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1. 发明专利

JP2011009600A Substrate processing method and substrate processing apparatus 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：JP2011009600A
公开(公告)日：2011-01-13
申请号：JP2009153290
申请日：2009-06-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TAIMA YASUSHI , SUZUKI TSUKURU , O CHIKAAKI , YAMAUCHI KAZUO , KODERA AKIRA , SAITO TAKAYUKI , HIYAMA HIROKUNI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To suppress formation of a watermark on the surface of a substrate having been dried by reducing the used amount of isopropyl alcohol (IPA) or th like as much as possible, and minimizing production of droplets and mist.SOLUTION: A substrate processing method that dries the surface of the substrate W which is at least partially hydrophobic includes: arranging a proximate plate 16 at a position near the surface of the substrate W opposite in parallel with the surface of the substrate W; forming a continuous coating liquid film 28 which comes into contact with the surface of the substrate W and the proximate plate 16 between the surface of the substrate W and the proximate plate 16; and removing the coating liquid film 28, positioned in a region on the surface of the substrate W which is not covered with the proximate plate 16 any more, from the surface of the substrate W by changing the position of the coating liquid film 28 relative to the surface of the substrate W by relatively moving the substrate W and the proximate plate 16 in parallel and in one direction.
摘要翻译：要解决的问题：通过尽可能地减少异丙醇（IPA）或类似物的使用量来抑制已经干燥的基底的表面上的水印的形成，并且最小化液滴和雾的产生。解决方案：A 使至少部分疏水的衬底W的表面干燥的衬底处理方法包括：在邻近衬底W的表面平行于衬底W的表面附近的位置处布置邻近板16; 形成与衬底W的表面和衬底W的表面与邻近板16之间的接近板16接触的连续涂覆液膜28; 并且通过改变涂布液膜28相对于基板W的位置，从基板W的表面移除位于基板W的表面上未被邻近板16的表面的区域中的涂布液膜28 基板W的表面通过相对移动基板W和邻近板16而平行且沿一个方向。

