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1. 发明专利

JP2015016540A 膜厚測定装置、膜厚測定方法、および膜厚測定装置を備えた研磨装置有权
标题翻译：薄膜厚度测量装置，薄膜厚度测量方法和装有薄膜厚度测量装置的抛光装置
公开(公告)号：JP2015016540A
公开(公告)日：2015-01-29
申请号：JP2013147089
申请日：2013-07-12
申请人：株式会社荏原製作所 , Ebara Corp
发明人： NOMURA SUEKAZU , IIIZUMI TAKESHI , WATANABE KAZUHIDE , KOBAYASHI YOICHI
IPC分类号： B24B49/12 , B24B37/34 , B24B49/04 , G01B11/06 , H01L21/304
CPC分类号： B24B37/013 , B24B37/005 , B24B37/34 , B24B49/12 , G01B11/0633 , H01L22/12 , H01L22/26
摘要：【課題】膜厚の測定精度を向上させることができる膜厚測定装置および膜厚測定方法を提供する。【解決手段】膜厚測定装置は、基板Wを水平に支持する基板ステージ87と、基板ステージ87上の基板Wの表面全体にリンス水を供給するリンス水供給部90と、基板ステージ87上の基板Wの表面上の測定領域に光を照射し、測定領域からの反射光のスペクトルを生成し、該スペクトルから基板Wの膜厚を決定する膜厚測定ヘッド84と、光の光路上に気体の噴流を形成し、該気体の噴流を測定領域に当てる気体噴射部130とを備える。【選択図】図6
摘要翻译：要解决的问题：提供一种可以提高膜厚测量精度的膜厚测量装置和膜厚测量方法。方法：一种膜厚测量装置，包括：用于水平支撑衬底W的衬底台87; 用于将冲洗水供给到基板台87上的基板W的整个表面上的冲洗水供给部90; 将基板台87上的基板W的表面上的测量区域发光的膜厚测量头84产生从测量区域反射的光谱，并且基于所述测量区域确定基板W的膜厚度光谱; 以及气体注入部分130，其在光学光路上形成气体的喷射流，并将气体的所述喷射流施加到测量区域上。

