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1. 发明专利

JP2002226974A ELECTROLESS Ni-B PLATING SOLUTION, ELECTRONIC DEVICE, AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2002226974A
公开(公告)日：2002-08-14
申请号：JP2001034428
申请日：2001-02-09
申请人： EBARA CORP , EBARA UDYLITE KK , TOSHIBA CORP
发明人： INOUE HIROAKI , NAKAMURA KENJI , MATSUMOTO MORIHARU , EZAWA HIROKAZU , MIYATA MASAHIRO , TSUJIMURA MANABU
IPC分类号： C23C18/16 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To reduce the contents of boron in a plating film without increasing a deposition rate and to deposit an Ni-B alloy film of a fcc crystal structure. SOLUTION: The plating solution is used for depositing the Ni-B alloy film by electroless plating at least on a part of the wiring of electronic device equipment having buried wiring structure and contains a nickel ion, a complexing agent for the nickel ion, alkylamine borane or borohydride compound as a reducing agent for the nickel ion, and an ammonia ion (NH4+).

2. 发明专利

JP2001342573A METHOD AND APPARATUS FOR ELECTROLESS PLATING 失效
公开(公告)号：JP2001342573A
公开(公告)日：2001-12-14
申请号：JP2000165801
申请日：2000-06-02
申请人： EBARA CORP , TOSHIBA CORP
发明人： INOUE HIROAKI , NAKAMURA KENJI , MATSUMOTO MORIHARU , MISHIMA KOJI , MATSUDA TETSURO , KANEKO HISAFUMI
IPC分类号： C23C18/16 , C23C18/31 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for an electroless plating which reduces an amount of a plating solution used, stabilizes the plating process, downsizes the apparatus, reduces the cost, and gives a uniform film thickness. SOLUTION: The method for the electroless plating on a surface to be plated comprises, holding a semiconductor substrate W with a surface to be plated upward on a substrate holding part 11, supplying the electroless plating solution into a weir member 31 which is provided in surroundings of the semiconductor substrate W, from a shower head 41 and storing it, and holding the substrate in a resting state during plating for a predetermined time.

3. 发明专利

JP2004197169A Method for forming copper electric wiring on substrate 有权
公开(公告)号：JP2004197169A
公开(公告)日：2004-07-15
申请号：JP2002367469
申请日：2002-12-19
申请人： Ebara Corp , Ebara Udylite Kk , Hidemi Nawafune , 株式会社荏原製作所 , 秀美縄舟 , 荏原ユージライト株式会社
发明人： FUKUNAGA AKIRA , ONO KANJI , KIMIZUKA RYOICHI , MATSUMOTO MORIHARU , NAWAFUNE HIDEMI
IPC分类号： C23C18/16 , C23C18/31 , C23C18/40 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a technology for forming a fine circuit wiring having a superior embedding property of copper and a high electrical reliability on a substrate provided with a fine circuit pattern for an electronic circuit such as a silicon wafer, without producing defects such as a seam void in a channel, by electroless copper plating.
SOLUTION: A method for forming the copper electric wiring on the substrate having the fine circuit pattern and a metal seed layer formed thereon for the electronic circuit, comprises immersing the substrate in a treatment liquid containing a polymer component, and subjecting it to electroless copper plating.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2002129344A APPARATUS FOR ELECTROLESS PLATING 失效
公开(公告)号：JP2002129344A
公开(公告)日：2002-05-09
申请号：JP2000327798
申请日：2000-10-26
申请人： EBARA CORP
发明人： INOUE HIROAKI , MISHIMA KOJI , KARIMATA TSUTOMU , NAKAMURA KENJI , MATSUMOTO MORIHARU
IPC分类号： C23C18/16 , H01L21/288 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for electroless plating, which reduces the usage of plating solution, maintains a plating process stably, miniaturizes the apparatus, reduces cost, and uniforms film thickness within the surface. SOLUTION: This apparatus comprises a holding means 11 for holding a semiconductor substrate W with an upward-facing surface to be plated, a sheathing member 31 for sealing surroundings of the surface to be plated of the semiconductor substrate W held by the holding means 11, a showerhead 41 for supplying and storing an electroless plating solution on the surface to be plated of the semiconductor substrate W sealed with the sheathing member 31, and a rear-face heater 15 (15-1, 15-2) arranged below the semiconductor substrate W. A space (an area 17 for uniforming temperature) for filling gas therein is provided between the rear face heater 15 and the semiconductor substrate W.

