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1. 发明申请

WO2004113020A1 SUBSTRATE POLISHING APPARATUS AND SUBSTRATE POLISHING METHOD 审中-公开
标题翻译：基板抛光装置和底板抛光方法
公开(公告)号：WO2004113020A1
公开(公告)日：2004-12-29
申请号：PCT/JP2004/008855
申请日：2004-06-17
申请人： EBARA CORPORATION , TOGAWA, Tetsuji , FUKAYA, Koichi , TADA, Mitsuo , TAKAHASHI, Taro , SUTO, Yasunari
发明人： TOGAWA, Tetsuji , FUKAYA, Koichi , TADA, Mitsuo , TAKAHASHI, Taro , SUTO, Yasunari
IPC分类号： B24B37/00
CPC分类号： B24B37/013 , B24B49/105 , B24B49/12 , B24B49/16
摘要： The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).
摘要翻译：本发明涉及一种用于将诸如半导体晶片的基板抛光到平整的基板抛光装置和基板抛光方法。基板研磨装置具备：具有抛光面（101）的研磨台（100），将基板（W）保持并压靠在研磨台（100）的研磨面（101）上的基板保持架（1），以及用于测量衬底（W）上的膜的厚度的膜厚测量装置（200）。衬底保持器（1）具有多个压力可调节室（22〜25），并且基于由膜厚测量装置（200）测量的膜厚调节各个室（22至25）中的压力。

2. 发明申请

WO2005115689A1 SUBSTRATE PERIPHERAL PORTION MEASURING DEVICE AND METHOD, SUBSTRATE PERIPHERAL PORTION POLISHING APPARATUS AND METHOD, AND SUBSTRATE RINSING APPARATUS AND METHOD 审中-公开
标题翻译：基板外围部分测量装置和方法，基板外围部分抛光装置和方法以及基板冲压装置和方法
公开(公告)号：WO2005115689A1
公开(公告)日：2005-12-08
申请号：PCT/JP2005/009821
申请日：2005-05-23
申请人： EBARA CORPORATION , TADA, Mitsuo , SUTO, Yasunari , ICHIHARA, Hirofumi , ITO, Kenya , TAKAHASHI, Tamami
发明人： TADA, Mitsuo , SUTO, Yasunari , ICHIHARA, Hirofumi , ITO, Kenya , TAKAHASHI, Tamami
IPC分类号： B24B49/12
CPC分类号： H01L21/67242 , B24B9/065 , B24B49/12 , G01N21/9501 , G01N29/44 , H01L21/67023 , H01L21/67075
摘要： A projecting/receiving unit (52) projects a laser light to a peripheral portion (30) and receives the reflected light while a liquid is being fed to a substrate (14) and is flowing on the peripheral portion (30). A signal processing controller (54) processes the electric signal of the reflected light to decide the state of the peripheral portion (30). The state of the peripheral portion being polished is monitored. Moreover, the polish end point is detected. A transmission wave other than the laser light may also be used. The peripheral portion (30) may also be enclosed by a passage forming member thereby to form a passage properly. The peripheral portion can be properly measured even in the situation where the liquid is flowing on the substrate peripheral portion.
摘要翻译：投射/接收单元（52）将激光投射到周边部分（30）并且在液体被供给到基板（14）的同时接收反射光并在周边部分（30）上流动。信号处理控制器（54）处理反射光的电信号以决定周边部分（30）的状态。监视被抛光的周边部分的状态。此外，检测到抛光终点。也可以使用激光以外的透射波。周边部分（30）也可以由通道形成部件包围，从而适当地形成通道。即使在液体在基板周边部分上流动的情况下，也可以适当地测量周边部分。

3. 发明申请

WO2005038391A1 EDDY CURRENT SENSOR 审中-公开
标题翻译： EDDY电流传感器
公开(公告)号：WO2005038391A1
公开(公告)日：2005-04-28
申请号：PCT/JP2004/015753
申请日：2004-10-18
申请人： EBARA CORPORATION , TADA, Mitsuo , SUTO, Yasunari
发明人： TADA, Mitsuo , SUTO, Yasunari
IPC分类号： G01B7/06
CPC分类号： G01B7/105
摘要： An eddy current sensor (10) has a sensor coil (100) disposed near a conductive film (6) formed on a semiconductor wafer (W) and a signal source (124) configured to supply an AC signal to the sensor coil (100) to produce an eddy current in the conductive film (6). The eddy current sensor (10) includes a detection circuit operable to detect the eddy current produced in the conductive film (6). The detection circuit is connected to the sensor coil (100). The eddy current sensor (10) also includes a housing (200) made of a material having a high magnetic permeability. The housing (200) accommodates the sensor coil (100) therein. The housing (200) is configured so that the sensor coil (100) forms a path of a magnetic flux (MF) so as to effectively produce an eddy current in the conductive film (6).
摘要翻译：涡电流传感器（10）具有设置在形成在半导体晶片（W）上的导电膜（6）附近的传感器线圈（100）和被配置为向传感器线圈（100）提供AC信号的信号源（124）以在导电膜（6）中产生涡流。涡流传感器（10）包括可操作以检测在导电膜（6）中产生的涡流的检测电路。检测电路连接到传感器线圈（100）。涡流传感器（10）还包括由具有高磁导率的材料制成的壳体（200）。壳体（200）容纳传感器线圈（100）。壳体（200）构造成使得传感器线圈（100）形成磁通（MF）的路径，以便有效地在导电膜（6）中产生涡流。