2. 发明专利

JP2004281230A Beam source and beam treatment device 审中-公开
公开(公告)号：JP2004281230A
公开(公告)日：2004-10-07
申请号：JP2003071071
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： FUKUDA AKIRA , SHIBATA AKIO , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/305 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/321 , H01J37/32357
摘要： PROBLEM TO BE SOLVED: To provide a beam source and a beam treatment device capable of irradiating various beams like positive ion, negative ion, neutral particles or the like in a large diameter uniformly on a treated object and realizing charge-free and damage-free properties. SOLUTION: In the beam source provided with an antenna generating plasma inside a plasma generating chamber, a first electrode arranged inside the plasma chamber, a second electrode arranged in opposition to the first electrode inside the plasma generating chamber and a voltage impression part drawing out particles from the plasma generated by the antenna by impressing voltage between the first electrode and the second electrode, both the antenna and the second electrode are placed in opposition to the first electrode. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2010177543A Method and apparatus for processing substrate 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2010177543A
公开(公告)日：2010-08-12
申请号：JP2009020147
申请日：2009-01-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YAMAUCHI KAZUO , O CHIKAAKI
IPC分类号： H01L21/304 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To suppress watermarking as much as possible, and also reduce the usage of organic solvent such as IPA and the like, by changing from hydrophobicity to hydrophilicity the property of a substrate surface at least part of which liquid is attached to before the same is dried without allowing the entire substrate to be dried. SOLUTION: An exposed region where the liquid is removed from the substrate surface by spraying liquid screening-out gas to part of the region of the substrate surface to which the liquid is attached is formed, or the exposed region from which the liquid is removed is formed on the part of the substrate surface by suctioning the part of the liquid of the substrate surface. Thereafter, the property of the substrate surface disposed on the exposed region is changed from the hydrophobicity to hydrophilicity by spraying plasma containing gas to the exposed region. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了尽可能地抑制水印，并且还减少了诸如IPA等的有机溶剂的使用，通过从疏水性变为亲水性，至少部分液体为在不使整个基材干燥的情况下将其干燥。解决方案：通过将液体排出气体喷射到附着有液体的基板表面的一部分区域而形成液体从基板表面除去的暴露区域，或暴露区域，液体通过抽吸基板表面的液体的一部分而形成在基板表面的一部分上。此后，通过喷射含有气体的等离子体将曝光区域的基板表面的特性从疏水性变为亲水性。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008108745A Neutral particle beam treatment device 审中-公开
标题翻译：中性粒子束处理装置
公开(公告)号：JP2008108745A
公开(公告)日：2008-05-08
申请号：JP2007326831
申请日：2007-12-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： ICHIKI KATSUNORI , YAMAUCHI KAZUO , HIYAMA HIROKUNI , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J19/08 , H01L21/3065 , H01L21/31 , H05H3/00
摘要： PROBLEM TO BE SOLVED: To provide a charge-free and damage-free neutral particle beam treatment device which can radiate beams of large diameters to a treatment object and can obtain a high neutralization ratio by an economical and compact constitution. SOLUTION: The neutral particle beam treatment device is provided with a holding part 20 to hold a treatment object X, a plasm generating part which repeats alternately the application and stop of a high-frequency voltage and generates plasma containing positive ions and negative ions in a vacuum chamber 3, an orifice electrode 4 which is placed in the vacuum chamber and arranged between the plasma generating part and the treatment object and shields ultraviolet rays emitted from the plasma, a grid electrode 5 arranged in an upper stream with respect to the orifice electrode in the vacuum chamber, and a bipolar power source 102 which applies a voltage between the orifice electrode and the grid electrode and takes out alternately the positive ions and the negative ions from the plasma generated in the plasma generating part. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种无辐射和无损伤的中性粒子束处理装置，其能够将大直径的光束辐射到处理对象，并且可以通过经济且紧凑的构造获得高的中和比。解决方案：中性粒子束处理装置设置有保持处理对象X的保持部20，交替施加和停止高频电压的等离子体发生部，产生含有正离子和负极的等离子体真空室3中的离子，设置在真空室中并且布置在等离子体产生部分和处理对象之间并屏蔽从等离子体发射的紫外线的孔电极4，栅极5相对于真空室中的孔电极，以及在孔电极和栅电极之间施加电压并从等离子体产生部分中产生的等离子体中交替取出正离子和负离子的双极电源102。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2004281229A Electrode for beam source and manufacturing method of electrode for beam source 审中-公开
公开(公告)号：JP2004281229A
公开(公告)日：2004-10-07
申请号：JP2003071070
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： SHIBATA AKIO , FUKUDA AKIRA , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J3/00 , B01J19/12 , C23C14/48 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electrode for beam source capable of manufacturing electrodes for large-diameter beam sources with a number of pores of a high aspect ratio formed at low cost and with ease. SOLUTION: A plurality of thin plates 60, 70 are joined with each other to form an electrode with pores communicating almost in parallel. Latitudinal thin plates 60 with notches 60a formed and longitudinal thin plates 70 with notches 70a formed are prepared. The latitudinal thin plates 60 are arrayed in parallel in a latitudinal direction and the longitudinal thin plates 70 are arrayed in parallel in a longitudinal direction. The notches 60a of the latitudinal thin plates 60 and the notches of the longitudinal thin plates 70 are insertion-coupled with each other to form the electrode with the lattice-shaped pores 40a. COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2004281228A Beam source and beam treatment device equipped with beam source 审中-公开
公开(公告)号：JP2004281228A
公开(公告)日：2004-10-07
申请号：JP2003071069
申请日：2003-03-14
申请人： Ebara Corp , Univ Tohoku , 東北大学長 , 株式会社荏原製作所
发明人： SHIBATA AKIO , FUKUDA AKIRA , HIYAMA HIROKUNI , ICHIKI KATSUNORI , YAMAUCHI KAZUO , SAGAWA SEIJI
IPC分类号： H05H1/46 , B01J3/00 , B01J19/12 , C23C14/48 , H01J27/02 , H01J27/16 , H01J37/08 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a beam source with a low-cost structure capable of irradiating large-diameter beams on a treated object. SOLUTION: The device is provided with a plasma generating chamber 16, plasma generating parts 20, 22 generating plasma 24 inside the plasma generating chamber 16, a first electrode 40 arranged inside the plasma generating chamber 16, a second electrode 50 arranged in opposition to the first electrode inside the plasma generating chamber 16, and a voltage impression part 52 drawing out particles from the plasma 24 generated in the plasma generating chamber 16 by impressing voltage between the first electrode 40 and the second electrode 50. The first electrode 40 is divided into a plurality of partial electrodes with a number of pores formed. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2011009602A Method and device for treating substrate 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2011009602A
公开(公告)日：2011-01-13
申请号：JP2009153292
申请日：2009-06-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YAMAUCHI KAZUO , O CHIKAAKI , KODERA AKIRA , SUZUKI TSUKURU , TAIMA YASUSHI , SAITO TAKAYUKI , HIYAMA HIROKUNI
IPC分类号： H01L21/304 , G02F1/1333 , G02F1/139
摘要： PROBLEM TO BE SOLVED: To rinse and dry a substrate surface exhibiting hydrophobicity after being cleaned while preventing a watermark from being generated on the substrate surface.SOLUTION: In this device for treating a substrate for rinsing and drying a surface of a substrate W at least the part of which is hydrophobic, a dam 18 is arranged in a location surrounding an outer peripheral part of the horizontally arranged substrate W; rinse water is supplied to the surface of the substrate W to form a liquid film 26 where the rinse water the flow of which is dammed by the dam 18 continues, on the whole surface of the substrate W; the substrate W is rotated to move the liquid film 26 located at the center part of the surface of the substrate W to the outer peripheral part of the surface of the substrate W to expose the center part of the substrate surface; and thereafter the liquid film 26 on the surface of the substrate W is completely removed, and the surface of the substrate W is dried.
摘要翻译：要解决的问题：在清洁之后冲洗并干燥表现出疏水性的基材表面，同时防止在基材表面上产生水印。解决方案：在用于处理基材以漂洗和干燥基材W的表面的该装置中至少其一部分是疏水性的，在水平布置的基板W的外围部分周围的位置设有堤坝18; 将冲洗水供给到基板W的表面，形成液膜26，在基板W的整个表面上继续流动由坝18阻挡的冲洗水; 使基板W旋转，将位于基板W的表面的中央部的液膜26移动到基板W的表面的外周部，露出基板表面的中央部; 然后将基板W的表面上的液膜26完全除去，使基板W的表面干燥。