2. 发明专利

JP2007284800A Electrolytic processing method 审中-公开
标题翻译：电解处理方法
公开(公告)号：JP2007284800A
公开(公告)日：2007-11-01
申请号：JP2007160111
申请日：2007-06-18
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI IKUTARO , YASUDA HOZUMI , IIIZUMI TAKESHI , HIROKAWA KAZUTO , OBATA ITSUKI
IPC分类号： C25F7/00 , C25F3/00 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To flatten a substrate by removing excessive metals such as copper embedded in a trench while increasing an ability to eliminate difference in level, and to shorten the processing time. SOLUTION: In an electrolytic processing method, a workpiece and a processing electrode are brought close to or in contact with each other, and, in the presence of a liquid, processing is carried out through a relative movement between the workpiece and the processing electrode while applying a voltage between the workpiece and the processing electrode. The relative speed between the workpiece and the processing electrode is made high in the early stage of the processing but slowed down in the later stage of the processing. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过在增加消除水平差异的能力的同时除去嵌入在沟槽中的过量金属（例如铜）来平坦化基板，并缩短处理时间。解决方案：在电解处理方法中，工件和处理电极彼此靠近或接触，并且在存在液体的情况下，通过工件和工件之间的相对运动来进行加工处理电极，同时在工件和处理电极之间施加电压。在处理的早期阶段，工件和加工电极之间的相对速度变高，但在后期的处理中减慢。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005060732A Electrolytic processing device and electrolytic processing method 有权
标题翻译：电解处理装置和电解处理方法
公开(公告)号：JP2005060732A
公开(公告)日：2005-03-10
申请号：JP2003207200
申请日：2003-08-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YASUDA HOZUMI , NOMICHI IKUTARO , HIROKAWA KAZUTO , IIIZUMI TAKESHI , OBATA ITSUKI
IPC分类号： C25F3/12 , C25F7/00 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To regenerate an ion exchange body by improving the regenerating rate of the exchange capacity without exerting adverse effects on the throughput of the device. SOLUTION: The electrolytic processing device is provided with a holding part 32 of holding a work, electrodes 56 and 66, contact members 58 and 68 and exhaust parts 64 and 74 of exhausting metallic ions taken from the work to the contact members 58 and 68 under the processing, and has an electrode 34 for subjecting the work to processing while approaching or coming in contact with the work held by the holding part in the presence of a liquid, and a regeneration dummy electrode 84 freely approaching or coming in contact with the contact members 58 and 68. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过提高交换容量的再生速率来再生离子交换体，而不会对装置的生产量产生不利影响。解决方案：电解处理装置设有保持工件的保持部32，电极56和66，接触构件58和68以及从工件中取出的金属离子的排出部分64和74到接触构件58 并且具有电极34，用于在液体存在的同时接近或接触由保持部件保持的工件进行加工，以及自由接近或接触的再生虚拟电极84 与接触构件58和68.版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2006009103A Electrolytic processing apparatus and method for conditioning contact member 审中-公开
标题翻译：电解处理装置和调节接触构件的方法
公开(公告)号：JP2006009103A
公开(公告)日：2006-01-12
申请号：JP2004188959
申请日：2004-06-25
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI IKUTARO , YASUDA HOZUMI , IIIZUMI TAKESHI , OBATA ITSUKI
IPC分类号： C25F7/00
摘要： PROBLEM TO BE SOLVED: To always satisfactorily perform uniform electrolytic processing without exerting adverse influence on working properties and the service life of a contact member.
SOLUTION: The subject electrolytic processing apparatus includes; a processing electrode 84 capable of bringing into contact with or closing to a workpiece W; a feeding electrode 86 for feeding electricity to the workpiece; a contact member 40 disposed between the workpiece and at least one of the processing electrode and the feeding electrode and is freely brought into contact with the workpiece; a power source 90 for applying voltage between the processing electrode and the feeding electrode; drive parts 62, 82 for relatively driving the workpiece and one of the processing electrode and the feeding electrode; liquid feeding parts 80a, 94 for feeding a fluid between the workpiece and one of the processing electrode and the feeding electrode; and a conditioning part 50 provided with a conditioner 48 which is brought into contact with the contact face of the contact member with the workpiece and performing the conditioning of the contact face.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：始终令人满意地进行均匀的电解处理，而不会对接触构件的工作特性和使用寿命产生不利影响。本实施方式的电解处理装置包括：能够与工件W接触或关闭的处理电极84; 用于向工件供电的供电电极86; 接触构件40，设置在工件与处理电极和供电电极中的至少一个之间，并且自由地与工件接触; 用于在处理电极和馈电电极之间施加电压的电源90; 用于相对地驱动工件和处理电极和馈电电极之一的驱动部件62,82; 用于在工件与处理电极和馈电电极之一之间供给流体的液体供给部分80a，94; 以及设置有与接触构件的接触面与工件接触并进行接触面的调理的调节器48的调节部50。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005264304A Electrolytic processing apparatus 审中-公开
标题翻译：电解处理设备
公开(公告)号：JP2005264304A
公开(公告)日：2005-09-29
申请号：JP2004082863
申请日：2004-03-22
申请人： Ebara Corp , 株式会社荏原製作所
发明人： IIIZUMI TAKESHI , NOMICHI IKUTARO , YASUDA HOZUMI , OBATA ITSUKI , HIROKAWA KAZUTO
IPC分类号： C25F3/00
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic processing apparatus where an electrically conductive material provided on the surface of a substrate can be flatly processed, and further, depositions deposited on the surface of the object to be processed such as a substrate can be subjected to removing (washing) while, e.g., obviating CMP (Chemical Mechanical Polishing) or reducing the load in the CMP treatment as possible.
SOLUTION: The electrolytic processing apparatus is equipped with: an electrode part 46 provided with an electrode member 92 containing an electrode 86 and an ion exchanger 90 covering the surface of the electrode 86; a holding part for bringing the object to be processed into contact with the ion exchanger 90 in the electrode member 92 or holding the object to be processed thereto freely proximately; and a power source connected to an electrode 86 of the electrode member 92 in the electrode part 46, and at least an edge part in the face confronted with the object to be processed in the electrode 86 is provided with a roundness (chamfered part 102).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电解处理装置，其中设置在基板表面上的导电材料可以被平坦地加工，并且还可以沉积在诸如基板的被处理物体的表面上的沉积物在清除（洗涤）的同时，例如消除CMP（化学机械抛光）或降低CMP处理中的负荷。解决方案：电解处理装置配备有电极部分46，电极部分46设置有包含电极86的电极部件92和覆盖电极86的表面的离子交换器90; 用于使待处理物体与电极构件92中的离子交换器90接触或保持被处理物体自由地近似的保持部; 以及与电极部件46中的电极部件92的电极86连接的电源，并且至少在电极86中与被处理物体相对的面的边缘部分设置有圆度（倒角部分102）。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005054205A Electrochemical machining apparatus and electrochemical machining method 审中-公开
标题翻译：电化学加工设备和电化学加工方法
公开(公告)号：JP2005054205A
公开(公告)日：2005-03-03
申请号：JP2003206147
申请日：2003-08-05
申请人： Ebara Corp , 株式会社荏原製作所
发明人： YASUDA HOZUMI , NOMICHI IKUTARO , HIROKAWA KAZUTO , IIIZUMI TAKESHI , OBATA ITSUKI
IPC分类号： C25F3/12 , C25F3/00 , C25F7/00 , H01L21/28 , H01L21/3205 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To electrochemical-machine even a vulnerable material so as not to destroy a device formed on a substrate; and to further uniformize the machined amount within the surface of the substrate and the roughness of the surface after having been machined, by increasing the uniformity of a contact pressure of an electrode onto the substrate during machining. SOLUTION: This electrochemical machining apparatus comprises a substrate-holding part 42 for holding the substrate; an electrode base 62 provided with an electrode member 60 which machines the substrate held by the substrate-holding part 42 while contacting with the substrate in the presence of a liquid; and a support base 70 for float-supporting the electrode base 62 through a float mechanism 72. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使是易损材料进行电化学加工，以免破坏在基板上形成的器件; 并且通过在加工过程中增加电极对基板的接触压力的均匀性，进一步使基板表面中的加工量和加工后的表面粗糙度均匀化。解决方案：该电化学加工装置包括用于保持基板的基板保持部42; 设置有电极部件60的电极基体60，该电极部件60在液体的存在下与基板接触而对由基板保持部42保持的基板进行加工; 以及用于通过浮动机构72浮动支撑电极基座62的支撑底座70.版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2014027257A Wafer polishing method 审中-公开
标题翻译：波浪抛光方法
公开(公告)号：JP2014027257A
公开(公告)日：2014-02-06
申请号：JP2013081856
申请日：2013-04-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： OTA MASAAKI , NOMURA SUEKAZU , IIIZUMI TAKESHI
IPC分类号： H01L21/304 , B24B37/013 , B24B37/24
CPC分类号： H01L22/14 , B24B37/013 , B24B37/042 , B24B49/105 , H01L21/02074 , H01L21/3212 , H01L21/7684 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a polishing method of wafer that includes a Ru film and a Ta film or a TaN film that is formed under the Ru film.SOLUTION: The polishing method includes polishing a Ru film 106a by causing a wafer W to be slid by a polishing pad 10, measuring the thickness of the Ru film 106a by a film thickness sensor during the polishing of the Ru film 106a, calculating a differential value of an output value of the film thickness sensor, detecting a specific change point of the differential value, and determining a removal point of the Ru film 106a from timing at which the change point is detected.
摘要翻译：要解决的问题：提供一种包括在Ru膜下形成的Ru膜和Ta膜或TaN膜的晶片的抛光方法。抛光方法：抛光方法包括通过使晶片W 用抛光垫10滑动，在Ru膜106a的研磨过程中通过膜厚度传感器测量Ru膜106a的厚度，计算膜厚度传感器的输出值的差值，检测膜厚度的特定变化点差分值，以及从检测到变化点的定时确定Ru膜106a的去除点。

