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1. 发明公开

EP1296351A1 CHARGED PARTICLE BEAM INSPECTION APPARATUS AND METHOD FOR FABRICATING DEVICE USING THAT INSPECTION APPARATUS 审中-公开
标题翻译：检查设备的带电粒子和方法的用于制造部件与本次调查DEVICE
公开(公告)号：EP1296351A1
公开(公告)日：2003-03-26
申请号：EP01943833.2
申请日：2001-06-27
申请人： EBARA CORPORATION , Nikon Corporation
发明人： NAKASUJI, Mamoru , NOJI, Nobuharu , SATAKE, Tohru , KIMBA, Toshifumi , SOBUKAWA, Hirosi , YOSHIKAWA, Shoji , KARIMATA, Tsutomu , OOWADA, Shin , SAITO, Mutsumi , HAMASHIMA, Muneki , TAKAGI, Toru
IPC分类号： H01J37/29 , H01J37/244 , H01J37/20 , G01B15/00 , H01L21/66 , G01N23/225
CPC分类号： G03F7/70616 , G01N23/225 , H01J37/05 , H01J37/06 , H01J37/073 , H01J37/075 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/226 , H01J37/244 , H01J37/28 , H01J2237/0435 , H01J2237/057 , H01J2237/06316 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/248 , H01J2237/2482 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

2. 发明公开

EP1261016A1 ELECTRON BEAM DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD USING THE DEVICE 审中-公开
标题翻译： ELECTRON DEVICE而那些使用的半导体模块的制造方法
公开(公告)号：EP1261016A1
公开(公告)日：2002-11-27
申请号：EP01980965.6
申请日：2001-11-02
申请人： EBARA CORPORATION , Nikon Corporation
发明人： NAKASUJI, Mamoru , NOJI, Nobuharu , SATAKE, Tohru , HAMASHIMA, Muneki , HATAKEYAMA, Masahiro , WATANABE, Kenji , KATO, Takao , SOBUKAWA, Hirosi , KARIMATA, Tsutomu , YOSHIKAWA, Shoji , KIMBA, Toshifumi , OOWADA, Shin , SAITO, Mutsumi
IPC分类号： H01J37/063 , H01J37/29 , H01L21/027 , H01L21/66
CPC分类号： B82Y10/00 , B82Y40/00 , G01N23/225 , H01J37/06 , H01J37/063 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J37/3174 , H01J2237/0435 , H01J2237/0635 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/2446 , H01J2237/24485 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

3. 发明公开

EP1273907A1 WAFER INSPECTING METHOD, WAFER INSPECTING INSTRUMENT, AND ELECTRON BEAM APPARATUS 审中-公开
标题翻译：手段和工具晶片检测和ELECTRON DEVICE
公开(公告)号：EP1273907A1
公开(公告)日：2003-01-08
申请号：EP01980963.1
申请日：2001-11-02
申请人： Ebara Corporation , Nikon Corporation
发明人： NAKASUJI, Mamoru , NOJI, Nobuharu , SATAKE, Tohru , HAMASHIMA, Muneki , KIMBA, Toshifumi , HATAKEYAMA, Masahiro , WATANABE, Kenji , SOBUKAWA, Hirosi , KARIMATA, Tsutomu , YOSHIKAWA, Shoji , OOWADA, Shin , SAITO, Mutsumi
IPC分类号： G01N23/225 , H01J37/28
CPC分类号： G01N23/225 , H01J37/06 , H01J37/073 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention relates to a substrate inspection apparatus for inspecting a pattern formed on a substrate by irradiating a charged particle beam onto the substrate. The substrate inspection apparatus comprises: an electron beam apparatus including a charged particle beam source for emitting a charged particle beam, a primary optical system for irradiating the charged particle beam onto the substrate, a secondary optical system into which a secondary charged particle beam is introduced, the secondary charged particle beam being emitted from the substrate by an irradiation of the charged particle beam, a detection system for detecting the secondary charged particle beam introduced into said secondary optical system and outputting as an electric signal, and a process control system for processing and evaluating the electric signal; a stage unit for holding the substrate and moving the substrate relatively to said electron beam apparatus; a working chamber capable of shielding at least an upper region of the stage unit form outside to control under desired atmosphere; and a substrate load-unload mechanism for transferring the substrate into or out of the stage.