5. 发明专利

JP2003124214A METHOD AND UNIT FOR FORMING WIRING 审中-公开
公开(公告)号：JP2003124214A
公开(公告)日：2003-04-25
申请号：JP2001317217
申请日：2001-10-15
申请人： EBARA CORP , EBARA UDYLITE KK
发明人： INOUE HIROAKI , OKUYAMA SHUICHI , KANAYAMA MAKOTO , MATSUMOTO MORIHARU
IPC分类号： C25D5/18 , C25D7/12 , C25D17/00 , H01L21/288 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To form void-free sound wiring by reinforcing a seed layer surely even in the case of microwiring of high aspect ratio. SOLUTION: A seed layer 6 is formed on the surface of a substrate where microtrenches 4 for wiring are formed and then reinforced by electroless plating. Subsequently, it is further reinforced by electroplating and a conductor is buried in the microtrench 4 by electroplating.

6. 发明专利

JP2003034876A Catalytic treatment liquid and method for electroless plating 审中-公开
标题翻译：催化处理液和电镀法的方法
公开(公告)号：JP2003034876A
公开(公告)日：2003-02-07
申请号：JP2002137137
申请日：2002-05-13
申请人： Ebara Corp , Ebara Udylite Kk , 株式会社荏原製作所 , 荏原ユージライト株式会社
发明人： INOUE HIROAKI , NAKAMURA KENJI , MATSUMOTO MORIHARU
IPC分类号： C23C18/18 , C23C18/31 , H01L21/02 , H01L21/28 , H01L21/288 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a catalytic treatment liquid, which is used for protecting the surface of copper wiring with a protective coating of an alloy containing phosphorus, without causing void inside the copper wiring, and to provide an electroless plating method.
SOLUTION: This catalytic treatment liquid includes at least one complex compound of noble metals of a group IB or a group VIII in the periodic table, and being used for pretreatment prior to the electroless plating on electronic devices having a copper buried wiring structure.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种催化处理液，其用于利用含磷合金的保护涂层来保护铜布的表面，而不会在铜布线内引起空隙，并提供无电解镀法。解决方案：该催化处理液体包括至少一种元素周期表中IB族或VIII族贵金属络合物，并用于在具有铜掩埋布线结构的电子器件上进行无电镀前的预处理。

7. 发明专利

JP2002367998A Semiconductor device and manufacturing method therefor 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2002367998A
公开(公告)日：2002-12-20
申请号：JP2001176176
申请日：2001-06-11
申请人： Ebara Corp , 株式会社荏原製作所
发明人： INOUE HIROAKI , NAKAMURA KENJI , MATSUMOTO MORIHARU
IPC分类号： C23C18/16 , C23C18/52 , H01L21/00 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： H01L21/67161 , C23C18/1632 , C23C18/1651 , C23C18/1678 , C23C18/34 , C23C18/50 , H01L21/288 , H01L21/6715 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/67219 , H01L21/6723 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To make it possible to prevent both oxidation of wiring and thermal dispersion effectively by covering selectively only the surface of a buried wiring.
SOLUTION: A protective film 20 includes an anti-oxidation layer made of Ni or Ni alloy layer for preventing oxidation of the wiring 8, and a thermal dispersion preventive layer 10 made of Co or Co alloy for preventing the thermal dispersion of the wiring 8. The film 20 is formed on the surface of an exposed wiring in the semiconductor device with a buried wiring structure.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过仅选择性地覆盖埋地布线的表面，可以有效地防止布线的氧化和热分散。解决方案：保护膜20包括由用于防止布线8氧化的Ni或Ni合金层制成的抗氧化层，以及由Co或Co合金制成的用于防止布线8的热分散的防散热层10。薄膜20形成在具有埋入布线结构的半导体器件中的暴露布线的表面上。

