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    • 9. 发明公开
    • PROCESS FOR FORMING THIN FILM ENCAPSULATION LAYERS
    • 形成薄膜封装层的工艺
    • EP2193219A2
    • 2010-06-09
    • EP08832964.4
    • 2008-09-17
    • Eastman Kodak Company
    • FEDOROVSKAYA, Elena A.BOROSON, Michael LouisLEVY, David HowardAGOSTINELLI, John Alphonse
    • C23C16/40C23C16/455H01L51/52
    • B05D5/00C23C16/403C23C16/405C23C16/45551C23C16/45574H01L51/5253
    • A process is disclosed for making a thin film encapsulation package for an OLED device by depositing a thin film material on an OLED device to be encapsulated, comprising simultaneously directing a series of gas flows along substantially parallel elongated output openings, wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material to form an encapsulating thin film, wherein the first reactive gaseous material is a volatile organo-metal precursor compound. The process is carried out substantially at or above atmospheric pressure, and the temperature of the substrate during deposition is under 250°C.
    • 公开了一种用于通过在要被封装的OLED器件上沉积薄膜材料来制造用于OLED器件的薄膜封装封装的方法,该方法包括同时沿着基本上平行的细长输出开口引导一系列气流,其中所述一系列气流 依次包括至少第一反应性气态材料,惰性吹扫气体和第二反应性气态材料,可选地重复多次,其中第一反应性气态材料能够与用第二反应性气体材料处理的基板表面反应 以形成包封薄膜,其中所述第一反应性气态材料是挥发性有机金属前体化合物。 该过程基本上在大气压或高于大气压下进行,沉积过程中基材的温度低于250℃。