8. 发明专利

JP2011009599A Method and device for treating substrate 有权
标题翻译：用于处理基板的方法和装置
公开(公告)号：JP2011009599A
公开(公告)日：2011-01-13
申请号：JP2009153289
申请日：2009-06-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： O CHIKAAKI , YAMAUCHI KAZUO , KODERA AKIRA , SUZUKI TSUKURU , TAIMA YASUSHI , SAITO TAKAYUKI , HIYAMA HIROKUNI
IPC分类号： H01L21/304 , B08B5/00
CPC分类号： F26B5/12 , F26B21/004 , H01L21/67028
摘要： PROBLEM TO BE SOLVED: To minimize generation of a watermark by quickly and completely removing a liquid from a wet substrate surface without allowing the liquid to remain, including a thin liquid film and minute droplets to an invisible level without using an organic solvent.SOLUTION: This method for treating a substrate for drying a substrate surface which is wet with a liquid, includes: sucking the liquid 40 on the substrate surface together with its surrounding gas, while being peeled from the surface, by a gas/liquid suction nozzle 28 disposed opposite the substrate surface, while relatively moving the gas/liquid suction nozzle 28 and the substrate W in parallel to each other; and blowing a dry gas from a dry gas supply nozzle 44, disposed opposite the substrate surface, toward the region of the substrate surface from which the liquid 40 has been removed while relatively moving the dry gas supply nozzle 44 and the substrate W in parallel to each other.
摘要翻译：要解决的问题：通过快速且完全地从湿的基底表面去除液体来最小化水印的产生，而不使液体保持，包括薄的液体膜和微小的液滴到不可见的水平，而不使用有机溶剂。解决方案：这种用于处理被液体湿润的基片表面干燥的基片的方法包括：通过设置在气体/液体吸嘴28上的方式，将表面上的液体40与其周围的气体一起从表面上剥离，从而将基片表面上的液体40吸附在基片表面上在衬底表面相对的同时使气体/液体吸嘴28和衬底W彼此平行地相对移动; 并且将干燥气体供给喷嘴44的干燥气体供给到与衬底表面相对设置的干燥气体朝向衬底表面的已被除去液体40的区域，同时使干燥气体供给喷嘴44和衬底W与彼此。