8. 发明专利

JP2002203859A WIRING FORMING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2002203859A
公开(公告)日：2002-07-19
申请号：JP2001337852
申请日：2001-11-02
申请人： EBARA CORP
发明人： INOUE HIROAKI , MISHIMA KOJI , KATO TAKAO , NAKAMURA KENJI , MATSUMOTO MORIHARU
IPC分类号： C25D7/12 , H01L21/288 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To form embedded wiring consisting of conductive material having integrity without any defect in a recess even when the recess part with a high aspect ratio exists. SOLUTION: When a conductive metal 20 is embedded by wet plating on a fine recess part 14 provided on the surface of a board W to form the wiring, a substrate film 18 constituted of two kinds of metals is formed on the surface of the board, and the wet plating is performed on the surface of the substrate film 18.

9. 发明专利

JP2006032984A Wiring-forming method 有权
标题翻译：接线方法
公开(公告)号：JP2006032984A
公开(公告)日：2006-02-02
申请号：JP2005272776
申请日：2005-09-20
申请人： Ebara Corp , Ebara Udylite Kk , 株式会社荏原製作所 , 荏原ユージライト株式会社
发明人： INOUE HIROAKI , OKUYAMA SHUICHI , KANAYAMA MAKOTO , MATSUMOTO MORIHARU
IPC分类号： H01L21/288 , C23C18/16 , C25D5/10 , C25D5/18 , C25D7/12
摘要： PROBLEM TO BE SOLVED: To enable formation of sound wiring without voids by surely reinforcing a seed layer, even if fine wiring has high asbestos ratio.
SOLUTION: The seed layer is formed in a surface of a substrate, in which a fine hollow for wiring is formed. The seed layer is reinforced by electroless plating with a first plating solution. Thereafter, the seed layer is further reinforced by electrolysis plating, using pulses or PR pulses with a second plating solution. A conductor is embedded in the fine hollow by electrolytic plating by using third plating solution.
COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2005248328A Substrate treatment apparatus 有权
标题翻译：基板处理设备
公开(公告)号：JP2005248328A
公开(公告)日：2005-09-15
申请号：JP2005066317
申请日：2005-03-09
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MISHIMA KOJI , INOUE HIROAKI , MAKINO NATSUKI , NAKAMURA KENJI , MATSUMOTO MORIHARU
IPC分类号： C23C18/31 , C25D5/06 , C25D7/12 , C25D17/00 , C25D19/00
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus which can be made compact and low-cost, and in which shift from one substrate treatment process to next substrate treatment process is smoothly performed in a short period of time and a stable substrate treatment process can be obtained.
SOLUTION: The substrate treatment apparatus includes: a substrate holding means 36 (a substrate treatment section 20) which holds the substrate W; and substrate treatment heads 30 (first and second anode heads 30-1, and 2) which are movable between the surface to be treated of the substrate W and a retreating section 22 and is equipped with a substrate treating liquid supplying mechanism. A plurality of the substrate treatment apparatus (plating units) 12 which perform the substrate treatment by transferring the substrate treatment heads 30 onto the the substrates W held on the substrate holding means 36 are installed within a single apparatus.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以制造得紧凑且低成本的基板处理装置，并且其中从一个基板处理工艺到下一个基板处理工艺的转变在短时间内平稳地进行并且稳定可以获得基板处理工艺。解决方案：基板处理装置包括：保持基板W的基板保持装置36（基板处理部20）以及能够在基板W的待处理表面和退避部22之间移动的基板处理头30（第一和第二阳极头30-1,2），并且配备有基板处理液供给机构。通过将基板处理头30转印到保持在基板保持装置36上的基板W上进行基板处理的多个基板处理装置（电镀单元）12安装在单个装置内。版权所有（C）2005，JPO＆NCIPI

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