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1. 发明专利

JP2012004276A Polishing method and polishing device 审中-公开
标题翻译：抛光方法和抛光装置
公开(公告)号：JP2012004276A
公开(公告)日：2012-01-05
申请号：JP2010136875
申请日：2010-06-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI , OTA MASAAKI , KINOSHITA MASATAKA , OBATA ITSUKI
IPC分类号： H01L21/304 , B24B37/013 , B24B49/12
摘要： PROBLEM TO BE SOLVED: To provide a polishing method and a polishing device, capable of accurately detecting a polishing end point of a semiconductor layer such as a silicon layer, using a visible light ray.SOLUTION: The polishing method includes: while polishing the semiconductor layer, irradiating the semiconductor layer with visible light; receiving reflection light from the semiconductor layer; measuring intensity of the reflection light in a predetermined wavelength range; calculating a relative reflectivity by dividing the measured intensity value by predetermined reference intensity; generating a spectrum indicative of relationship between the relative reflectivity and the reflection light wavelength; from the spectrum, obtaining a polishing index that varies with the thickness of the semiconductor layer; and based on a time point when the polishing index reaches a predetermined threshold, completing polishing of the semiconductor layer.
摘要翻译：要解决的问题：提供一种能够使用可见光线精确地检测硅层等半导体层的研磨终点的研磨方法和研磨装置。解决方案：抛光方法包括：在抛光半导体层的同时，用可见光照射半导体层; 接收来自半导体层的反射光; 测量预定波长范围内的反射光的强度; 通过将测量的强度值除以预定的参考强度来计算相对反射率; 产生表示相对反射率和反射光波长之间的关系的光谱; 从光谱获得随着半导体层的厚度而变化的抛光指数; 并且基于抛光指数达到预定阈值的时间点，完成半导体层的抛光。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2009246388A Polishing state monitoring apparatus, polishing apparatus, and method of polishing 有权
标题翻译：抛光状态监测装置，抛光装置和抛光方法
公开(公告)号：JP2009246388A
公开(公告)日：2009-10-22
申请号：JP2009172231
申请日：2009-07-23
申请人： Ebara Corp , Shimadzu Corp , 株式会社島津製作所 , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI , NAKAI SHUNSUKE , TSUJI HITOSHI , TSUKUDA YASURO , ISHIMOTO MASUYOSHI , SHINYA KAZUYA
IPC分类号： H01L21/304 , B24B37/013 , B24B49/04 , B24B49/12
摘要： PROBLEM TO BE SOLVED: To provide a polishing state monitoring apparatus precisely and inexpensively measuring the state of a film adhering to the surface of an object under polishing. SOLUTION: The polishing state monitoring apparatus is provided with: a light source 30; a light emitting optical fiber 32 for irradiating the surface being polished of a semiconductor wafer W with a light from the light source 30; a light receiving optical fiber 34 for receiving the light reflected from the surface being polished of the wafer W; a spectroscope for dividing the received reflected light into a plurality of wavelengths; a light receiving device for accumulating information of the lights of the plurality of the divided wavelengths in a form of electrical information; a spectral data generating section for generating spectral data of the reflected light by reading the electrical information accumulated in the light receiving device; and a calculating section 48 for calculating predetermined characteristic values of the surface under polishing of the semiconductor wafer by calculation including multiplication that multiplies wavelength components of the spectral data generated by the spectral data generating section by respectively predetermined weighting factors. