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    • 2. 发明申请
    • POLARIZER AND A METHOD FOR FORMING THE SAME
    • 偏振器及其形成方法
    • WO2015056191A1
    • 2015-04-23
    • PCT/IB2014/065338
    • 2014-10-15
    • EULITHA A.G.SOLAK, HarunWANG, Li
    • SOLAK, HarunWANG, Li
    • G02B5/18G02B5/30
    • G02B5/3058G02B5/1809
    • A method for manufacturing a bi-layer wire-grid polarizer, which method includes forming a periodic pattern of alternating and parallel pre-formed lines and grooves on a surface of a substrate, depositing polarizing material onto the pattern to form a top wire of polarizing material having a first width on the top of each pre-formed line and a bottom wire of polarizing material having a second width on the bottom of each groove, each top wire and each of its neighbouring bottom wires having a lateral separation between them, and enlarging the lateral separation between each top wire and each of its neighbouring bottom wires by at least one of increasing the period of the periodic pattern and reducing the first and second widths of the respective top and bottom wires, whereby certain desired transmission and/or polarization properties of the bi-layer wire-grid polarizer are obtained.
    • 一种用于制造双层线栅偏振器的方法,该方法包括在衬底的表面上形成交替和平行的预制线和凹槽的周期性图案,将偏振材料沉积到图案上以形成极化的顶部线 在每个预成形线的顶部具有第一宽度的材料和在每个凹槽的底部上具有第二宽度的偏振材料的底部线,每个顶部线及其每个相邻的底部线在它们之间具有横向间隔;以及 通过增加周期性图案的周期并减小相应的顶部和底部线的第一和第二宽度中的至少一个来扩大每个顶部线及其每个相邻底部线之间的横向间隔,由此某些期望的透射和/或极化 获得双层线栅偏振器的特性。
    • 9. 发明申请
    • METHOD FOR FABRICATING INGAN-BASED MULTI-QUANTUM WELL LAYERS
    • 用于制造基于多元素的多层厚层的方法
    • WO2010020065A1
    • 2010-02-25
    • PCT/CN2008/001488
    • 2008-08-19
    • LATTICE POWER (JIANGXI) CORPORATIONJIANG, FengyiWANG, LiMO, ChunlanFANG, Wenqing
    • JIANG, FengyiWANG, LiMO, ChunlanFANG, Wenqing
    • H01L33/30C23C16/34H01L33/04H01L21/205H01L21/365
    • H01L21/0262H01L21/0254H01L33/007H01L33/06
    • A method for fabricating quantum wells by using indium gallium nitride (InGaN) semiconductor material includes fabricating a potential well on a layered group III-V nitride structure at a first predetermined temperature in a reactor chamber by injecting into the reactor chamber an In precursor gas and a Ga precursor gas. The method further includes, subsequent to the fabrication of the potential well, terminating the Ga precursor gas, maintaining a flow of the In precursor gas, and increasing the temperature in the reactor chamber to a second predetermined temperature while adjusting the In precursor gas flow rate from a first to a second flow rate. In addition, the method includes annealing and stabilizing the potential well at the second predetermined temperature while maintaining the second flow rate. The method also includes fabricating a potential barrier above the potential well at the second predetermined temperature while resuming the Ga precursor gas.
    • 通过使用氮化镓铟(InGaN)半导体材料制造量子阱的方法包括在反应器室中以第一预定温度在层状III-V族氮化物结构中制造势阱,通过将反应器中的In前体气体注入到 一种Ga前体气体。 该方法还包括在制造势阱之后,终止Ga前体气体,保持In前体气体的流动,并将反应器室中的温度升高到第二预定温度,同时调节In前体气体流速 从第一流量到第二流量。 此外,该方法包括在维持第二流量的同时在第二预定温度下退火和稳定势阱。 该方法还包括在恢复Ga前体气体的同时在第二预定温度下制造位于势阱上方的势垒。