji Bao , Edward Y. Chang
发明人： Guanfeng Li , Hongji Bao , Edward Y. Chang
IPC分类号： H04W24/00
CPC分类号： H04W64/006 , G01S5/0027 , H04W4/029 , H04W4/046
摘要： Systems, methods, and machine-readable media for monitoring the locations of a number of entities are provided. The system may be configured to track the locations of a multitude of entities by grouping entities together into clusters of entities based on their geographic proximity and trajectories. A member of a cluster may be identified as a leader or a follower. The system may receive a number of location reports for the entities and update the locations of the entities based on whether the entity is a leader or a follower. For example, the system may update a back-end location database with the location information for a leader while location updates for followers may be converted into locations that are relative to the corresponding leader's and cached at the system.
摘要翻译：提供了用于监视多个实体的位置的系统，方法和机器可读介质。该系统可以被配置为基于它们的地理接近度和轨迹，将实体分组到实体簇来跟踪多个实体的位置。群集的成员可以被识别为领导者或追随者。系统可以为实体接收多个位置报告，并且基于实体是领导者还是跟随者来更新实体的位置。例如，系统可以使用针对领导者的位置信息更新后端位置数据库，而对于关注者的位置更新可以被转换为相对于对应的领导者并在系统处被缓存的位置。

7. 发明申请

US20130103503A1 AdHeat Advertisement Model for Social Network 审中-公开
标题翻译： AdHeat社交网络广告模型
公开(公告)号：US20130103503A1
公开(公告)日：2013-04-25
申请号：US13619130
申请日：2012-09-14
申请人： Dong Zhang , Edward Y. Chang
发明人： Dong Zhang , Edward Y. Chang
IPC分类号： G06Q30/02
CPC分类号： G06Q30/0269 , G06Q10/10 , G06Q30/02 , G06Q30/0204 , G06Q30/0214 , G06Q30/0244 , G06Q30/0245 , G06Q30/0246 , G06Q30/0249 , G06Q30/0255 , G06Q30/0264 , G06Q50/01
摘要： In one implementation, a computer-implemented method includes receiving at a server information indicating activity levels of users of a computer-implemented social network or acquaintance relationships of the users on the computer-implemented social network. The method further includes generating by the server influence scores for the users based on the received information. The method also includes recursively propagating by the server an ad through the computer-implemented social network between users having an acquaintance relationship by transmitting the ad from a propagating user to a recipient user when a difference between a first influence score of the propagating user and a second influence score of the recipient user is greater than a threshold.
摘要翻译：在一个实现中，计算机实现的方法包括在服务器处接收指示计算机实现的社交网络的用户的活动级别或者计算机实现的社交网络上的用户的熟人关系的信息。该方法还包括由服务器根据接收到的信息来影响用户的分数。该方法还包括当服务器通过计算机实现的社交网络在具有相识关系的用户之间通过将广告从传播用户发送到接收者用户的广告来传播广告，当传播用户的第一影响分数与接收者用户的第二影响分数大于阈值。

8. 发明申请

US20120226564A1 PROVIDING ADVERTISEMENTS ON A SOCIAL NETWORK 审中-公开
标题翻译：在社交网络上提供广告
公开(公告)号：US20120226564A1
公开(公告)日：2012-09-06
申请号：US13471791
申请日：2012-05-15
申请人： SEYED VAHAB MIRROKNI BANADAKI , Corinna Cortes , Edward Y. Chang
发明人： SEYED VAHAB MIRROKNI BANADAKI , Corinna Cortes , Edward Y. Chang
IPC分类号： G06Q30/02
CPC分类号： G06Q30/0254
摘要： In one implementation, a computer-implemented method includes receiving, at a server system, a request for an advertisement to provide to a first user of a social network, and determining, for each of a plurality of advertisements, a probability that the first user will select the advertisement based, at least in part, on previous propagations of the advertisement by one or more second users of the social network. The method can further include scoring, by the server system, the plurality of advertisements based upon the determined probabilities of selection by the first user and bids associated with the plurality of advertisements, and providing one or more of the plurality of advertisements for presentation to the first user based upon the scoring of the plurality of advertisements.
摘要翻译：在一个实现中，计算机实现的方法包括在服务器系统处接收对广告的请求以提供给社交网络的第一用户，并且针对多个广告中的每一个确定第一用户的概率将至少部分地基于社交网络的一个或多个第二用户的广告的先前传播来选择广告。该方法还可以包括基于所确定的第一用户的选择概率和与多个广告相关联的出价，由服务器系统对多个广告进行评分，以及提供多个广告中的一个或多个以呈现给基于多个广告的评分的第一用户。

