发明公开
EP1271605A1 ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING THE APPARATUS
审中-公开
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基本信息:
- 专利标题: ELECTRON BEAM APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE COMPRISING THE APPARATUS
- 专利标题(中):ELECTRON DEVICE AND METHOD FOR制造半导体器件的通过这样的设备来。
- 申请号:EP01980964.9 申请日:2001-11-02
- 公开(公告)号:EP1271605A1 公开(公告)日:2003-01-02
- 发明人: NAKASUJI, Mamoru , SATAKE, Tohru , WATANABE, Kenji , MURAKAMI, Takeshi , NOJI, Nobuharu , SOBUKAWA, Hirosi , KARIMATA, Tsutomu , YOSHIKAWA, Shoji , KIMBA, Toshifumi , OOWADA, Shin , SAITO, Mutsumi , HAMASHIMA, Muneki , TAKAGI, Toru , KIHARA, Naoto , NISHIMURA, Hiroshi
- 申请人: Ebara Corporation , Nikon Corporation
- 申请人地址: 11-1, Haneda Asahi-cho, Ohta-ku Tokyo 144-8510 JP
- 专利权人: Ebara Corporation,Nikon Corporation
- 当前专利权人: Ebara Corporation,Nikon Corporation
- 当前专利权人地址: 11-1, Haneda Asahi-cho, Ohta-ku Tokyo 144-8510 JP
- 代理机构: Wagner, Karl H., Dipl.-Ing.
- 优先权: JP2000336305 20001102; JP2000335833 20001102; JP2000337370 20001106; JP2000337491 20001106; JP2000350935 20001117; JP2000352720 20001120; JP2000353831 20001121; JP2000355294 20001122; JP2000362752 20001129; JP2000364556 20001130; JP2001005140 20010112; JP2001031901 20010208; JP2001031906 20010208; JP2001033599 20010209; JP2001106656 20010405; JP2001134981 20010502; JP2001158571 20010528
- 国际公布: WO02037526 20020510
- 主分类号: H01J37/29
- IPC分类号: H01J37/29 ; H01L21/027 ; H01L21/66
摘要:
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system. The electron beam apparatus comprises a multi-beam generator included in the primary electro-optical system for generating electrons emitted from an electron gun as a plurality of primary electron beams, a scanning deflector included in the primary electro-optical system for simultaneously scanning the plurality of primary electron beams on the sample, an objective lens included commonly in the primary electro-optical system and the secondary electro-optical system for decelerating the plurality of primary electron beams for irradiation to the sample, and for accelerating a plurality of secondary electron beams emitted from points of the sample irradiated with the primary electron beams, a secondary electron beam separator included in the primary electro-optical system and the secondary electro-optical system for deflecting the plurality of secondary electron beams passing through the objective lens from the primary electro-optical system to the secondary electro-optical system, at least one stage of magnification lens included in the secondary electro-optical system for enlarging the plurality of deflected secondary electron beams, and a plurality of detectors included in the detecting system and provided corresponding to the plurality of secondary electron beams from the secondary electro-optical system for detecting the secondary electron beams.