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种抛光状态监测装置，其精确且廉价地测量附着在被研磨物体表面的膜的状态。解决方案：抛光状态监测装置设置有：光源30; 用于利用来自光源30的光照射半导体晶片W被研磨的表面的发光光纤32; 用于接收从晶片W抛光的表面反射的光的光接收光纤34; 用于将接收到的反射光分成多个波长的分光镜; 光接收装置，用于以电信息的形式累积多个划分的波长的光的信息; 光谱数据产生部分，用于通过读取在光接收装置中累积的电信息来产生反射光的光谱数据; 以及计算部分48，用于通过计算来计算在半导体晶片的研磨下的表面的预定特征值，该乘积包括乘以由频谱数据产生部分生成的频谱数据的波长成分乘以预定的加权因子。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2015016540A 膜厚測定装置、膜厚測定方法、および膜厚測定装置を備えた研磨装置有权
标题翻译：薄膜厚度测量装置，薄膜厚度测量方法和装有薄膜厚度测量装置的抛光装置
公开(公告)号：JP2015016540A
公开(公告)日：2015-01-29
申请号：JP2013147089
申请日：2013-07-12
申请人：株式会社荏原製作所 , Ebara Corp
发明人： NOMURA SUEKAZU , IIIZUMI TAKESHI , WATANABE KAZUHIDE , KOBAYASHI YOICHI
IPC分类号： B24B49/12 , B24B37/34 , B24B49/04 , G01B11/06 , H01L21/304
CPC分类号： B24B37/013 , B24B37/005 , B24B37/34 , B24B49/12 , G01B11/0633 , H01L22/12 , H01L22/26
摘要：【課題】膜厚の測定精度を向上させることができる膜厚測定装置および膜厚測定方法を提供する。【解決手段】膜厚測定装置は、基板Wを水平に支持する基板ステージ87と、基板ステージ87上の基板Wの表面全体にリンス水を供給するリンス水供給部90と、基板ステージ87上の基板Wの表面上の測定領域に光を照射し、測定領域からの反射光のスペクトルを生成し、該スペクトルから基板Wの膜厚を決定する膜厚測定ヘッド84と、光の光路上に気体の噴流を形成し、該気体の噴流を測定領域に当てる気体噴射部130とを備える。【選択図】図6
摘要翻译：要解决的问题：提供一种可以提高膜厚测量精度的膜厚测量装置和膜厚测量方法。方法：一种膜厚测量装置，包括：用于水平支撑衬底W的衬底台87; 用于将冲洗水供给到基板台87上的基板W的整个表面上的冲洗水供给部90; 将基板台87上的基板W的表面上的测量区域发光的膜厚测量头84产生从测量区域反射的光谱，并且基于所述测量区域确定基板W的膜厚度光谱; 以及气体注入部分130，其在光学光路上形成气体的喷射流，并将气体的所述喷射流施加到测量区域上。

4. 发明专利

JP2012138442A Polishing apparatus and polishing method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2012138442A
公开(公告)日：2012-07-19
申请号：JP2010289209
申请日：2010-12-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： OBATA ITSUKI , KOBAYASHI YOICHI , ONO KATSUTOSHI , KINOSHITA MASATAKA , KANEUMA TOSHIFUMI
IPC分类号： H01L21/304 , B24B37/005 , B24B37/04 , B24B37/12 , B24B49/12
CPC分类号： B24B37/26 , B24B37/005 , B24B37/013 , B24B37/04 , B24B37/042 , B24B37/10 , B24B49/12 , H01L21/31053 , H01L21/67075 , H01L21/67092 , H01L21/67253 , H01L21/68721 , H01L22/26
摘要： PROBLEM TO BE SOLVED: To provide a polishing apparatus in which highly accurate thickness data can be acquired over the entire surface of a substrate including the center part and the peripheral part thereof.SOLUTION: The polishing apparatus comprises a top ring 24 which presses the surface of a substrate W against a polishing pad 22, a first optical head 13A and a second optical head 13B which irradiate the surface of the substrate W with light from light sources 16a, 16b and receive the reflected light from the substrate W, spectroscopes 14a, 14b which measure the intensity of the reflected light at each wavelength, and a processing section 15 which generates a spectrum indicating the relationship of the intensity and wavelength of the reflected light. The first optical head 13A is positioned so as to face the center of the substrate W held by the top ring 24, and the second optical head 13B is positioned so as to face the peripheral edge of the substrate W held by the top ring 24.
