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    • 10. 发明申请
    • PROCESS FOR ATOMIC LAYER DEPOSITION
    • 原子层沉积过程
    • WO2007126585A3
    • 2008-04-24
    • PCT/US2007006415
    • 2007-03-14
    • EASTMAN KODAK COLEVY DAVID HOWARD
    • LEVY DAVID HOWARD
    • C23C16/455
    • C23C16/545B33Y80/00C23C16/403C23C16/407C23C16/45504C23C16/45519C23C16/45551C23C16/45591
    • The present invention relates to a deposition process for thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first and second gaseous materials are reactive with each other such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials. The process comprises flowing the gaseous materials along the length direction of a plurality of elongated channels across the surface of the substrate surface in close proximity thereto.
    • 本发明涉及一种用于薄膜沉积到衬底上的沉积工艺,包括提供至少包括第一,第二和第三气态材料的多种气态材料,其中第一和第二气态材料彼此反应,使得当一个 第一或第二气体材料的第一或第二气体材料在基材的表面上,另一个第一或第二气态材料将反应以在基材上沉积一层材料,并且其中第三气态材料相对于与第一或第二气态材料反应 第二种气态物质。 该方法包括使气态材料沿多个细长通道的长度方向流过基板表面的紧邻其表面。