4. 发明公开

EP1271606A1 ELECTRON BEAM APPARATUS AND DEVICE PRODUCTION METHOD USING THE APPARATUS 审中-公开
标题翻译： ELECTRON DEVICE及其制造方法组件通过这样的设备来
公开(公告)号：EP1271606A1
公开(公告)日：2003-01-02
申请号：EP01980966.4
申请日：2001-11-02
申请人： EBARA CORPORATION , Nikon Corporation
发明人： NAKASUJI, Mamoru , SATAKE, Tohru , NOJI, Nobuharu , HAMASHIMA, Muneki , OKUBO, Yukiharu , KOHAMA, Yoshiaki , SOBUKAWA, Hirosi , KARIMATA, Tsutomu , YOSHIKAWA, Shoji , KIMBA, Toshifumi , OOWADA, Shin , SAITO, Mutsumi
IPC分类号： H01J37/29 , H01L21/027 , H01L21/66
CPC分类号： H01J37/20 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/185 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc.. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible. To provide high accuracy, the apparatus is configured such that the axes of its optical systems can be aligned, and aberrations corrected, by a variety of methods.

5. 发明公开

EP1271605A1 ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING THE APPARATUS 审中-公开
标题翻译： ELECTRON DEVICE AND METHOD FOR制造半导体器件的通过这样的设备来。
公开(公告)号：EP1271605A1
公开(公告)日：2003-01-02
申请号：EP01980964.9
申请日：2001-11-02
申请人： Ebara Corporation , Nikon Corporation
发明人： NAKASUJI, Mamoru , SATAKE, Tohru , WATANABE, Kenji , MURAKAMI, Takeshi , NOJI, Nobuharu , SOBUKAWA, Hirosi , KARIMATA, Tsutomu , YOSHIKAWA, Shoji , KIMBA, Toshifumi , OOWADA, Shin , SAITO, Mutsumi , HAMASHIMA, Muneki , TAKAGI, Toru , KIHARA, Naoto , NISHIMURA, Hiroshi
IPC分类号： H01J37/29 , H01L21/027 , H01L21/66
CPC分类号： H01J37/185 , G01N23/225 , G01N23/2251 , H01J37/06 , H01J37/073 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817
摘要： The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system. The electron beam apparatus comprises a multi-beam generator included in the primary electro-optical system for generating electrons emitted from an electron gun as a plurality of primary electron beams, a scanning deflector included in the primary electro-optical system for simultaneously scanning the plurality of primary electron beams on the sample, an objective lens included commonly in the primary electro-optical system and the secondary electro-optical system for decelerating the plurality of primary electron beams for irradiation to the sample, and for accelerating a plurality of secondary electron beams emitted from points of the sample irradiated with the primary electron beams, a secondary electron beam separator included in the primary electro-optical system and the secondary electro-optical system for deflecting the plurality of secondary electron beams passing through the objective lens from the primary electro-optical system to the secondary electro-optical system, at least one stage of magnification lens included in the secondary electro-optical system for enlarging the plurality of deflected secondary electron beams, and a plurality of detectors included in the detecting system and provided corresponding to the plurality of secondary electron beams from the secondary electro-optical system for detecting the secondary electron beams.