摘要翻译：要解决的问题：提供一种可以在包括其中心部分和其周边部分的基板的整个表面上获得高精度厚度数据的抛光装置。解决方案：抛光装置包括将基板W的表面压靠在抛光垫22上的顶环24，第一光头13A和第二光头13B，其用光照射基板W的表面源16a，16b并且接收来自衬底W的反射光，测量每个波长处的反射光强度的分光器14a，14b，以及生成表示反射的光的强度和波长的关系的光谱的处理部15 光。第一光头13A被定位成面对由顶环24保持的基板W的中心，并且第二光学头13B被定位成面对由顶环24保持的基板W的周边边缘。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011009679A Polishing end point detecting method and polishing end point detecting device, and polishing method and polishing device 有权
标题翻译：抛光端点检测方法和抛光端点检测装置，抛光方法和抛光装置
公开(公告)号：JP2011009679A
公开(公告)日：2011-01-13
申请号：JP2009184271
申请日：2009-08-07
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KANEUMA TOSHIFUMI , KOBAYASHI YOICHI , KINOSHITA MASATAKE , OTA MASAAKI
IPC分类号： H01L21/304 , B24B37/013 , B24B37/30 , B24B49/04 , B24B49/12
摘要： PROBLEM TO BE SOLVED: To provide a polishing end point detecting method and a polishing end point detecting device that can detect an accurate polishing end point by using the variation (degradation) of polishing rate.SOLUTION: The polishing end point detecting method includes: irradiating a surface of a substrate with light during polishing of the substrate having a film and receiving reflected light returning from the substrate to measure reflection intensity of the reflected light for each wavelength; generating a spectral profile showing the relation between the reflection intensity and wavelength with respect to the film based upon the reflection intensity; extracting at least one extreme value point showing an extreme value of the reflection intensity from the spectral profile; repeating generation of a spectral profile and extraction of an extreme value during the polishing to acquire a plurality of spectral profiles and a plurality of extreme points; and detecting the polishing end point based upon amounts of relative variation in extreme value between the plurality of spectral profiles.
摘要翻译：要解决的问题：提供抛光终点检测方法和抛光终点检测装置，其可以通过使用抛光速率的变化（劣化）来检测精确的抛光终点。抛光终点检测方法包括：照射在具有膜的衬底的研磨期间具有光的衬底的表面，并且接收从衬底返回的反射光，以测量每个波长的反射光的反射强度; 基于反射强度产生表示相对于膜的反射强度和波长之间的关系的光谱分布; 从光谱轮廓提取表示反射强度的极值的至少一个极值点; 在抛光期间重复产生光谱轮廓和提取极值以获得多个光谱轮廓和多个极值点; 并且基于所述多个光谱轮廓之间的极值的相对变化量来检测抛光终点。

6. 发明专利

JP2010240837A Polishing method and polishing apparatus 审中-公开
标题翻译：抛光方法和抛光装置
公开(公告)号：JP2010240837A
公开(公告)日：2010-10-28
申请号：JP2010141522
申请日：2010-06-22
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： SHIMIZU NOBU , OTA MASAAKI , MARUYAMA KOJI , KOBAYASHI YOICHI , MITANI RYUICHIRO , NAKAI SHUNSUKE , SHIGETA ATSUSHI
IPC分类号： B24B37/013 , B24B37/10 , B24B49/10 , B24B49/12 , H01L21/304
CPC分类号： B24B49/04 , B24B37/013 , B24B49/12 , B24B49/16 , B24D7/12 , G01B11/0675 , G01N21/55 , G01N21/9501 , G05B19/406 , G05B19/4065 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a polishing method and a polishing apparatus capable of achieving an accurate polishing end point detection and a uniform film thickness by reducing an influence on sensor output signals affected by areas with different pattern densities and structures or by variation of circumferential film thickness generated in a film forming process. SOLUTION: The polishing method includes processes for holding and rotating an object to be polished by a top ring 114, pressing the object W to be polished to a polishing surface on a rotating polishing table 112 to polish the object W, and monitoring a surface state of the object W under polishing by a sensor 150 installed at the polishing table 112. The rotating speed of the top ring 114 and polishing table 112 is set so that a locus described on the surface of the object W by the sensor 150 within a predetermined measuring time is distributed substantially uniformly over the entire circumference of the surface of the object W. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种抛光方法和抛光装置，其能够通过减小对由具有不同图案密度和结构的区域影响的传感器输出信号的影响来实现精确的抛光终点检测和均匀的膜厚度，或者通过在成膜过程中产生的周向膜厚度的变化。解决方案：抛光方法包括通过顶环114保持和旋转待抛光物体的工艺，将要抛光的物体W按压在旋转的抛光台112上的抛光表面上以抛光物体W，并监视通过安装在研磨台112上的传感器150在研磨对象物W的表面状态。顶环114和研磨台112的旋转速度被设定为使得通过传感器150在物体W的表面上描述的轨迹在预定的测量时间内基本上均匀地分布在物体W的表面的整个圆周上。（C）2011年，JPO和INPIT