4. 发明申请

WO2004111572A1 MEASURING APPARATUS 审中-公开
标题翻译：测量装置
公开(公告)号：WO2004111572A1
公开(公告)日：2004-12-23
申请号：PCT/JP2004/008467
申请日：2004-06-10
申请人： EBARA CORPORATION , TADA, Mitsuo , SUTO, Yasunari
发明人： TADA, Mitsuo , SUTO, Yasunari
IPC分类号： G01B15/02
CPC分类号： G01N22/00 , G01B15/02
摘要： The present invention relates to a measuring apparatus for measuring a thickness or the like of a thin film formed on a surface of a substrate such as a semiconductor wafer. The measuring apparatus includes a microwave emission device (40) for emitting a microwave to a substance , a microwave generator (45) for supplying the microwave to the microwave emission device (40), a detector (47) for detecting an amplitude or a phase of the microwave which has been reflected from or passed through the substance, and an analyzer (48) for analyzing a structure of the substance based on the amplitude or the phase of the microwave which has been detected by the detector (47).
摘要翻译：本发明涉及一种用于测量形成在诸如半导体晶片的基板的表面上的薄膜的厚度等的测量装置。测量装置包括用于向物质发射微波的微波发射装置（40），用于向微波发射装置（40）提供微波的微波发生器（45），用于检测振幅或相位的检测器的已经从物质反射或通过的微波的分析器（48），以及用于基于由检测器（47）检测到的微波的振幅或相位来分析物质的结构的分析器（48）。

5. 发明授权

EP1676094B1 EDDY CURRENT SENSOR 有权
标题翻译：涡流传感器
公开(公告)号：EP1676094B1
公开(公告)日：2015-12-23
申请号：EP04792890.8
申请日：2004-10-18
申请人： EBARA CORPORATION
发明人： TADA, Mitsuo , SUTO, Yasunari
IPC分类号： G01B7/06 , H01L21/304
CPC分类号： G01B7/105

6. 发明公开

EP1048755A1 PLATING DEVICE AND METHOD OF CONFIRMING CURRENT FEED 审中-公开
标题翻译：平顶山庄VERFHREN ZURBESTÄTIGUNGDER STROMZUFUHR
公开(公告)号：EP1048755A1
公开(公告)日：2000-11-02
申请号：EP98961353.4
申请日：1998-12-16
申请人： Ebara Corporation
发明人： YOSHIOKA, Junichiro , SENDAI, Satoshi , CHONO, Atsushi , TADA, Mitsuo , HONGO, Akihisa , MUKAIYAMA, Yoshitaka , TOMIOKA, Kenya , OGATA, Akira , SUZUKI, Kenichi , OZAWA, Naomitsu
IPC分类号： C25D17/08 , C25D5/08 , C25D21/12 , G01R27/02
CPC分类号： G01R31/026 , C25D21/12
摘要： The present invention provides a conductivity sensing device capable of detecting the conductivity (contact state) of the plurality of feeder contacts contacting the conductive area of the substrate, and a plating apparatus capable of forming a plating film of uniform thickness by supplying a uniform plating current through a plurality of feeder contacts.
In the plating apparatus, an anode 13 is disposed in a plating bath; a substrate 12 is mounted in a jig and disposed in the plating bath opposite the anode 13; and a plurality of feeder contacts 15 is contacting the conductive region formed on the surface of the substrate 12. A predetermined voltage is applied between the anode 13 and feeder contacts 15 to supply a plating current through the feeder contacts 15 for plating the substrate 12. The plating apparatus also includes a conductivity sensor 22 for detecting the state of conductivity between each of the feeder contacts 15 and the conductive region on the substrate 12.
摘要翻译：本发明提供一种电导率检测装置，其能够检测与基板的导电区域接触的多个馈电触头的导电性（接触状态），以及能够通过提供均匀电镀电流形成均匀厚度的镀膜的电镀装置通过多个馈线接触。在电镀装置中，阳极13设置在镀浴中; 基板12安装在夹具中并且设置在与阳极13相对的电镀槽中; 并且多个馈电触头15与形成在基板12的表面上的导电区域接触。在阳极13和馈电触头15之间施加预定电压，以通过馈电触头15提供电镀电流，以电镀基板12。电镀装置还包括用于检测馈电触头15和基板12上的导电区域之间的导电性状态的电导率传感器22。

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