6. 发明授权

EP1914787B1 DETECTION DEVICE AND INSPECTION DEVICE 有权
标题翻译：检测装置及检测装置
公开(公告)号：EP1914787B1
公开(公告)日：2015-02-11
申请号：EP06782616.4
申请日：2006-08-10
申请人： EBARA CORPORATION
发明人： HATAKEYAMA, Masahiro , YOSHIKAWA, Shoji , SUEMATSU, Kenichi , KARIMATA, Tsutomu , NOJI, Nobuharu
IPC分类号： H01J37/244 , H01J37/28 , H01L21/66 , G01R31/302
CPC分类号： H01J37/261 , H01J37/244 , H01J37/28 , H01J2237/2441 , H01J2237/2446

7. 发明公开

EP1296352A1 CHARGED PARTICLE BEAM INSPECTION APPARATUS AND METHOD FOR FABRICATING DEVICE USING THAT INSPECTION APPARATUS 审中-公开
标题翻译：带电粒子束检测装置及使用该装置进行装置制造的方法
公开(公告)号：EP1296352A1
公开(公告)日：2003-03-26
申请号：EP01945627.6
申请日：2001-06-27
申请人： EBARA CORPORATION , Kabushiki Kaisha Toshiba
发明人： NAKASUJI, Mamoru , NOJI, Nobuharu , SATAKE, Tohru , HATAKEYAMA, Masahiro , KIMBA, Toshifumi , SOBUKAWA, Hirosi , YOSHIKAWA, Shoji , MURAKAMI, Takeshi , WATANABE, Kenji , KARIMATA, Tsutomu , OOWADA, Shin , SAITO, Mutsumi , YAMAZAKI, Yuichiro , NAGAI, Takamitsu , NAGAHAMA, Ichirota
IPC分类号： H01J37/29 , H01J37/244 , H01J37/20 , G01B15/00 , H01L21/66 , G01N23/225
CPC分类号： H01J29/70 , G01N23/225 , G01N23/2251 , G01N23/227 , H01J37/06 , H01J37/073 , H01J37/141 , H01J37/185 , H01J37/20 , H01J37/222 , H01J37/244 , H01J37/266 , H01J37/28 , H01J2237/082 , H01J2237/202 , H01J2237/20228 , H01J2237/204 , H01J2237/22 , H01J2237/24564 , H01J2237/2806 , H01J2237/2816 , H01J2237/2817 , H01L21/6719 , H01L21/67213
摘要： An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere;
at least two loading chambers 41,42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要翻译：电子束检查装置包括：电子光学装置70，其具有用于从电子束源照射一次电子束的电子光学系统和用于检测由电子束照射装置投射的二次电子图像的检测器，光学系统; 台系统50，用于相对于电子光学系统保持和移动物体; 微型环境室20，用于向物体提供清洁气体以防止灰尘与物体接触; 用于容纳台装置的工作室31，该工作室可控制以具有真空气氛; 设置在微型环境室和工作室之间的至少两个装载室41,42，其适于独立地控制以便具有真空气氛; 以及用于通过装载室将物体传送到台系统的装载器60。

8. 发明公开

EP1335038A1 DEVICE AND METHOD FOR ELECTROLESS PLATING 审中-公开
标题翻译：用于化学镀的装置和方法
公开(公告)号：EP1335038A1
公开(公告)日：2003-08-13
申请号：EP01978884.3
申请日：2001-10-24
申请人： Ebara Corporation
发明人： HONGO, Akihisa , MISHIMA, Koji , INOUE, Hiroaki , KIMURA, Norio , KARIMATA, Tsutomu
IPC分类号： C23C18/16 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76843 , C23C18/1619 , C23C18/1669 , C23C18/1678 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： The present invention relates to an electroless plating apparatus which can easily form a plated film having more uniform thickness on a surface, to be plate, of a material to be plated. The present invention comprises a holding portion (10) having a heating portion (14) for holding a material to be plated in such a state that a surface to be plated faces downward, and a plating bath (24) for introducing an electroless plating liquid (22) having a predetermined temperature into a plating chamber (28), and holding the electroless plating liquid while allowing the electroless plating liquid to overflow an overflow dam, wherein the material, to be plated, held by the holding portion (10) is brought into contact with the plating liquid (22) in the plating bath (24) to plate the material.
摘要翻译：本发明涉及一种能够容易地形成待镀材料的表面上具有更均匀厚度的镀膜的镀化学镀装置。本发明包括具有加热部分（14）的保持部分（10），该加热部分用于以被镀表面朝下的状态保持待镀材料，以及镀槽（24），用于将无电镀液（22）中的预定温度进入电镀室（28），并且在使化学镀液体溢出溢流坝的同时夹持化学镀液体，其中由夹持部分（10）夹持的待电镀材料是与镀浴（24）中的电镀液（22）接触以镀覆材料。