7. 发明专利

JP2010186866A Polishing method 审中-公开
标题翻译：抛光方法
公开(公告)号：JP2010186866A
公开(公告)日：2010-08-26
申请号：JP2009029993
申请日：2009-02-12
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI , TADA MITSUO , TAKAHASHI TARO , HAYASHI EISAKU , WATANABE HIROMITSU , KOHAMA TATSUYA , KOBATA ITSUKI , OTA MASAAKI
IPC分类号： H01L21/304 , B24B37/07 , B24B37/10 , B24B49/04 , B24B49/10
摘要： PROBLEM TO BE SOLVED: To provide a polishing method correctly polishing metal wiring by a desired amount. SOLUTION: This polishing method polishes a substrate W having an insulation film 903 having grooves 905, a barrier film 906 formed on the insulation film 903, and a metal film 907 formed on the barrier film 906, wherein partial parts of the metal film 907 are formed in the grooves 905 as metal wiring 910. The polishing method includes: a first polishing process of removing the metal film 907; a second polishing process of removing the barrier film 906 after the first polishing process; a third polishing process of polishing the insulation film 903 and the metal wiring 910 after the second polishing process; a measurement process of measuring the height of the metal wiring 910 by an eddy current sensor after the third polishing process is ended; and an adjustment process of adjusting a polishing time of a subsequent substrate based on a measurement value obtained from the measurement process. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种正确地抛光金属布线所需量的抛光方法。解决方案：该抛光方法抛光具有凹槽905的绝缘膜903，形成在绝缘膜903上的阻挡膜906和形成在阻挡膜906上的金属膜907的基板W，其中金属的部分部分膜907形成在槽905中作为金属布线910.抛光方法包括：去除金属膜907的第一抛光工艺; 在第一抛光处理之后去除阻挡膜906的第二抛光工艺; 在第二抛光工艺之后抛光绝缘膜903和金属布线910的第三抛光工艺; 第三研磨处理结束后，通过涡电流传感器测量金属布线910的高度的测量处理; 以及基于从测量处理获得的测量值来调整后续衬底的抛光时间的调整过程。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010115726A Method of making diagram for use in selection of wavelength of light for detecting polishing endpoint, method for selecting wavelength of light, method for detecting polishing endpoint, device for detecting polishing endpoint, and polishing device 有权
标题翻译：用于选择用于检测抛光端点的光的波长的图的选择方法，用于选择光的波长的方法，用于检测抛光端点的方法，用于检测抛光端点的装置和抛光装置
公开(公告)号：JP2010115726A
公开(公告)日：2010-05-27
申请号：JP2008288704
申请日：2008-11-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KOBAYASHI YOICHI , SHIMIZU NOBU , OTA MASAAKI
IPC分类号： B24B37/013 , B24B49/12 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method for efficiently selecting the most suitable wavelength of light for detecting optical polishing endpoint. SOLUTION: A method of making a diagram for use in selecting the wavelength of light in optical polishing end point detection is provided. The method includes the steps of: polishing a surface of a substrate with a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during polishing of the substrate; calculating the relative reflectance of the reflected light for each wavelength; obtaining the wavelength of the reflected light indicating a local maximum point and a local minimum point of the relative reflectance varying with a polishing time; identifying a point of time when the wavelength indicating the local maximum point and the local minimum point is obtained; and plotting a coordinate, predetermined by the obtained wavelength and the corresponding point of time, onto a coordinate system with coordinate axes indicating the wavelength of light and polishing time. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于有效选择用于检测光学抛光终点的最适合的波长的光的方法。提供了一种在光学抛光终点检测中制作用于选择光的波长的图的方法。该方法包括以下步骤：通过抛光垫用膜研磨衬底的表面; 在基板的抛光过程中将光施加到基板的表面并接收来自基板的反射光; 计算每个波长的反射光的相对反射率; 获得表示局部最大点的反射光的波长和相对反射率的局部最小点随着抛光时间而变化; 识别当获得指示局部最大点和局部最小点的波长时的时间点; 并将由所获得的波长和对应的时间点预定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009277888A Polishing method 有权