8. 发明专利

JP2014017418A Polishing method 有权
标题翻译：抛光方法
公开(公告)号：JP2014017418A
公开(公告)日：2014-01-30
申请号：JP2012154975
申请日：2012-07-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： IIIZUMI TAKESHI , WATANABE KAZUHIDE , KOBAYASHI YOICHI
IPC分类号： H01L21/304 , B24B37/04
CPC分类号： H01L21/3212 , B24B37/013 , B24B37/042 , B24B49/12 , G01B7/105 , G01B11/0625 , G01B11/0683 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/67075 , H01L21/67092 , H01L21/67253 , H01L21/76224 , H01L21/76819 , H01L21/7684 , H01L22/12 , H01L22/20
摘要： PROBLEM TO BE SOLVED: To provide a polishing method which can reduce time necessary for re-polishing and which enables an adjusted polishing condition to be directly applied to polishing of the next wafer.SOLUTION: A polishing method of the present embodiment comprises: performing a polishing process of polishing a wafer by use of a polishing part; conveying the polished wafer to a wet film thickness measuring instrument before cleaning and dehydrating the polished wafer; measuring a current thickness of a film by the wet film thickness measuring instrument; comparing the current thickness with a predetermined target value; and performing a re-polishing process of re-polishing the wafer by use of the polishing part before cleaning and dehydrating the wafer when the current thickness does not reach the predetermined target value.
摘要翻译：要解决的问题：提供一种抛光方法，其可以减少再抛光所需的时间，并且可以将调整的抛光条件直接应用于下一个晶片的抛光。解决方案：本实施例的抛光方法包括：执行使用研磨部研磨晶片的抛光工序; 在将抛光的晶片清洁和脱水之前将抛光的晶片传送到湿膜厚度测量仪器; 通过湿膜厚度测量仪测量膜的当前厚度; 将当前厚度与预定目标值进行比较; 以及当当前厚度未达到预定目标值时，在清洗和脱水晶片之前，使用抛光部分进行重新研磨晶片的再抛光处理。