9. 发明公开

EP1271604A1 INSPECTION APPARATUS AND INSPECTION METHOD WITH ELECTRON BEAM, AND DEVICE MANUFACTURING METHOD COMPRISING THE INSPECTION APPARATUS 审中-公开
标题翻译：检查设备及调查过程与调查装置中的电子和元器件制造工艺
公开(公告)号：EP1271604A1
公开(公告)日：2003-01-02
申请号：EP01978999.9
申请日：2001-11-02
申请人： EBARA CORPORATION , Kabushiki Kaisha Toshiba
发明人： YAMAZAKI, Yuichiro , WATANABE, Kenji , SOBUKAWA, Hirosi , NOJI, Nobuharu , SATAKE, Tohru , YOSHIKAWA, Shoji , KARIMATA, Tsutomu , NAKASUJI, Mamoru , HATAKEYAMA, Masahiro , MURAKAMI, Takeshi , NAGAHAMA, Ichirota , NAGAI, Takamitsu , SUGIHARA, Kazuyoshi
IPC分类号： H01J37/244
CPC分类号： H01J37/28 , H01J37/224 , H01J37/244 , H01J2237/006 , H01J2237/20221 , H01J2237/2445 , H01J2237/2817
摘要： An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

10. 发明公开

EP4415020A2 INSULATING STRUCTURE, ELECTROSTATIC LENS, AND CHARGED PARTICLE BEAM DEVICE 审中-公开
公开(公告)号：EP4415020A2
公开(公告)日：2024-08-14
申请号：EP24156942.5
申请日：2024-02-09
申请人： EBARA CORPORATION
发明人： TOMA, Yasushi , KARIMATA, Tsutomu , AOTA, Sadashi , FUJISAWA, Shinsetsu
IPC分类号： H01J37/12
CPC分类号： H01J37/12 , H01J2237/020620130101 , H01J2237/03820130101
摘要： Provided is, inter alia, an insulating structure (300) used in a vacuum for a charged particle beam device, the insulating structure comprising:
- an anode (310); a cathode (320) facing the anode; and an insulator (330) disposed between the anode and the cathode, wherein
- the anode (310) has an anode flat surface (311) in contact with the insulator (330),
- the cathode (320) has:
- a first cathode flat surface (322) that is substantially parallel to the anode flat surface (311) and has a first distance from the anode flat surface (311);
- a second cathode flat surface (321) that is substantially parallel to the anode flat surface (311), and has a second distance from the anode flat surface (311), the second distance being smaller than the first distance; and
- a cathode connection surface (323) that connects the first cathode flat surface (322) and the second cathode flat surface (321), and
- the insulator (330) has:
- a first insulator flat surface (331) in contact with the anode flat surface (311);
- a second insulator flat surface (332) in contact with the first cathode flat surface (322) between the anode flat surface (311) and the first cathode flat surface (322);
- a third insulator flat surface (333) between the anode flat surface (311) and the second cathode flat surface (321), having a third distance from the anode flat surface (311), the third distance being smaller than the second distance, and not in contact with the second cathode flat surface (321);
- a first insulator connection surface (334) that connects the second insulator flat surface (332) and the third insulator flat surface (333) but is not in contact with the cathode (320); and a second insulator connection surface (335) located inside an outer peripheral end of the anode (310) and an outer peripheral end of the cathode (320) and connecting the first insulator flat surface (331) and the third insulator flat surface (333).

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