标题翻译：抛光方法
公开(公告)号：JP2009277888A
公开(公告)日：2009-11-26
申请号：JP2008127811
申请日：2008-05-15
申请人： Ebara Corp , 株式会社荏原製作所
发明人： OTA MASAAKI , TADA MITSUO , SHIMIZU NOBU , KOBAYASHI YOICHI
IPC分类号： H01L21/304 , B24B37/00 , B24B37/013
摘要： PROBLEM TO BE SOLVED: To provide a polishing method can finish a polishing work when a desired amount of polishing has been done for an insulating film such as a hard mask film. SOLUTION: This invention relates to a polishing method for polishing a substrate having an insulating film with a groove, a barrier film formed on the insulating film, and a metal film formed on the barrier film; while part of the metal film is formed in the groove as a metal wiring. This polishing method includes: a first polishing process to remove the metal film, a second polishing process to remove the barrier film after the first polishing process, and a third polishing process to polish the insulating film after the second polishing process. During the second polishing process and third polishing process, the polishing state of the substrate is monitored by an eddy current sensor. When the output signal value of the eddy current sensor reaches a predetermined threshold, the third polishing process terminates. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种抛光方法，可以在对硬掩模膜等绝缘膜进行所需量的抛光时完成抛光工作。解决方案本发明涉及一种用于抛光具有沟槽的绝缘膜的衬底，形成在绝缘膜上的阻挡膜和形成在阻挡膜上的金属膜的抛光方法; 而金属膜的一部分形成在槽中作为金属布线。该抛光方法包括：去除金属膜的第一抛光工艺，在第一抛光工艺之后去除阻挡膜的第二抛光工艺，以及在第二抛光工艺之后抛光绝缘膜的第三抛光工艺。在第二抛光工艺和第三抛光工艺期间，通过涡流传感器来监测衬底的抛光状态。当涡电流传感器的输出信号值达到预定阈值时，第三抛光处理结束。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009129970A Polishing apparatus and polishing method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2009129970A
公开(公告)日：2009-06-11
申请号：JP2007300511
申请日：2007-11-20
申请人： Ebara Corp , 株式会社荏原製作所
发明人： OTA MASAAKI , SHIMIZU NOBU , KOBAYASHI YOICHI
IPC分类号： H01L21/304 , B24B37/013 , B24B49/12
CPC分类号： B24B37/005 , B24B49/12 , B24B49/16 , H01L21/3212 , H01L22/12 , H01L22/26
摘要： PROBLEM TO BE SOLVED: To polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering the throughput. SOLUTION: A polishing apparatus includes: a polishing table 100 having a polishing surface; a top ring 10 for holding a workpiece to be polished having a surface conductive film 6, and slidably pressing the conductive film 6 against the polishing surface to polish the conductive film 6; an optical sensor 130 for monitoring the polishing state of the conductive film 6 by emitting light toward the conductive film 6 of the workpiece held by the top ring 10, receiving reflected light from the conductive film 6, and measuring a change in the reflectance in the reflected light; and a control section 132 for controlling a pressure at which the workpiece is pressed on the polishing surface. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：抛光和除去额外的导电膜，同时防止腐蚀的发生并且不降低生产量。抛光装置包括：具有抛光表面的抛光台100; 用于保持具有表面导电膜6的待抛光工件的顶环10，并且将导电膜6可滑动地压靠在抛光表面上以抛光导电膜6; 光学传感器130，用于通过向由顶环10保持的工件的导电膜6发射光，接收来自导电膜6的反射光，并测量其中的反射率的变化来监测导电膜6的抛光状态反射光; 以及用于控制工件在研磨面上被按压的压力的控制部132。版权所有（C）2009，JPO＆INPIT

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