9. 发明专利

JP2006013177A Apparatus and method for electrolytic processing 审中-公开
标题翻译：电解处理装置及方法
公开(公告)号：JP2006013177A
公开(公告)日：2006-01-12
申请号：JP2004188958
申请日：2004-06-25
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI IKUTARO , YASUDA HOZUMI , IIIZUMI TAKESHI , OBATA ITSUKI
IPC分类号： H01L21/306 , B23H3/00 , B23H3/08 , B23H3/10 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To perform processing invariably with good reproducibility without exerting adverse influence on processing characteristics. SOLUTION: An electrolytic processing apparatus includes: a processing electrode 70 freely approaching a workpiece W; a feeding electrode 72 for feeding electricity to the workpiece; a contact member 74 disposed between the workpiece and processing electrode and/or feeding electrode and capable of freely coming into contact with the workpiece; a power source 46 applying a voltage between the processing electrode and feeding electrode; driving parts 56 and 60 which relatively moves the workpiece and processing electrode and/or the feeding electrode; a liquid supply part 76 supplying liquid between the workpiece and processing electrode and/or feeding electrode; a detector 84 detecting the contact state between the contact member and workpiece; and a control unit 86 controlling the quantity of contact between the contact member and workpiece based upon the signal from the detector. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：总是以不错的再现性进行加工，而不会对处理特性产生不利影响。解决方案：电解处理设备包括：处理电极70，其自由地接近工件W; 用于向工件供电的供电电极72; 设置在工件与处理电极和/或供电电极之间并且能够自由地与工件接触的接触构件74; 在处理电极和馈电电极之间施加电压的电源46; 相对移动工件和处理电极和/或馈电电极的驱动部件56和60; 在工件与处理电极和/或供电电极之间供应液体的液体供应部分76; 检测器84，检测接触构件和工件之间的接触状态; 以及控制单元86，其基于来自检测器的信号来控制接触构件和工件之间的接触量。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005264268A Electrochemical machining device and electrochemical machining method 审中-公开
标题翻译：电化学加工设备和电化学加工方法
公开(公告)号：JP2005264268A
公开(公告)日：2005-09-29
申请号：JP2004081178
申请日：2004-03-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NOMICHI IKUTARO , YASUDA HOZUMI , IIIZUMI TAKESHI , OBATA ITSUKI , HIROKAWA KAZUTO , SAITO TAKAYUKI , SUZUKI TSUKURU , TAIMA YASUSHI
IPC分类号： C25F3/00
摘要： PROBLEM TO BE SOLVED: To improve the flattening properties of a machining face by retaining the difference in electric resistance between the recessed part and the projecting part in the surface of the object to be machined. SOLUTION: The electrochemical machining device comprises: a machining electrode 60 capable of freely approaching the object to be machined; a power feeding electrode 62 of feeding power to the object to be machined; a contact member 70 arranged between the object to be machined and the machining electrode, and in which the deformation volume by a contact load to the object to be machined is set to the initial height of the ruggedness in the surface of the object to be machined or lower; a power source 48 of applying voltage between the machining electrode 60 and the power feeding electrode 62; and liquid feeding parts 62a, 62b, 66b, 66c of feeding liquid to at least either the space between the object to be machined and the machining electrode 60 or the power feeding electrode 62. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过保持待加工物体的表面中的凹部与突出部之间的电阻差，来提高加工面的平坦化性能。解决方案：电化学加工装置包括：能够自由接近待加工物体的加工电极60; 向被加工物供给电力的供电电极62; 布置在待加工物体与加工电极之间的接触构件70，其中通过对待加工物体的接触载荷的变形量设定为待加工物体的表面中的粗糙度的初始高度或更低; 在加工电极60和供电电极62之间施加电压的电源48; 以及供液部62a，62b，66b，66c，将液体供给到待加工对象物与加工用电极60或供电电极62之间的空间中的至少任一个。（C）2005，JPO＆NCIPI

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