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1. 发明专利

JP2004281230A Beam source and beam treatment device 审中-公开
公开(公告)号：JP2004281230A
公开(公告)日：2004-10-07
申请号：JP2003071071
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： FUKUDA AKIRA , SHIBATA AKIO , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/305 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/321 , H01J37/32357
摘要： PROBLEM TO BE SOLVED: To provide a beam source and a beam treatment device capable of irradiating various beams like positive ion, negative ion, neutral particles or the like in a large diameter uniformly on a treated object and realizing charge-free and damage-free properties. SOLUTION: In the beam source provided with an antenna generating plasma inside a plasma generating chamber, a first electrode arranged inside the plasma chamber, a second electrode arranged in opposition to the first electrode inside the plasma generating chamber and a voltage impression part drawing out particles from the plasma generated by the antenna by impressing voltage between the first electrode and the second electrode, both the antenna and the second electrode are placed in opposition to the first electrode. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2004281232A Beam source and beam treatment device 审中-公开
公开(公告)号：JP2004281232A
公开(公告)日：2004-10-07
申请号：JP2003071073
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： ICHIKI KATSUNORI , SHIBATA AKIO , FUKUDA AKIRA , HIYAMA HIROKUNI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： B01J3/00 , B01J19/12 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/3065 , H01S3/00 , H05H1/46
CPC分类号： H05H1/46 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide a beam source and a beam treatment device capable of uniformly irradiating various beams like positive ion, negative ion, neutral particles or the like on a treated object in a large ion current density and in a large diameter, and realizing a large caliber and longer life of a grid electrode. SOLUTION: Provided with a means for leading in gas, a positive and negative ion plasma generating means generating a state in which the positive ion and the negative ion are mixed through plasmolyzation of gas, a positive and negative ion generating chamber generating positive and negative ion, and a plurality of grid electrodes equipped with a plurality of beam-drawing-out holes, the device draws out ion or beams neutralized from the ion through the beam-drawing-out holes fitted to the grid electrodes by accelerating the positive ion or the negative ion through impression of voltage between the plurality of electrodes. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004281231A Beam source and beam treatment device 有权
公开(公告)号：JP2004281231A
公开(公告)日：2004-10-07
申请号：JP2003071072
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： FUKUDA AKIRA , SHIBATA AKIO , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J19/08 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a beam source and a beam treatment device capable of uniformly irradiating various beams like positive ion, negative ion, neutral particles or the like in a large diameter on a treated object and realizing charge-free and damage-free properties. SOLUTION: The device, provided with an antenna 2 generating plasma inside a plasma generating chamber, a first electrode 1 arranged inside the plasma generating chamber 4, and a potential difference generating means generating potential difference between the first electrode 1 and the antenna 2, draws out particle beams through the first electrode 1 from the plasma generated between the antenna 2 and the first electrode 1. COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2004281229A Electrode for beam source and manufacturing method of electrode for beam source 审中-公开
公开(公告)号：JP2004281229A
公开(公告)日：2004-10-07
申请号：JP2003071070
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： SHIBATA AKIO , FUKUDA AKIRA , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J3/00 , B01J19/12 , C23C14/48 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electrode for beam source capable of manufacturing electrodes for large-diameter beam sources with a number of pores of a high aspect ratio formed at low cost and with ease. SOLUTION: A plurality of thin plates 60, 70 are joined with each other to form an electrode with pores communicating almost in parallel. Latitudinal thin plates 60 with notches 60a formed and longitudinal thin plates 70 with notches 70a formed are prepared. The latitudinal thin plates 60 are arrayed in parallel in a latitudinal direction and the longitudinal thin plates 70 are arrayed in parallel in a longitudinal direction. The notches 60a of the latitudinal thin plates 60 and the notches of the longitudinal thin plates 70 are insertion-coupled with each other to form the electrode with the lattice-shaped pores 40a. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2004281228A Beam source and beam treatment device equipped with beam source 审中-公开
公开(公告)号：JP2004281228A
公开(公告)日：2004-10-07
申请号：JP2003071069
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： SHIBATA AKIO , FUKUDA AKIRA , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J3/00 , B01J19/12 , C23C14/48 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a beam source with a low-cost structure capable of irradiating large-diameter beams on a treated object. SOLUTION: The device is provided with a plasma generating chamber 16, plasma generating parts 20, 22 generating plasma 24 inside the plasma generating chamber 16, a first electrode 40 arranged inside the plasma generating chamber 16, a second electrode 50 arranged in opposition to the first electrode inside the plasma generating chamber 16, and a voltage impression part 52 drawing out particles from the plasma 24 generated in the plasma generating chamber 16 by impressing voltage between the first electrode 40 and the second electrode 50. The first electrode 40 is divided into a plurality of partial electrodes with a number of pores formed. COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2008108745A Neutral particle beam treatment device 审中-公开
标题翻译：中性粒子束处理装置
公开(公告)号：JP2008108745A
公开(公告)日：2008-05-08
申请号：JP2007326831
申请日：2007-12-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J19/08 , H01L21/3065 , H01L21/31 , H05H3/00
摘要： PROBLEM TO BE SOLVED: To provide a charge-free and damage-free neutral particle beam treatment device which can radiate beams of large diameters to a treatment object and can obtain a high neutralization ratio by an economical and compact constitution. SOLUTION: The neutral particle beam treatment device is provided with a holding part 20 to hold a treatment object X, a plasm generating part which repeats alternately the application and stop of a high-frequency voltage and generates plasma containing positive ions and negative ions in a vacuum chamber 3, an orifice electrode 4 which is placed in the vacuum chamber and arranged between the plasma generating part and the treatment object and shields ultraviolet rays emitted from the plasma, a grid electrode 5 arranged in an upper stream with respect to the orifice electrode in the vacuum chamber, and a bipolar power source 102 which applies a voltage between the orifice electrode and the grid electrode and takes out alternately the positive ions and the negative ions from the plasma generated in the plasma generating part. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种无辐射和无损伤的中性粒子束处理装置，其能够将大直径的光束辐射到处理对象，并且可以通过经济且紧凑的构造获得高的中和比。解决方案：中性粒子束处理装置设置有保持处理对象X的保持部20，交替施加和停止高频电压的等离子体发生部，产生含有正离子和负极的等离子体真空室3中的离子，设置在真空室中并且布置在等离子体产生部分和处理对象之间并屏蔽从等离子体发射的紫外线的孔电极4，栅极5相对于真空室中的孔电极，以及在孔电极和栅电极之间施加电压并从等离子体产生部分中产生的等离子体中交替取出正离子和负离子的双极电源102。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2005260195A Etching device 审中-公开
标题翻译：蚀刻设备
公开(公告)号：JP2005260195A
公开(公告)日：2005-09-22
申请号：JP2004128549
申请日：2004-04-23
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NODA SHUICHI , SAGAWA SEIJI , ICHIKI KATSUNORI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching device which has high etching rate and perpendicular processability.
SOLUTION: The etching device includes a plasma formation room 1 which forms a plamsa 15 by pulse modulation discharge using mixed gas of Cl
2 and SF
6 , an upstream side electrode 8 provided at the upstream side of the plasma formation room 1 and to which a dc voltage is applied from a dc power supply 9, a downstream electrode 2 provided at the downstream side of the plasma formation room 1 opposed to the upstream side electrode 8 and formed with a plurality of apertures 13 for generating a high speed neutral particle beam 5 by neutralizing ion 12 as the down stream side electrode 2 for drawing the ion 12 from the plasma 15, a high frequency power source 10 for applying a high frequency power to the downstream side electrode 2 and a treatment room 4 provided at the downstream of the downstream side electrode and having a stage 3 for holding the processed substrate 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高蚀刻速率和垂直加工性能的蚀刻装置。解决方案：蚀刻装置包括：等离子体形成室1，其通过使用Cl 2 和SF 6 的混合气体通过脉冲调制放电形成二极管15，上游侧电极8，其设置在等离子体形成室1的上游侧，并且从直流电源9施加直流电压，设置在等离子体形成室1的与上游侧电极8相对的下游侧的下游电极2 并且形成有多个孔13，用于通过中和作为用于从等离子体15吸引离子12的下游侧电极2的离子12产生高速中性粒子束5，用于施加高频功率的高频电源10 设置在下游侧电极的下游侧的下游侧电极2和处理室4，并具有用于保持被处理基板6的载物台3.（C）2005，JPO＆NCIPI

