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    • 2. 发明专利
    • Polishing device and polishing method
    • 抛光装置和抛光方法
    • JP2014124731A
    • 2014-07-07
    • JP2012284232
    • 2012-12-27
    • Ebara Corp株式会社荏原製作所
    • NAKANISHI MASAYUKIKODERA KENJIYANAKA NOBUHIRO
    • B24B55/02B24B9/00H01L21/304
    • H01L21/304B24B9/065B24B9/08B24B37/02B24B57/02H01L21/02057H01L21/02087
    • PROBLEM TO BE SOLVED: To provide a polishing device and polishing method capable of preventing particles on a rear surface of a substrate from moving to a front surface of the substrate.SOLUTION: A polishing device 100 comprises a holding stage 4 for holding a central part of a rear surface of a substrate W, a motor M1 for rotating the holding stage 4, a front surface nozzle 36 for supplying a rinse liquid to a front surface of the substrate W in a state that the holding stage 4 is rotated by the motor M1, a rear surface nozzle 37 for supplying the rinse liquid to the rear surface of the substrate W in a state that the holding stage 4 is rotated, a rinse liquid control unit 110 for supplying the rinse liquid from the rear surface nozzle 37 when a predetermined time is elapsed after the rinse liquid is supplied from the front surface nozzle 36, and a polishing head assembly 1A for polishing a peripheral part of the substrate W disposed on the holding stage 4 after the rinse liquid is supplied to the substrate W by the rinse liquid control unit 110.
    • 要解决的问题:提供一种能够防止基板的后表面上的颗粒移动到基板的前表面的抛光装置和抛光方法。抛光装置100包括:保持台4,用于保持基板的中心部分 基板W的后表面,用于旋转保持台4的电动机M1,用于在保持台4由电动机旋转的状态下将冲洗液供给到基板W的前表面的前表面喷嘴36 M1,用于在保持台4旋转的状态下将冲洗液体供给到基板W的后表面的后表面喷嘴37,当用于从后表面喷嘴37提供冲洗液体的冲洗液体控制单元110 在从前表面喷嘴36供给冲洗液之后经过预定时间,以及在冲洗液为su后,在配置在保持台4上的基板W的周边部分进行研磨的研磨头组件1A 通过冲洗液体控制单元110浸入基材W。
    • 3. 发明专利
    • Bevel shape of wafer managing method
    • WAFER管理方法的水平形状
    • JP2010141218A
    • 2010-06-24
    • JP2008317821
    • 2008-12-15
    • Ebara Corp株式会社荏原製作所
    • NAKANISHI MASAYUKIKODERA KENJI
    • H01L21/304B24B9/00B24B21/00
    • PROBLEM TO BE SOLVED: To provide a method for controlling the shape of a bevel portion of a wafer, minimizing deformation of a retainer ring during a CMP step. SOLUTION: In the method for controlling the shape of a bevel portion, the bevel portion of a wafer W is polished to form a flat end face B1 before polishing the wafer W using a CMP device. Deformation of a retainer ring of the CMP device by the wafer W is prevented thereby. Here, a width D of the end face B1 is preferred to be within 200-500 μm. As a means for forming the end face B1, a bevel polishing device which uses a polishing tape or the like is employed. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种用于控制晶片的斜面部分的形状的方法,使CMP步骤期间保持环的变形最小化。 解决方案:在用于控制斜面部分形状的方法中,使用CMP装置对晶片W进行研磨之前,抛光晶片W的斜面部分以形成平坦端面B1。 因此防止了由晶片W造成的CMP装置的保持环的变形。 这里,端面B1的宽度D优选在200〜500μm之间。 作为形成端面B1的手段,采用使用研磨带等的斜面研磨装置。 版权所有(C)2010,JPO&INPIT
    • 5. 发明专利
    • Polishing device and method
    • 抛光装置和方法
    • JP2010162624A
    • 2010-07-29
    • JP2009005102
    • 2009-01-13
    • Ebara Corp株式会社荏原製作所
    • NAKANISHI MASAYUKIITO KENYATAKAHASHI YOSHIMIZUMIYAMOTO KUMIKOKODERA KENJI
    • B24B9/00B24B21/00H01L21/304
    • B24B9/065B24B21/004
    • PROBLEM TO BE SOLVED: To provide polishing device and method allowing realizing of a polishing process capable of forming a smooth polished surface at a low cost. SOLUTION: This polishing device includes a substrate holding part 3 for rotating a substrate W with the axial center as a center, first polishing parts 1B and 1D for polishing a peripheral edge part of the rotated substrate W by bringing the peripheral edge part into contact with a polishing layer of a first polishing tool 23A, and second polishing parts 1A and 1C for polishing the peripheral edge part by bringing the peripheral part into contact with a polishing layer of a second polishing tool 23B. The polishing layer of the first polishing tool 23A has hard first abrasive grain, while the polishing layer of the second polishing tool 23B has second abrasive grain softer than the first abrasive grain. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供能够以低成本实现能够形成平滑抛光表面的抛光工艺的抛光装置和方法。 解决方案:该抛光装置包括:以轴心为中心旋转基板W的基板保持部3;第一研磨部1B,1D,其通过使旋转基板W的周缘部的周缘部 与第一研磨工具23A的研磨层接触,以及第二研磨部1A,1C,其通过使周缘部与第二研磨工具23B的研磨层接触来研磨周缘部。 第一研磨工具23A的研磨层具有硬质的第一磨粒,而第二研磨工具23B的研磨层具有比第一磨粒更软的第二磨粒。 版权所有(C)2010,JPO&INPIT