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1. 发明专利

JP2005260195A Etching device 审中-公开
标题翻译：蚀刻设备
公开(公告)号：JP2005260195A
公开(公告)日：2005-09-22
申请号：JP2004128549
申请日：2004-04-23
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NODA SHUICHI , SAGAWA SEIJI , ICHIKI KATSUNORI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching device which has high etching rate and perpendicular processability.
SOLUTION: The etching device includes a plasma formation room 1 which forms a plamsa 15 by pulse modulation discharge using mixed gas of Cl
2 and SF
6 , an upstream side electrode 8 provided at the upstream side of the plasma formation room 1 and to which a dc voltage is applied from a dc power supply 9, a downstream electrode 2 provided at the downstream side of the plasma formation room 1 opposed to the upstream side electrode 8 and formed with a plurality of apertures 13 for generating a high speed neutral particle beam 5 by neutralizing ion 12 as the down stream side electrode 2 for drawing the ion 12 from the plasma 15, a high frequency power source 10 for applying a high frequency power to the downstream side electrode 2 and a treatment room 4 provided at the downstream of the downstream side electrode and having a stage 3 for holding the processed substrate 6.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高蚀刻速率和垂直加工性能的蚀刻装置。解决方案：蚀刻装置包括：等离子体形成室1，其通过使用Cl 2 和SF 6 的混合气体通过脉冲调制放电形成二极管15，上游侧电极8，其设置在等离子体形成室1的上游侧，并且从直流电源9施加直流电压，设置在等离子体形成室1的与上游侧电极8相对的下游侧的下游电极2 并且形成有多个孔13，用于通过中和作为用于从等离子体15吸引离子12的下游侧电极2的离子12产生高速中性粒子束5，用于施加高频功率的高频电源10 设置在下游侧电极的下游侧的下游侧电极2和处理室4，并具有用于保持被处理基板6的载物台3.（C）2005，JPO＆NCIPI

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