9. 发明专利

JP2006286536A Plasma generation method, induction coupling type plasma source, and plasma treatment device 审中-公开
标题翻译：等离子体生成方法，感应耦合型等离子体源和等离子体处理装置
公开(公告)号：JP2006286536A
公开(公告)日：2006-10-19
申请号：JP2005107843
申请日：2005-04-04
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YAMAUCHI KAZUO
IPC分类号： H05H1/46 , C23C16/507 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an induction coupling type plasma source capable of suppressing cost of a device using a general and low cost matching box, and capable of lowing the cost of total process by maintaining yield of treating object. SOLUTION: The induction coupling type plasma source comprises a plasma generation chamber 2 having a wall formed of a material transmitting an electromagnetic wave, a gas inlet part for introducing a process gas into the plasma generating chamber 2, and an antenna 20 arranged along the wall of the plasma generating chamber 2. The middle point 25 of the both end parts 21, 22 of the antenna 20 is grounded electrically. The induction coupling type plasma source has a high frequency power supply 8 which supplies high frequency power to the both ends parts 25 of the antenna 20 and generates induction coupling type plasma P inside the plasma generating chamber 2. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制使用一般和低成本匹配箱的装置的成本的感应耦合型等离子体源，并且能够通过保持处理对象的产量来降低整个处理的成本。感应耦合型等离子体源包括具有由传输电磁波的材料形成的壁的等离子体产生室2，用于将处理气体引入到等离子体产生室2中的气体入口部分和布置成沿着等离子体产生室2的壁。天线20的两端部21,22的中间点25被电接地。感应耦合型等离子体源具有向天线20的两端部25提供高频功率的高频电源8，并且在等离子体发生室2内产生感应耦合型等离子体P.版权所有（C） 2007年，日本特许厅和INPIT

10. 发明专利

JP2007266522A Plasma treatment device and processing method employing it 审中-公开
标题翻译：等离子体处理装置和处理方法
公开(公告)号：JP2007266522A
公开(公告)日：2007-10-11
申请号：JP2006092789
申请日：2006-03-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YAMAUCHI KAZUO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device and its working method capable of quickly removing reaction product and effecting etching high in uniformity with high speed, in plasma processing employing gas pulse. SOLUTION: The plasma treatment device 9 is provided with a plasma producing chamber 1 for producing plasma, a processing chamber 5 in which a workpiece 6 is installed and a gas introducing unit (pulse nozzle) 101 which introduces gas for processing timely and intermittently into the plasma producing chamber 1. Impulse wave is generated by introducing the gas for processing timely and intermittently into the plasma producing chamber 1 from the gas introducing unit 101 to remove the reaction product stagnated on the surface of the workpiece 6 by the impulse wave. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体处理装置及其工作方法，其能够在采用气体脉冲的等离子体处理中快速除去反应产物并高速均匀地进行高蚀刻蚀刻。解决方案：等离子体处理装置9设置有用于产生等离子体的等离子体生成室1，安装工件6的处理室5和及时引入气体的气体导入单元（脉冲喷嘴）101，间歇地进入等离子体产生室1.通过从气体引入单元101将等待时间间歇地进行处理的气体引入等离子体产生室1，通过脉冲波除去滞留在工件6的表面上的反应产物而产生脉冲波。版权所有（C）2008，JPO＆INPIT

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