9. 发明申请

US20110228094A1 ADAPTIVE MULTI-MODAL INTEGRATED BIOMETRIC IDENTIFICATION DETECTION AND SURVEILLANCE SYSTEMS 有权
标题翻译：自适应多模式集成生物识别检测和监测系统
公开(公告)号：US20110228094A1
公开(公告)日：2011-09-22
申请号：US13101149
申请日：2011-05-05
申请人： Ken Prayoon Cheng , Edward Y. Chang , Yuan-Fang Wang
发明人： Ken Prayoon Cheng , Edward Y. Chang , Yuan-Fang Wang
IPC分类号： H04N7/18 , G06K9/00
CPC分类号： H04N7/18 , G06K9/00 , G06K9/00288 , G06K9/00771 , G06K9/00885 , G06K9/00892 , G06K9/6293 , G06T7/90 , G08B13/196 , H04N7/181
摘要： A surveillance system is provided that includes at least one sensor disposed in a security area of a surveillance region to sense an occurrence of a potential security breach event; a plurality of cameras is disposed in the surveillance region; at least one camera thereof has a view of the security area and can be configured to automatically gather biometric information concerning at least one subject person in the vicinity of the security area in response to the sensing of a potential security breach event; one or more other of the plurality of cameras can be configured to search for the at least one subject person; a processing system is programmed to produce a dossier corresponding to the at least one subject person to match biometric information of one or more persons captured by one or more of the other cameras with corresponding biometric information in the dossier.
摘要翻译：提供了一种监视系统，其包括设置在监视区域的安全区域中的至少一个传感器，以感测潜在的安全漏洞事件的发生; 多个照相机设置在监视区域中; 其至少一个相机具有安全区域的视图，并且可以被配置为响应于对潜在安全漏洞事件的感测而自动收集关于安全区域附近的至少一个被摄体的生物特征信息; 多个摄像机中的一个或多个其他摄像机可被配置成搜索至少一个被摄体; 处理系统被编程为产生对应于至少一个对象人的档案，以使一个或多个其他摄像机捕获的一个或多个人的生物统计信息与档案中的相应生物特征信息相匹配。

10. 发明授权

US5766967A Method for fabricating a submicron T-shaped gate 失效
标题翻译：亚微米T形门的制造方法
公开(公告)号：US5766967A
公开(公告)日：1998-06-16
申请号：US726952
申请日：1996-10-07
申请人： Yeong-Lin Lai , Hung-Ping D. Yang , Chun-Yen Chang , Edward Y. Chang , Kazumitsu Nakamura , Rico Chang
发明人： Yeong-Lin Lai , Hung-Ping D. Yang , Chun-Yen Chang , Edward Y. Chang , Kazumitsu Nakamura , Rico Chang
IPC分类号： H01L21/285 , H01L21/335 , H01L21/338 , H01L21/8232
CPC分类号： H01L29/66863 , H01L21/28581 , H01L21/28587 , H01L29/66462 , Y10S438/951
摘要： A method for fabricating submicron T-shaped gates for the field-effect transistors disclosed, which can be accomplished by using a tri-layer positive photoresist with a single electron beam exposure and a single development step. Therefore, the cost can be reduced and the yield can be raised for fabricating high speed field-effect transistors. The method comprises the steps of: (i) sequentially spinning coating a first photoresist layer, a second photoresist layer and a third photoresist layer on the top of epitaxial layers, wherein the second photoresist layer is thicker than the third photoresist layer, and the third photoresist layer is not thicker than the first photoresist layer, the viscosity of the second photoresist layer is larger than that of the first and third photoresist layers, and the electron beam sensitivity of the second photoresist layer is larger than that of the first and the third photoresist layers; (ii) exposing all the gate stripe region of the photoresist layers by a single electron beam exposure; (iii) using a developer to develop all the exposed positions of the three photoresist layers by a single development step, so that a T-shaped opening is formed; (iv) etching and removing a contact layer of the epitaxial layers under the T-shaped opening; (v) evaporating gate metal layers to cover the third photoresist layer and to fill the T-shaped opening; (vi) removing the photoresist layers to lift off the evaporated metal layers so that the submicron T-shaped gate is obtained.
摘要翻译：公开了用于制造用于场效应晶体管的亚微米T形栅极的方法，其可以通过使用具有单电子束曝光的三层正性光致抗蚀剂和单一显影步骤来实现。因此，可以降低成本并且可以提高用于制造高速场效应晶体管的产量。该方法包括以下步骤：（i）在外延层的顶部上依次纺丝涂覆第一光致抗蚀剂层，第二光致抗蚀剂层和第三光致抗蚀剂层，其中第二光致抗蚀剂层比第三光致抗蚀剂层厚，光致抗蚀剂层不比第一光致抗蚀剂层厚，第二光致抗蚀剂层的粘度大于第一和第三光致抗蚀剂层的粘度，并且第二光致抗蚀剂层的电子束灵敏度大于第一和第三光致抗蚀剂层的电子束灵敏度光阻层; （ii）通过单个电子束曝光曝光光致抗蚀剂层的所有栅条纹区域; （iii）通过单个显影步骤使用显影剂显影三个光致抗蚀剂层的所有曝光位置，从而形成T形开口; （iv）在T形开口下蚀刻除去外延层的接触层; （v）蒸发栅极金属层以覆盖第三光致抗蚀剂层并填充T形开口; （vi）去除光致抗蚀剂层以剥离蒸发的金属层，从而获得亚微米T形门。

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