8. 发明专利

JP2002289581A NEUTRAL PARTICLE BEAM TREATMENT DEVICE 失效
公开(公告)号：JP2002289581A
公开(公告)日：2002-10-04
申请号：JP2001088859
申请日：2001-03-26
申请人： EBARA CORP , UNIV TOHOKU
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： H05H1/46 , C23C14/32 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H3/02
摘要： PROBLEM TO BE SOLVED: To provide a neutral particle beam treatment device which can apply a large-bore beam to an object to be treated, with low-cost and compact constitution, and is hard to damage the object to be treated. SOLUTION: This neutral particle beam treatment device is equipped with a holder 20 which holds the object to be treated, a plasma generator which generates plasma within a vacuum chamber 3 by applying a high frequency electric field, an orifice electrode 4 which is arranged between the substance X to be treated and a plasma generator, a grid electrode 5, and a bipolar power source 102 which accelerates negative ions 6 from the generated plasma and passes them through the orifice 4a made in the orifice electrode 4 by applying voltage between the orifice electrode 4 as an anode and the grid electrode 5 during stoppage of a high-frequency electric field.

9. 发明专利

JP2003158099A ETCHING METHOD AND ETCHING DEVICE 审中-公开
公开(公告)号：JP2003158099A
公开(公告)日：2003-05-30
申请号：JP2001353809
申请日：2001-11-19
申请人： EBARA CORP , UNIV TOHOKU
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： H01L21/28 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching method capable of making highly accurate working to a fine pattern and working of a high selection rate to a mask and a base layer be compatible without causing charge-up and etching shape abnormalities in a workpiece, and an etching device. SOLUTION: The etching method is provided with a first process of generating collimated neutral particle beams of >=10 eV and

10. 发明专利

JP2002289584A SURFACE TREATMENT METHOD 失效
公开(公告)号：JP2002289584A
公开(公告)日：2002-10-04
申请号：JP2001088888
申请日：2001-03-26
申请人： EBARA CORP
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： B23K15/00 , B23K101/40 , H01J37/317 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment method which can apply a large-bore beam to an object to be treated with low-cost and compact constitution, and enables highly accurate processing to a fine pattern. SOLUTION: This system has a plasma generation means 2 which generates positive ions and a negative ions within plasma, and an ion extraction means 7 which draws out generated positive plasma and negative plasma selectively from the plasma and also accelerate them in the specified direction. This applies the positive ions and negative ions selectively to the object X to be treated. Especially, it is desirable to extract the positive ions and negative ions alternately from the plasma and apply them to the object. Only the negative ions may be selectively extracted to be applied on the object. Moreover, the ions may be neutralized and applied on the object as a neutral particle beam.

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